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1. 发明申请

US20060021646A1 Thermoelectric conversion device, and cooling method and power generating method using the device 有权
标题翻译：热电转换装置，以及使用该装置的冷却方法和发电方法
公开(公告)号：US20060021646A1
公开(公告)日：2006-02-02
申请号：US11194685
申请日：2005-08-02
申请人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
发明人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
IPC分类号： H01L35/12 , H01L35/28
CPC分类号： H01L35/34 , H01L35/22
摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.
摘要翻译：本发明提供一种具有高热电转换性能的热电转换装置。在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。

2. 发明授权

US07312392B2 Thermoelectric conversion device, and cooling method and power generating method using the device 有权
标题翻译：热电转换装置，以及使用该装置的冷却方法和发电方法
公开(公告)号：US07312392B2
公开(公告)日：2007-12-25
申请号：US11194685
申请日：2005-08-02
申请人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
发明人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
IPC分类号： H01L35/22
CPC分类号： H01L35/34 , H01L35/22
摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.
摘要翻译：本发明提供一种具有高热电转换性能的热电转换装置。在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。

3. 发明申请

US20050167699A1 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US20050167699A1
公开(公告)日：2005-08-04
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/56 , G11C13/00 , H01L21/02 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

4. 发明授权

US07167387B2 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US07167387B2
公开(公告)日：2007-01-23
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

5. 发明授权

US07351906B2 Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element 有权
标题翻译：制造结晶膜的方法，制造结晶膜层状基板的方法，制造热电转换元件的方法和热电转换元件
公开(公告)号：US07351906B2
公开(公告)日：2008-04-01
申请号：US11103525
申请日：2005-04-12
申请人： Satoshi Yotsuhashi , Hideaki Adachi , Yasunari Sugita , Tsutomu Kanno
发明人： Satoshi Yotsuhashi , Hideaki Adachi , Yasunari Sugita , Tsutomu Kanno
IPC分类号： H01L37/00
CPC分类号： H01L35/32 , H01L35/22 , H01L35/34 , Y10S117/915
摘要： It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined layered structure formed on a substrate therefrom through an action of water vapor. A method of manufacturing a crystalline film of the present invention includes the steps of: epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate; contacting water vapor supplied from a water vapor source with the layered structure in a chamber; and separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film. The layered structure has a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.
摘要翻译：通常情况下，适合于外延生长的衬底与用于诸如热电转换元件等的功能元件所需的衬底不匹配。本发明使得可以通过水蒸汽的作用将形成在其上的基板上的预定层叠结构分离。制造本发明的结晶膜的方法包括以下步骤：在基板上外延生长包括层状结构的结晶膜，使得层状结构与基板接触; 使从水蒸汽源供应的水蒸气与室中的层状结构接触; 并且从基板分离已经与水蒸气接触的层状结构，得到结晶膜。层状结构具有包含碱金属的层和含有选自Co，Fe，Ni，Mn，Ti，Cr，V，Nb和Mo中的至少一种元素的氧化物的层。

6. 发明申请

US20060107990A1 Thermoelectric conversion element and method of manufacturing the same, and thermoelectric conversion device using the element 有权
标题翻译：热电转换元件及其制造方法，以及使用该元件的热电转换元件
公开(公告)号：US20060107990A1
公开(公告)日：2006-05-25
申请号：US11194698
申请日：2005-08-02
申请人： Hideaki Adachi , Satoshi Yotsuhashi , Yasunari Sugita , Tsutomu Kanno
发明人： Hideaki Adachi , Satoshi Yotsuhashi , Yasunari Sugita , Tsutomu Kanno
IPC分类号： H01L35/30 , H01L35/28
CPC分类号： H01L35/32
摘要： The present invention provides a thermoelectric conversion element that has high efficiency even at reduced thickness. In this thermoelectric conversion element, striped p-type thermoelectric conversion parts are arranged on one surface of an insulating layer, and striped n-type thermoelectric conversion parts are arranged on the other surface. The two sets of stripes form overlapped portions. At one or more of the overlapped portions, a first p-type thermoelectric conversion part and a first n-type thermoelectric conversion part are electrically connected via a first conducting portion arranged within the insulating layer, a second p-type thermoelectric conversion part and a second n-type thermoelectric conversion part are electrically connected via a second conducting portion arranged within the insulating layer, and the first conducting portion and the second conducting portion are electrically isolated. The element of the present invention provides two junctions in a region where a conventional element would provide only one junction.
摘要翻译：本发明提供即使在减小的厚度下也具有高效率的热电转换元件。在该热电转换元件中，在绝缘层的一个表面上配置有条纹p型热电转换部，在另一面上配置有条纹状的n型热电转换部。两组条纹形成重叠部分。在一个或多个重叠部分中，第一p型热电转换部分和第一n型热电转换部分经由布置在绝缘层内的第一导电部分，第二p型热电转换部分和第二n型热电转换部分经由布置在绝缘层内的第二导电部分电连接，并且第一导电部分和第二导电部分电隔离。本发明的元件在常规元件仅提供一个结的区域中提供两个结。

