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31. 发明申请

US20050126916A1 Three-dimensional structures having feature sizes smaller than a minimum feature size and methods for fabricating 有权
标题翻译：特征尺寸小于最小特征尺寸的三维结构和制造方法
公开(公告)号：US20050126916A1
公开(公告)日：2005-06-16
申请号：US10949744
申请日：2004-09-24
申请人： Michael Lockard , Adam Cohen , Vacit Arat , Dennis Smalley
发明人： Michael Lockard , Adam Cohen , Vacit Arat , Dennis Smalley
IPC分类号： C25D1/00 , C25D1/08 , C25D5/02 , C25D5/10 , C25D7/00 , H01M4/02
CPC分类号： C25D1/08 , B33Y70/00 , C25D1/003 , C25D5/022 , C25D5/10 , Y10T137/86759 , Y10T428/12361 , Y10T428/12479 , Y10T428/19 , Y10T428/24975 , Y10T428/249981 , Y10T428/29
摘要： Embodiments of multi-layer three-dimensional structures and formation methods provide structures with effective feature (e.g. opening) sizes (e.g. virtual gaps) that are smaller than a minimum feature size (MFS) that exists on each layer as a result of the formation method used in forming the structures. In some embodiments, multi-layer structures include a first element (e.g. first patterned layer with a gap) and a second element (e.g. second patterned layer with a gap) positioned adjacent the first element to define a third element (e.g. a net gap or opening resulting from the combined gaps of the first and second elements) where the first and second elements have features that are sized at least as large as the minimum feature size and the third element, at least in part, has dimensions or defines dimensions smaller than the minimum feature size.
摘要翻译：多层三维结构和形成方法的实施例提供结构，其具有小于作为形成方法的结果存在于每个层上的最小特征尺寸（MFS）的有效特征（例如开口）尺寸（例如，虚拟间隙）用于形成结构。在一些实施例中，多层结构包括第一元件（例如具有间隙的第一图案化层）和邻近第一元件定位的第二元件（例如具有间隙的第二图案化层），以限定第三元件（例如，净间隙或第一和第二元件的组合间隙产生的开口），其中第一和第二元件具有尺寸至少与最小特征尺寸一样大的特征，并且第三元件至少部分具有尺寸或尺寸小于最小特征尺寸。

32. 发明申请

US20050032375A1 Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization 审中-公开
标题翻译：使用粘附的掩模电化学制造结构的方法，包括电介质片，和/或通过平面化部分去除的种子层
公开(公告)号：US20050032375A1
公开(公告)日：2005-02-10
申请号：US10841300
申请日：2004-05-07
申请人： Michael Lockard , Dennis Smalley , Willa Larsen , Richard Chen
发明人： Michael Lockard , Dennis Smalley , Willa Larsen , Richard Chen
IPC分类号： B05D1/32 , C23C18/16 , C25D5/02 , C25D5/10 , H01L21/768 , H01L21/4763 , H01L21/302 , H01L21/461
CPC分类号： C25D1/003 , B33Y10/00 , C23C18/1605 , C23C18/1657 , C25D5/022 , C25D5/10 , H01L21/7682 , H01L21/76838
摘要： Embodiments of the present invention provide mesoscale or microscale three-dimensional structures (e.g. components, device, and the like). Embodiments relate to one or more of (1) the formation of such structures which incorporate sheets of dielectric material and/or wherein seed layer material used to allow electrodeposition over dielectric material is removed via planarization operations; (2) the formation of such structures wherein masks used for at least some selective patterning operations are obtained through transfer plating of masking material to a surface of a substrate or previously formed layer, and/or (3) the formation of such structures wherein masks used for forming at least portions of some layers are patterned on the build surface directly from data representing the mask configuration, e.g. in some embodiments mask patterning is achieved by selectively dispensing material via a computer controlled inkjet nozzle or array or via a computer controlled extrusion device.
摘要翻译：本发明的实施例提供中尺度或微尺寸的三维结构（例如部件，装置等）。实施例涉及以下一个或多个（1）形成这样的结构，其结合了介电材料片和/或其中用于允许通过电介质材料的电沉积的种子层材料通过平面化操作被去除; （2）形成这样的结构，其中用于至少一些选择性图案化操作的掩模通过将掩模材料转移到衬底或先前形成的层的表面获得，和/或（3）形成这样的结构，其中掩模用于形成至少部分一些层的图案直接来自表示掩模配置的数据在构建表面上图案化，例如在一些实施例中，通过经由计算机控制的喷墨喷嘴或阵列或经由计算机控制的挤出装置选择性地分配材料来实现掩模图案化。

