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31. 发明授权

US06147360A Superconducting device and a method of manufacturing the same 失效
标题翻译：超导装置及其制造方法
公开(公告)号：US06147360A
公开(公告)日：2000-11-14
申请号：US82761
申请日：1998-05-21
申请人： Akihiro Odagawa , Hideaki Adachi , Kentaro Setsune
发明人： Akihiro Odagawa , Hideaki Adachi , Kentaro Setsune
IPC分类号： H01L39/22 , H01L29/06
CPC分类号： H01L39/225
摘要： This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part in between.
摘要翻译：本发明提供一种能够在基板上的任意位置再现的具有良好特性的超导装置及其制造方法。在作为栅电极的基板上设置有取向金属的凸区域（经处理的线状的铂薄膜）。然后，在凸区域上沉积氧化物绝缘膜（SrTiO 3薄膜），再在氧化物绝缘膜上沉积YBa2Cu3O7氧化物超导薄膜。因此，在凸部形成有晶界部。漏极电极和源极电极彼此面对地形成，晶界部分在其间。

32. 发明授权

US07446391B2 Electro-resistance element and method of manufacturing the same 有权
标题翻译：电阻元件及其制造方法
公开(公告)号：US07446391B2
公开(公告)日：2008-11-04
申请号：US11326520
申请日：2006-01-06
申请人： Akihiro Odagawa , Yasunari Sugita , Tsutomu Kanno , Akihiro Sakai , Hideaki Adachi
发明人： Akihiro Odagawa , Yasunari Sugita , Tsutomu Kanno , Akihiro Sakai , Hideaki Adachi
IPC分类号： H01L21/20
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/004 , G11C2013/0054 , G11C2213/31 , G11C2213/71 , G11C2213/79 , H01L27/105 , H01L27/1052 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： An electro-resistance element that has a different configuration from conventional elements and shows outstanding resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes: a multilayer structure including an upper electrode, a lower electrode, and an electro-resistance layer sandwiched by the electrodes, the multilayer structure disposed on a substrate; wherein the electro-resistance layer has a spinel structure, and a surface of the lower electrode that faces the electro-resistance layer is oxidized. The electro-resistance element can be manufactured by a manufacturing process at 400° C. or lower.
摘要翻译：提供了具有与常规元件不同的构造并且显示出优异的电阻变化特性的电阻元件。电阻元件具有两个或多个电阻值不同的状态，并且可以通过施加预定的电压或电流从两个或更多个状态之一切换到另一个状态。电阻元件包括：多层结构，其包括上电极，下电极和夹在电极之间的电阻层，所述多层结构设置在基板上; 其中所述电阻层具有尖晶石结构，并且所述下电极的面向所述电阻层的表面被氧化。电阻元件可以通过在400℃以下的制造工艺制造。

33. 发明申请

US20060050549A1 Electro-resistance element and electro-resistance memory using the same 审中-公开
标题翻译：电阻元件和使用其的电阻存储器
公开(公告)号：US20060050549A1
公开(公告)日：2006-03-09
申请号：US11267198
申请日：2005-11-07
申请人： Hideaki Adachi , Yasunari Sugita , Akihiro Odagawa
发明人： Hideaki Adachi , Yasunari Sugita , Akihiro Odagawa
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要： A electro-resistance element with good heat treatment stability under a hydrogen-containing atmosphere and a electro-resistance memory with good resistance change characteristics and productivity are provided. The electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the states selected from the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes a pair of electrodes, and an oxide semiconductor layer sandwiched by the pair of electrodes and having a perovskite structure, and the conductivity type of the oxide semiconductor layer is n-type. The electro-resistance memory is provided with the electro-resistance element.
摘要翻译：提供了在含氢气氛下具有良好的热处理稳定性的电阻元件和具有良好的电阻变化特性和生产率的电阻记忆体。电阻元件具有电阻值不同的两个以上的状态，并且可以通过施加预定的电压或电流从从两个或更多个状态中选择的状态中的一个切换到另一状态。电阻元件包括一对电极和由一对电极夹持并具有钙钛矿结构的氧化物半导体层，氧化物半导体层的导电类型为n型。电阻存储器设置有电阻元件。

