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31. 发明授权

US08871409B2 Lithographic targets for uniformity control 有权
标题翻译：用于均匀性控制的平版印刷目标
公开(公告)号：US08871409B2
公开(公告)日：2014-10-28
申请号：US13810974
申请日：2011-07-25
申请人： Rainer Pforr , Guy Ben-Zvi , Vladimir Dmitriev , Erez Graitzer
发明人： Rainer Pforr , Guy Ben-Zvi , Vladimir Dmitriev , Erez Graitzer
IPC分类号： G03F1/00 , G03C5/00 , G03F7/00 , H01L21/66 , H01L21/68 , G03F1/38 , G03F1/44 , G03F7/20 , G06F17/50
CPC分类号： H01L22/12 , G03F1/38 , G03F1/44 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G06F17/50 , H01L21/68 , H01L21/681 , H01L21/682 , H01L22/20
摘要： A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.
摘要翻译：提供了具有第一组图案和第二组图案的光掩模，其中第一组图案对应于要在晶片上制造的电路图案，并且第二组图案具有尺寸，使得第二组图案图案不利于在第一曝光条件下使用基于第一组图案的光刻工艺产生的电路图案。基于在第一曝光条件下基于第一组图案的使用光刻处理产生的电路图案的第二组图案来确定光掩模的临界尺寸分布。

32. 发明申请

US20140236516A1 METHOD AND APPARATUS FOR DETERMINING A CRITICAL DIMENSION VARIATION OF A PHOTOLITHOGRAPHIC MASK 审中-公开
标题翻译：用于确定光刻胶掩模的关键尺寸变化的方法和装置
公开(公告)号：US20140236516A1
公开(公告)日：2014-08-21
申请号：US14232097
申请日：2012-07-20
申请人： Rainer Pforr
发明人： Rainer Pforr
IPC分类号： H01L21/66
CPC分类号： H01L22/24 , G03F1/84 , G03F7/70625
摘要： The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic mask, each sub-area comprising a group of features, (b) measuring a distribution of a transmission of each sub-area, (c) determining a deviation of the transmission from a mean transmission value for each sub-area, (d) determining a constant specific for each sub-area, and (e) determining the critical dimension variation of the photolithographic mask by combining for each sub-area the deviation of the transmission and the sub-area specific constant.
摘要翻译：本发明涉及一种用于确定光刻掩模的临界尺寸变化的方法，其包括：（a）使用光刻掩模的布局数据来确定光刻掩模的至少两个子区域，每个子区域包括一组特征（b）测量每个子区域的传输分布，（c）确定所述传输的偏差与每个子区域的平均传输值，（d）确定每个子区域的常数，以及（e）通过对每个子区域组合透射的偏差和子区域特定常数来确定光刻掩模的临界尺寸变化。

33. 发明申请

US20130295698A1 LITHOGRAPHIC TARGETS FOR UNIFORMITY CONTROL 有权
标题翻译：用于均匀控制的平台目标
公开(公告)号：US20130295698A1
公开(公告)日：2013-11-07
申请号：US13810974
申请日：2011-07-25
申请人： Rainer Pforr , Guy Ben-Zvi , Vladimir Dmitriev , Erez Graitzer
发明人： Rainer Pforr , Guy Ben-Zvi , Vladimir Dmitriev , Erez Graitzer
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： H01L22/12 , G03F1/38 , G03F1/44 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G06F17/50 , H01L21/68 , H01L21/681 , H01L21/682 , H01L22/20
摘要： A photo mask having a first set of patterns and a second set of patterns is provided in which the first set of patterns correspond to a circuit pattern to be fabricated on a wafer, and the second set of patterns have dimensions such that the second set of patterns do not contribute to the circuit pattern that is produced using a lithography process based on the first set of patterns under a first exposure condition. The critical dimension distribution of the photo mask is determined based on the second set of patterns that do not contribute to the circuit pattern produced using the lithography process based on the first set of patterns under the first exposure condition.
摘要翻译：提供了具有第一组图案和第二组图案的光掩模，其中第一组图案对应于要在晶片上制造的电路图案，并且第二组图案具有尺寸，使得第二组图案图案不利于在第一曝光条件下使用基于第一组图案的光刻工艺产生的电路图案。基于在第一曝光条件下基于第一组图案的使用光刻处理产生的电路图案的第二组图案来确定光掩模的临界尺寸分布。