33. 发明申请

US20060011486A1 Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization 有权
公开(公告)号：US20060011486A1
公开(公告)日：2006-01-19
申请号：US11139262
申请日：2005-05-26
申请人： Michael Lockard , Dennis Smalley , Willa Larsen , Richard Chen
发明人： Michael Lockard , Dennis Smalley , Willa Larsen , Richard Chen
IPC分类号： B05D1/32 , C25D5/02
CPC分类号： C25D1/003 , B33Y10/00 , B81C1/00492 , C23C18/1605 , C25D5/022 , C25D5/10 , H01L21/2885 , H01L21/7682 , H01L21/76838 , H01L21/76877 , H01L21/76885 , Y10T156/10 , Y10T156/1041
摘要： Embodiments of the present invention provide mesoscale or microscale three-dimensional structures (e.g. components, device, and the like). Embodiments relate to one or more of (1) the formation of such structures which incorporate sheets of dielectric material and/or wherein seed layer material used to allow electrodeposition over dielectric material is removed via planarization operations; (2) the formation of such structures wherein masks used for at least some selective patterning operations are obtained through transfer plating of masking material to a surface of a substrate or previously formed layer, and/or (3) the formation of such structures wherein masks used for forming at least portions of some layers are patterned on the build surface directly from data representing the mask configuration, e.g. in some embodiments mask patterning is achieved by selectively dispensing material via a computer controlled inkjet nozzle or array or via a computer controlled extrusion device.

34. 发明申请

US20050045484A1 Electrochemical fabrication process using directly patterned masks 审中-公开
标题翻译：使用直接图案化掩模的电化学制造工艺
公开(公告)号：US20050045484A1
公开(公告)日：2005-03-03
申请号：US10841005
申请日：2004-05-07
申请人： Dennis Smalley , Michael Lockard
发明人： Dennis Smalley , Michael Lockard
IPC分类号： B05D1/32 , C23C18/16 , C25D5/02 , C25D5/10 , H01L21/768
CPC分类号： C25D1/003 , B33Y10/00 , C23C18/1605 , C23C18/1657 , C25D5/022 , C25D5/10 , H01L21/7682 , H01L21/76838
摘要： Three-dimensional structures are electrochemically fabricated by depositing a first material onto previously deposited material through voids in a patterned mask where the patterned mask is at least temporarily adhered to previously deposited material and is formed and patterned directly from material selectively dispensed from a computer controlled dispensing device (e.g. an ink jet nozzle or array or an extrusion device). In some embodiments layers are formed one on top of another to build up multi-layer structures. In some embodiments the mask material acts as a build material while in other embodiments the mask material is replaced each layer by a different material which may, for example, be conductive or dielectric.
摘要翻译：通过在图案化掩模中通过空隙将第一材料沉积到先前沉积的材料上，其中图案化掩模至少暂时粘附到先前沉积的材料并且由从计算机控制的分配物选择性地分配的材料形成和图案化而形成和图案化地将三维结构电化学制造装置（例如喷墨嘴或阵列或挤出装置）。在一些实施例中，层之间形成一层，以构建多层结构。在一些实施例中，掩模材料用作构建材料，而在其它实施例中，掩模材料由例如导电或电介质的不同材料替换每层。

