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31. 发明申请

US20060213428A1 Diamond substrate and manufacturing method thereof 失效
标题翻译：金刚石基板及其制造方法
公开(公告)号：US20060213428A1
公开(公告)日：2006-09-28
申请号：US11390333
申请日：2006-03-28
申请人： Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B25/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/20 , C30B29/04 , H01L21/02381 , H01L21/0243 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： The present invention provides a manufacturing method for a large-scale diamond substrate and a substrate produced by the method suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, and back-feed devices, and others. The manufacturing method for a diamond substrate of the present invention comprises: the mounting step of preparing a substrate having a main face comprising a first region which is a concave and having a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; a connecting step of forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and a polishing step of polishing to substantially flatten both the CVD diamond layers on the single crystalline diamond seed substrate and on the second region by mechanically polishing.
摘要翻译：本发明提供了通过适用于半导体光刻处理的方法制造的大规模金刚石基板和基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片处理和反馈装置，和别的。本发明的金刚石基板的制造方法包括：准备基板的安装步骤，所述基板具有主面，所述主面包括第一区域，所述第一区域是凹形的并且具有围绕所述第一区域的第二区域，并且安装在所述第一区域，具有厚于所述第一区域的凹入深度的板厚度的单晶金刚石种子基板; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层并且通过在所述第二区域上同时形成CVD金刚石层来相互连接的连接步骤; 以及抛光步骤，通过机械抛光在单晶金刚石种子基底上和第二区域上基本上平坦化CVD金刚石层。

32. 发明授权

US06998687B2 Surface acoustic wave (SAW) device 有权
标题翻译：表面声波（SAW）装置
公开(公告)号：US06998687B2
公开(公告)日：2006-02-14
申请号：US10240426
申请日：2002-01-24
申请人： Takashi Inoue , Satoshi Matsuo , Akihiko Namba
发明人： Takashi Inoue , Satoshi Matsuo , Akihiko Namba
IPC分类号： H01L27/14
CPC分类号： H03H9/1085 , H01L2224/16225 , H01L2924/16235 , H01L2924/181 , H03H9/02929 , H03H9/059 , H03H9/1092 , H01L2924/00012
摘要： A surface acoustic wave (SAW) device having improved moisture resistance is provided. The device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode on a first surface of the piezoelectric substrate, and a resin coating for covering the IDT electrode. After a piece of resin material of the resin coating is dipped in an amount of pure water as solvent having a mass as 10 times great as the piece of resin material at 120° C. under 2 atom pressure for twenty hours, a concentration of chlorine ion in the solvent is not higher than 50 ppm.
摘要翻译：提供了具有改善的耐湿性的表面声波（SAW）装置。该装置包括压电基板，压电基板的第一表面上的叉指式换能器（IDT）电极和用于覆盖IDT电极的树脂涂层。将树脂涂料的一片树脂材料在120℃，2原子压力下浸入一定量的作为树脂材料的质量的10倍量的纯水作为溶剂20小时，将氯的浓度溶剂中的离子不高于50ppm。

33. 发明授权

US06236141B1 Surface acoustic wave element 有权
标题翻译：表面声波元件
公开(公告)号：US06236141B1
公开(公告)日：2001-05-22
申请号：US09459107
申请日：1999-12-13
申请人： Hiroki Sato , Keiji Onishi , Akihiko Namba , Yutaka Taguchi , Yosihiro Tomita
发明人： Hiroki Sato , Keiji Onishi , Akihiko Namba , Yutaka Taguchi , Yosihiro Tomita
IPC分类号： H03H925
CPC分类号： H03H9/02834 , H03H3/10 , H03H9/02574 , H03H9/25
摘要： Disclosed is a SAW element with a propagation substrate that is a piezoelectric substrate. An auxiliary substrate is laminated on one surface of the propagation substrate by way of direct bonding, and a comb-shaped electrode is formed on another surface of the propagation substrate that is opposite the surface with the auxiliary substrate. The electrode excites an acoustic wave. The propagation substrate and the auxiliary substrate are not bonded to each other in at least a region immediately below a region where the comb-shaped electrode is formed. A coefficient of thermal expansion in a propagation direction of the acoustic wave of the auxiliary substrate is smaller than a coefficient of thermal expansion in a propagation direction of the acoustic wave of the propagation substrate.
摘要翻译：公开了具有作为压电基板的传播基板的SAW元件。辅助基板通过直接接合层叠在传播基板的一个表面上，并且梳状电极形成在传播基板的与辅助基板的表面相对的另一表面上。电极激发声波。传播基板和辅助基板在至少形成有梳状电极的区域的正下方的区域中不结合。辅助基板的声波的传播方向的热膨胀系数小于传播基板的声波的传播方向的热膨胀系数。