34. 发明授权

US08539394B2 Method and apparatus for minimizing overlay errors in lithography 有权
标题翻译：用于最小化平版印刷中重叠误差的方法和装置
公开(公告)号：US08539394B2
公开(公告)日：2013-09-17
申请号：US13408695
申请日：2012-02-29
申请人： Rainer Pforr
发明人： Rainer Pforr
IPC分类号： G06F17/50
CPC分类号： G03F7/70633 , G03F1/70
摘要： A method for minimizing errors of a plurality of photolithographic masks that serve for successively processing a substrate is provided. The method includes determining a reference displacement vector field, in which the reference displacement vector field correlates displacement vectors of the errors of the plurality of photolithographic masks. The method includes determining for each of the photolithographic mask a difference displacement vector field as a difference between the reference displacement vector field and the displacement vectors of the errors of the respective photolithographic mask, and correcting the errors for each of the photolithographic masks using the respective difference displacement vector field.
摘要翻译：提供了用于使用于连续处理衬底的多个光刻掩模的误差最小化的方法。该方法包括确定参考位移矢量场，其中参考位移矢量场将多个光刻掩模的误差的位移矢量相关联。该方法包括将每个光刻掩模的差异位移矢量场确定为参考位移矢量场和相应光刻掩模的误差的位移矢量之间的差，并且使用相应的光刻掩模来校正每个光刻掩模的误差差异位移矢量场。

35. 发明申请

US20080318153A1 PHOTOSENSITIVE LAYER STACK 审中-公开
标题翻译：感光层堆叠
公开(公告)号：US20080318153A1
公开(公告)日：2008-12-25
申请号：US11765342
申请日：2007-06-19
申请人： Rainer Pforr
发明人： Rainer Pforr
IPC分类号： G03F7/004 , G03F7/20 , G03B27/42
CPC分类号： G03F7/2022 , G03F7/11
摘要： A photosensitive layer stack and methods for multiple exposure lithography are disclosed having a bleachable layer with a first absorption switching from absorptive to transmissive upon irradiation and a photochromic layer having a second absorption switching from transmissive to absorptive upon irradiation.
摘要翻译：公开了一种感光层堆叠和用于多次曝光光刻的方法，其具有可照射层，其具有从照射时的吸收到透射的第一吸收切换，以及在照射时具有从透射到吸收的第二吸收切换的光致变色层。

36. 发明授权

US07393614B2 Set of masks including a first mask and a second trimming mask with a semitransparent region having a transparency between 20% and 80% to control diffraction effects and obtain maximum depth of focus for the projection of structure patterns onto a semiconductor wafer 失效
$Set of masks including a first mask and a second trimming mask with a semitransparent region having a transparency between 20% and 80% to control diffraction effects and obtain maximum depth of focus for the projection of structure patterns onto a semiconductor wafer$
标题翻译：包括具有第一掩模和第二修整掩模的掩模，其具有透明度在20％至80％之间的半透明区域以控制衍射效应并获得用于将结构图案投影到半导体晶片上的最大焦深
公开(公告)号：US07393614B2
公开(公告)日：2008-07-01
申请号：US10792693
申请日：2004-03-05
申请人： Roderick Köhle , Rainer Pforr , Jörg Thiele , Wolfgang Dettmann , Markus Hofsäss , Mario Hennig
发明人： Roderick Köhle , Rainer Pforr , Jörg Thiele , Wolfgang Dettmann , Markus Hofsäss , Mario Hennig
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F7/70466 , G03F1/30 , G03F1/34 , G03F1/70
摘要： A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.
摘要翻译：一组至少两个掩模，用于通过投影系统将相互配合的结构图案投影到半导体晶片的相同感光层中，其中该组至少两个掩模包括具有不透明结构元件的主掩模，其形成在第一掩模上的第一位置。该集合的第二掩码（例如，被分配给第一掩码的修剪掩模）可以具有分配给第一掩码的结构元素的半透明区域。半透明区域可以形成在第二掩模上与第一掩模上的不透明结构元件相同的位置处。借助于半透明区域的透明度的适当选择，有可能在半导体晶片上的感光层曝光期间使不期望的抗蚀剂区域被修剪以放大处理窗口。

