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31. 发明申请

US20090242793A1 Flexible ion source 有权
标题翻译：柔性离子源
公开(公告)号：US20090242793A1
公开(公告)日：2009-10-01
申请号：US12080028
申请日：2008-03-31
申请人： Russell J. Low , Jay T. Scheuer , Alexander S. Perel , Craig R. Chaney , Neil J. Bassom
发明人： Russell J. Low , Jay T. Scheuer , Alexander S. Perel , Craig R. Chaney , Neil J. Bassom
IPC分类号： H01J27/02
CPC分类号： H01J27/022 , H01J37/04 , H01J37/08 , H01J37/16 , H01J2237/082
摘要： Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
摘要翻译：公开了用于保护离子源壳体的衬垫元件并且还提高了离子源的功率效率。将优选由钨构成的两个衬垫元件插入到离子源室中，一个放置在两个侧壁中的每一个上。这些插入物被电偏置以便引起垂直于所施加的磁场的电场。已经意外地发现这种布置不仅增加了离子室壳体的寿命，而且延长了间接加热的阴极（IHC）和排斥器的使用寿命。此外，使用这些偏置的衬垫元件也提高了离子源的功率效率; 允许在给定功率水平下产生更多的离子，或者在较低功率水平下产生相等数量的离子。

32. 发明申请

US20090078554A1 TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS 失效
标题翻译：制造高压连接的技术
公开(公告)号：US20090078554A1
公开(公告)日：2009-03-26
申请号：US11861796
申请日：2007-09-26
申请人： Douglas E. May , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
发明人： Douglas E. May , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
IPC分类号： H01H17/08
CPC分类号： H01H1/06 , H01H1/385 , H01H3/36 , H01H31/003 , H01H31/026 , H01H35/38
摘要： Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
摘要翻译：公开了用于制造高压连接的技术。在一个特定的示例性实施例中，这些技术可以被实现为电开关。电开关可以包括从第一电触头延伸到第二电触点的部件。该部件还可以包括非导电部分和导电部分。在第一操作模式中，非导电部分的至少一部分可以位于两个电触点之间，以使两个电触头绝缘。在第二操作模式中，导电部分可以位于两个电触头之间，以连接两个电触点。

33. 发明申请

US20090072163A1 TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM 有权
标题翻译：用于控制充电颗粒光束的技术
公开(公告)号：US20090072163A1
公开(公告)日：2009-03-19
申请号：US11854852
申请日：2007-09-13
申请人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
发明人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
IPC分类号： G21K5/04
CPC分类号： H01J37/04 , H01J37/3171 , H01J2237/04735 , H01J2237/04756 , H05H15/00
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速度列。加速柱可以包括具有孔的多个电极，带电粒子束可以通过该孔。带电粒子加速/减速系统还可包括电耦合到多个电极的多个电阻器。带电粒子加速/减速系统还可以包括电耦合到多个电极和多个电阻器的多个开关，多个开关中的每一个可被配置为分别以多种操作模式选择性地切换。

34. 发明授权

US07361913B2 Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control 有权
标题翻译：使用快速离子束控制的固定射束离子注入过程中毛刺恢复的方法和装置
公开(公告)号：US07361913B2
公开(公告)日：2008-04-22
申请号：US11241894
申请日：2005-09-30
申请人： Russell J. Low , Joseph C. Olson , David R. Timberlake , James R. McLane , Mark D. Saunders , James J. Cummings , Thomas B. Callahan , Jonathan England
发明人： Russell J. Low , Joseph C. Olson , David R. Timberlake , James R. McLane , Mark D. Saunders , James J. Cummings , Thomas B. Callahan , Jonathan England
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/31761 , Y10S438/961
摘要： An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.
摘要翻译：离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3）操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

35. 发明授权

US07005657B1 Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery 有权
标题翻译：晶圆扫描离子注入机具有快速光束偏转装置，用于光束毛刺恢复
公开(公告)号：US07005657B1
公开(公告)日：2006-02-28
申请号：US11051018
申请日：2005-02-04
申请人： Russell J. Low , Gordon C. Angel
发明人： Russell J. Low , Gordon C. Angel
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/147 , H01J37/3171 , H01J2237/043 , H01J2237/15 , H01J2237/1501 , H01J2237/20228 , H01J2237/3045 , H01J2237/30472
摘要： An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.
摘要翻译：离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。响应于在第一操作条件下基本为零伏的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引向分辨开口以产生端子离子束部分。当光束偏转电压在第二操作条件下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得末端离子束部分基本上熄灭。光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。