34. 发明授权

US5998907A Surface acoustic wave devices and their manufacturing method 失效
标题翻译：表面声波器件及其制造方法
公开(公告)号：US5998907A
公开(公告)日：1999-12-07
申请号：US087079
申请日：1998-05-29
申请人： Yutaka Taguchi , Kazuo Eda , Osamu Kawasaki , Yosihiro Tomita , Keiji Onishi , Shun-ichi Seki , Akihiko Namba , Hiroki Sato , Tetsuyosi Ogura
发明人： Yutaka Taguchi , Kazuo Eda , Osamu Kawasaki , Yosihiro Tomita , Keiji Onishi , Shun-ichi Seki , Akihiko Namba , Hiroki Sato , Tetsuyosi Ogura
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H03H9/64
CPC分类号： H03H9/02834 , H03H9/02574 , H03H9/02921
摘要： A surface acoustic wave device has a main substrate; a comb-like electrode formed on one of the main surfaces of said main substrate; and a supplementary substrate joined with the other main surface of said main substrate, wherein said supplementary substrate has a smaller thermal expansion coefficient and a larger thickness than said main substrate.
摘要翻译：表面声波装置具有主基板; 形成在所述主基板的一个主表面上的梳状电极; 以及与所述主基板的另一个主表面接合的辅助基板，其中所述辅助基板具有比所述主基板更小的热膨胀系数和更大的厚度。

35. 发明授权

US5982010A Piezoelectric device and method of manufacturing the same 失效
标题翻译：压电元件及其制造方法
公开(公告)号：US5982010A
公开(公告)日：1999-11-09
申请号：US976452
申请日：1997-11-25
申请人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
发明人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
IPC分类号： H01L41/22 , H01L41/312 , H01L41/338 , H03H3/02 , H01L29/84
CPC分类号： H03H3/02 , H01L41/312 , H01L41/338
摘要： A piezoelectric device is manufactured by: (1) mirror finishing surfaces of a first substrate and a second substrate made of a piezoelectric element; (2) forming grooves on at least one of the two surfaces of the first and second substrates; (3) joining the mirror-finished surfaces of the first substrate and the second substrate; (4) applying heat to the joined substrates and bonding them; (5) forming an opening on the first substrate so that a part of the exposed areas of the second substrate is exposed through the opening; (6) forming piezoelectric devices by forming electrodes on at least one of the second substrate through the opening and a corresponding area to the exposed area on the rear side of the second substrate; and (7) dividing the bonded substrates into portions each having one of the piezoelectric devices. Through this manufacturing method, piezoelectric devices with high yield ratios and high reliability can be obtained.
摘要翻译：压电器件通过以下制造：（1）第一衬底和由压电元件制成的第二衬底的镜面精加工表面; （2）在第一和第二基板的两个表面中的至少一个上形成凹槽; （3）连接第一基板和第二基板的镜面抛光面; （4）向接合的基片施加热量并将其粘合; （5）在所述第一基板上形成开口，使得所述第二基板的所述暴露区域的一部分通过所述开口露出; （6）通过在所述第二基板中的至少一个上通过所述开口形成电极并形成与所述第二基板的后侧上的暴露区域相对应的区域来形成压电装置; 和（7）将接合的衬底分成各自具有一个压电器件的部分。通过该制造方法，可以获得高屈服比和高可靠性的压电装置。

36. 发明授权

US5698471A Method of manufacturing a composite substrate and a piezoelectric device using the substrate 失效
标题翻译：使用该基板的复合基板和压电元件的制造方法
公开(公告)号：US5698471A
公开(公告)日：1997-12-16
申请号：US646451
申请日：1996-05-07
申请人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
发明人： Akihiko Namba , Tetsuyoshi Ogura , Yoshihiro Tomita , Kazuo Eda
IPC分类号： H01L41/312 , H01L41/39 , H03H3/02 , H03H9/05 , H03H9/19 , H01L21/56 , H01L21/463
CPC分类号： H03H9/0519 , H01L41/312 , H03H3/04 , H03H9/19 , Y10S148/012 , Y10T156/1052 , Y10T156/1082
摘要： A method of manufacturing a composite substrate and the composite substrate manufactured thereby wherein surfaces of first and second substrates having different thermal expansion coefficients are mirror finished and layered on each other. A first heat treatment is applied after which a part of the second substrate is removed to a depth sufficient to expose the first substrate. A final second heat treatment directly bonds the substrates.
摘要翻译：一种制造复合基板的方法和由此制造的复合基板，其中具有不同热膨胀系数的第一和第二基板的表面被镜面化并且彼此层叠。施加第一热处理之后，将第二基板的一部分去除足以露出第一基板的深度。最终的第二次热处理直接粘合基材。

