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31. 发明授权

US07097884B2 Stability of ion beam generated alignment layers by surface modification 失效
公开(公告)号：US07097884B2
公开(公告)日：2006-08-29
申请号：US10606523
申请日：2003-06-26
申请人： Alessandro C. Callegari , Praveen Chaudhari , Fuad E. Doany , James P. Doyle , Eileen A. Galligan , James H. Glownia , Gareth G. Hougham , James A. Lacey , Shui-Chih Lien , Minhua Lu , Alan E. Rosenbluth , Kei-Hsiung Yang
发明人： Alessandro C. Callegari , Praveen Chaudhari , Fuad E. Doany , James P. Doyle , Eileen A. Galligan , James H. Glownia , Gareth G. Hougham , James A. Lacey , Shui-Chih Lien , Minhua Lu , Alan E. Rosenbluth , Kei-Hsiung Yang
IPC分类号： C23C14/02 , C23C14/14 , C23C14/48 , C23C14/58 , G02F1/1337
CPC分类号： G02F1/13378
摘要： A method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Another method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.

32. 发明授权

US4317043A Normal incidence x-ray reflectors and resonant cavities for supporting laser action using the same 失效
标题翻译：用于支持激光作用的正常入射x射线反射器和谐振腔
公开(公告)号：US4317043A
公开(公告)日：1982-02-23
申请号：US88699
申请日：1979-10-26
申请人： Alan E. Rosenbluth , James M. Forsyth
发明人： Alan E. Rosenbluth , James M. Forsyth
IPC分类号： G21K1/06 , H01S4/00 , H05G1/02
CPC分类号： B82Y10/00 , G21K1/062 , H01S4/00 , G21K2201/061 , G21K2201/067
摘要： Mirror structures are described which provide high normal incidence reflectivities at x-ray wavelengths (such as soft x-ray wavelengths in the range 70 A to 300 A) where conventional metallic reflectors can not function. The mirror is made up of an array of repeated periods each consisting of monoatomic metallic layers and Langmuir-Blodgett hydrocarbon molecular layers. The mirror may also include additional Langmuir-Blodgett bilayers serving as spacer layers and/or additional reflection-enhancing metal films. The various layers are systematically deposited in such a way that, first, the mirror structures are periodic, and second, that the average separation between metallic layers maximizes the reflectance at the design wavelength. Such mirror structures can be configured to define a resonant cavity to support x-ray laser action.
摘要翻译：描述了在常规金属反射器不能起作用的x射线波长（例如，在70A至300A范围内的软x射线波长）中提供高法向入射反射率的镜面结构。镜子由反复周期的阵列组成，每一组由单原子金属层和Langmuir-Blodgett烃分子层组成。镜子还可以包括用作隔离层的另外的Langmuir-Blodgett双层和/或附加的反射增强金属膜。以这样的方式系统地沉积各种层，首先，镜面结构是周期性的，其次，金属层之间的平均间隔使设计波长处的反射率最大化。这种镜结构可以被配置为限定谐振腔以支持x射线激光作用。

33. 发明授权

US08719735B2 Optimizing lithographic mask for manufacturability in efficient manner 失效
标题翻译：以有效的方式优化光刻面具的可制造性
公开(公告)号：US08719735B2
公开(公告)日：2014-05-06
申请号：US13183070
申请日：2011-07-14
申请人： Masaharu Sakamoto , Alan E. Rosenbluth , Marc Alan Szeto-Millstone , Tadanobu Inoue , Kehan Tian , Andreas Waechter , Jonathan Lee , David Osmond Melville
发明人： Masaharu Sakamoto , Alan E. Rosenbluth , Marc Alan Szeto-Millstone , Tadanobu Inoue , Kehan Tian , Andreas Waechter , Jonathan Lee , David Osmond Melville
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F2217/12 , Y02P90/265
摘要： Mask layout data of a lithographic mask includes polygons that each include horizontal and vertical edges. Each of a number of target edge pairs is defined by two edges of one or more of the polygons. A search box having a boundary coincident with a given edge of the edges of the polygons is specified. Whether the search box includes at least one edge of the edges of the polygons in addition to the given edge is determined. Where the search box includes at least one edge, at least one of the target edge pairs is specified as including the given edge and one of the at least one edge. For each target edge pair that has been specified, a manufacturability penalty value is determined. A dynamic manufacturability constraint table and a non-zero multiplier table are maintained.
摘要翻译：光刻掩模的掩模布局数据包括各自包括水平和垂直边缘的多边形。多个目标边对中的每一个由一个或多个多边形的两个边界定义。指定具有与多边形的边缘的给定边缘重合的边界的搜索框。确定搜索框是否包括除了给定边缘之外的多边形的边缘的至少一个边缘。在搜索框包括至少一个边缘的情况下，目标边缘对中的至少一个被指定为包括给定边缘和至少一个边缘中的一个边缘。对于已经指定的每个目标边对，确定可制造性惩罚值。维持动态可制造性约束表和非零乘数表。

