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    • 34. 发明申请
    • COMMUNICATION DEVICE
    • 通信设备
    • US20080304494A1
    • 2008-12-11
    • US12191499
    • 2008-08-14
    • Toshifumi Yokoyama
    • Toshifumi Yokoyama
    • H04Q11/00
    • H04W48/02H04W8/06H04W36/10H04W60/04H04W84/105H04W84/16H04W92/12H04W92/14
    • A communication device comprising: a checking unit checking whether a bandwidth from the ingress of first path down to the egress thereof and a bandwidth from the ingress of second path down to the egress thereof as a standby of a partial zone of first path, are established or not; a route information management unit generating, when the checking unit confirms that the bandwidth from the ingress of first path down to the egress thereof and the bandwidth from the ingress of second path down to the egress thereof as the standby of the partial zone of first path are established, route maintaining information for maintaining the bandwidth of the partial zone of first path; and a transmission unit transmitting the route maintaining information generated by the route information management unit to the neighboring communication device on the side of the egress of first path.
    • 一种通信装置,包括:检查单元,检查从第一路径的入口到其出口的带宽以及从第二路径的入口到其出口的带宽是否为第一路径的部分区域的待机; 或不; 路由信息管理单元,当检查单元确认从第一路径的入口到其出口的带宽和从第二路径的入口到其出口的带宽作为第一路径的部分区域的备用 建立用于维持第一路径的部分区带宽的路由维护信息; 以及发送单元,在所述第一路径的出口侧向所述相邻通信装置发送由所述路径信息管理单元生成的路线维护信息。
    • 38. 发明授权
    • Blank for halftone phase shift photomask and halftone phase shift photomask
    • 用于半色调相移光掩模和半色调相移光掩模的空白
    • US06458496B2
    • 2002-10-01
    • US09736805
    • 2000-12-14
    • Toshiaki MotonagaToshifumi YokoyamaTakafumi OkamuraYoshinori KinaseHiroshi MohriJunji FujikawaHiro-o NakagawaShigeki SumidaSatoshi YusaMasashi Ohtsuki
    • Toshiaki MotonagaToshifumi YokoyamaTakafumi OkamuraYoshinori KinaseHiroshi MohriJunji FujikawaHiro-o NakagawaShigeki SumidaSatoshi YusaMasashi Ohtsuki
    • G03S900
    • G03F1/32B32B17/06
    • A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.
    • 本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜,所述半色调相移膜具有多层结构,其中至少可以用氯化气体蚀刻的第一层 并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。 由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。 当首先用氟化气体蚀刻这样的坯料,然后用氯化气体蚀刻时,由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比,同时保持对短波长的曝光光的适用性 这是硅化物材料的特征,除了钽材料的特征的良好的化学稳定性和良好的加工性能之外,将能够高精度地进行图案化。 结果,可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。
    • 39. 发明授权
    • Method for repairing photomask by removing residual defect in said
photomask
    • 通过去除所述光掩模中的残留缺陷来修复光掩模的方法
    • US5965301A
    • 1999-10-12
    • US976453
    • 1997-11-25
    • Masami NaraToshifumi YokoyamaTsukasa Abe
    • Masami NaraToshifumi YokoyamaTsukasa Abe
    • G03F1/00G03F1/30G03F1/32H01L21/302H01L21/306H01L21/3065G03F9/00
    • G03F1/74
    • A method for repairing a photomask by removing a residual defect in the photomask is provided which can solve problems, involved in repair of the photomask by the conventional laser beam irradiation, such as various types of maladjustments, limitation of focusing of a laser beam, creation of roughening in the repaired area, and problems, involved in repair of the photomask by focused ion beam irradiation, such as damage to a transparent substrate and a gallium stain. The method comprises the steps of: (a) applying actinic radiation to the residual defect area to remove the residual defect except for a defect edge region having a predetermined width from the periphery of the residual defect area over the whole periphery of the residual defect area; and (b) removing the defect edge region, remaining unremoved by the physical means, having a predetermined width from the periphery of the residual defect area over the whole periphery of the residual defect area by chemical etching with a chemical, the predetermined width being such that the influence of the actinic radiation does not extend over the outside of the residual defect area and, at the same time, the etching time can be set so that the region having a predetermined width from the periphery is removed by the chemical etching without any substantial influence on other layers including a light-shielding layer.
    • 提供了通过去除光掩模中的残余缺陷来修复光掩模的方法,其可以解决通过常规激光束照射来修复光掩模的问题,诸如各种不正确的调整,激光束的聚焦限制,创建 在修复区域中的粗糙化,以及涉及通过聚焦离子束照射修复光掩模的问题,例如对透明基板的损坏和镓污染。 该方法包括以下步骤:(a)将光化辐射施加到残余缺陷区域,以除去残留缺陷区域的整个周边之外的残留缺陷区域周围具有预定宽度的缺陷边缘区域的残余缺陷 ; 和(b)通过化学蚀刻从残余缺陷区域的整个周边除去具有预定宽度的残留缺陷区域的预定宽度的物理装置保留的缺陷边缘区域,预定宽度为 光化辐射的影响不会延伸到残余缺陷区域的外部,并且同时可以设定蚀刻时间,使得通过化学蚀刻除去具有来自周边的预定宽度的区域,而没有任何 对包括遮光层的其它层的显着影响。