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31. 发明授权

US07923790B1 Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
标题翻译：用于真空封装装置的平面微壳和大马士革制造方法
公开(公告)号：US07923790B1
公开(公告)日：2011-04-12
申请号：US11716070
申请日：2007-03-09
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L29/84
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.
摘要翻译：用于MEMS和微电子等器件封装的低温多层平面微型壳体。微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

32. 发明授权

US07876167B1 Hybrid system having a non-MEMS device and a MEMS device 有权
标题翻译：具有非MEMS器件和MEMS器件的混合系统
公开(公告)号：US07876167B1
公开(公告)日：2011-01-25
申请号：US12028503
申请日：2008-02-08
申请人： Andrew D. McCraith , Richard S. Miller , Emmanuel P. Quevy
发明人： Andrew D. McCraith , Richard S. Miller , Emmanuel P. Quevy
IPC分类号： H03B5/32 , H03B5/40
CPC分类号： H03H9/1057 , H03H9/2426
摘要： A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.
摘要翻译：描述了具有非MEMS器件和MEMS器件的混合系统。该装置包括非MEMS器件和包括MEMS器件的集成电路，该集成电路形成在衬底上。集成电路包括用于非MEMS器件的控制电路和用于MEMS器件的MEMS控制电路。

33. 发明授权

US07858422B1 MEMS coupler and method to form the same 有权
标题翻译： MEMS耦合器和方法形成相同
公开(公告)号：US07858422B1
公开(公告)日：2010-12-28
申请号：US11716227
申请日：2007-03-09
申请人： Emmanuel P. Quevy , Roger T. Howe
发明人： Emmanuel P. Quevy , Roger T. Howe
IPC分类号： H01L21/00
CPC分类号： B81C1/00039 , B81B2201/0271
摘要： A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.
摘要翻译：描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。在一个实施例中，MEMS结构包括构件和衬底。耦合器延伸穿过构件的一部分并将构件与衬底连接。该构件由第一材料构成，并且该耦合器由第二材料构成。在一个实施例中，第一和第二材料基本相同。在一个实施例中，第二材料是导电的并且不同于第一材料。在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

34. 发明授权

US08878528B2 MEMS-based magnetic sensor with a Lorentz force actuator used as force feedback 有权
标题翻译：具有洛仑兹力致动器的基于MEMS的磁传感器用作力反馈
公开(公告)号：US08878528B2
公开(公告)日：2014-11-04
申请号：US13174417
申请日：2011-06-30
申请人： Emmanuel P. Quevy
发明人： Emmanuel P. Quevy
IPC分类号： G01R33/02 , G01R33/028
CPC分类号： G01R33/0286
摘要： A magnetic sensor utilizes a MEMS device that has at least one vibrating member and at least one conductive path integral with the vibrating member so that a current flows along the vibrating member and in the presence of a magnetic field interaction of the magnetic field and the point charges in the current on the conductive path due to the Lorentz force causes a change in vibration of the vibrating member. That change can be used to provide a measure of the magnetic field.
摘要翻译：磁传感器利用具有至少一个振动构件和至少一个与振动构件成一体的导电路径的MEMS装置，使得电流沿着振动构件流动，并且在存在磁场和点的磁场相互作用的情况下由于洛伦兹力导致的导电路径上的电流的电荷导致振动部件的振动的变化。该变化可用于提供磁场的测量。

35. 发明授权

US08877536B1 Technique for forming a MEMS device using island structures 有权
标题翻译：使用岛结构形成MEMS器件的技术
公开(公告)号：US08877536B1
公开(公告)日：2014-11-04
申请号：US13075806
申请日：2011-03-30
申请人： Emmanuel P. Quevy , Carrie W. Low
发明人： Emmanuel P. Quevy , Carrie W. Low
IPC分类号： H01L21/00
CPC分类号： B81B3/0072
摘要： A method of manufacturing an integrated circuit including a MEMS device includes forming a structural layer above a substrate including at least one semiconductor device. The method includes forming an attachment to a first portion of the structural layer, the attachment having a thickness substantially greater than a thickness of the structural layer. In at least one embodiment of the method, the attachment is conjoined with the first portion of the structural layer and the first portion of the structural layer and the attachment are operative to mechanically move in unison. In at least one embodiment of the method, forming the attachment includes forming a patterned filler layer of a first material above the structural layer and forming a patterned conformal layer of a second material on the patterned filler layer. The filler layer has a thickness substantially greater than the thickness of the structural layer.
摘要翻译：制造包括MEMS器件的集成电路的方法包括在包括至少一个半导体器件的衬底上形成结构层。该方法包括形成与结构层的第一部分的附件，附件具有基本上大于结构层厚度的厚度。在该方法的至少一个实施例中，附件与结构层的第一部分结合，并且结构层的第一部分和附件可操作以一致地机械移动。在该方法的至少一个实施例中，形成附件包括在结构层上方形成第一材料的图案填充层，并在图案化的填料层上形成第二材料的图案化保形层。填料层的厚度基本上大于结构层的厚度。

