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31. 发明授权

US06364953B1 Method and apparatus for making aerogel film 失效
标题翻译：制造气凝胶膜的方法和装置
公开(公告)号：US06364953B1
公开(公告)日：2002-04-02
申请号：US09577028
申请日：2000-05-23
申请人： Nobuyuki Kawakami , Yoshito Fukumoto , Kenichi Inoue , Kohei Suzuki , Takashi Kinoshita , Katsuhiro Uehara
发明人： Nobuyuki Kawakami , Yoshito Fukumoto , Kenichi Inoue , Kohei Suzuki , Takashi Kinoshita , Katsuhiro Uehara
IPC分类号： B05C1100
CPC分类号： H01L21/6715 , C01B33/1585 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31058 , H01L21/3121 , H01L21/31695 , Y02P20/544
摘要： A method for making an aerogel film includes the steps of performing a gelation reaction of a metal alkoxide on a substrate to prepare a substrate with a wet-gel film, and converting the wet-gel film into an aerogel film by a supercritical or sub-critical drying process of the substrate with the wet-gel film, wherein the degree of gelation of the wet-gel film is controlled to be a predetermined value at the start of the supercritical or sub-critical drying process. Aerogel films having uniform qualities are produced by the supercritical or sub-critical drying process in one lot.
摘要翻译：制备气凝胶膜的方法包括以下步骤：在基材上进行金属醇盐的凝胶化反应，以制备具有湿凝胶膜的基材，并且通过超临界或亚临界转移将湿凝胶膜转化成气凝胶膜，使用湿凝胶膜对基材进行临界干燥处理，其中在超临界或亚临界干燥过程开始时将湿凝胶膜的凝胶化程度控制在预定值。具有均匀性质的气凝胶膜通过超临界或亚临界干燥工艺生产。

32. 发明授权

US08535997B2 Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device 有权
标题翻译：接线结构，薄膜晶体管基板，薄膜晶体管基板的制造方法以及显示装置
公开(公告)号：US08535997B2
公开(公告)日：2013-09-17
申请号：US12999034
申请日：2009-07-03
申请人： Nobuyuki Kawakami , Shinya Fukuma , Aya Miki , Mototaka Ochi , Shinya Morita , Yoshihiro Yokota , Hiroshi Goto
发明人： Nobuyuki Kawakami , Shinya Fukuma , Aya Miki , Mototaka Ochi , Shinya Morita , Yoshihiro Yokota , Hiroshi Goto
IPC分类号： H01L21/84
CPC分类号： H01L23/53238 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L21/28525 , H01L21/76843 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.
摘要翻译：提供一种直接接触技术，通过该技术可以消除由纯Cu或Cu合金构成的Cu合金布线与半导体层之间的阻挡金属层，并且Cu合金布线可以直接和可靠地连接到半导体层内加工边缘宽布线结构从衬底侧依次设置有半导体层和由纯Cu或Cu合金构成的Cu合金膜。在半导体层和Cu合金膜之间包含层叠结构。层叠结构由（N，C，F）层构成，其含有选自由氮，碳和氟组成的组中的至少一种元素，以及含有Cu和Si的Cu-Si扩散层，这个顺序是从衬底一侧。此外，至少从由氮，碳和氟组成的组中选择的一种元素与包含在半导体层中的Si键合。

33. 发明申请

US20110121297A1 WIRING STRUCTURE, THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY DEVICE 有权
标题翻译：导线结构，薄膜晶体管基板，制造薄膜晶体管基板的方法和显示装置
公开(公告)号：US20110121297A1
公开(公告)日：2011-05-26
申请号：US12999034
申请日：2009-07-03
申请人： Nobuyuki Kawakami , Shinya Fukuma , Aya Miki , Mototaka Ochi , Shinya Morita , Yoshihiro Yokota , Hiroshi Goto
发明人： Nobuyuki Kawakami , Shinya Fukuma , Aya Miki , Mototaka Ochi , Shinya Morita , Yoshihiro Yokota , Hiroshi Goto
IPC分类号： H01L29/02 , H01L23/48 , H01L33/00
CPC分类号： H01L23/53238 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L21/28525 , H01L21/76843 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.
摘要翻译：提供一种直接接触技术，通过该技术可以消除由纯Cu或Cu合金构成的Cu合金布线与半导体层之间的阻挡金属层，并且Cu合金布线可以直接和可靠地连接到半导体层内加工边缘宽在基板侧依次配置半导体层和由纯Cu或Cu合金构成的Cu合金膜。在半导体层和Cu合金膜之间包含层叠结构。层叠结构由（N，C，F）层构成，其含有选自由氮，碳和氟组成的组中的至少一种元素，以及含有Cu和Si的Cu-Si扩散层，这个顺序是从衬底一侧。此外，至少从由氮，碳和氟组成的组中选择的一种元素与包含在半导体层中的Si键合。

