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31. 发明申请

US20050208718A1 Methods of forming a capacitor using an atomic layer deposition process 有权
标题翻译：使用原子层沉积工艺形成电容器的方法
公开(公告)号：US20050208718A1
公开(公告)日：2005-09-22
申请号：US11065086
申请日：2005-02-24
申请人： Jae-Soon Lim , Sung-Tae Kim , Young-Sun Kim , Young-Geun Park , Suk-Jin Chung , Seung-Hwan Lee
发明人： Jae-Soon Lim , Sung-Tae Kim , Young-Sun Kim , Young-Geun Park , Suk-Jin Chung , Seung-Hwan Lee
IPC分类号： H01L27/108 , H01L21/02 , H01L21/285 , H01L21/314 , H01L21/469 , H01L21/8242
CPC分类号： H01L21/0228 , H01L21/02175 , H01L21/02178 , H01L21/022 , H01L21/02274 , H01L21/28568 , H01L21/3141 , H01L27/10852 , H01L28/75 , H01L28/91
摘要： Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure including a lower electrode. An ammonia (NH3) plasma is provided onto the substrate to form a dielectric layer including aluminum nitride on the substrate including the lower electrode. An upper electrode is formed on the dielectric layer. A second dielectric layer may be provided oil the first dielectric layer
摘要翻译：使用原子层沉积工艺形成电容器的方法包括在衬底上提供包含铝前体的反应物以将反应物的一部分化学吸附到衬底的表面。衬底具有包括下电极的底层结构。在基板上提供氨（NH 3 3）等离子体，以在包括下电极的基板上形成包括氮化铝的电介质层。在电介质层上形成上电极。可以为第一介电层提供第二介电层油

32. 发明申请

US20050200817A1 Optical system with iris controlled in real time 有权
标题翻译：具有实时控制的光圈的光学系统
公开(公告)号：US20050200817A1
公开(公告)日：2005-09-15
申请号：US11073574
申请日：2005-03-08
申请人： Sung-tae Kim , Jeong-ho Nho
发明人： Sung-tae Kim , Jeong-ho Nho
IPC分类号： G03B21/14
CPC分类号： G03B21/2053
摘要： An optical system having an iris controlled in real time and a control method of amount of light thereof The optical system includes a light source, a light modulator modulating a light emitted from the light source to a certain image, a driving part controlling the light modulator to produce the certain image and outputting luminance information of the certain image, a projector projecting the certain image, a screen on which the projected image is formed, a projection iris controlling an amount of light projected from the light modulator onto the screen, and a iris controller receiving the luminance information of the certain image from the driving part and controlling the projection iris corresponding to the luminance information of the certain image. Since the opening range of the iris is controlled in real time, the contrast ratio (C/R) is improved.
摘要翻译：具有实时控制的光圈的光学系统及其光量的控制方法光学系统包括光源，调制从光源发射到某一图像的光的光调制器，控制光调制器的驱动部分为了产生该特定图像并输出该特定图像的亮度信息，投影该特定图像的投影仪，其上形成投影图像的屏幕，将从光调制器投影的光量控制在屏幕上的投影光圈，以及光圈控制器从驱动部分接收特定图像的亮度信息，并控制与特定图像的亮度信息相对应的投影光圈。由于实时控制虹膜的开口范围，因此对比度（C / R）提高。

33. 发明申请

US20050170601A1 Methods of forming dielectric structures and capacitors 有权
标题翻译：形成电介质结构和电容器的方法
公开(公告)号：US20050170601A1
公开(公告)日：2005-08-04
申请号：US11059449
申请日：2005-02-17
申请人： Kyoung-Ryul Yoon , Han-Mei Choi , Seung-Hwan Lee , Dae-Sik Choi , Ki-Yeon Park , Young-Sun Kim , Sung-Tae Kim , Cha-Young You
发明人： Kyoung-Ryul Yoon , Han-Mei Choi , Seung-Hwan Lee , Dae-Sik Choi , Ki-Yeon Park , Young-Sun Kim , Sung-Tae Kim , Cha-Young You
IPC分类号： H01L21/20 , H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L28/40 , H01L21/02178 , H01L21/02189 , H01L21/022 , H01L21/0228 , H01L27/1085 , H01L28/65 , H01L28/90
摘要： A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.
摘要翻译：可以在基板上形成包括电介质结构的电容器，下部电极。电介质结构可以形成在下电极上，并且可以包括可以改善电介质结构的形态的第一薄膜和可以具有大于第一薄膜的EOT中的至少一个的第二薄膜薄膜和比第一薄膜高的介电常数。可以在电介质结构上形成上电极，并且电介质结构可以具有改进的形态和/或更高的介电常数。

