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31. 发明授权

US6030722A Storage battery terminal structure 失效
标题翻译：蓄电池端子结构
公开(公告)号：US6030722A
公开(公告)日：2000-02-29
申请号：US834919
申请日：1997-04-07
申请人： Hidehiko Kuboshima , Nobuaki Yoshioka , Akira Maeda , Kazuhisa Ishizaki , Mitsuhiro Matsumoto , Hajime Satoh , Satoru Chujo , Sinji Nakamoto , Katsuhiro Imaizumi
发明人： Hidehiko Kuboshima , Nobuaki Yoshioka , Akira Maeda , Kazuhisa Ishizaki , Mitsuhiro Matsumoto , Hajime Satoh , Satoru Chujo , Sinji Nakamoto , Katsuhiro Imaizumi
IPC分类号： H01M2/30 , H01M2/20 , H01R11/28
CPC分类号： H01R11/282 , H01M2/206
摘要： A storage battery terminal structure of the present invention includes: an annular recessed groove that is arranged on an upper end portion of a cylindrical male terminal; retaining projections that are engageable with the annular recessed groove; a housing that is an outer enclosing body of a female terminal; flexible arms, each flexible arm not only having a retaining projection on an upper end portion of an inner wall of a rigid sleeve of the housing surrounding the male terminal in order to release the corresponding retaining projection from the annular recessed groove but also being formed by a pair of slits formed from an upper end of the rigid sleeve so as to interpose the corresponding retaining projection therebetween; and a release button that is arranged on an upper end portion of the rigid sleeve so as to be vertically movable so that the flexible arms can be flexed sidewards and that has slopes on a lower surface thereof, the slopes facing sidewards.
摘要翻译：本发明的蓄电池端子结构包括：环状凹槽，其设置在圆筒形阳端子的上端部; 保持突起，其能够与环形凹槽接合; 作为母端子的外包体的壳体; 柔性臂，每个柔性臂不仅在围绕阳端子的壳体的刚性套筒的内壁的上端部具有保持突起，以便将相应的保持突起从环形凹槽释放，而且还由一对狭缝，由刚性套筒的上端形成，以便将相应的保持突起插入其间; 以及释放按钮，其布置在所述刚性套筒的上端部分上，以便能够垂直移动，使得所述柔性臂可以向侧弯曲并且在其下表面上具有斜面，所述斜面面向侧面。

32. 发明授权

US5430076A Glass fiber strand for reinforcing a thermoplastic resin and process for preparing a fiber-reinforced resin product 失效
标题翻译：用于增强热塑性树脂的玻璃纤维束和用于制备纤维增强树脂产品的方法
公开(公告)号：US5430076A
公开(公告)日：1995-07-04
申请号：US9011
申请日：1993-01-26
申请人： Mitsuhiro Matsumoto , Akira Kitsunezuka , Hiroki Sato , Shigeharu Arai
发明人： Mitsuhiro Matsumoto , Akira Kitsunezuka , Hiroki Sato , Shigeharu Arai
IPC分类号： C08K9/08 , C08K9/06
CPC分类号： C08K9/08
摘要： A glass fiber strand for reinforcing a thermoplastic resin, consisting essentially of a strand of glass filaments having a sizing agent applied thereto and bundled, and an auxiliary resin capable of forming a polymer alloy with a main thermoplastic resin to be reinforced, coated on the surface of the strand.
摘要翻译：一种用于增强热塑性树脂的玻璃纤维束，其基本上由一根施加到其上并具有施胶剂的玻璃纤维束组成，并且能够与要加强的主要热塑性树脂形成聚合物合金的辅助树脂涂覆在表面上的链。

33. 发明授权

US5408048A Pressure-welding type electric terminal 失效
标题翻译：压焊式电气端子
公开(公告)号：US5408048A
公开(公告)日：1995-04-18
申请号：US189844
申请日：1994-02-01
申请人： Takayoshi Endo , Satoshi Yamada , Mitsuhiro Matsumoto
发明人： Takayoshi Endo , Satoshi Yamada , Mitsuhiro Matsumoto
IPC分类号： H01R4/24 , H01R43/16
CPC分类号： H01R4/2462 , H01R4/2466 , H01R4/2425 , H01R43/16
摘要： A pressure-welding type electric terminal according to the present invention is constructed such that it comprises an electrically contacting section and an electric wire connecting section which is composed of an electric wire pressure-welding section and an electric wire retaining section, wherein the electric wire pressure-welding section further comprises: a sub-plate section provided at one part of a longitudinal side of the base plate by way of a connecting portion and superposed on the base plate, which sub-plate section being integrally provided with a sub section having two consecutive elongate holes; an upright section formed with a slot therein for receiving an electric wire, which upright section being formed by vertically folding the sub section; and a pair of fixing pieces for firmly fixing the superposed sub-plate section at the front and rear sides of the upright section respectively.Since the present invention is constructed as such, even when an electric wire rather on the fat side is pressed against the wire pressure-welding section to electrically connect thereto, it will not be expandedly deformed neither forward nor backward, providing thereby a sufficient durability.
摘要翻译：根据本发明的压接式电气端子构造成包括电接触部分和由电线压焊部分和电线保持部分组成的电线连接部分，其中电线压焊部分还包括：子板部分，其通过连接部分设置在基板的纵向侧的一部分上并叠置在基板上，该副板部分整体设置有具有两个连续的长孔; 直立部分，其形成有用于容纳电线的槽，所述直立部分通过垂直折叠所述子部分形成; 以及一对固定片，用于将叠置的副板部分分别牢固地固定在直立部分的前侧和后侧。由于本发明是这样构成的，即使在电线而不是脂肪侧的电线被压在线压接部上而与其电连接的情况下，也不会向前或向后发生扩张变形，从而提供足够的耐久性。