36. 发明授权

US06984831B2 Gas flow restricting cathode system for ion implanter and related method 有权
标题翻译：用于离子注入机的气流限制阴极系统及相关方法
公开(公告)号：US06984831B2
公开(公告)日：2006-01-10
申请号：US10794850
申请日：2004-03-05
申请人： Russell J. Low , Joseph C. Olson , Curt D. Bergeron , Eric R. Cobb , Jeffrey A. Burgess
发明人： Russell J. Low , Joseph C. Olson , Curt D. Bergeron , Eric R. Cobb , Jeffrey A. Burgess
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/061 , H01J2237/06308 , H01J2237/082
摘要： A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.
摘要翻译：一种具有阴极元件的阴极系统，其被配置为延伸穿过离子注入系统的电弧室的壁中的孔。通过限制部件限制通过阴极元件和孔之间的间隔的气流。还提供了一种电离源气体和结合有限制构件的阴极元件的方法。

37. 发明授权

US08000080B2 Particle trap 失效
标题翻译：粒子陷阱
公开(公告)号：US08000080B2
公开(公告)日：2011-08-16
申请号：US12327888
申请日：2008-12-04
申请人： Stephen E. Krause , Russell J. Low , Kasegn D. Tekletsadik
发明人： Stephen E. Krause , Russell J. Low , Kasegn D. Tekletsadik
IPC分类号： H01T23/00 , H01P1/10 , H01H47/00
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/022 , H01J2237/028 , H01J2237/038
摘要： An apparatus and method for trapping particles in a housing is disclosed. A high voltage terminal/structure is situated within a housing. A conductive material, having a plurality of holes, such as a mesh, is disposed a distance away from an interior surface of the housing, such as the floor of the housing, forming a particle trap. The conductive mesh is biased so that the electrical field within the trap is either non-existent or pushing toward the floor, so as to retain particles within the trap. Additionally, a particle mover, such as a fan or mechanical vibration device, can be used to urge particles into the openings in the mesh. Furthermore, a conditioning phase may be used prior to operating the high voltage terminal, whereby a voltage is applied to the conductive mesh so as to attract particles toward the particle trap.
摘要翻译：公开了一种用于将颗粒捕获在壳体中的装置和方法。高压端子/结构位于壳体内。具有诸如网的多个孔的导电材料设置成远离壳体的内表面（例如壳体的地板）一定距离，形成颗粒捕集器。导电网被偏置，使得陷阱内的电场不存在或者朝向地板推动，以便将颗粒保持在陷阱内。此外，诸如风扇或机械振动装置的颗粒移动器可用于将颗粒推入网中的开口中。此外，可以在操作高电压端子之前使用调节阶段，由此将电压施加到导电网，以将颗粒吸引到颗粒捕集器。

38. 发明申请

US20110094862A1 TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS 审中-公开
标题翻译：制造高压连接的技术
公开(公告)号：US20110094862A1
公开(公告)日：2011-04-28
申请号：US12983622
申请日：2011-01-03
申请人： Douglas E. MAY , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
发明人： Douglas E. MAY , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
IPC分类号： H01H1/00 , H01H3/54
CPC分类号： H01H1/06 , H01H1/385 , H01H3/36 , H01H31/003 , H01H31/026 , H01H35/38
摘要： Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
摘要翻译：公开了用于制造高压连接的技术。在一个特定的示例性实施例中，这些技术可以被实现为电开关。电开关可以包括从第一电触头延伸到第二电触点的部件。该部件还可以包括非导电部分和导电部分。在第一操作模式中，非导电部分的至少一部分可以位于两个电触点之间，以使两个电触头绝缘。在第二操作模式中，导电部分可以位于两个电触头之间，以连接两个电触点。

39. 发明申请

US20110094798A1 INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT 有权
标题翻译：在高压环境中连接两个绝缘部件
公开(公告)号：US20110094798A1
公开(公告)日：2011-04-28
申请号：US12983706
申请日：2011-01-03
申请人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R4/00
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
摘要翻译：公开了在高电压环境中部分接口的相关结构的方法。一种方法包括：提供第一部分和第二部分; 以及接合所述第一部分和所述第二部分以在所述第一部分和所述第二部分之间的界面的第一外部范围处形成第一基本为零的电场区域，以及在所述界面的不同部分中的减小的电场区域。

40. 发明申请

US20110056746A1 ELECTRIC FIELD MODIFICATION ABOUT A CONDUCTIVE STRUCTURE 审中-公开
标题翻译：关于导电结构的电场修改
公开(公告)号：US20110056746A1
公开(公告)日：2011-03-10
申请号：US12715735
申请日：2010-03-02
申请人： Kasegn D. Tekletsadik , Russell J. Low
发明人： Kasegn D. Tekletsadik , Russell J. Low
IPC分类号： H02G3/00 , H01B7/00
CPC分类号： H01J37/3171 , H01J37/09 , H01J37/16 , H01J2237/0206 , H01J2237/026 , H01J2237/038 , H01J2237/08
摘要： An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor.
摘要翻译：一种装置包括导电结构和布置在导电结构的外部附近的绝缘导体，以修改围绕导电结构的电场。绝缘导体具有介于绝缘体上的介电强度大于75千伏（kV）/英寸的导体周围。

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