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1. 发明授权

US10408849B2 Method of determining consumption of decayed drug through drug taggants 有权
公开(公告)号：US10408849B2
公开(公告)日：2019-09-10
申请号：US15494089
申请日：2017-04-21
申请人： David R. Hall , Dan Allen , Conrad Rosenbrock , Daniel Hendricks , Andrew Nguyen , Steven J. M. Butala , Travis Niederhauser , Terrece Pearman , Joe Fox
发明人： David R. Hall , Dan Allen , Conrad Rosenbrock , Daniel Hendricks , Andrew Nguyen , Steven J. M. Butala , Travis Niederhauser , Terrece Pearman , Joe Fox
IPC分类号： G01N33/94 , G01N33/493 , G01N33/58 , G01N33/15 , G01N21/88 , A61B10/00 , A61B5/15
摘要： We disclose a method of using taggants to assess how and to what extent a drug in a drug composition that a user has consumed has decayed in response to storage conditions and time. The taggants may decay in response to environmental conditions which cause different drugs to lose their efficacy. These environmental conditions may include light, temperature, oxidation, and age. The taggants may be detected in biological samples, including urine and feces. By identifying the taggants, the drug composition and other information relating to the drug may be identified. Additionally, quantification of the different taggants may be used to determine whether the drug in the drug composition has been exposed to environmental conditions which may reduce its efficacy.

2. 发明申请

US20170232781A1 DEVICE FOR JOINING TWO WRITING INSTRUMENTS 审中-公开
公开(公告)号：US20170232781A1
公开(公告)日：2017-08-17
申请号：US15041680
申请日：2016-02-11
申请人： Andrew Nguyen
发明人： Andrew Nguyen
IPC分类号： B43K23/06 , F16B2/22
CPC分类号： B43K23/06 , F16B2/22
摘要： This invention provides a device for removably connecting two different styles of writing instruments, such as pens with different colored inks or different size nibs, pencils, markers, or crayons.

3. 发明申请

US20160367860A1 SWIMMING AID DEVICE 审中-公开
标题翻译：游泳设备
公开(公告)号：US20160367860A1
公开(公告)日：2016-12-22
申请号：US15257848
申请日：2016-09-06
申请人： Andrew Nguyen
发明人： Andrew Nguyen
IPC分类号： A63B31/11
CPC分类号： A63B31/11 , A63B2209/00 , A63B2210/50
摘要： A swimming aid device in the form of a monofi is contemplated. The swimming aid device may include first and second fins formed of a resilient material, each fin including an elongated internal space within a fin body, an opening leading to the elongated internal space, a fin blade coupled to and extending away from the elongated internal space, a first and second side heel connectors on opposing sides of the opening leading to the elongated internal space and sized and shaped to mate with each other, a fin blade connector and a fin blade connector receiver on the fin blade and sized and shaped to mate with each other, the combination of the first and second fins forming a monofin.
摘要翻译：考虑到单体形式的游泳辅助装置。游泳辅助装置可以包括由弹性材料形成的第一和第二鳍片，每个翼片包括翅片体内的细长内部空间，通向细长内部空间的开口，联接到并延伸远离细长内部空间的翅片叶片，在所述开口的相对侧上的通向所述细长内部空间的第一和第二侧跟部连接器，其尺寸和形状相互配合，翅片叶片连接器和鳍片连接器接收器，其尺寸和形状适于配合彼此之间形成单峰的第一和第二鳍片的组合。

4. 发明授权

US09267742B2 Apparatus for controlling the temperature uniformity of a substrate 有权
标题翻译：用于控制基板的温度均匀性的装置
公开(公告)号：US09267742B2
公开(公告)日：2016-02-23
申请号：US12886255
申请日：2010-09-20
申请人： Kallol Bera , Xiaoping Zhou , Douglas A. Buchberger, Jr. , Andrew Nguyen , Hamid Tavassoli , Surajit Kumar , Shahid Rauf
发明人： Kallol Bera , Xiaoping Zhou , Douglas A. Buchberger, Jr. , Andrew Nguyen , Hamid Tavassoli , Surajit Kumar , Shahid Rauf
IPC分类号： F25B29/00 , F28F3/12 , F28F13/00
CPC分类号： F28F3/12 , F28F2013/001
摘要： Apparatus for controlling the thermal uniformity of a substrate. In some embodiments, the thermal uniformity of the substrate is controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate is controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate includes a substrate support having a support surface to support a substrate thereon. A plurality of flow paths having a substantially equivalent fluid conductance are disposed within the substrate support to flow a heat transfer fluid beneath the support surface.
摘要翻译：用于控制基板的热均匀性的装置。在一些实施例中，将基板的热均匀性控制得更均匀。在一些实施例中，基板的热均匀性被控制为以期望的图案不均匀。在一些实施例中，用于控制衬底的热均匀性的装置包括具有用于在其上支撑衬底的支撑表面的衬底支撑件。具有基本相当的流体电导的多个流动路径设置在基板支撑件内，以使传热流体在支撑表面下方流动。