34. 发明授权

US5228047A Semiconductor laser device and a method for producing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US5228047A
公开(公告)日：1993-07-13
申请号：US762769
申请日：1991-09-20
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo , Tadashi Takeoka , Hiroshi Nakatsu , Masanori Watanabe , Osamu Yamamoto , Saburo Yamamoto
IPC分类号： H01L33/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/323
CPC分类号： H01S5/164 , H01L33/0062 , H01S2301/18 , H01S5/0201 , H01S5/0202 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/1064 , H01S5/204 , H01S5/2211 , H01S5/222 , H01S5/3201 , H01S5/32316 , H01S5/32325
摘要： A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

35. 发明授权

US5171706A Method for the production of a semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US5171706A
公开(公告)日：1992-12-15
申请号：US739767
申请日：1991-08-01
申请人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo
发明人： Mitsuhiro Matsumoto , Kazuaki Sasaki , Masaki Kondo
IPC分类号： H01S5/00 , H01L21/314 , H01S5/02 , H01S5/028 , H01S5/16
CPC分类号： H01S5/164 , H01L21/314 , H01S5/0202 , H01S5/0281 , H01S5/0282
摘要： There is provided a method for the production of a semiconductor laser device which emits laser light from a facet. The method includes the steps of: growing a multi-layered structure containing an active layer for laser oscillation on a semiconductor substrate to form a wafer; etching the multi-layered structure to form a striped groove perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets; bringing the facets into contact with a sulfur-containing solution; subjecting the facets to heat treatment; growing a semiconductor layer on the surface of the facets, which has a band gap greater than that of the active layer; and cleaving the wafer along the striped groove to obtain a semiconductor laser device.

36. 发明授权

US4914669A Semiconductor laser array apparatus 失效
标题翻译：半导体激光阵列装置
公开(公告)号：US4914669A
公开(公告)日：1990-04-03
申请号：US222968
申请日：1988-07-22
申请人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Sadayoshi Matsui , Mototaka Taneya , Mitsuhiro Matsumoto , Hiroyuki Hosoba
IPC分类号： H01S5/00 , H01S5/028 , H01S5/10 , H01S5/40
CPC分类号： H01S5/4031 , H01S5/028 , H01S5/1028 , H01S5/1032
摘要： A semiconductor laser array apparatus comprising a single substrate and a plurality of semiconductor laser devices that are disposed with a given pitch on the substrate, some of the semiconductor laser devices constituting laser devices of a laser oscillation-operating area of the semiconductor laser array apparatus and the other semiconductor laser devices constituting laser devices of the non-laser oscillation-operating areas that are positioned outside of the laser oscillation-operating area, wherein the oscillation threshold current level of at least one of the semiconductor laser devices of each of the non-laser oscillation-operating areas that is the closest to the laser oscillation-operating area is higher than those of the semiconductor laser devices of the laser oscillation-operating area.

37. 发明授权

US4896933A Higher harmonic generator 失效
标题翻译：高次谐波发生器
公开(公告)号：US4896933A
公开(公告)日：1990-01-30
申请号：US267730
申请日：1988-11-04
申请人： Seiki Yano , Mitsuhiro Matsumoto , Toshiki Hijikata
发明人： Seiki Yano , Mitsuhiro Matsumoto , Toshiki Hijikata
IPC分类号： G02B6/12 , G02F1/37 , G02F1/377
CPC分类号： G02F1/377
摘要： A higher harmonic wave generator, comprising: (1) a first optical waveguide made of a nonlinear optical material, having a structure which can guide the incident fundamental wave; and (2) a second optical waveguide made of nonlinear optical material, connected to the first optical wave guide optically, having a structure which can guide a higher harmonic wave of the fundamental wave; wherein the effective refractive index of the first optical waveguide is made to be equal to the effective refractive index of the second optical waveguide.
摘要翻译：一种高次谐波发生器，包括：（1）由非线性光学材料制成的具有可引导入射基波的结构的第一光波导; 和（2）由非线性光学材料制成的第二光波导，其光学连接到第一光波导，具有能够引导基波的高次谐波的结构; 其中使第一光波导的有效折射率等于第二光波导的有效折射率。