34. 发明授权

US08453076B2 Wavefront engineering of mask data for semiconductor device design 有权
标题翻译：用于半导体器件设计的掩模数据的波前工程
公开(公告)号：US08453076B2
公开(公告)日：2013-05-28
申请号：US12725287
申请日：2010-03-16
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/70 , G03F7/705
摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.
摘要翻译：半导体器件设计的光波数据分为几个区域。对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。基于第一波前工程的结果对每个区域的光波数据进行归一化。至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。

35. 发明申请

US20130071774A1 SYSTEM AND METHOD FOR PROJECTION LITHOGRAPHY WITH IMMERSED IMAGE-ALIGNED DIFFRACTIVE ELEMENT 失效
标题翻译：投影图像的系统和方法与映射图像对齐的差分元素
公开(公告)号：US20130071774A1
公开(公告)日：2013-03-21
申请号：US13618821
申请日：2012-09-14
申请人： Dario Gil , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Dario Gil , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G03H1/02
CPC分类号： G03H1/02 , G03F7/70466 , G03H1/0244 , G03H1/0402 , G03H1/08 , G03H2001/0094 , G03H2001/2615 , G03H2222/47 , G03H2240/56
摘要： A novel system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. A further method is described for designing lithographic masks to fabricate the hologram and to project the illuminating wavefront. In other embodiments, a simple personalization based on Talbot fringes and plasmonic interference is performed.
摘要翻译：一种新颖的系统和方法以及计算机程序产品，用于将光致抗蚀剂膜以比分辨率更高的图案曝光在物理上可投影到以相同波长形成的普通图像中的胶片上。首先在光致抗蚀剂膜上方形成包含一组可分辨空间频率的全息图结构。包含第二组可分辨空间频率的照明波前通过全息图投射，形成一组新的曝光光致抗蚀剂的透射空间频率。所发送的空间频率包括比存在于全息图或照明波前的频率更高的和频，增加曝光图案的分辨率。描述了用于设计光刻掩模以制造全息图并投影照明波前的另一种方法。在其他实施例中，执行基于Talbot条纹和等离子体激元干扰的简单个性化。

36. 发明授权

US08372565B2 Method for optimizing source and mask to control line width roughness and image log slope 有权
标题翻译：优化源和掩码以控制线宽粗糙度和图像对数斜率的方法
公开(公告)号：US08372565B2
公开(公告)日：2013-02-12
申请号：US12872312
申请日：2010-08-31
申请人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
发明人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
IPC分类号： G03F9/00
CPC分类号： G03F1/70 , G03F7/70433
摘要： A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.
摘要翻译：一种用源照射掩模的方法，用于通过光刻系统将期望的图像图案投影到光活性材料上，包括：限定掩模的表示; 获得分数抗蚀散射噪声（FRSN）参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。

37. 发明申请

US20120210281A1 FRACTURING CONTINUOUS PHOTOLITHOGRAPHY MASKS 有权
公开(公告)号：US20120210281A1
公开(公告)日：2012-08-16
申请号：US13453262
申请日：2012-04-23
申请人： YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.