5. 发明申请

US20140202267A1 METHODS OF ATTACHING A MODULE ON WAFER SUBSTRATE 有权
标题翻译：连接晶片上的模块的方法
公开(公告)号：US20140202267A1
公开(公告)日：2014-07-24
申请号：US13797112
申请日：2013-03-12
申请人： Vaibhaw Vishal , Andrew Nguyen , Kristopher K. Hearn , Mei Sun
发明人： Vaibhaw Vishal , Andrew Nguyen , Kristopher K. Hearn , Mei Sun
IPC分类号： H05K7/00
CPC分类号： H01L21/67248 , Y10T29/53
摘要： Aspects of the present disclosure describe an attachment device for mounting a module to a substrate comprises a module leg with two ends and a module foot. One end of the module leg is configured to be attached to a bottom surface of the module and the other end of the module leg is configured to be attached to the module foot. At least a portion of the module foot is configured to be attached to the substrate. Also a portion of a surface area of the module foot is configured to be exposed outside of an area covered by the module. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：本公开的方面描述了用于将模块安装到基板的附接装置，包括具有两端的模块腿和模块脚。模块腿的一端构造成附接到模块的底表面，并且模块腿的另一端构造成附接到模块脚。模块脚的至少一部分被配置成附接到基底。模块脚的表面区域的一部分也被配置为暴露在由模块覆盖的区域的外部。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

6. 发明授权

US08633423B2 Methods and apparatus for controlling substrate temperature in a process chamber 有权
标题翻译：用于控制处理室中的衬底温度的方法和装置
公开(公告)号：US08633423B2
公开(公告)日：2014-01-21
申请号：US13097822
申请日：2011-04-29
申请人： Xing Lin , Douglas A. Buchberger, Jr. , Xiaoping Zhou , Valentin Todorow , Andrew Nguyen , Anchel Sheyner
发明人： Xing Lin , Douglas A. Buchberger, Jr. , Xiaoping Zhou , Valentin Todorow , Andrew Nguyen , Anchel Sheyner
IPC分类号： H05B1/00 , H01L21/683
CPC分类号： H05B6/105 , H01L21/67109 , H01L21/6831
摘要： Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.
摘要翻译：本文提供了在处理期间控制基板的温度的方法和装置。在一些实施例中，用于保持和控制衬底温度的装置可以包括电介质材料的圆盘; 设置在靠近所述圆盘的表面的所述圆盘中的电极，待保持基板的电极; 以及多个加热器元件，其布置在圆盘中并且布置成同心环以提供独立的温度控制区。

7. 发明授权

US08440019B2 Lower liner with integrated flow equalizer and improved conductance 有权
标题翻译：下层衬套具有集成流量均衡器和改进的电导率
公开(公告)号：US08440019B2
公开(公告)日：2013-05-14
申请号：US13607425
申请日：2012-09-07
申请人： James D. Carducci , Andrew Nguyen , Ajit Balakrishna , Michael C. Kutney
发明人： James D. Carducci , Andrew Nguyen , Ajit Balakrishna , Michael C. Kutney
IPC分类号： C23C16/455 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
摘要翻译：等离子体处理室具有具有集成流量均衡器的下衬套。在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

8. 发明授权

US08076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes 失效
标题翻译：通过控制相对电极之间的RF相位，晶片上的等离子体工艺均匀性
公开(公告)号：US08076247B2
公开(公告)日：2011-12-13
申请号：US11733770
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要翻译：提供了一种用于在等离子体反应器室中处理工件的方法。该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。该方法还包括提供边缘接地返回路径。该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

9. 发明授权

US08075728B2 Gas flow equalizer plate suitable for use in a substrate process chamber 失效
标题翻译：气流平衡板，适用于衬底加工室
公开(公告)号：US08075728B2
公开(公告)日：2011-12-13
申请号：US12038887
申请日：2008-02-28
申请人： Ajit Balakrishna , Shahid Rauf , Andrew Nguyen , Michael D. Willwerth , Valentin N. Todorow
发明人： Ajit Balakrishna , Shahid Rauf , Andrew Nguyen , Michael D. Willwerth , Valentin N. Todorow
IPC分类号： C23F1/00 , H01L21/306 , C23C16/455 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
摘要翻译：提供流量均衡器板用于衬底处理室。流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

10. 发明授权

US08058156B2 Plasma immersion ion implantation reactor having multiple ion shower grids 有权
标题翻译：具有多个离子淋浴网格的等离子体浸没离子注入反应器
公开(公告)号：US08058156B2
公开(公告)日：2011-11-15
申请号：US10895784
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32357 , C23C14/046 , C23C14/48 , C23C16/045 , H01J37/32412
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, the plural orifices oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the closest one of the plural ion shower grids, and furnishing the selected species into the ion generation region. The process further includes evacuating the process region, and applying plasma source power to generate a plasma of the selected species in the ion generation region. The process also includes applying successive grid potentials to successive ones of the grids and applying a bias potential to the workpiece. The combination of the grid and bias potentials corresponds to the desired ion implantation depth profile in the workpiece.
摘要翻译：在具有一组多个并联离子淋浴网格的反应室中进行用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入方法，该多个平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴栅格具有从栅格到栅格相互配准的多个孔，多个孔相对于各个离子喷淋栅格的表面平行于非平行方向。该工艺包括将工件放置在工艺区域中，工件具有大致面对多个离子淋浴栅格中最接近的一个的表面的工件表面，并将所选择的物质提供到离子产生区域中。该方法还包括抽空处理区域，以及施加等离子体源功率以在离子产生区域中产生所选物种的等离子体。该过程还包括将连续的栅格电势施加到连续的栅格并向工件施加偏置电位。栅格和偏置电位的组合对应于工件中期望的离子注入深度分布。

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