34. 发明授权

US07167387B2 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US07167387B2
公开(公告)日：2007-01-23
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

35. 发明授权

US07473612B2 Method for fabricating a variable-resistance element including heating a RMCoO3 perovskite structure in an oxygen atmosphere 有权
标题翻译：制造可变电阻元件的方法，包括在氧气氛中加热RMCoO3钙钛矿结构
公开(公告)号：US07473612B2
公开(公告)日：2009-01-06
申请号：US11417200
申请日：2006-05-04
申请人： Tsutomu Kanno , Akihiro Odagawa , Yasunari Sugita , Akihiro Sakai , Hideaki Adachi
发明人： Tsutomu Kanno , Akihiro Odagawa , Yasunari Sugita , Akihiro Sakai , Hideaki Adachi
IPC分类号： H01L21/20
CPC分类号： G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2213/31 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1641 , H01L45/1675 , H01L45/1683
摘要： A method for fabricating a variable-resistance element, the resistance of a material layer being variable in accordance with an electric current or voltage applied across first and second electrodes, the method including: (1) a first electrode production step; (2) a step of forming the material layer on the first electrode, wherein the material layer comprises an oxide semiconductor having a perovskite structure represented by the chemical formula RMCoO3, wherein R is a rare-earth element and M is an alkaline-earth element; (3) an oxygen treatment step of heating the material layer in an oxygen atmosphere; (4) a step of forming the second electrode on the material layer that was subjected to the oxygen treatment step; and (5) a hydrogen treatment step of heating the material layer in a reducing atmosphere containing hydrogen.
摘要翻译：一种用于制造可变电阻元件的方法，所述材料层的电阻根据施加在第一和第二电极上的电流或电压而变化，所述方法包括：（1）第一电极制备步骤; （2）在第一电极上形成材料层的步骤，其中所述材料层包括具有由化学式RMCoO 3表示的钙钛矿结构的氧化物半导体，其中R是稀土元素，M是碱土元素 ; （3）在氧气氛中加热材料层的氧处理工序; （4）在进行氧处理工序的材料层上形成第2电极的工序; 和（5）在含氢还原气氛中加热该材料层的氢处理步骤。

36. 发明授权

US07312392B2 Thermoelectric conversion device, and cooling method and power generating method using the device 有权
标题翻译：热电转换装置，以及使用该装置的冷却方法和发电方法
公开(公告)号：US07312392B2
公开(公告)日：2007-12-25
申请号：US11194685
申请日：2005-08-02
申请人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
发明人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
IPC分类号： H01L35/22
CPC分类号： H01L35/34 , H01L35/22
摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.
摘要翻译：本发明提供一种具有高热电转换性能的热电转换装置。在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。

37. 发明申请

US20070102034A1 Thermoelectric conversion device, and cooling method and power generation method using the same 有权
标题翻译：热电转换装置，以及使用其的冷却方法和发电方法
公开(公告)号：US20070102034A1
公开(公告)日：2007-05-10
申请号：US11643708
申请日：2006-12-22
申请人： Tsutomu Kanno , Akihiro Sakai , Akihiro Odagawa , Satoshi Okada , Hideaki Adachi
发明人： Tsutomu Kanno , Akihiro Sakai , Akihiro Odagawa , Satoshi Okada , Hideaki Adachi
IPC分类号： H01L35/28 , H01L35/30 , H01L35/12
CPC分类号： H01L35/22 , C01G51/006 , C01G51/66 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/78 , C01P2004/41 , C01P2004/62 , C01P2006/40
摘要： A thermoelectric conversion device of the present invention includes a first electrode, a second electrode, and a layered oxide arranged between the first electrode and the second electrode. The first electrode, the layered oxide, and the second electrode are arranged in this order so that a multilayer is formed. The layered oxide is formed of electric conductive layers and electric insulating layers being alternately arranged. The C axis of the layered oxide is perpendicular to the interface between the first electrode and the layered oxide. The area of the second electrode is smaller than that of the first electrode.
摘要翻译：本发明的热电转换装置包括第一电极，第二电极和布置在第一电极和第二电极之间的层状氧化物。第一电极，层状氧化物和第二电极按此顺序排列，从而形成多层。层状氧化物由导电层和交替布置的电绝缘层形成。层状氧化物的C轴垂直于第一电极和层状氧化物之间的界面。第二电极的面积小于第一电极的面积。