37. 发明申请

US20070287075A1 Mask arrangement, optical projection system and method for obtaining grating parameters and absorption properties of a diffractive optical element 审中-公开
$Mask arrangement, optical projection system and method for obtaining grating parameters and absorption properties of a diffractive optical element$
标题翻译：掩模布置，光学投影系统以及用于获得衍射光学元件的光栅参数和吸收特性的方法
公开(公告)号：US20070287075A1
公开(公告)日：2007-12-13
申请号：US11451618
申请日：2006-06-13
申请人： Rainer Pforr , Jens Reichelt , Mario Hennig , Thomas Mulders , Karsten Zeiler
发明人： Rainer Pforr , Jens Reichelt , Mario Hennig , Thomas Mulders , Karsten Zeiler
IPC分类号： G03B27/42 , G03F1/00
CPC分类号： G03F7/70433 , G03F1/62 , G03F7/70091 , G03F7/7015 , G03F7/70158
摘要： A mask arrangement or an optical projection system includes a diffractive optical element. The diffractive optical element includes grid sections having gratings with defined grating parameters and absorbing elements with defined absorption properties, wherein each grid section corresponds to a respective mask section with mask pattern elements. The diffractive optical element may correct dimension deviations of resist pattern elements obtained from the respective mask pattern elements, wherein the deviations are caused by dimension deviations of the mask pattern elements or by local deviations and defects of the projection system.
摘要翻译：掩模布置或光学投影系统包括衍射光学元件。衍射光学元件包括具有限定的光栅参数的光栅和具有限定的吸收特性的吸收元件的栅格部分，其中每个栅格部分对应于具有掩模图案元件的相应掩模部分。衍射光学元件可以校正从各个掩模图案元件获得的抗蚀剂图案元件的尺寸偏差，其中偏差是由掩模图案元件的尺寸偏差或投影系统的局部偏差和缺陷引起的。

38. 发明申请

US20070196744A1 METHOD FOR PRODUCING A MASK FOR THE LITHOGRAPHIC PROJECTION OF A PATTERN ONTO A SUBSTRATE 失效
标题翻译：用于生成用于将图案投影到基板上的掩模的掩模的方法
公开(公告)号：US20070196744A1
公开(公告)日：2007-08-23
申请号：US11668565
申请日：2007-01-30
申请人： Mario Hennig , Rainer Pforr , Gerd Unger
发明人： Mario Hennig , Rainer Pforr , Gerd Unger
IPC分类号： G06F17/50 , G06K9/00 , G03F1/00 , G03C5/00
CPC分类号： G03F7/70191 , G03F1/00
摘要： A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.
摘要翻译：布局被分解为部分图案。为每个部分图案绘制中间掩模。中间掩模在掩模步进器或扫描仪中逐渐用于投影到测试掩模上的共同图案中。从测试掩模或使用掩模曝光的测试晶片确定线宽度分布LB（x，y），并将其转换成剂量校正的分布。基于所计算的剂量校正来适应各个中间掩模的传输T（x，y）。这可以使用分配给中间掩模并具有阴影结构元件的附加光学元件，或者通过激光引起的中间掩模本身的石英衬底中的遮光元件的后侧引入来实现。

39. 发明申请

US20050095512A1 Lithography mask for imaging of convex structures 失效
标题翻译：用于凸结构成像的平版印刷掩模
公开(公告)号：US20050095512A1
公开(公告)日：2005-05-05
申请号：US10928759
申请日：2004-08-27
申请人： Molela Moukara , Burkhard Ludwig , Jorg Thiele , Marco Ahrens , Roderick Kohle , Rainer Pforr , Nicolo Morgana
发明人： Molela Moukara , Burkhard Ludwig , Jorg Thiele , Marco Ahrens , Roderick Kohle , Rainer Pforr , Nicolo Morgana
IPC分类号： G03C5/00 , G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70441 , G03F1/30 , G03F1/36 , G03F7/70466
摘要： A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (α). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (α). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.
摘要翻译：光刻掩模具有由第一不透明部分（O 1）和第二不透明部分（O 2）形成的成角度的结构元件（O）。结构元件具有至少一个反射角（α）。倾斜结构元件（O）包括面向反射角（α）的至少一个凸部（A）。与成角度的结构元件（O）相邻的至少一个透明结构（T）设置在倾斜结构元件（O）的凸部（A）处。透明结构（T）以分开的方式形成在成角度的结构元件（O）的凸部（A）处，因此包括两个可区分的透明段（T 1，T 2），其至少形成在主要轴向对称的部分到角度平分线（WH）的反射角度。

40. 发明授权

US06627392B2 Method of transferring a pattern of high structure density by multiple exposure of less dense partial patterns 有权
公开(公告)号：US06627392B2
公开(公告)日：2003-09-30
申请号：US10073846
申请日：2002-02-11
申请人： Rainer Pforr , Fritz Gans
发明人： Rainer Pforr , Fritz Gans
IPC分类号： G03F720
CPC分类号： G03F1/29 , G03F1/70 , G03F7/70466
摘要： A pattern with small, densely packed structures is transferred from a structure carrier to an object. At least two partial patterns of less densely packed structure contents are produced from the densely packed structures in that those structures which are arranged close beside one another in the pattern on the structure carrier are assigned to various partial patterns if possible and separated from one another as a result. The partial patterns are then transferred to the object with a time offset and the structures are combined again as a result. This achieves a reduction in the structure density during the optical imaging process, so that the influence of disruptive structure interference on the imaging is reduced and thus denser structures can be imaged at the same wavelength.

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