36. 发明授权

US08852984B1 Technique for forming a MEMS device 有权
标题翻译：用于形成MEMS器件的技术
公开(公告)号：US08852984B1
公开(公告)日：2014-10-07
申请号：US13075800
申请日：2011-03-30
申请人： Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
发明人： Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
IPC分类号： H01L21/20
CPC分类号： B81B3/0062 , B81B2201/0235 , B81B2201/0242 , B81B2207/015 , B81C1/00246 , B81C2203/0735 , G01C19/5712
摘要： In at least one embodiment of the invention, a method of manufacturing an integrated circuit including a microelectromechanical system (MEMS) device includes forming a first structural layer above at least one semiconductor device formed on a substrate. The method includes forming a second structural layer above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. The MEMS device comprises at least one portion of at least one of the first and second structural layers. In at least one embodiment of the invention, the method is carried out at one or more temperatures less than a tolerable threshold temperature for the at least one semiconductor device.
摘要翻译：在本发明的至少一个实施例中，制造包括微机电系统（MEMS）器件的集成电路的方法包括在形成在衬底上的至少一个半导体器件上形成第一结构层。该方法包括在第一结构层上形成第二结构层。第二结构层的厚度基本上大于第一结构层的厚度。 MEMS器件包括第一和第二结构层中的至少一个的至少一部分。在本发明的至少一个实施例中，所述方法在小于所述至少一个半导体器件的可容许阈值温度的一个或多个温度下进行。

37. 发明授权

US08456252B2 Dual in-situ mixing for extended tuning range of resonators 有权
标题翻译：双路原位混合，用于扩展谐振器的调谐范围
公开(公告)号：US08456252B2
公开(公告)日：2013-06-04
申请号：US13242602
申请日：2011-09-23
申请人： Emmanuel P. Quevy
发明人： Emmanuel P. Quevy
IPC分类号： H03B5/30 , H03H9/46 , H04B1/26
CPC分类号： H03H9/2426 , H03B21/01 , H03H9/02377 , H03H9/2436 , H03H2009/2442
摘要： A dual in-situ mixing approach for extended tuning range of resonators. In one embodiment, a dual in-situ mixing device tunes an input radio-frequency (RF) signal using a first mixer, a resonator body, and a second mixer. In one embodiment, the first mixer is coupled to receive the input RF signal and a local oscillator signal. The resonator body receives the output of the first mixer, and the second mixer is coupled to receive the output of the resonator body and the local oscillator signal to provide a tuned output RF signal as a function of the frequency of local oscillator signal.
摘要翻译：用于扩展谐振器调谐范围的双位置混合方法。在一个实施例中，双原位混合装置使用第一混频器，谐振器本体和第二混频器来调谐输入射频（RF）信号。在一个实施例中，第一混频器被耦合以接收输入RF信号和本地振荡器信号。谐振器主体接收第一混频器的输出，并且第二混频器被耦合以接收谐振器主体的输出和本地振荡器信号，以提供作为本地振荡器信号的频率的函数的调谐输出RF信号。

38. 发明申请

US20130002244A1 MEMS-BASED MAGNETIC SENSOR WITH A LORENTZ FORCE ACTUATOR USED AS FORCE FEEDBACK 有权
标题翻译：基于MEMS的磁力传感器，具有用于反馈的LORENTZ力传感器
公开(公告)号：US20130002244A1
公开(公告)日：2013-01-03
申请号：US13174417
申请日：2011-06-30
申请人： Emmanuel P. Quevy
发明人： Emmanuel P. Quevy
IPC分类号： G01R33/02
CPC分类号： G01R33/0286
摘要： A magnetic sensor utilizes a MEMS device that has at least one vibrating member and at least one conductive path integral with the vibrating member so that a current flows along the vibrating member and in the presence of a magnetic field interaction of the magnetic field and the point charges in the current on the conductive path due to the Lorentz force causes a change in vibration of the vibrating member. That change can be used to provide a measure of the magnetic field.
摘要翻译：磁传感器利用具有至少一个振动构件和至少一个与振动构件成一体的导电路径的MEMS装置，使得电流沿着振动构件流动，并且在存在磁场和点的磁场相互作用的情况下由于洛伦兹力导致的导电路径上的电流的电荷导致振动构件的振动的变化。该变化可用于提供磁场的测量。

39. 发明授权

US08313970B2 Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
标题翻译：用于真空封装装置的平面微壳和大马士革制造方法
公开(公告)号：US08313970B2
公开(公告)日：2012-11-20
申请号：US13017892
申请日：2011-01-31
申请人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
发明人： Emmanuel P. Quevy , Pezhman Monadgemi , Roger T. Howe
IPC分类号： H01L21/00
CPC分类号： B81C1/00293 , B81B7/02 , B81C1/00246 , B81C2203/0136 , B81C2203/0145 , B81C2203/0721 , B81C2203/0735 , B81C2203/0771
摘要： Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.
摘要翻译：用于MEMS和微电子等器件封装的低温多层平面微型壳体。微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

40. 发明申请

US20110210797A1 Highly accurate temperature stable clock based on differential frequency discrimination of oscillators 有权
公开(公告)号：US20110210797A1
公开(公告)日：2011-09-01
申请号：US13068117
申请日：2011-05-03
申请人： Emmanuel P. Quevy , Manu Seth
发明人： Emmanuel P. Quevy , Manu Seth
IPC分类号： H03B28/00
CPC分类号： H03L1/022 , H03L7/085 , H03L7/16
摘要： An apparatus and a method for compensating for a mismatch in temperature coefficients of two oscillator frequencies to match a desired frequency ratio between the two oscillator frequencies over a temperature range. In one embodiment of a temperature sensor, first and second oscillators of different temperature characteristics are coupled to a differential frequency discriminator (DFD) circuit. The DFD circuit compensates for the different characteristics in order to match a frequency difference between the first and second frequencies over a temperature range.

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