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31. 发明申请

US20120166997A1 MOBILE TERMINAL AND METHOD OF SHARING INFORMATION THEREIN 有权
标题翻译：移动终端和共享信息的方法
公开(公告)号：US20120166997A1
公开(公告)日：2012-06-28
申请号：US13169777
申请日：2011-06-27
申请人： Hyunah Cho , Hyehyun Kim , Ki Seo Kim , Dongwoo Kim
发明人： Hyunah Cho , Hyehyun Kim , Ki Seo Kim , Dongwoo Kim
IPC分类号： G06F3/048
CPC分类号： H04M1/72563 , G06F21/6218 , G06F21/71 , G06F2221/2105
摘要： A mobile terminal including a communication unit configured to communicate with at least one other terminal; a memory configured to store at least first and second operating systems including at least first and second modes, respectively; and a controller configured to execute the first and second operating systems, to simultaneously display first and second information screens on a display unit of the mobile terminal corresponding to the first and second modes, to receive a sharing signal requesting information from one of the first and second information screens be shared with the other of the first and second information screens, and to selectively share the requested information between the first and second information screens based on a predetermined criterion.
摘要翻译：一种移动终端，包括被配置为与至少一个其他终端进行通信的通信单元; 存储器，被配置为分别存储至少包括第一和第二模式的第一和第二操作系统; 以及控制器，被配置为执行所述第一和第二操作系统，以在与所述第一和第二模式相对应的所述移动终端的显示单元上同时显示第一和第二信息屏幕，以从所述第一和第二模式中的一个和第二模式接收请求信息的共享信号; 第二信息屏幕与第一和第二信息屏幕中的另一个共享，并且基于预定标准选择性地在第一和第二信息屏幕之间共享所请求的信息。

32. 发明授权

US07850992B2 Cucurbituril-containing gel and method of preparing the same 失效
标题翻译：含有葫芦素的凝胶及其制备方法
公开(公告)号：US07850992B2
公开(公告)日：2010-12-14
申请号：US11552624
申请日：2006-10-25
申请人： Kimoon Kim , II Ha Hwang , Woo Sung Jeon , Hee Joon Kim , Dongwoo Kim , Narayanan Selvapalam , Erumaipatty R. Nagarajan
发明人： Kimoon Kim , II Ha Hwang , Woo Sung Jeon , Hee Joon Kim , Dongwoo Kim , Narayanan Selvapalam , Erumaipatty R. Nagarajan
IPC分类号： A61K9/14
CPC分类号： A61K9/06 , A61K31/573 , A61K38/00 , A61K41/0042 , A61K47/16
摘要： Provided are a gel including a compound represented by Formula 1 below and a method of preparing the same: wherein n, X, A1, and A2 are as defined in the specification.
摘要翻译：提供一种凝胶，其包含下述通式1所示的化合物及其制备方法：其中n，X，A1和A2如说明书中所定义。

33. 发明授权

US07781050B2 Ultrathin polymer film using cucurbituril derivative and method of forming the same 有权
标题翻译：使用葫芦素衍生物的超薄聚合物膜及其形成方法
公开(公告)号：US07781050B2
公开(公告)日：2010-08-24
申请号：US11587046
申请日：2005-04-21
申请人： Kimoon Kim , Woo Sung Jeon , Dongwoo Kim , Dong Hyun Oh , Sang Yong Jon
发明人： Kimoon Kim , Woo Sung Jeon , Dongwoo Kim , Dong Hyun Oh , Sang Yong Jon
IPC分类号： C08J5/22 , B32B27/32
CPC分类号： C08J5/18 , B82Y30/00 , C08J2329/02 , Y10S977/882 , Y10S977/883 , Y10S977/897 , Y10T428/31504 , Y10T428/31678
摘要： Provided are an ultrathin polymer film formed by homopolymerization or copolymerization of a cucurbituril derivative with an organic monomer and a method of forming the same. The ultrathin polymer film has a thickness of 10 nm or less, and can retain its film shape even after being separated from a substrate.
摘要翻译：提供了通过葫芦巴衍生物与有机单体的均聚或共聚形成的超薄聚合物膜及其形成方法。超薄聚合物膜的厚度为10nm以下，即使在与基板分离后也能够保持其膜形状。