7. 发明授权

US07317159B2 Thermoelectric conversion element and method of manufacturing the same, and thermoelectric conversion device using the element 有权
标题翻译：热电转换元件及其制造方法，以及使用该元件的热电转换元件
公开(公告)号：US07317159B2
公开(公告)日：2008-01-08
申请号：US11194698
申请日：2005-08-02
申请人： Hideaki Adachi , Satoshi Yotsuhashi , Yasunari Sugita , Tsutomu Kanno
发明人： Hideaki Adachi , Satoshi Yotsuhashi , Yasunari Sugita , Tsutomu Kanno
IPC分类号： H01L35/32
CPC分类号： H01L35/32
摘要： The present invention provides a thermoelectric conversion element that has high efficiency even at reduced thickness. In this thermoelectric conversion element, striped p-type thermoelectric conversion parts are arranged on one surface of an insulating layer, and striped n-type thermoelectric conversion parts are arranged on the other surface. The two sets of stripes form overlapped portions. At one or more of the overlapped portions, a first p-type thermoelectric conversion part and a first n-type thermoelectric conversion part are electrically connected via a first conducting portion arranged within the insulating layer, a second p-type thermoelectric conversion part and a second n-type thermoelectric conversion part are electrically connected via a second conducting portion arranged within the insulating layer, and the first conducting portion and the second conducting portion are electrically isolated. The element of the present invention provides two junctions in a region where a conventional element would provide only one junction.
摘要翻译：本发明提供即使在减小的厚度下也具有高效率的热电转换元件。在该热电转换元件中，在绝缘层的一个表面上配置有条纹p型热电转换部，在另一面上配置有条纹状的n型热电转换部。两组条纹形成重叠部分。在一个或多个重叠部分中，第一p型热电转换部分和第一n型热电转换部分经由布置在绝缘层内的第一导电部分，第二p型热电转换部分和第二n型热电转换部分经由布置在绝缘层内的第二导电部分电连接，并且第一导电部分和第二导电部分电隔离。本发明的元件在常规元件仅提供一个结的区域中提供两个结。

8. 发明申请

US20050178424A1 Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element 有权
标题翻译：制造结晶膜的方法，制造结晶膜层状基板的方法，制造热电转换元件的方法和热电转换元件
公开(公告)号：US20050178424A1
公开(公告)日：2005-08-18
申请号：US11103525
申请日：2005-04-12
申请人： Satoshi Yotsuhashi , Hideaki Adachi , Yasunari Sugita , Tsutomu Kanno
发明人： Satoshi Yotsuhashi , Hideaki Adachi , Yasunari Sugita , Tsutomu Kanno
IPC分类号： H01L35/12 , H01L35/22 , H01L35/32 , H01L35/34 , H01L37/00
CPC分类号： H01L35/32 , H01L35/22 , H01L35/34 , Y10S117/915
摘要： It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined layered structure formed on a substrate therefrom through an action of water vapor. A method of manufacturing a crystalline film of the present invention includes the steps of: epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate; contacting water vapor supplied from a water vapor source with the layered structure in a chamber; and separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film. The layered structure has a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.
摘要翻译：通常情况下，适合于外延生长的衬底与用于诸如热电转换元件等的功能元件所需的衬底不匹配。本发明使得可以通过水蒸汽的作用将形成在其上的基板上的预定层叠结构分离。制造本发明的结晶膜的方法包括以下步骤：在衬底上外延生长包括层状结构的结晶膜，使得层状结构与衬底接触; 使从水蒸汽源供应的水蒸气与室中的层状结构接触; 并且从基板分离已经与水蒸气接触的层状结构，得到结晶膜。层状结构具有包含碱金属的层和含有选自Co，Fe，Ni，Mn，Ti，Cr，V，Nb和Mo中的至少一种元素的氧化物的层。

