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31. 发明申请

US20110100810A1 CHIP INTEGRATED ION SENSOR 审中-公开
标题翻译：芯片集成离子传感器
公开(公告)号：US20110100810A1
公开(公告)日：2011-05-05
申请号：US13001804
申请日：2009-05-19
申请人： Matthias Merz
发明人： Matthias Merz
IPC分类号： G01N27/414 , H01L29/772 , H01L21/335
CPC分类号： G01N27/227
摘要： A chip integrated ion sensor is provided, which comprises a substrate having arranged thereon an electrolyte insulator semiconductor structure and a reference electrode. In particular, the electrolyte insulator semiconductor (EIS) structure may be formed on a chip already processed, i.e. the EIS structure may be formed in a Back End process on an already formed chip comprising a plurality of formed electronic components. In particular, the ion sensor may be adapted to form an ion concentration sensor, e.g. a pH sensor, i.e. may form a pH sensor. The reference electrode may be a non-polarizable electrode. In particular, the reference electrode may comprise Ag or AgCl as material.
摘要翻译：提供一种芯片集成离子传感器，其包括其上布置有电解质绝缘体半导体结构和参考电极的基板。特别地，可以在已经处理的芯片上形成电解绝缘体半导体（EIS）结构，即EIS结构可以在已经形成的包括多个形成的电子部件的芯片的后端工艺中形成。特别地，离子传感器可以适于形成离子浓度传感器，例如， pH传感器，即可形成pH传感器。参考电极可以是非极化电极。特别地，参考电极可以包括Ag或AgCl作为材料。

32. 发明申请

US20100041988A1 FEEDBACK LOOP FOR FOCUSED ULTRASOUND APPLICATION 审中-公开
标题翻译：用于聚焦超声波应用的反馈环
公开(公告)号：US20100041988A1
公开(公告)日：2010-02-18
申请号：US12442197
申请日：2007-09-19
申请人： Remco H. W. Pijnenburg , Youri V. Ponomarev , Matthias Merz
发明人： Remco H. W. Pijnenburg , Youri V. Ponomarev , Matthias Merz
IPC分类号： A61B8/00 , A61N7/00
CPC分类号： A61B17/2202 , A61B17/2256 , A61B2017/00106
摘要： A method is disclosed using a feedback loop for focused ultrasound application. The method includes the steps of determining a location of a target side within a body using ultrasound waves, applying focused ultrasound waves to the target site, determining a new location of the target site using further ultrasound waves, and adjusting the focused ultrasound waves in response to the new location of the target site.
摘要翻译：公开了一种使用聚焦超声应用的反馈回路的方法。该方法包括以下步骤：使用超声波确定身体内目标侧的位置，向目标位置施加聚焦超声波，使用另外的超声波确定目标位置的新位置，以及响应于调整聚焦超声波到目标网站的新位置。

33. 发明申请

US20100010550A1 BRANCHING THERAPY ELEMENTS AND METHOD OF THEIR INSERTION INTO LIVING TISSUE 审中-公开
标题翻译：分配治疗单元及其入侵组织的方法
公开(公告)号：US20100010550A1
公开(公告)日：2010-01-14
申请号：US12442528
申请日：2007-09-20
申请人： Youri Ponomarev , Matthias Merz , Remco Henricus Wilhelmus Pijnenburg
发明人： Youri Ponomarev , Matthias Merz , Remco Henricus Wilhelmus Pijnenburg
IPC分类号： A61N1/05 , A61M31/00 , A61B19/00
CPC分类号： A61N1/0529 , A61N1/0534
摘要： An implantable medical system for electrical recording and or providing therapy to a plurality of tissue sites without damage to surrounding blood vessels is disclosed comprising: an implant body having a plurality of therapy elements, the elements being hingedly attached at one end to the surface of the body and releasably extendable outward from the surface of the body at the other end; a release mechanism for each of the elements; and a coating material covering the body and the elements; wherein upon dissolution of the coating material after implantation, the release mechanism is capable of causing the elements to extend outward at one end from the surface of the body and into a plurality of tissue sites without damage to the surrounding blood vessels. The method of implanting the system into a body is also disclosed.
摘要翻译：公开了一种用于对多个组织部位进行电记录和/或对周围血管的损伤提供治疗的可植入医疗系统，包括：具有多个治疗元件的植入体，所述元件在一端铰接附接到并且在另一端从主体的表面可释放地向外延伸; 用于每个元件的释放机构; 以及覆盖所述主体和所述元件的涂层材料; 其中，在植入后溶解涂层材料时，释放机构能够使元件在一端从身体的表面向外延伸并且进入多个组织部位而不损坏周围的血管。还公开了将系统植入体内的方法。

