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31. 发明申请

US20110115380A1 PLASMA GENERATION DEVICE AND PLASMA PROCESSING DEVICE 有权
标题翻译：等离子体生成装置和等离子体处理装置
公开(公告)号：US20110115380A1
公开(公告)日：2011-05-19
申请号：US12993640
申请日：2009-05-21
申请人： Akinori Ebe , Yasunori Ando , Masanori Watanabe
发明人： Akinori Ebe , Yasunori Ando , Masanori Watanabe
IPC分类号： H05H1/46 , H05H1/24
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32174 , H01J37/32183 , H01J37/3266
摘要： A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.
摘要翻译：形成真空容器的一部分的凸缘具有由绝缘框架包围的矩形开口。设置板状射频天线导体13，以覆盖开口，绝缘框被夹持。在这种结构中，射频电源经由匹配盒连接到沿着射频天线导体的长度的一端，另一端连接到地，并且提供电力使得射频电流从射频天线导体的一端流向另一端。通过该方法，可以降低射频天线导体的阻抗，能够有效地产生电子温度低的高密度等离子体。

32. 发明授权

US07436075B2 Ion beam irradiation apparatus and ion beam irradiation method 失效
标题翻译：离子束照射装置和离子束照射方法
公开(公告)号：US07436075B2
公开(公告)日：2008-10-14
申请号：US10590911
申请日：2005-08-31
申请人： Yasunori Ando
发明人： Yasunori Ando
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L21/68764 , G02F1/1337 , H01J2237/317
摘要： The ion beam irradiation apparatus has a vacuum chamber 10, an ion source 2, a substrate driving mechanism 30, rotation shafts 14, arms 12, and a motor. The ion source 2 is disposed inside the vacuum chamber 10, and emits an ion beam 4 which is larger in width than a substrate 6, to the substrate 6. The substrate driving mechanism 30 reciprocally drives the substrate 6 in the vacuum chamber 10. The center axes 14a of the rotation shafts 14 are located in a place separated from the ion source 2 toward the substrate, and substantially parallel to the surface of the substrate. The arms 12 are disposed inside the vacuum chamber 10, and support the ion source 2 through the rotation shafts 14. The motor is disposed outside the vacuum chamber 10, and reciprocally rotates the rotation shaft 14.
摘要翻译：离子束照射装置具有真空室10，离子源2，基板驱动机构30，旋转轴14，臂12以及电动机。离子源2设置在真空室10的内部，并且向衬底6发射宽度大于衬底6的离子束4。基板驱动机构30在真空室10内往复驱动基板6。旋转轴14的中心轴线14a位于从离子源2朝向基板分离的位置，并且基本上平行于基板的表面。臂12设置在真空室10的内部，并通过旋转轴14支撑离子源2。电动机设置在真空室10的外部，并且使旋转轴14往复旋转。

33. 发明授权

US07367139B2 Vacuum processing apparatus and method operation thereof 失效
标题翻译：真空处理装置及其方法操作
公开(公告)号：US07367139B2
公开(公告)日：2008-05-06
申请号：US11454875
申请日：2006-06-19
申请人： Yasunori Ando , Masatoshi Onoda
发明人： Yasunori Ando , Masatoshi Onoda
IPC分类号： F26B5/04 , F26B19/00
CPC分类号： F26B25/008 , F26B5/04 , Y10S414/139
摘要： This vacuum processing apparatus has a fixed processing chamber 24 and two movable load lock chambers 28a and 28b. A gate valve 26 is provided on the processing chamber 24, and gate valves 30 are respectively provided on the load lock chambers 28a and 28b. Each of the load lock chambers 28a and 28b is moved in a Y direction by a preparatory chamber moving mechanism 34. A vacuum seal 54, which is expandable and shrinkable so as to vacuum seal a gap G between the gate valves 26 and 30 which are set close to each other during the expansion, is provided around a peripheral edge portion of the processing chamber gate valve 26. Further, a substrate transporting mechanism for transporting a substrate 2 between the processing chamber 24 and each of the load lock chambers 28a and 28b set close thereto.
摘要翻译：该真空处理装置具有固定的处理室24和两个可移动的装载锁定室28a和28b。闸阀26设置在处理室24上，闸阀30分别设置在负载锁定室28a和28b上。每个装载锁定室28a和28b由预备室移动机构34在Y方向上移动。可膨胀和收缩以便真空密封闸阀26和30之间的间隙G的真空密封件54 在处理室闸阀26的周缘部周围设置有膨胀时彼此靠近设置的基板输送机构。另外，基板输送机构用于在处理室24和各负载锁定室28之间输送基板2 a和28 b附近。

