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    • 33. 发明申请
    • Non-dripping nozzle apparatus
    • 无滴水喷嘴装置
    • US20050133075A1
    • 2005-06-23
    • US10743928
    • 2003-12-22
    • Andrew Nguyen
    • Andrew Nguyen
    • H01L21/00B08B3/00
    • H01L21/6715
    • According to one aspect of the invention, a dispense head for a wafer processing apparatus is provided. The dispense head may include an inlet, at least one outlet, a drain, and a passageway therethrough interconnecting the inlet, the outlet, and the drain. The inlet may be a first height above a bottom of the passageway, the outlet may be a second height above the bottom, and the drain may be a third height above the bottom. A first valve may be connected to the inlet, and a second valve may be connected to the drain. When the first valve is opened and the second valve is closed, fluid flows into the inlet and out of the outlet. When the second valve is opened and the first valve is closed, fluid from the passageway flows out of the drain. A pump may be connected to the drain.
    • 根据本发明的一个方面,提供了一种用于晶片处理装置的分配头。 分配头可以包括入口,至少一个出口,排水口和通过其互连入口,出口和排水口的通道。 入口可以是通道底部上方的第一高度,出口可以是底部上方的第二高度,并且排水口可以是底部上方的第三高度。 第一阀可以连接到入口,并且第二阀可以连接到排水管。 当第一阀打开并且第二阀关闭时,流体流入入口并离开出口。 当第二阀打开并且第一阀关闭时,来自通道的流体流出排水管。 泵可以连接到排水管。
    • 34. 发明授权
    • Inductively coupled parallel-plate plasma reactor with a conical dome
    • 具有锥形圆顶的电感耦合平行板等离子体反应器
    • US06308654B1
    • 2001-10-30
    • US08734015
    • 1996-10-18
    • Gerhard SchneiderViktor ShelAndrew NguyenRobert W. WuGerald Z. Yin
    • Gerhard SchneiderViktor ShelAndrew NguyenRobert W. WuGerald Z. Yin
    • C23C1600
    • H01J37/321
    • A plasma reactor appropriate for fabrication, especially etching, of semiconductor integrated circuits and similar processes in which the chamber has a top comprising a truncated conical dome and, preferably, a counter electrode disposed at the top of the conical dome. An RF coil is wrapped around the conical dome to inductively couple RF energy into a plasma within the chamber dome. The dome temperature can be controlled in a number of ways. A heat sink can be attached to the outside rim of the dome. A rigid conical thermal control sheath can be fit to the outside of the dome, and any differential thermal expansion between the two is accommodated by the conical geometry, thus assuring good thermal contact. The rigid thermal control sheath can include resistive heating, fluid cooling, or both. Alternatively, a flexible resistive heater can be wrapped around the dome inside the RF coil. The resistive heater includes a heater wire wound in a serpentine path that has straight portions overlying and perpendicular to the RF coil but has bends located away from the RF coil. The path prevents the heater wire from shorting the azimuthal electric field induced by the RF coil and also acts as a Faraday shield preventing capacitive coupling from the coil into the chamber plasma.
    • 适用于半导体集成电路的制造,特别是蚀刻的等离子体反应器和类似的工艺,其中腔室具有顶部,该顶部包括截顶圆锥形圆顶,优选地,设置在锥形圆顶顶部的对置电极。 RF线圈围绕圆锥形圆顶包裹以将射频能量感应耦合到腔室内的等离子体中。 圆顶温度可以以多种方式进行控制。 散热器可以连接到圆顶的外边缘。 刚性圆锥形热控制护套可以配合到圆顶的外部,并且两者之间的任何差别的热膨胀由锥形几何形状适应,从而确保良好的热接触。 刚性热控鞘可以包括电阻加热,流体冷却或两者。 或者,柔性电阻加热器可以缠绕在RF线圈内的圆顶周围。 电阻加热器包括缠绕在蛇形路径中的加热线,其具有覆盖并垂直于RF线圈的直线部分,但具有远离RF线圈的弯曲。 该路径防止加热线短路由RF线圈引起的方位电场,并且还用作防止从线圈到室等离子体的电容耦合的法拉第屏蔽。
    • 40. 发明授权
    • Substrate support with symmetrical feed structure
    • 具有对称进料结构的基板支撑
    • US09123762B2
    • 2015-09-01
    • US12910547
    • 2010-10-22
    • Xing LinDouglas A. Buchberger, Jr.Xiaoping ZhouAndrew NguyenAnchel Sheyner
    • Xing LinDouglas A. Buchberger, Jr.Xiaoping ZhouAndrew NguyenAnchel Sheyner
    • C23C16/00C23F1/00H01L21/306H01L21/683H01J37/32H01L21/67
    • H01L21/67069H01J37/32532H01J37/32577H01J37/32715H01J37/32724H01L21/6831
    • Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
    • 本文公开了用于处理衬底的装置。 在一些实施例中,衬底支撑件可以包括具有用于支撑衬底的支撑表面的衬底支撑件,衬底支撑件具有中心轴线; 设置在所述基板支撑件内的第一电极,用于当设置在所述支撑表面上时向基板提供RF功率; 内部导体,其围绕第一电极的与支撑表面相对的表面的中心耦合到第一电极,其中内部导体是管状的,并且从第一电极沿着远离支撑表面的方向平行于中心轴并围绕中心轴线延伸 的基板支撑; 设置在内部导体周围的外部导体; 以及设置在所述内部和外部导体之间的外部电介质层,所述外部电介质层将所述外部导体与所述内部导体电隔离。 外部导体可以耦合到电气接地。