38. 发明授权

US4764936A Semiconductor laser array device 失效
标题翻译：半导体激光阵列器件
公开(公告)号：US4764936A
公开(公告)日：1988-08-16
申请号：US901759
申请日：1986-08-28
申请人： Mototaka Taneya , Mitsuhiro Matsumoto , Hidenori Kawanishi , Sadayoshi Matsui
发明人： Mototaka Taneya , Mitsuhiro Matsumoto , Hidenori Kawanishi , Sadayoshi Matsui
IPC分类号： H01S5/00 , H01S5/22 , H01S5/40 , H01S3/19
CPC分类号： H01S5/22 , H01S5/4031
摘要： A semiconductor laser array device comprising an oscillation operating area provided with a plurality of first index-waveguides in a parallel manner and a non-oscillation operating area provided with a plurality of second index-waveguides in a parallel manner through which laser light produced in said oscillation operating area are guided through the waveguide from said oscillation operating area to the end facets of the second index-waveguides of said non-oscillation operating area, wherein the second index-waveguides are different in length between the adjacent waveguides and the end facet of each of the second index-waveguides does not function as a cavity facet of the laser but it functions as the light-emitting facet of the device.
摘要翻译：一种半导体激光器阵列器件，包括以并行方式设置有多个第一折射率波导的振荡操作区域和以所述平行方式设置有多个第二折射率波导的非振荡操作区域，所述第二折射率波导在所述振荡操作区域被引导通过波导从所述振荡操作区域到所述非振荡操作区域的第二折射率波导的端面，其中第二折射率波导在相邻波导与端面之间的长度不同每个第二折射率波导不用作激光器的腔面，但其用作器件的发光面。

39. 发明授权

US08575472B2 Photoelectric conversion device and method for producing same 失效
标题翻译：光电转换装置及其制造方法
公开(公告)号：US08575472B2
公开(公告)日：2013-11-05
申请号：US13523323
申请日：2012-06-14
申请人： Kazuya Murata , Mitsuhiro Matsumoto
发明人： Kazuya Murata , Mitsuhiro Matsumoto
IPC分类号： H01L31/00
CPC分类号： H01L31/0747 , H01L31/077 , Y02E10/50
摘要： In order to increase photoelectric conversion efficiency in a photoelectric conversion device, there is disclosed a photoelectric converter containing a photoelectric conversion unit in which a p-type layer (40) containing a p-type dopant, an i-type layer (42) that is a microcrystalline silicon layer that is an electricity-generating layer, and an n-type layer (44) containing an n-type dopant are layered, wherein the p-type layer (40) is caused to have a layered structure comprising a first p-type layer (40a) that is a microcrystalline silicon layer, and a second p-type layer (40b) containing at least one of an amorphous silicon carbide p-type layer and an amorphous silicon p-type layer disclosed between the microcrystalline silicon p-type layer (40a) and the i-type layer (42). The second p-type layer (40b) is provided with an oxide layer on the side of the i-type layer (42).
摘要翻译：为了提高光电转换元件的光电转换效率，公开了一种光电转换器，其包含光电转换单元，其中包含p型掺杂剂的p型层（40），i型层（42），是作为发电层的微晶硅层，并且层叠含有n型掺杂剂的n型层（44），其中使p型层（40）具有层状结构，其包括第一作为微晶硅层的p型层（40a）和包含微晶硅之间公开的非晶质碳化硅p型层和非晶硅p型层中的至少一种的第二p型层（40b） p型层（40a）和i型层（42）。第二p型层（40b）在i型层（42）侧设置有氧化物层。

40. 发明申请

US20130121914A1 TREATMENT DRUG FOR AUTOIMMUNE DISEASES AND ALLERGIC DISEASES 有权
公开(公告)号：US20130121914A1
公开(公告)日：2013-05-16
申请号：US13701408
申请日：2011-06-02
申请人： Koichi Kino , Toshihiro Kai , Mitsuhiro Matsumoto , Masunori Kajikawa , Masahito Sugiura , Emi Shimizu
发明人： Koichi Kino , Toshihiro Kai , Mitsuhiro Matsumoto , Masunori Kajikawa , Masahito Sugiura , Emi Shimizu
IPC分类号： A61K39/395 , C12Q1/68 , G01N33/68
CPC分类号： C07K16/42 , A61K39/39533 , A61K2039/505 , C07K16/2803 , C07K2317/73 , C12Q1/6888 , G01N33/505 , G01N33/6893 , G01N2333/4703
摘要： The present invention provides an agent for the prophylaxis or therapy of autoimmune diseases or allergic diseases, which contains an anti-Embigin antibody, particularly an anti-Embigin antibody showing cytotoxicity or a cytotoxicity inducing activity, an agent for the prophylaxis or therapy of diseases involving Th17 cell, and a cytotoxic agent to Th17 cell. In addition, an agent for detection of Th17 cell, which contains an anti-Embigin antibody, a convenient detection method of Th17 cell, which uses the agent, a method of efficiently delivering a drug and the like in a Th17 cell selective manner, which uses an anti-Embigin antibody, and a drug delivery system to Th17 cell are provided.

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