34. 发明授权

US07078714B2 Ion implanting apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US07078714B2
公开(公告)日：2006-07-18
申请号：US10845209
申请日：2004-05-14
申请人： Syuichi Maeno , Masao Naito , Yasunori Ando , Hilton F. Glavish
发明人： Syuichi Maeno , Masao Naito , Yasunori Ando , Hilton F. Glavish
IPC分类号： H01J37/00
CPC分类号： H01J37/3171 , H01J2237/0455 , H01J2237/057 , H01J2237/1502 , H01J2237/20228 , H01J2237/24528 , H01J2237/24542 , H01L21/26513 , H01L21/2658
摘要： The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.
摘要翻译：根据本发明的离子注入装置包括：用于产生包括所需离子种类的离子束20的离子源，并且成形为具有比衬底82的窄宽度更长的宽度的片材;质量分离磁体36，用于选择性地导出通过在与其表面垂直的方向上弯曲离子束来形成期望的离子种类，通过与质量分离磁体36配合选择性地使期望的离子种类通过的分离狭缝72和用于往复驱动的衬底驱动装置86 基板82在离开光束20的已经通过分离狭缝72的照射区域内与离子束20的片表面20s基本垂直的方向。

35. 发明授权

US06555831B1 Ion implanting apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US06555831B1
公开(公告)日：2003-04-29
申请号：US09559728
申请日：2000-04-28
申请人： Masashi Konishi , Shuichi Maeno , Yasunori Ando
发明人： Masashi Konishi , Shuichi Maeno , Yasunori Ando
IPC分类号： H01J3700
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/0822
摘要： An ion implanting apparatus is provided with a control apparatus 22 for controlling the filament current passing to the respective filaments 6 in accordance with the beam current IB measured by a plurality of beam current measuring instruments 18. The control apparatus 22 performs, at least once respectively, {circle around (1)} the current value control routine which calculates average values of all beam current measured by the beam current measuring instruments 18, and increases and decreases the respective filament current IF such that the average value comes near to the set value, and {circle around (2)} the uniformity control routine which groups the beam current measuring instruments 17 into the number of the filaments, seeks for a maximum value and the minimum value from all the measured values of the beam current IB, decides groups to which the maximum value and the minimum value belong, decreases the filament current IF passing to the filaments 6 corresponding to the maximum value, and increases the filament current IF passing to the filaments 6 corresponding to the minimum value.
摘要翻译：离子注入装置设置有控制装置22，用于根据由多个射束电流测量仪器18测量的射束电流IB来控制通过各细丝6的细丝电流。控制装置22至少分别执行一次，{圆周（1）计算由束电流测量仪18测量的所有束电流的平均值的当前值控制程序，并使各灯丝电流IF增加和减小使得平均值接近设定值，以及 {圆周（2）将束电流测量仪器17组合成长丝数的均匀性控制程序寻求最大值，并从束电流IB的全部测量值求最小值，决定最大值值和最小值属于的情况，减少对应于最大值的细丝6的细丝电流IF ，并且增加对应于最小值的细丝6的细丝电流IF。

36. 发明授权

US4866746A Coated material and X-ray exposure mask 失效
标题翻译：涂层材料和X射线曝光面膜
公开(公告)号：US4866746A
公开(公告)日：1989-09-12
申请号：US92537
申请日：1987-09-03
申请人： Takahiro Nakahigashi , Yasunori Ando , Eiji Kamijo
发明人： Takahiro Nakahigashi , Yasunori Ando , Eiji Kamijo
IPC分类号： C23C14/06 , C23C16/34 , G21F1/08
CPC分类号： G21F1/08 , C23C14/0641 , C23C14/0647 , C23C16/34
摘要： A coated material comprises: a substrate; and a film containing boron, nitrogen and one selected from a group consisting of silicon and germanium, the film being formed on the substrate. An X-ray exposure mask of the present invention comprises: an X-ray absorbent layer; an X-ray permeable support layer for supporting the absorbent layer; and a mask support member for supporting the support layer; wherein the support layer contains boron and nitrogen and one element selected from a group consisting of silicon and germanium.
摘要翻译：涂覆材料包括：基材; 以及含有硼，氮和选自硅和锗的一种的膜，该膜形成在基板上。本发明的X射线曝光掩模包括：X射线吸收层; 用于支撑吸收层的X射线透过支撑层; 以及用于支撑所述支撑层的掩模支撑构件; 其中所述载体层含有硼和氮，以及一种选自硅和锗的元素。