35. 发明申请

US20050023148A1 Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization 有权
标题翻译：使用粘附的掩模电化学制造结构的方法，包括电介质片，和/或通过平面化部分去除的种子层
公开(公告)号：US20050023148A1
公开(公告)日：2005-02-03
申请号：US10841383
申请日：2004-05-07
申请人： Michael Lockard , Dennis Smalley
发明人： Michael Lockard , Dennis Smalley
IPC分类号： B05D1/32 , C23C18/16 , C25D5/02 , C25D5/10 , H01L21/768
CPC分类号： C25D1/003 , B33Y10/00 , C23C18/1605 , C23C18/1657 , C25D5/022 , C25D5/10 , H01L21/7682 , H01L21/76838
摘要： Three-dimensional structures are electrochemically fabricated by depositing a first material onto previously deposited material through voids in a patterned mask where the patterned mask is at least temporarily adhered to a substrate or previously formed layer of material and is formed and patterned onto the substrate via a transfer tool patterned to enable transfer of a desired pattern of precursor masking material. In some embodiments the precursor material is transformed into masking material after transfer to the substrate while in other embodiments the precursor is transformed during or before transfer. In some embodiments layers are formed one on top of another to build up multi-layer structures. In some embodiments the mask material acts as a build material while in other embodiments the mask material is replaced each layer by a different material which may, for example, be conductive or dielectric.
摘要翻译：三维结构通过在图案化掩模中通过空隙沉积到先前沉积的材料上的电化学制造，其中图案化掩模至少暂时粘附到基底或先前形成的材料层，并且经由转印工具被图案化以能够转移所需的前体掩模材料图案。在一些实施方案中，前体材料在转移到基底之后被转化成掩模材料，而在其它实施方案中，前体在转移期间或之前被转化。在一些实施例中，层之间形成一层，以构建多层结构。在一些实施例中，掩模材料用作构建材料，而在其它实施例中，掩模材料由例如导电或电介质的不同材料替换每层。

36. 发明申请

US20080105646A1 Multi-step Release Method for Electrochemically Fabricated Structures 审中-公开
标题翻译：电化学结构的多步释放方法
公开(公告)号：US20080105646A1
公开(公告)日：2008-05-08
申请号：US11928061
申请日：2007-10-30
申请人： Adam Cohen , Michael Lockard , Dale McPherson
发明人： Adam Cohen , Michael Lockard , Dale McPherson
IPC分类号： C23F1/00 , C25D5/10
CPC分类号： C23C18/1689 , B33Y10/00 , B81C1/0019 , C23C18/1605 , C23C18/1651 , C25D1/003 , G03F7/00
摘要： Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.
摘要翻译：多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望的材料的牺牲材料（例如铜）结构体。在结构形成之后，通过多级蚀刻操作去除牺牲材料。在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。多级蚀刻操作可以通过中间后处理活动来分离，它们可以通过清洁操作或阻隔材料去除操作等分开。障碍物可以通过与结构材料或基底接触而固定就位，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留牺牲材料被蚀刻之后可以被自由地去除。

37. 发明申请

US20050223543A1 Electrochemical fabrication method for fabricating space transformers or co-fabricating probes and space transformers 失效
标题翻译：用于制造空间变压器或共同制造探针和空间变压器的电化学制造方法
公开(公告)号：US20050223543A1
公开(公告)日：2005-10-13
申请号：US11028945
申请日：2005-01-03
申请人： Adam Cohen , Vacit Arat , Michael Lockard , Christopher Bang , Pavel Lembrikov
发明人： Adam Cohen , Vacit Arat , Michael Lockard , Christopher Bang , Pavel Lembrikov
IPC分类号： H02M7/00
CPC分类号： G01R3/00 , B33Y10/00 , C23C18/1605 , C23C18/1651 , C25D1/003 , G01R1/06716 , G01R1/07378 , Y10T29/49002 , Y10T29/4902 , Y10T29/49078 , Y10T29/49204 , Y10T29/49222
摘要： Embodiments of the invention provide electrochemical fabrication processes that may be used for the fabrication of space transformers or the co-fabrication of microprobe arrays along with one or more space transformers.
摘要翻译：本发明的实施例提供了可用于制造空间变压器或与一个或多个空间变压器一起共同制造微探针阵列的电化学制造工艺。

38. 发明申请

US20050181316A1 Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures 有权
公开(公告)号：US20050181316A1
公开(公告)日：2005-08-18
申请号：US11028944
申请日：2005-01-03
申请人： Uri Frodis , Adam Cohen , Michael Lockard
发明人： Uri Frodis , Adam Cohen , Michael Lockard
IPC分类号： B05D1/38 , C08K3/00 , C25D3/30 , C25D3/38 , C25D3/48 , C25D5/02 , C25D5/10 , C25D21/12 , H01L21/288 , H01L21/301 , H01L21/302 , H01L21/4763 , H01L21/768
CPC分类号： C25D5/48 , B33Y10/00 , B81C1/00492 , B81C99/0065 , B81C2201/0104 , B81C2201/0197 , C25D1/00 , C25D1/003 , C25D5/022 , C25D5/10 , C25D21/12 , H01L21/2885 , H01L21/76885 , Y10T156/1052
摘要： Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