9. 发明授权

US07435896B2 Thermoelectric conversion material, thermoelectric conversion element using the material, cooling device and electric apparatus using the element, and electric power generation method and cooling method using the element 有权
标题翻译：使用该材料的热电转换材料，热电转换元件，使用该元件的冷却装置和电气装置以及使用元件的发电方法和冷却方法
公开(公告)号：US07435896B2
公开(公告)日：2008-10-14
申请号：US11002588
申请日：2004-12-03
申请人： Hideaki Adachi , Yasunari Sugita , Satoshi Yotsuhashi , Tsutomu Kanno
发明人： Hideaki Adachi , Yasunari Sugita , Satoshi Yotsuhashi , Tsutomu Kanno
IPC分类号： H01L35/22
CPC分类号： C04B35/495 , C01G31/00 , C01G31/006 , C01P2006/40 , C04B35/6262 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3239 , C04B2235/3272 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/3294 , C04B2235/72 , C04B2235/76 , C04B2235/768 , C04B2235/96 , H01L35/22
摘要： With conventional thermoelectric conversion materials, their thermoelectric conversion performance has been insufficient, and a problem has been to achieve stable performance in an oxidizing atmosphere and an air atmosphere. In view of this, according to the present invention, a thermoelectric material is made of a complex oxide that has vanadium oxide as its main component and is represented by the general formula AxVOx+1.5+d. Here, A is at least one selected from an alkali element, an alkaline-earth element, and a rare-earth element, x is a numerical value within the range of 0.2 to 2, and d is a non-stoichiometric ratio of oxygen and is a numerical value within the range of from −1 to 1.
摘要翻译：使用传统的热电转换材料，其热电转换性能不足，并且在氧化气氛和空气气氛中的问题是达到稳定的性能。鉴于此，根据本发明，热电材料由具有氧化钒作为其主要成分的复合氧化物制成，并且由通式A x X x X + 1.5 + d 。这里，A为选自碱金属元素，碱土金属元素和稀土元素中的至少一种，x为0.2〜2的数值，d为氧的非化学计量比是-1〜1范围内的数值。

10. 发明申请

US20050081906A1 Thermoelectric conversion material, thermoelectric conversion element using the material, cooling device and electric apparatus using the element, and electric power generation method and cooling method using the element 有权
标题翻译：使用该材料的热电转换材料，热电转换元件，使用该元件的冷却装置和电气装置以及使用元件的发电方法和冷却方法
公开(公告)号：US20050081906A1
公开(公告)日：2005-04-21
申请号：US11002588
申请日：2004-12-03
申请人： Hideaki Adachi , Yasunari Sugita , Satoshi Yotsuhashi , Tsutomu Kanno
发明人： Hideaki Adachi , Yasunari Sugita , Satoshi Yotsuhashi , Tsutomu Kanno
IPC分类号： C04B35/00 , C01G31/00 , C04B35/495 , C04B35/50 , H01L35/14 , H01L35/16 , H01L35/20 , H01L35/22 , H01L35/34 , H02N11/00
CPC分类号： C04B35/495 , C01G31/00 , C01G31/006 , C01P2006/40 , C04B35/6262 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3239 , C04B2235/3272 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3291 , C04B2235/3294 , C04B2235/72 , C04B2235/76 , C04B2235/768 , C04B2235/96 , H01L35/22
摘要： With conventional thermoelectric conversion materials, their thermoelectric conversion performance has been insufficient, and a problem has been to achieve stable performance in an oxidizing atmosphere and an air atmosphere. In view of this, according to the present invention, a thermoelectric material is made of a complex oxide that has vanadium oxide as its main component and is represented by the general formula AxVOx+1.5+d. Here, A is at least one selected from an alkali element, an alkaline-earth element, and a rare-earth element, x is a numerical value within the range of 0.2 to 2, and d is a non-stoichiometric ratio of oxygen and is a numerical value within the range of from −1 to 1.
摘要翻译：使用传统的热电转换材料，其热电转换性能不足，并且在氧化气氛和空气气氛中的问题是达到稳定的性能。鉴于此，根据本发明，热电材料由具有氧化钒作为其主要成分的复合氧化物制成，并且由通式A x X x X + 1.5 + d 。这里，A为选自碱金属元素，碱土金属元素和稀土元素中的至少一种，x为0.2〜2的数值，d为氧的非化学计量比是-1〜1范围内的数值。

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