34. 发明申请

US20090104519A1 NEGATIVE ELECTRODE FOR LITHIUM RECHARGEABLE BATTERY AND LITHIUM RECHARGEABLE BATTERY ADOPTING THE SAME 有权
标题翻译：用于锂可充电电池的负极和通过其的锂可充电电池
公开(公告)号：US20090104519A1
公开(公告)日：2009-04-23
申请号：US12256304
申请日：2008-10-22
申请人： Bongchull Kim , Jangho Lee , Dongwoo Kim , Hayoung Lee
发明人： Bongchull Kim , Jangho Lee , Dongwoo Kim , Hayoung Lee
IPC分类号： H01M4/38 , H01M4/48 , H01M2/02
CPC分类号： H01M4/587 , H01M4/364 , H01M4/38 , H01M4/386 , H01M4/387 , H01M4/485 , H01M10/0525 , Y02E60/122
摘要： A negative electrode for a lithium rechargeable battery comprising: active material layers including metal-carbon combination active material particles including at least one active material selected from metal or metal oxide and carbonaceous active material, soft graphite particles, and a binder for binding the metal-carbon combination active material particles and the soft graphite particles; and a current collector on which surface the active material layers are stacked, wherein the soft graphite particles have a pellet density of 1.6˜1.9 g/cc when a pellet is formed at a press pressure of 1 ton/cm2, and the lithium rechargeable battery adopting the negative electrode.Soft graphite is used as a shock absorbing material when the bulk of the metal-carbon combination active material particles expands by the charging of the battery, which inhibits the expansion of bulk in the active material layer as a whole, maintains and attains a conductive contact point between the active material particles including the soft graphite particles, thereby preventing degradation of capacity due to a repetition of the charging and discharging of the battery and increasing the lifetime cycle of the battery.
摘要翻译：一种用于锂可再充电电池的负极，包括：包括金属 - 碳组合活性材料颗粒的活性材料层，包括至少一种选自金属或金属氧化物的活性材料和碳质活性材料，软石墨颗粒和用于粘合金属 - 碳组合活性物质颗粒和软石墨颗粒; 以及活性物质层的表面层叠的集电体，其中，当以1ton / cm2的压力形成颗粒时，软质石墨颗粒的颗粒密度为1.6〜1.9g / cc，锂可充电电池采用负极。当金属 - 碳组合活性材料颗粒的大部分通过电池的充电而膨胀时，软石墨被用作冲击吸收材料，其抑制活性材料层整体上的体积膨胀，保持并达到导电接触包括软石墨颗粒在内的活性物质颗粒之间，从而防止由于重复充电和放电而导致的电容劣化，并增加电池的寿命周期。

35. 发明申请

US20070224403A1 Ultrathin Polymer Film Using Cucurbituril Derivative and Method of Forming the Same 有权
标题翻译：使用葫芦素衍生物的超薄聚合物膜及其形成方法
公开(公告)号：US20070224403A1
公开(公告)日：2007-09-27
申请号：US11587046
申请日：2005-04-21
申请人： Kimoon Kim , Woo Sung Jeon , Dongwoo Kim , Dong Oh , Sang Jon
发明人： Kimoon Kim , Woo Sung Jeon , Dongwoo Kim , Dong Oh , Sang Jon
IPC分类号： C08J5/22
CPC分类号： C08J5/18 , B82Y30/00 , C08J2329/02 , Y10S977/882 , Y10S977/883 , Y10S977/897 , Y10T428/31504 , Y10T428/31678
摘要： Provided are an ultrathin polymer film formed by homopolymerization or copolymerization of a cucurbituril derivative with an organic monomer and a method of forming the same. The ultrathin polymer film has a thickness of 10 nm or less, and can retain its film shape even after being separated from a substrate.
摘要翻译：提供了通过葫芦巴衍生物与有机单体的均聚或共聚形成的超薄聚合物膜及其形成方法。超薄聚合物膜的厚度为10nm以下，即使在与基板分离后也能够保持其膜形状。