38. 发明申请

US20050167699A1 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US20050167699A1
公开(公告)日：2005-08-04
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/56 , G11C13/00 , H01L21/02 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

39. 发明授权

US5885937A Superconducting tunnel junction element and superconducting device 失效
标题翻译：超导隧道结元件和超导装置
公开(公告)号：US5885937A
公开(公告)日：1999-03-23
申请号：US888657
申请日：1997-07-07
申请人： Hideaki Adachi , Masahiro Sakai , Akihiro Odagawa , Kentaro Setsune
发明人： Hideaki Adachi , Masahiro Sakai , Akihiro Odagawa , Kentaro Setsune
IPC分类号： H01L39/22
CPC分类号： H01L39/225
摘要： This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi.sub.2 Sr.sub.2 (Ca.sub.0.6 Y.sub.0.4)Cu.sub.2 O.sub.8, Bi.sub.2 Sr.sub.2 Cu.sub.2 O.sub.6 and Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 as the barrier layer between the superconducting oxide electrodes. The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr.sub.2 Cu.sub.2.7 Re.sub.0.3 O.sub.7, Sr.sub.2 CaCu.sub.2 O.sub.6 and (La.sub.0.9 Sr.sub.0.1).sub.2 CuO.sub.4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. When using the superconducting oxides including Ba such as YBa.sub.2 Cu.sub.3 O.sub.7 for the electrode, forming a thin film between the electrode and the barrier is better to prevent Ba from reacting with Bi in the barrier layer. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.
摘要翻译：本发明提供了一种显示令人满意的约瑟夫逊效应的超导隧道结元件。元素包括Bi基层状化合物如Bi2Sr2（Ca0.6Y0.4）Cu2O8，Bi2Sr2Cu2O6和Bi2Sr2CaCu2O8作为超导氧化物电极之间的阻挡层。超导氧化物与Bi基化合物的结构匹配应该是好的。使用一些种类的Cu基超导氧化物如YSr2Cu2.7Re0.3O7，Sr2CaCu2O6和（La0.9Sr0.1）2CuO4用于电极以获得可在高温下工作的约瑟夫逊元素。当将包括诸如YBa2Cu3O7的Ba的超导氧化物用于电极时，在电极和势垒之间形成薄膜更好地防止Ba与阻挡层中的Bi反应。包括该元件的超导装置具有各种用途，例如磁检测使用，通信使用和计算使用。

40. 发明申请

US20080258690A1 Thermal switching element and method for manufacturing the same 审中-公开
标题翻译：热开关元件及其制造方法
公开(公告)号：US20080258690A1
公开(公告)日：2008-10-23
申请号：US12157954
申请日：2008-06-13
申请人： Akihiro Odagawa , Yasunari Sugita , Hideaki Adachi , Masahiro Deguchi
发明人： Akihiro Odagawa , Yasunari Sugita , Hideaki Adachi , Masahiro Deguchi
IPC分类号： H02J7/04 , H01L21/332
CPC分类号： H01L37/00 , F25B2321/003 , F25B2400/15
摘要： The present invention provides a thermal switching element that has a quite different configuration from that of a conventional technique and can control heat transfer by the application of energy, and a method for manufacturing the thermal switching element. The thermal switching element includes a first electrode, a second electrode, and a transition body arranged between the first electrode and the second electrode. The transition body includes a material that causes an electronic phase transition by application of energy. The thermal conductivity between the first electrode and the second electrode is changed by the application of energy to the transition body.
摘要翻译：本发明提供一种具有与常规技术相当不同的构造并且可以通过施加能量来控制热传递的热开关元件，以及用于制造热开关元件的方法。热开关元件包括第一电极，第二电极和布置在第一电极和第二电极之间的过渡体。过渡体包括通过施加能量引起电子相变的材料。第一电极和第二电极之间的热导率通过向能量转移体施加能量来改变。

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