38. 发明申请

US20120052418A1 METHOD FOR OPTIMIZING SOURCE AND MASK TO CONTROL LINE WIDTH ROUGHNESS AND IMAGE LOG SLOPE 有权
标题翻译：用于优化源和掩码以控制线宽度粗糙度和图像日志斜率的方法
公开(公告)号：US20120052418A1
公开(公告)日：2012-03-01
申请号：US12872312
申请日：2010-08-31
申请人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
发明人： Kehan Tian , Alan E. Rosenbluth , David O. Melville , Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai
IPC分类号： G03F1/00 , G06F17/50 , G03F7/20
CPC分类号： G03F1/70 , G03F7/70433
摘要： A method for illuminating a mask with a source to project a desired image pattern through a lithographic system onto a photoactive material including: defining a representation of the mask; obtaining a fractional resist shot noise (FRSN) parameter; determining a first relationship between a first set of optical intensity values and an edge roughness metric based on the FRSN parameter; determining a second relationship between a second set of optical intensity values and a lithographic performance metric; imposing a set of metric constraints based on one of the first and second relationships; setting up an objective function of optimization based on the remaining of the two relationships; determining optimum constrained values of the representation of the mask based on the set of metric constraints and the objective function; and outputting these values.
摘要翻译：一种用源照射掩模的方法，用于通过光刻系统将期望的图像图案投影到光活性材料上，包括：限定掩模的表示; 获得分数抗蚀散射噪声（FRSN）参数; 基于所述FRSN参数确定第一组光强度值与边缘粗糙度度量之间的第一关系; 确定第二组光强度值和光刻性能度量之间的第二关系; 基于所述第一和第二关系之一施加一组度量约束; 基于剩余的两个关系建立优化的目标函数; 基于所述度量约束和所述目标函数的集合来确定所述掩码的表示的最佳约束值; 并输出这些值。

39. 发明申请

US20120017194A1 METHOD FOR FAST ESTIMATION OF LITHOGRAPHIC BINDING PATTERNS IN AN INTEGRATED CIRCUIT LAYOUT 有权
标题翻译：用于快速估计集成电路布局中的平面结合图案的方法
公开(公告)号：US20120017194A1
公开(公告)日：2012-01-19
申请号：US12835891
申请日：2010-07-14
申请人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F9/455 , G06F17/50
CPC分类号： G03F1/70 , G06F17/5081
摘要： The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate θi spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate θi, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate θi, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
摘要翻译：本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着角坐标系的衍射级的难以打印能量与易于打印能量的比率; i空间频率空间，包括沿着所述角坐标和所述衍射级的能量熵的能量熵因子; i，包括所述衍射级沿着所述角坐标和所述角度的所述衍射级的相位熵的相位熵因子; i，以及包括所述总体能量熵的总能量熵因子衍射指令。难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括位于r = 0的邻域和r = 1附近的归一化的径向坐标r的中间值处的衍射级的能量。光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。光刻难度度可用于设计具有良好的，相对易于打印的特性的集成电路。

40. 发明申请

US20120008134A1 METHOD TO MATCH EXPOSURE TOOLS USING A PROGRAMMABLE ILLUMINATOR 失效
标题翻译：使用可编程照明器匹配曝光工具的方法
公开(公告)号：US20120008134A1
公开(公告)日：2012-01-12
申请号：US12834379
申请日：2010-07-12
申请人： Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Jaione Tirapu Azpiroz , Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G01N21/00
CPC分类号： G03F1/36 , G03F7/70116 , G03F7/70125 , G03F7/70525
摘要： Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.
摘要翻译：使用曝光工具中的可编程照明器来增加刀具匹配的自由度。提供了一种工具匹配方法，其利用基于用户特定约束的线性规划（LP）问题对各个源像素强度的精细调整，以最小化两种工具之间的平版印刷晶片数据的差异。光刻数据可以是来自多个目标和多个工艺条件的关键尺寸差异。该LP问题可以修改为包括使用多次扫描曝光来匹配源的二进制变量。该方法可以应用于参考工具是物理工具或虚拟理想工具的场景。此外，该方法可以匹配不同的光刻系统，每个包括工具和掩模。

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