36. 发明授权

US09997530B2 Three-dimensional semiconductor memory device and method of fabricating the same 有权
公开(公告)号：US09997530B2
公开(公告)日：2018-06-12
申请号：US14708477
申请日：2015-05-11
申请人： Gukhyon Yon , Dongwoo Kim , Kihyun Hwang , Dongkyum Kim , Dongchul Yoo
发明人： Gukhyon Yon , Dongwoo Kim , Kihyun Hwang , Dongkyum Kim , Dongchul Yoo
IPC分类号： H01L27/11582 , H01L27/11573 , H01L27/24 , H01L27/11578 , H01L27/11556 , H01L27/11575 , H01L45/00
CPC分类号： H01L27/11582 , H01L27/11556 , H01L27/11573 , H01L27/11575 , H01L27/11578 , H01L27/2436 , H01L27/249 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146 , H01L45/147 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional semiconductor memory device includes a peripheral circuit structure on a substrate, a horizontal active layer on the peripheral circuit structure, stacks provided on the horizontal active layer to include a plurality of electrodes, a vertical structure vertically penetrating the stacks, a common source region between ones of the stacks and in the horizontal active layer, and pick-up regions in the horizontal active layer. The horizontal active layer includes first, second, and third active semiconductor layers sequentially stacked on the peripheral circuit structure. The first and third active semiconductor layers are doped to have high and low impurity concentrations, respectively, and the second active semiconductor layer includes an impurity diffusion restraining material.

37. 发明授权

US08598647B2 Three-dimensional semiconductor memory devices 有权
标题翻译：三维半导体存储器件
公开(公告)号：US08598647B2
公开(公告)日：2013-12-03
申请号：US13291519
申请日：2011-11-08
申请人： Dongwoo Kim , Toshiro Nakanishi , SeungHyun Lim , Bio Kim , Kihyun Hwang , Jaeyoung Ahn
发明人： Dongwoo Kim , Toshiro Nakanishi , SeungHyun Lim , Bio Kim , Kihyun Hwang , Jaeyoung Ahn
IPC分类号： H01L29/788
CPC分类号： H01L27/11556 , H01L27/11582 , H01L29/7889 , H01L29/7926
摘要： Provided are three-dimensional semiconductor devices. The device includes conductive patterns stacked on a substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern includes a first doped region disposed adjacent to at least one of the conductive patterns, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.
摘要翻译：提供三维半导体器件。该器件包括堆叠在衬底上的导电图案，以及穿透要连接到衬底的导电图案的有源图案。有源图案包括邻近至少一个导电图案设置的第一掺杂区域和与第一掺杂区域的至少一部分重叠的扩散阻抗掺杂区域。扩散阻止掺杂区域可以是掺杂有碳的区域。

