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1. 发明授权

US07863531B2 Techniques for making high voltage connections 失效
标题翻译：高压连接技术
公开(公告)号：US07863531B2
公开(公告)日：2011-01-04
申请号：US11861796
申请日：2007-09-26
申请人： Douglas E. May , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
发明人： Douglas E. May , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
IPC分类号： H01H9/00
CPC分类号： H01H1/06 , H01H1/385 , H01H3/36 , H01H31/003 , H01H31/026 , H01H35/38
摘要： Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
摘要翻译：公开了用于制造高压连接的技术。在一个特定的示例性实施例中，这些技术可以被实现为电开关。电开关可以包括从第一电触头延伸到第二电触点的部件。该部件还可以包括非导电部分和导电部分。在第一操作模式中，非导电部分的至少一部分可以位于两个电触点之间，以使两个电触头绝缘。在第二操作模式中，导电部分可以位于两个电触头之间，以连接两个电触点。

2. 发明申请

US20090078554A1 TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS 失效
标题翻译：制造高压连接的技术
公开(公告)号：US20090078554A1
公开(公告)日：2009-03-26
申请号：US11861796
申请日：2007-09-26
申请人： Douglas E. May , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
发明人： Douglas E. May , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
IPC分类号： H01H17/08
CPC分类号： H01H1/06 , H01H1/385 , H01H3/36 , H01H31/003 , H01H31/026 , H01H35/38
摘要： Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
摘要翻译：公开了用于制造高压连接的技术。在一个特定的示例性实施例中，这些技术可以被实现为电开关。电开关可以包括从第一电触头延伸到第二电触点的部件。该部件还可以包括非导电部分和导电部分。在第一操作模式中，非导电部分的至少一部分可以位于两个电触点之间，以使两个电触头绝缘。在第二操作模式中，导电部分可以位于两个电触头之间，以连接两个电触点。

3. 发明申请

US20110094862A1 TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS 审中-公开
标题翻译：制造高压连接的技术
公开(公告)号：US20110094862A1
公开(公告)日：2011-04-28
申请号：US12983622
申请日：2011-01-03
申请人： Douglas E. MAY , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
发明人： Douglas E. MAY , Kasegn D. Tekletsadik , Eric Hermanson , Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Stephen E. Krause
IPC分类号： H01H1/00 , H01H3/54
CPC分类号： H01H1/06 , H01H1/385 , H01H3/36 , H01H31/003 , H01H31/026 , H01H35/38
摘要： Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
摘要翻译：公开了用于制造高压连接的技术。在一个特定的示例性实施例中，这些技术可以被实现为电开关。电开关可以包括从第一电触头延伸到第二电触点的部件。该部件还可以包括非导电部分和导电部分。在第一操作模式中，非导电部分的至少一部分可以位于两个电触点之间，以使两个电触头绝缘。在第二操作模式中，导电部分可以位于两个电触头之间，以连接两个电触点。

4. 发明申请

US20090057573A1 TECHNIQUES FOR TERMINAL INSULATION IN AN ION IMPLANTER 审中-公开
标题翻译：在离子植入物中终端绝缘的技术
公开(公告)号：US20090057573A1
公开(公告)日：2009-03-05
申请号：US11847139
申请日：2007-08-29
申请人： Russell John LOW , Piotr R. Lubicki , Jeffrey D. Lischer , Steve Krause , Eric Hermanson , Joseph C. Olson , Kasegn D. Tekletsadik
发明人： Russell John LOW , Piotr R. Lubicki , Jeffrey D. Lischer , Steve Krause , Eric Hermanson , Joseph C. Olson , Kasegn D. Tekletsadik
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/09 , H01J37/16 , H01J37/248 , H01J2237/026 , H01J2237/038 , H01J2237/2001
摘要： Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity.
摘要翻译：公开了用于离子注入机的端子绝缘的技术。在一个特定的示例性实施例中，可以将技术实现为包括限定端子腔的端子结构的离子注入机。离子注入机还可以包括限定接地腔的接地外壳，并且端子结构可以至少部分地设置在接地空腔内。离子注入机还可以包括设置在端子结构的外部部分附近并且至少部分地设置在接地腔内的中间端子结构。