37. 发明授权

US4828870A Method of forming a thin aluminum film 失效
标题翻译：形成薄铝膜的方法
公开(公告)号：US4828870A
公开(公告)日：1989-05-09
申请号：US126014
申请日：1987-11-27
申请人： Yasunori Ando , Kiyoshi Ogata
发明人： Yasunori Ando , Kiyoshi Ogata
IPC分类号： C23C14/14 , C04B41/51 , C04B41/88 , C23C14/18 , C23C14/22 , C23C14/24
CPC分类号： C04B41/009 , C04B41/51 , C04B41/88 , C23C14/18 , C23C14/22 , C04B2111/00844
摘要： A method for depositing a thin aluminum film in a vacuum on a surface of a substrate which comprises the steps of:(a) Irradiating the surface of the substrate with a beam of ions of an inert gas, having a kinetic energy ranging from 100 eV to 1,000 eV at an angle of incidence ranging from about 0.degree. to 60.degree. to a normal of the surface.(b) Depositing vaporized aluminum on the surface of the substrate, in which the ratio of the amount of ions irradiating the surface to the amount of vapor deposited on the surface ranges from about 0.5% to 30% and wherein the temperature of the substrate ranges from about room temperature to 300.degree. C.
摘要翻译：一种在真空中沉积薄铝膜的方法，该方法包括以下步骤：（a）用具有100eV的动能的惰性气体离子束照射衬底的表面至约1000eV，其入射角为约0°至60°，至表面法线。（b）在基板的表面上沉积蒸发的铝，其中照射表面的离子的量与沉积在表面上的气相的量的比率为约0.5％至30％，并且其中基板的温度范围从约室温到300℃

38. 发明授权

US4683149A Film forming process 失效
标题翻译：成膜工艺
公开(公告)号：US4683149A
公开(公告)日：1987-07-28
申请号：US860119
申请日：1986-05-06
申请人： Yasuo Suzuki , Yasunori Ando
发明人： Yasuo Suzuki , Yasunori Ando
IPC分类号： C23C14/22 , C23C14/32 , C23C14/48 , C23C14/56 , B05D3/06
CPC分类号： C23C14/562 , C23C14/22 , C23C14/32 , C23C14/48 , C23C14/568
摘要： A process and an apparatus for forming films, up to several microns in thickness, on substrates by the combination of ion implantation and vapor deposition; said apparatus comprising a vacuum chamber, means for transporting a substrate within the vacuum chamber, a first ion source having an accelerating voltage of 500 V to 5 kV and disposed at a first position along the direction of movement of the substrate within the vacuum chamber, a first evaporator disposed at a second position along the direction of movement of the substrate within the vacuum chamber, and a second ion source having an accelerating voltage of 10 kV to 100 kV and disposed at a third position along the direction of movement of the substrate within the vacuum chamber, and optionally further comprising a second evaporator disposed at a fourth position along the direction of movement of the substrate within the vacuum chamber, which may be provided with high-frequency exciting means disposed in a path of release of vapor from the second evaporator toward the substrate for ionizing the vapor, and means for forming an electric field for accelerating the ionized vapor toward the substrate.
摘要翻译：一种用于通过离子注入和气相沉积的组合在衬底上形成多达几微米厚度的膜的方法和装置; 所述装置包括真空室，用于在真空室内输送基板的装置，具有500V至5kV的加速电压的第一离子源，并且设置在沿真空室内的基板运动方向的第一位置，设置在所述真空室内的所述基板的移动方向的第二位置的第一蒸发器和具有10kV〜100kV的加速电压的第二离子源，并且配置在沿着所述基板的移动方向的第三位置并且可选地还包括设置在沿着真空室内的衬底的移动方向的第四位置的第二蒸发器，该第二蒸发器可以设置有高频激励装置，该高频激励装置设置在从朝向基板离子化蒸气的第二蒸发器，以及用于形成用于将离子化蒸气加速的电场的装置底物。

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