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1. 发明授权

US08852984B1 Technique for forming a MEMS device 有权
标题翻译：用于形成MEMS器件的技术
公开(公告)号：US08852984B1
公开(公告)日：2014-10-07
申请号：US13075800
申请日：2011-03-30
申请人： Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
发明人： Emmanuel P. Quevy , Carrie W. Low , Jeremy Ryan Hui , Zhen Gu
IPC分类号： H01L21/20
CPC分类号： B81B3/0062 , B81B2201/0235 , B81B2201/0242 , B81B2207/015 , B81C1/00246 , B81C2203/0735 , G01C19/5712
摘要： In at least one embodiment of the invention, a method of manufacturing an integrated circuit including a microelectromechanical system (MEMS) device includes forming a first structural layer above at least one semiconductor device formed on a substrate. The method includes forming a second structural layer above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. The MEMS device comprises at least one portion of at least one of the first and second structural layers. In at least one embodiment of the invention, the method is carried out at one or more temperatures less than a tolerable threshold temperature for the at least one semiconductor device.
摘要翻译：在本发明的至少一个实施例中，制造包括微机电系统（MEMS）器件的集成电路的方法包括在形成在衬底上的至少一个半导体器件上形成第一结构层。该方法包括在第一结构层上形成第二结构层。第二结构层的厚度基本上大于第一结构层的厚度。 MEMS器件包括第一和第二结构层中的至少一个的至少一部分。在本发明的至少一个实施例中，所述方法在小于所述至少一个半导体器件的可容许阈值温度的一个或多个温度下进行。

2. 发明授权

US08877536B1 Technique for forming a MEMS device using island structures 有权
标题翻译：使用岛结构形成MEMS器件的技术
公开(公告)号：US08877536B1
公开(公告)日：2014-11-04
申请号：US13075806
申请日：2011-03-30
申请人： Emmanuel P. Quevy , Carrie W. Low
发明人： Emmanuel P. Quevy , Carrie W. Low
IPC分类号： H01L21/00
CPC分类号： B81B3/0072
摘要： A method of manufacturing an integrated circuit including a MEMS device includes forming a structural layer above a substrate including at least one semiconductor device. The method includes forming an attachment to a first portion of the structural layer, the attachment having a thickness substantially greater than a thickness of the structural layer. In at least one embodiment of the method, the attachment is conjoined with the first portion of the structural layer and the first portion of the structural layer and the attachment are operative to mechanically move in unison. In at least one embodiment of the method, forming the attachment includes forming a patterned filler layer of a first material above the structural layer and forming a patterned conformal layer of a second material on the patterned filler layer. The filler layer has a thickness substantially greater than the thickness of the structural layer.
摘要翻译：制造包括MEMS器件的集成电路的方法包括在包括至少一个半导体器件的衬底上形成结构层。该方法包括形成与结构层的第一部分的附件，附件具有基本上大于结构层厚度的厚度。在该方法的至少一个实施例中，附件与结构层的第一部分结合，并且结构层的第一部分和附件可操作以一致地机械移动。在该方法的至少一个实施例中，形成附件包括在结构层上方形成第一材料的图案填充层，并在图案化的填料层上形成第二材料的图案化保形层。填料层的厚度基本上大于结构层的厚度。

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