5. 发明授权

US07820986B2 Techniques for controlling a charged particle beam 有权
标题翻译：用于控制带电粒子束的技术
公开(公告)号：US07820986B2
公开(公告)日：2010-10-26
申请号：US11854852
申请日：2007-09-13
申请人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
发明人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
IPC分类号： H01J37/317 , H05H5/06
CPC分类号： H01J37/04 , H01J37/3171 , H01J2237/04735 , H01J2237/04756 , H05H15/00
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速度列。加速柱可以包括具有孔的多个电极，带电粒子束可以通过该孔。带电粒子加速/减速系统还可以包括电耦合到多个电极的多个电阻器。带电粒子加速/减速系统还可以包括电耦合到多个电极和多个电阻器的多个开关，多个开关中的每一个可被配置为分别以多种操作模式选择性地切换。

6. 发明申请

US20090072163A1 TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM 有权
标题翻译：用于控制充电颗粒光束的技术
公开(公告)号：US20090072163A1
公开(公告)日：2009-03-19
申请号：US11854852
申请日：2007-09-13
申请人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
发明人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
IPC分类号： G21K5/04
CPC分类号： H01J37/04 , H01J37/3171 , H01J2237/04735 , H01J2237/04756 , H05H15/00
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速度列。加速柱可以包括具有孔的多个电极，带电粒子束可以通过该孔。带电粒子加速/减速系统还可包括电耦合到多个电极的多个电阻器。带电粒子加速/减速系统还可以包括电耦合到多个电极和多个电阻器的多个开关，多个开关中的每一个可被配置为分别以多种操作模式选择性地切换。

7. 发明授权

US07459704B2 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms 有权
标题翻译：用于生产离子簇，离子化分子和离子化单原子的离子源配置
公开(公告)号：US07459704B2
公开(公告)日：2008-12-02
申请号：US11269033
申请日：2005-11-08
申请人： Joseph C. Olson , Anthony Renau , Donna L. Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander S. Perel , Russell J. Low , Peter Kurunczi
发明人： Joseph C. Olson , Anthony Renau , Donna L. Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander S. Perel , Russell J. Low , Peter Kurunczi
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
摘要翻译：提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。在一些实施例中，第一和第二电子源位于电弧室的相对端。第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

8. 发明授权

US08461030B2 Apparatus and method for controllably implanting workpieces 有权
公开(公告)号：US08461030B2
公开(公告)日：2013-06-11
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

9. 发明授权

US07102139B2 Source arc chamber for ion implanter having repeller electrode mounted to external insulator 有权
标题翻译：用于离子注入机的源弧室，其具有安装到外部绝缘体的排斥电极
公开(公告)号：US07102139B2
公开(公告)日：2006-09-05
申请号：US11044659
申请日：2005-01-27
申请人： Russell J. Low , Eric R. Cobb , Joseph C. Olson , Leo V. Klos
发明人： Russell J. Low , Eric R. Cobb , Joseph C. Olson , Leo V. Klos
IPC分类号： H01J7/24
CPC分类号： H01J27/08
摘要： An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.
摘要翻译：离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有包围开口的中心部分。陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。绝缘体内表面可以具有脊状横截面。

10. 发明授权

US07361913B2 Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control 有权
标题翻译：使用快速离子束控制的固定射束离子注入过程中毛刺恢复的方法和装置
公开(公告)号：US07361913B2
公开(公告)日：2008-04-22
申请号：US11241894
申请日：2005-09-30
申请人： Russell J. Low , Joseph C. Olson , David R. Timberlake , James R. McLane , Mark D. Saunders , James J. Cummings , Thomas B. Callahan , Jonathan England
发明人： Russell J. Low , Joseph C. Olson , David R. Timberlake , James R. McLane , Mark D. Saunders , James J. Cummings , Thomas B. Callahan , Jonathan England
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/31761 , Y10S438/961
摘要： An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.
摘要翻译：离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3）操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

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