34. 发明授权

US07781767B2 Thin film transistor substrate and display device 有权
标题翻译：薄膜晶体管基板和显示装置
公开(公告)号：US07781767B2
公开(公告)日：2010-08-24
申请号：US11743916
申请日：2007-05-03
申请人： Nobuyuki Kawakami , Hiroshi Gotoh , Aya Hino
发明人： Nobuyuki Kawakami , Hiroshi Gotoh , Aya Hino
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L29/458 , H01L29/78609
摘要： Disclosed are a thin film transistor substrate where barrier metal can be omitted to be formed between a semiconductor layer of a thin film transistor and source and drain electrodes (barrier metal need not be formed between the semiconductor layer of the thin film transistor and the source and drain electrodes), and a display device. (1) A thin film transistor substrate has a semiconductor layer of a thin film transistor, a source electrode, a drain electrode, and a transparent conductive film, wherein the substrate has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin film transistor, and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic percent, La of 0.1 to 1.0 atomic percent, and Si of 0.1 to 1.5 atomic percent. (2) A display device has the thin film transistor substrate.
摘要翻译：公开了一种薄膜晶体管基板，其中可以省略在薄膜晶体管的半导体层和源极和漏极之间形成阻挡金属（不需要在薄膜晶体管的半导体层和源极之间形成阻挡金属和在源极之间形成阻挡金属，漏电极）和显示装置。（1）薄膜晶体管基板具有薄膜晶体管，源电极，漏电极和透明导电膜的半导体层，其中，所述基板具有其中源电极和漏电极直接连接到薄膜晶体管的半导体层，源极和漏极包括含有0.1至6.0原子％的Ni，0.1至1.0原子％的La和0.1至1.5原子％的Si的Al合金薄膜。（2）显示装置具有薄膜晶体管基板。

35. 发明申请

US20090004490A1 LAYERED STRUCTURE AND ITS MANUFACTURING METHOD 有权
标题翻译：层状结构及其制造方法
公开(公告)号：US20090004490A1
公开(公告)日：2009-01-01
申请号：US12131493
申请日：2008-06-02
申请人： Hiroshi GOTOU , Mototaka Ochi , Yuichi Taketomi , Nobuyuki Kawakami
发明人： Hiroshi GOTOU , Mototaka Ochi , Yuichi Taketomi , Nobuyuki Kawakami
IPC分类号： B32B15/04 , B05D5/12
CPC分类号： G02F1/136286 , B32B2457/20 , C22C21/00 , G02F2001/136295
摘要： This invention is intended to provide a layered structure in which Al alloy is directly connected to transparent oxide conducting layer without increasing electrical contact resistance between the two, with wiring resistance held low and galvanic corrosion being less likely to occur in developing solution or other electrolyte fluids, and the manufacturing method of such layered structure. The manufacturing method intended to provide such layered structure composed of the Al alloy and the transparent oxide conducting layer directly connected to each other, includes a first process to form the above transparent oxide conducting layer on a substrate, a second process to form, on the transparent oxide conducting layer, an Al alloy layer containing alloy components having less ionization tendency than aluminum, and a third process to heat the above Al alloy layer at a temperature equal to or higher than the temperature at which interchemical compound between aluminum and the above alloy components can be separated out.
摘要翻译：本发明旨在提供一种分层结构，其中Al合金直接连接到透明氧化物导电层，而不增加两者之间的电接触电阻，布线电阻保持较低，并且电镀腐蚀在显影液或其它电解液中不太可能发生，以及这种层状结构体的制造方法。旨在提供由Al合金和直接连接的透明氧化物导电层构成的层状结构的制造方法包括在基板上形成上述透明氧化物导电层的第一工序，透明氧化物导电层，含有比铝离子化倾向小的合金成分的Al合金层，以及在等于或高于铝与上述合金之间的化学化合物的温度的温度下加热上述Al合金层的第三工艺组件可以分离出来。