39. 发明申请

US20050072681A1 Multi-step release method for electrochemically fabricated structures 审中-公开
标题翻译：电化学制造结构的多步释放方法
公开(公告)号：US20050072681A1
公开(公告)日：2005-04-07
申请号：US10841347
申请日：2004-05-07
申请人： Adam Cohen , Michael Lockard , Dale McPherson
发明人： Adam Cohen , Michael Lockard , Dale McPherson
IPC分类号： B81B3/00 , G01P15/08 , G01P15/125 , H01P1/202 , H01P3/06 , H01P5/18 , H01P11/00 , H05K3/46 , C25D5/10
CPC分类号： H01P11/007 , B81B2201/042 , B81C1/00126 , B81C2201/0109 , B81C2201/0197 , C23C18/1605 , C23C18/1651 , C25D1/003 , G01P15/0802 , G01P15/125 , H01P1/202 , H01P3/06 , H01P5/183 , H01P11/00 , H01P11/005 , H05K3/4647
摘要： Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.
摘要翻译：多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望的材料的牺牲材料（例如铜）结构体。在结构形成之后，通过多级蚀刻操作去除牺牲材料。在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。多级蚀刻操作可以通过中间后处理活动来分离，它们可以通过清洁操作或阻隔材料去除操作等分开。障碍物可以通过与结构材料或基底接触而固定在适当的位置，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留牺牲材料被蚀刻之后被自由地去除。

40. 发明申请

US20070158200A1 Electrochemical fabrication processes incorporating non-platable metals and/or metals that are difficult to plate on 审中-公开
标题翻译：包含难以镀上的不可镀金属和/或金属的电化学制造工艺
公开(公告)号：US20070158200A1
公开(公告)日：2007-07-12
申请号：US11478934
申请日：2006-06-29
申请人： Adam Cohen , Michael Lockard , Gang Zhang
发明人： Adam Cohen , Michael Lockard , Gang Zhang
IPC分类号： C25D5/00 , B01J19/08
CPC分类号： C25D5/00 , B33Y10/00 , B81C99/0095 , B81C2201/0181 , C23C4/02 , C23C18/1605 , C23C18/1651 , C23C26/00 , C23C28/021 , C23C28/023 , C23C28/028 , C25D1/003
摘要： Embodiments are directed to electrochemically fabricating multi-layer three dimensional structures where each layer comprises at least one structural and at least one sacrificial material and wherein at least some metals or alloys are electrodeposited during the formation of some layers and at least some metals are deposited during the formation of some layers that are either difficult to electrodeposit and/or are difficult to electrodeposit onto. In some embodiments, the hard to electrodeposit metals (e.g. Ti, NiTi, W, Ta, Mo, etc.) may be deposited via chemical or physical vacuum deposition techniques while other techniques are used in other embodiments. In some embodiments, prior to electrodepositing metals, the surface of the previously formed layer is made to undergo appropriate preparation for receiving an electrodeposited material. Various surface preparation techniques are possible, including, for example, anodic activation, cathodic activation, and vacuum deposition of a seed layer and possibly an adhesion layer.
摘要翻译：实施例涉及电化学制造多层三维结构，其中每层包括至少一种结构和至少一种牺牲材料，并且其中至少一些金属或合金在形成一些层期间被电沉积，并且至少一些金属在形成难以电沉积和/或难以电沉积的一些层。在一些实施方案中，可以通过化学或物理真空沉积技术沉积难以电沉积的金属（例如Ti，NiTi，W，Ta，Mo等），而在其它实施方案中使用其它技术。在一些实施方案中，在电沉积金属之前，使先前形成的层的表面经历适当的准备以接收电沉积材料。各种表面处理技术是可能的，包括例如阳极活化，阴极活化和种子层以及可能的粘附层的真空沉积。

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