37. 发明授权

US07390695B2 Diamond substrate and manufacturing method thereof 失效
标题翻译：金刚石基板及其制造方法
公开(公告)号：US07390695B2
公开(公告)日：2008-06-24
申请号：US11390333
申请日：2006-03-28
申请人： Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Keisuke Tanizaki , Akihiko Namba , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： H01L21/00
CPC分类号： C30B25/105 , C30B25/02 , C30B25/20 , C30B29/04 , H01L21/02381 , H01L21/0243 , H01L21/02527 , H01L21/0262 , H01L21/02645
摘要： A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, back-feed devices, and others. The manufacturing method of the present invention includes: preparing a substrate having a main face including a first region which is a concave and a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and polishing to substantially flatten both the CVD diamond layers and on the second region by mechanically polishing.
摘要翻译：适用于半导体光刻处理的大规模金刚石基板和所制造的基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片加工，反馈装置等。本发明的制造方法包括：准备具有包括第一区域的第一区域的主面和包围第一区域的第二区域的基板，以及在第一区域上安装具有第一区域的单晶金刚石种子基板板厚度比第一区域的凹深更厚; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层，并且通过在所述第二区域上同时形成CVD金刚石层来相互连接; 并通过机械研磨抛光以使CVD金刚石层和第二区域基本平坦化。

38. 发明申请

US20080113686A1 ELECTRONIC TUNER AND PORTABLE TELEPHONE DEVICE USING THE SAME 审中-公开
标题翻译：电子调谐器和便携式电话设备使用它
公开(公告)号：US20080113686A1
公开(公告)日：2008-05-15
申请号：US11935425
申请日：2007-11-06
申请人： Masaaki Noda , Masaharu Iwasa , Akihiko Namba
发明人： Masaaki Noda , Masaharu Iwasa , Akihiko Namba
IPC分类号： H04M1/00
CPC分类号： H04B1/3805 , H03G3/3052
摘要： A high-frequency amplifier inserted between a television input terminal and a first filter and having a current control input for controlling a current value is provided, together with a current control unit for controlling the current of the high-frequency amplifier, and the current of the high-frequency amplifier is set larger while the portable telephone is sending a transmission signal.
摘要翻译：与用于控制高频放大器的电流的电流控制单元一起，设置插入在电视输入端子和第一滤波器之间并具有用于控制电流值的电流控制输入的高频放大器，以及电流控制单元当便携式电话发送发送信号时，高频放大器被设置得更大。

39. 发明授权

US07323812B2 Process for producing diamond electron emission element and electron emission element 失效
标题翻译：制造金刚石电子发射元件和电子发射元件的方法
公开(公告)号：US07323812B2
公开(公告)日：2008-01-29
申请号：US10555296
申请日：2004-09-29
申请人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
发明人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J9/30
CPC分类号： H01J1/3044 , H01J1/304 , H01J9/025 , H01J29/04 , H01J2201/30457
摘要： A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si(111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.
摘要翻译：一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延金刚石的步骤。衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。此外，衬底是Si，并且模具的斜率可以是Si（111）面。金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向或（110）面和晶界。

40. 发明申请

US20080004819A1 Method and Apparatus for Measuring Electric Circuit Parameters 失效
标题翻译：测量电路参数的方法和装置
公开(公告)号：US20080004819A1
公开(公告)日：2008-01-03
申请号：US11579866
申请日：2005-05-13
申请人： Akihiko Namba , Tetsuyoshi Ogura , Toru Yamada
发明人： Akihiko Namba , Tetsuyoshi Ogura , Toru Yamada
IPC分类号： G01R27/06
CPC分类号： G01R27/28
摘要： A method for measuring electric circuit parameters of a 2-terminal circuit having first and second terminals, includes steps of: terminating one of the first and second terminals with a terminal impedance Z1, to measure reflection characteristics al for the other terminal; terminating one of the first and second terminals with a terminal impedance Z2 different from the terminal impedance Z1, to measure reflection characteristics (2 for the other terminal; terminating one of the first and second terminals with a terminal impedance Z3 different from the terminal impedances Z1 and Z2, to measure reflection characteristics α3 for the other terminal; and calculating electric circuit parameters of the 2-terminal circuit based on the resultant reflection characteristics α1, α2 and α3, whereby measuring electric circuit parameters, such as S-parameters, Z-parameters or the like, even of a DUT having a weak ground, in a simple way with high accuracy and low cost.
摘要翻译：一种用于测量具有第一和第二端子的2端电路的电路参数的方法，包括以下步骤：用端子阻抗Z1端接第一端子和第二端子之一，以测量另一端子的反射特性a1; 用不同于端子阻抗Z1的端子阻抗Z2端接第一端子和第二端子中的一个，以测量反射特性（2为另一端子;端接阻抗Z3与端子阻抗Z1不同的终端中的一个端子和Z2，以测量另一终端的反射特性α3;以及基于所得到的反射特性α1，α2和α3计算2端电路的电路参数，由此测量诸如S参数，Z- 参数等，即使具有弱地的DUT也能以简单的方式具有高精度和低成本。

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