38. 发明申请

US20130007842A1 MOBILE TERMINAL AND DISPLAY CONTROLLING METHOD THEREIN 有权
标题翻译：移动终端和显示控制方法
公开(公告)号：US20130007842A1
公开(公告)日：2013-01-03
申请号：US13475361
申请日：2012-05-18
申请人： Hyekyung PARK , Dongwoo Kim , Joowoo Lee , Hyehyun Kim , Hyunah Cho
发明人： Hyekyung PARK , Dongwoo Kim , Joowoo Lee , Hyehyun Kim , Hyunah Cho
IPC分类号： G06F15/16 , G06F21/00
CPC分类号： G11C5/04 , G06F21/74 , G11C2213/78 , H04L1/0016 , H04L63/08 , H04L67/306 , H04M1/72563 , H04M1/72577 , H04M2250/12 , H04M2250/22 , H04W4/20 , H04W4/60 , H04W12/08
摘要： A mobile terminal including a communication unit configured to communicate with at least one external terminal; a memory configured to store at least first and second operating systems including at least first and second modes, respectively; and a controller configured to execute the first operating system and activate the first mode corresponding to the first operating system, display a first information screen on a display unit of the mobile terminal corresponding to the activated first mode, display an application execution history for the first mode and the second mode on a prescribed region of the first information screen of the first mode, and identifiably display whether applications included in the application execution history were executed in the first mode or the second mode.
摘要翻译：一种移动终端，包括被配置为与至少一个外部终端通信的通信单元; 存储器，被配置为分别存储至少包括第一和第二模式的第一和第二操作系统; 以及控制器，其被配置为执行所述第一操作系统并激活对应于所述第一操作系统的所述第一模式，在与所激活的第一模式对应的所述移动终端的显示单元上显示第一信息屏幕，显示所述第一操作系统的应用执行历史模式和第二模式在第一模式的第一信息屏幕的规定区域上，并且可识别地显示包括在应用执行历史中的应用是否在第一模式或第二模式中被执行。

39. 发明申请

US20120148670A1 SENSITIVE POLYMER CAPSULE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：敏感聚合物胶囊及其制造方法
公开(公告)号：US20120148670A1
公开(公告)日：2012-06-14
申请号：US13390843
申请日：2010-08-11
申请人： Ki moon Kim , Jiyeong Lee , Dongwoo Kim , Eunju Kim , Hyuntae Jung
发明人： Ki moon Kim , Jiyeong Lee , Dongwoo Kim , Eunju Kim , Hyuntae Jung
IPC分类号： A61K9/48 , A61K38/38 , A61K31/56 , A61K38/23 , A61K31/704 , C08G73/06 , A61K38/28 , B82Y5/00 , B82Y30/00 , B82Y40/00
CPC分类号： C08J3/12 , A61K9/5138 , C08J2300/00 , C08J2365/00 , C08L65/00 , Y10T428/2982
摘要： A polymer capsule manufactured by polymerizing a compound represented by Formula 1, or polymerizing the compound of Formula 1 and a compound of Formula 2, wherein a detailed structure of the compounds of Formulae 1 and 2 is presented in the detailed description.
摘要翻译：通过聚合由式1表示的化合物或使式1的化合物和式2的化合物聚合制备的聚合物胶囊，其中在详细描述中呈现式1和2的化合物的详细结构。

40. 发明申请

US20120112260A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES 有权
标题翻译：三维半导体存储器件
公开(公告)号：US20120112260A1
公开(公告)日：2012-05-10
申请号：US13291519
申请日：2011-11-08
申请人： Dongwoo Kim , Toshiro Nakanishi , SeungHyun Lim , Bio Kim , Kihyun Hwang , Jaeyoung Ahn
发明人： Dongwoo Kim , Toshiro Nakanishi , SeungHyun Lim , Bio Kim , Kihyun Hwang , Jaeyoung Ahn
IPC分类号： H01L29/788 , H01L29/78
CPC分类号： H01L27/11556 , H01L27/11582 , H01L29/7889 , H01L29/7926
摘要： Provided are three-dimensional semiconductor devices. The device includes conductive patterns stacked on a substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern includes a first doped region disposed adjacent to at least one of the conductive patterns, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.
摘要翻译：提供三维半导体器件。该器件包括堆叠在衬底上的导电图案，以及穿透要连接到衬底的导电图案的有源图案。有源图案包括邻近至少一个导电图案设置的第一掺杂区域和与第一掺杂区域的至少一部分重叠的扩散阻抗掺杂区域。扩散阻止掺杂区域可以是掺杂有碳的区域。

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