34. 发明申请

US20050051828A1 Methods of forming metal thin films, lanthanum oxide films, and high dielectric films for semiconductor devices using atomic layer deposition 审中-公开
标题翻译：使用原子层沉积形成金属薄膜，氧化镧膜和用于半导体器件的高介电膜的方法
公开(公告)号：US20050051828A1
公开(公告)日：2005-03-10
申请号：US10828596
申请日：2004-04-21
申请人： Ki-yeon Park , Sung-tae Kim , Young-sun Kim , In-sung Park , Jae-hyun Yeo , Yun-jung Lee , Ki-vin Im
发明人： Ki-yeon Park , Sung-tae Kim , Young-sun Kim , In-sung Park , Jae-hyun Yeo , Yun-jung Lee , Ki-vin Im
IPC分类号： H01L21/20 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316 , H01L21/8242 , H01B1/00 , H01L27/108 , H01L29/94 , H01L31/119 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45529 , C23C16/45553 , H01L21/02178 , H01L21/02192 , H01L21/022 , H01L21/02337 , H01L21/3141 , H01L21/31604 , H01L27/1085
摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.
摘要翻译：本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

35. 发明申请

US20050009369A1 Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device 有权
标题翻译：使用原子层沉积工艺形成多层结构的方法以及形成集成电路器件的电容器的方法
公开(公告)号：US20050009369A1
公开(公告)日：2005-01-13
申请号：US10884507
申请日：2004-07-02
申请人： Gab-Jin Nam , Jong-Wan Kwon , Han-Mei Choi , Jae-Soon Lim , Seung-Hwan Lee , Ki-Chul Kim , Sung-Tae Kim , Young-Sun Kim
发明人： Gab-Jin Nam , Jong-Wan Kwon , Han-Mei Choi , Jae-Soon Lim , Seung-Hwan Lee , Ki-Chul Kim , Sung-Tae Kim , Young-Sun Kim
IPC分类号： H01L27/108 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/31 , H01L21/469 , H01L21/8242 , H01L21/20
CPC分类号： H01L21/0228 , C23C16/403 , C23C16/405 , C23C16/45529 , H01L21/02175 , H01L21/022 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31645 , H01L28/40 , H01L28/90
摘要： Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
摘要翻译：使用原子层沉积工艺形成的多层结构包括多个金属氧化物层，其中形成金属氧化物层而不存在层间氧化物层，并且可以包括不同的金属氧化物组合物。

36. 发明申请

US20050000426A1 Methods and apparatus for depositing a thin film on a substrate 审中-公开
标题翻译：在基板上沉积薄膜的方法和装置
公开(公告)号：US20050000426A1
公开(公告)日：2005-01-06
申请号：US10747803
申请日：2003-12-29
申请人： Ki-Vin Im , In-Sung Park , Sung-Tae Kim , Young-Sun Kim , Jae-Hyun Yeo , Yun-Jung Lee , Ki-Yeon Park
发明人： Ki-Vin Im , In-Sung Park , Sung-Tae Kim , Young-Sun Kim , Jae-Hyun Yeo , Yun-Jung Lee , Ki-Yeon Park
IPC分类号： H01L21/02 , C23C16/00 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455
CPC分类号： C23C16/45544 , C23C16/40 , C23C16/4481
摘要： An apparatus for depositing a thin film includes a reaction chamber, a reaction gas provider to supply a reaction gas and/or inert gas to the reaction chamber, an oxidant provider to supply a first oxidant and a second oxidant to the reaction chamber, and an air drain to exhaust gas from the apparatus. The oxidant provider is operable to supply the second oxidant to the reaction chamber using the first oxidant as a transfer gas.
摘要翻译：用于沉积薄膜的装置包括反应室，向反应室供应反应气体和/或惰性气体的反应气体提供者，向反应室供应第一氧化剂和第二氧化剂的氧化剂供体，以及从设备排出废气。氧化剂供应商可操作以使用第一氧化剂作为转移气体将第二氧化剂供应到反应室。

