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1. 发明申请

US20050072681A1 Multi-step release method for electrochemically fabricated structures 审中-公开
标题翻译：电化学制造结构的多步释放方法
公开(公告)号：US20050072681A1
公开(公告)日：2005-04-07
申请号：US10841347
申请日：2004-05-07
申请人： Adam Cohen , Michael Lockard , Dale McPherson
发明人： Adam Cohen , Michael Lockard , Dale McPherson
IPC分类号： B81B3/00 , G01P15/08 , G01P15/125 , H01P1/202 , H01P3/06 , H01P5/18 , H01P11/00 , H05K3/46 , C25D5/10
CPC分类号： H01P11/007 , B81B2201/042 , B81C1/00126 , B81C2201/0109 , B81C2201/0197 , C23C18/1605 , C23C18/1651 , C25D1/003 , G01P15/0802 , G01P15/125 , H01P1/202 , H01P3/06 , H01P5/183 , H01P11/00 , H01P11/005 , H05K3/4647
摘要： Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.
摘要翻译：多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望的材料的牺牲材料（例如铜）结构体。在结构形成之后，通过多级蚀刻操作去除牺牲材料。在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。多级蚀刻操作可以通过中间后处理活动来分离，它们可以通过清洁操作或阻隔材料去除操作等分开。障碍物可以通过与结构材料或基底接触而固定在适当的位置，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留牺牲材料被蚀刻之后被自由地去除。

2. 发明申请

US20050230261A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 审中-公开
标题翻译：电介质材料和/或使用电介质基片的电化学制造方法
公开(公告)号：US20050230261A1
公开(公告)日：2005-10-20
申请号：US11029216
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/003 , C23C18/1605 , C23C18/1608 , C23C18/165 , C23C18/1653 , C23C18/405 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.
摘要翻译：本发明的一些实施例涉及在电介质或部分电介质基底上建立单层或多层结构的技术。某些实施方案将种子层材料直接沉积到基底材料上，而其它实施例使用中间粘合层材料。一些实施例使用不同种子层材料和/或用于牺牲和结构导电建筑材料的粘合层材料。一些实施例将种子层和/或粘合层材料应用于有选择性的方式，而其它实施例以毯子的方式应用材料。一些实施例通过平面化操作去除外来沉积物（例如沉积到不想要形成层的一部分的区域），而其他实施例通过蚀刻操作去除外来材料。其它实施方案涉及使用至少一种导电结构材料，至少一种导电牺牲材料和至少一种电介质材料形成的多层中尺度或微结构结构的电化学制造。在一些实施方案中，电介质材料是可UV固化的光聚合物。

3. 发明申请

US20080105646A1 Multi-step Release Method for Electrochemically Fabricated Structures 审中-公开
标题翻译：电化学结构的多步释放方法
公开(公告)号：US20080105646A1
公开(公告)日：2008-05-08
申请号：US11928061
申请日：2007-10-30
申请人： Adam Cohen , Michael Lockard , Dale McPherson
发明人： Adam Cohen , Michael Lockard , Dale McPherson
IPC分类号： C23F1/00 , C25D5/10
CPC分类号： C23C18/1689 , B33Y10/00 , B81C1/0019 , C23C18/1605 , C23C18/1651 , C25D1/003 , G03F7/00
摘要： Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.
摘要翻译：多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望的材料的牺牲材料（例如铜）结构体。在结构形成之后，通过多级蚀刻操作去除牺牲材料。在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。多级蚀刻操作可以通过中间后处理活动来分离，它们可以通过清洁操作或阻隔材料去除操作等分开。障碍物可以通过与结构材料或基底接触而固定就位，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留牺牲材料被蚀刻之后可以被自由地去除。

4. 发明申请

US20050199583A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 有权
公开(公告)号：US20050199583A1
公开(公告)日：2005-09-15
申请号：US11029218
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/003 , B33Y10/00 , C23C18/1605 , C23C18/1608 , C23C18/1653 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

5. 发明申请

US20050173374A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 有权
公开(公告)号：US20050173374A1
公开(公告)日：2005-08-11
申请号：US11029014
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23C18/16 , C23F1/00 , C25D5/02 , C25D5/10 , C25D5/34 , H01L21/288 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： B44C1/22 , B33Y10/00 , B81C1/00492 , C03C15/00 , C03C25/68 , C23C18/1605 , C23C18/161 , C23C18/1651 , C23C18/1653 , C23C18/405 , C23F1/00 , C25D1/003 , C25D5/02 , C25D5/10 , H01L21/2885 , H01L21/44 , H01L21/4763 , H01L21/76885
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

6. 发明申请

US20050215046A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 审中-公开
公开(公告)号：US20050215046A1
公开(公告)日：2005-09-29
申请号：US11029215
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/20 , C23C18/1605 , C23C18/1608 , C23C18/165 , C25D1/003 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

7. 发明申请

US20050194258A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 审中-公开
公开(公告)号：US20050194258A1
公开(公告)日：2005-09-08
申请号：US11029179
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/003 , C23C18/1605 , C23C18/1608 , C23C18/165 , C23C18/405 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

8. 发明申请

US20050176238A1 Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates 审中-公开
公开(公告)号：US20050176238A1
公开(公告)日：2005-08-11
申请号：US11029172
申请日：2005-01-03
申请人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
发明人： Adam Cohen , Michael Lockard , Kieun Kim , Qui Le , Gang Zhang , Uri Frodis , Dale McPherson , Dennis Smalley
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C25D5/02 , C25D5/10 , H01L21/44 , H01L21/4763
CPC分类号： C25D1/003 , C23C18/1605 , C23C18/1608 , C23C18/165 , C23C18/405 , C25D5/022 , C25D5/10
摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

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