36. 发明申请

US20070077409A1 Porous substrate with smooth surface and production method thereof 审中-公开
标题翻译：表面光滑的多孔基材及其制备方法
公开(公告)号：US20070077409A1
公开(公告)日：2007-04-05
申请号：US11520738
申请日：2006-09-14
申请人： Takayuki Hirano , Nobuyuki Kawakami , Takeharu Tanaka , Tetsuo Suzuki , Yoshito Fukumoto , Kazuki Nakanishi , Kazuyoshi Kanamori
发明人： Takayuki Hirano , Nobuyuki Kawakami , Takeharu Tanaka , Tetsuo Suzuki , Yoshito Fukumoto , Kazuki Nakanishi , Kazuyoshi Kanamori
IPC分类号： B01J13/00 , B32B3/26 , B01D21/01 , C08J3/02 , C09K3/00
CPC分类号： H05K3/0011 , B32B21/04 , H05K1/024 , H05K1/0306 , H05K2201/0116 , Y10T428/249953 , Y10T428/249969
摘要： The porous substrate, comprises: three-dimensional-network skeletal solid phase inside the substrate, and a skin layer same in quality as the skeletal solid phase formed on at least one surface of the substrate, and a production method thereof, comprising: forming a wet gel having a three-dimensional-network skeletal solid phase and a fluid phase rich in solvent that are separated from each other in a space between a pair of flat plates by sol-gel reaction, removing the solvent in the wet gel by drying, and removing at least one flat plate of the pair of flat plates.
摘要翻译：多孔基材包括：基材内部的三维网状骨架固相，和在基材的至少一个表面上形成的骨架固相质量相同的皮肤层及其制造方法，其特征在于，湿凝胶，其具有通过溶胶 - 凝胶反应在一对平板之间的空间中彼此分离的富含溶剂的三维网络骨架固相和流体相，通过干燥除去湿凝胶中的溶剂，以及去除所述一对平板中的至少一个平板。

37. 发明申请

US20060051970A1 Method for forming porous film and porous film formed by the method 审中-公开
标题翻译：通过该方法形成多孔膜和多孔膜的方法
公开(公告)号：US20060051970A1
公开(公告)日：2006-03-09
申请号：US11219872
申请日：2005-09-07
申请人： Nobuyuki Kawakami , Takayuki Hirano
发明人： Nobuyuki Kawakami , Takayuki Hirano
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695
摘要： A method for forming a porous film includes the precursor film forming step of forming a precursor film containing a mixture of a skeleton material and a pore-forming material, the decomposition step of decomposing the pore-forming material in the precursor film by oxidation in an oxidizing atmosphere, and the extraction step of extracting the decomposed pore-forming material with a supercritical fluid. The pore-forming material may be a surfactant. The surfactant may be decomposed by oxidation in an oxidizing atmosphere at 100 to 150° C.
摘要翻译：形成多孔膜的方法包括：前体膜形成步骤，形成含有骨架材料和成孔材料的混合物的前体膜，分解步骤，通过氧化在前体膜中分解成孔材料氧化气氛和用超临界流体萃取分解的造孔材料的提取步骤。造孔材料可以是表面活性剂。表面活性剂可以在氧化气氛中在100〜150℃下分解。

38. 发明申请

US20060001029A1 Diamond sensor 审中-公开
标题翻译：钻石传感器
公开(公告)号：US20060001029A1
公开(公告)日：2006-01-05
申请号：US11168875
申请日：2005-06-29
申请人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
发明人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
IPC分类号： H01L29/15
CPC分类号： H01L31/028 , G01J1/429 , H01L31/09 , H01L31/1085 , Y02E10/547
摘要： A diamond element is mounted on an insulating base material having a thickness of not more than 3 mm provided with one pair of metal interconnects. In the diamond element, an insulating diamond layer to act as a detection layer is deposited on a substrate, and one pair of interdigitated electrodes are deposited on the surface of this insulating diamond layer. The interdegital electrodes of the diamond element are connected via wires to the metal interconnects deposited on the insulating base material. The insulating base material may transmit ultraviolet radiation to be detected. The diamond sensor is capable of stably detecting ultraviolet radiation even when the distance between a lamp and an irradiation object is short.
摘要翻译：金刚石元件安装在具有一对金属互连件的厚度不大于3mm的绝缘基材上。在金刚石元件中，作为检测层的绝缘金刚石层沉积在基板上，并且在绝缘金刚石层的表面上沉积一对交叉指向的电极。金刚石元件的三角形电极通过导线连接到沉积在绝缘基材上的金属互连。绝缘基材可以透射待检测的紫外线。即使当灯和照射物体之间的距离短时，金刚石传感器也能够稳定地检测紫外线辐射。

39. 发明授权

US06703316B2 Method and system for processing substrate 有权
标题翻译：基板处理方法及系统
公开(公告)号：US06703316B2
公开(公告)日：2004-03-09
申请号：US10132212
申请日：2002-04-26
申请人： Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Nobuyuki Kawakami , Takahiko Ishii , Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Ikuo Mizobata , Takashi Miyake , Ryuji Kitakado
发明人： Yoichi Inoue , Yoshihiko Sakashita , Katsumi Watanabe , Nobuyuki Kawakami , Takahiko Ishii , Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Ikuo Mizobata , Takashi Miyake , Ryuji Kitakado
IPC分类号： H01L21302
CPC分类号： H01L21/02052 , H01L21/67028
摘要： A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying apparatus, and subjecting the substrate to a supercritical drying by a supercritical fluid in the drying apparatus.
摘要翻译：用于处理衬底的方法和系统包括通过在湿法处理设备中将工作液体供应到衬底来进行湿法处理，将非干燥状态的衬底从湿法处理设备转移到干燥设备，并对衬底在干燥装置中通过超临界流体进行超临界干燥。

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