37. 发明授权

US06680251B2 Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters 有权
标题翻译：通过改变化学气相沉积参数化学气相沉积钌的方法
公开(公告)号：US06680251B2
公开(公告)日：2004-01-20
申请号：US10080000
申请日：2002-02-21
申请人： Seok-jun Won , Cha-young Yoo , Sung-tae Kim , Young-wook Park , Yun-jung Lee , Soon-yeon Park
发明人： Seok-jun Won , Cha-young Yoo , Sung-tae Kim , Young-wook Park , Yun-jung Lee , Soon-yeon Park
IPC分类号： H01L2144
CPC分类号： H01L21/28556 , C23C16/0272 , C23C16/40 , H01L21/28568 , H01L28/55 , H01L28/60
摘要： A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.
摘要翻译：通过以钌源与氧气的化学气相沉积流速比在化学气相沉积基底上的氧化钌晶面层形成层。钌的主层通过提高钌源与氧气的化学气相沉积流速比化学气相沉积在接种层上。

38. 发明授权

US06599807B2 Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics 有权
公开(公告)号：US06599807B2
公开(公告)日：2003-07-29
申请号：US10034043
申请日：2001-12-20
申请人： Jae-soon Lim , Seung-hwan Lee , Han-mei Choi , Yun-jung Lee , Gab-jin Nam , Ki-yeon Park , Young-sun Kim , Sung-tae Kim
发明人： Jae-soon Lim , Seung-hwan Lee , Han-mei Choi , Yun-jung Lee , Gab-jin Nam , Ki-yeon Park , Young-sun Kim , Sung-tae Kim
IPC分类号： H01L2972
CPC分类号： H01L28/55
摘要： A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

39. 发明授权

US06516148B1 Barrel assembly of zoom camera 有权
标题翻译：变焦摄像机筒组件
公开(公告)号：US06516148B1
公开(公告)日：2003-02-04
申请号：US09672013
申请日：2000-09-29
申请人： Sung-tae Kim , Sung-wook Choi , Nae-jin Jo
发明人： Sung-tae Kim , Sung-wook Choi , Nae-jin Jo
IPC分类号： G03B700
CPC分类号： G02B7/10
摘要： A barrel assembly of a zoom camera includes a zoom ring at which a front lens group is installed and which is moved back and forth along the optical axis, a rear lens group frame at which a rear lens group is installed along the same optical axis as the front lens group and which is coupled to the zoom ring, and a cam means for correcting the optical position of the rear lens group with respect to the front lens group during operation of zoom.
摘要翻译：变焦摄像机的镜筒组件包括一个变焦环，前置透镜组安装在该变焦环上并沿着光轴前后移动;后透镜组框，其中后透镜组沿着相同的光轴安装，前透镜组并且耦合到变焦环;以及凸轮装置，用于在变焦操作期间校正后透镜组相对于前透镜组的光学位置。

40. 发明授权

US06333227B1 Methods of forming hemispherical grain silicon electrodes by crystallizing the necks thereof 失效
标题翻译：通过使其颈部结晶形成半球形硅电极的方法
公开(公告)号：US06333227B1
公开(公告)日：2001-12-25
申请号：US09378682
申请日：1999-08-20
申请人： Sung-Tae Kim , Kyung-Hoon Kim
发明人： Sung-Tae Kim , Kyung-Hoon Kim
IPC分类号： H01L218242
CPC分类号： H01L28/84 , Y10S438/964
摘要： The crystallinity of non-monocrystalline silicon necks that connect monocrystalline silicon hemispherical grains to an underlying electrode on an integrated circuit substrate is increased. Preferably, the non-monocrystalline silicon necks are crystallized. By crystallizing the non-monocrystalline silicon necks, the necks may be made more resistant to breaking and detaching during subsequent cleaning processes. The non-monocrystalline silicon necks preferably are crystallized by thermal annealing after fabrication of the hemispherical grain silicon.
摘要翻译：将单晶硅半球形晶粒连接到集成电路基板上的底层电极的非单晶硅The The的结晶度增加。优选地，非单晶硅are结晶。通过使非单晶硅By结晶，可以使颈部在随后的清洗过程中更耐破裂和分离。非单晶硅颈部优选在制造半球形晶粒硅之后通过热退火而结晶。

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