34. 发明授权

US09679857B2 Semiconductor device and method including an intertial mass element 有权
公开(公告)号：US09679857B2
公开(公告)日：2017-06-13
申请号：US15266809
申请日：2016-09-15
申请人： Matthias Merz , Youri Victorovitch Ponomarev , Mark van Dal
发明人： Matthias Merz , Youri Victorovitch Ponomarev , Mark van Dal
IPC分类号： H01L23/52 , B81C1/00 , B81B7/02 , G01P15/06 , H01L23/00 , B81C99/00 , B81B7/00 , H01L21/768 , H01L23/522 , H01L23/525 , H01L23/528 , G01P15/08
CPC分类号： H01L23/564 , B81B7/0006 , B81B2201/0235 , B81B2203/0315 , B81B2207/015 , B81C1/00246 , B81C99/005 , B81C2201/013 , B81C2203/0136 , B81C2203/0714 , G01P15/06 , G01P15/0802 , G01P2015/0862 , G01P2015/0877 , H01L21/768 , H01L23/5226 , H01L23/5256 , H01L23/528
摘要： Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.

35. 发明申请

US20170005045A1 SEMICONDUCTOR DEVICE AND METHOD 有权
标题翻译：半导体器件和方法
公开(公告)号：US20170005045A1
公开(公告)日：2017-01-05
申请号：US15266809
申请日：2016-09-15
申请人： Matthias Merz , Youri Victorovitch Ponomarev , Mark van Dal
发明人： Matthias Merz , Youri Victorovitch Ponomarev , Mark van Dal
IPC分类号： H01L23/00 , H01L23/528 , G01P15/06 , B81B7/00 , H01L23/525 , H01L21/768 , H01L23/522 , B81C1/00
CPC分类号： H01L23/564 , B81B7/0006 , B81B2201/0235 , B81B2203/0315 , B81B2207/015 , B81C1/00246 , B81C99/005 , B81C2201/013 , B81C2203/0136 , B81C2203/0714 , G01P15/06 , G01P15/0802 , G01P2015/0862 , G01P2015/0877 , H01L21/768 , H01L23/5226 , H01L23/5256 , H01L23/528
摘要： Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.
摘要翻译：公开了一种半导体器件，其包括由电介质层分隔的图案化金属层的堆叠，所述堆叠包括第一导电支撑结构和第二导电支撑结构以及空腔，其中包括至少一个金属部分的惯性质量元件导电耦合到所述第一支撑结构和所述第二支撑结构由相应的导电连接部分组成，所述导电连接部分中的至少一个设计成使所述惯性质量元件断裂，所述加速力超过由所述导电连接部分的尺寸限定的阈值。还公开了制造这种半导体器件的方法。

36. 发明授权

US08925371B2 Sensor 有权
标题翻译：传感器
公开(公告)号：US08925371B2
公开(公告)日：2015-01-06
申请号：US13382726
申请日：2010-07-16
申请人： Aurelie Humbert , Youri Victorovitch Ponomarev , Roel Daamen , Matthias Merz
发明人： Aurelie Humbert , Youri Victorovitch Ponomarev , Roel Daamen , Matthias Merz
IPC分类号： G01N7/00 , G01N19/10 , G01N27/22 , G01N33/00
CPC分类号： G01N27/223 , G01N33/004
摘要： A sensor (2) for sensing a first substance and a second substance, the sensor comprising first (3) and second (5) sensor components each comprising a first material (20), the first material being sensitive to both the first substance and the second substance, the sensor further comprising a barrier (18) for preventing the second substance from passing into the second sensor component (5).
摘要翻译：一种用于感测第一物质和第二物质的传感器（2），所述传感器包括第一（3）和第二（5）个传感器部件，每个传感器部件包括第一材料（20），所述第一材料对第一物质和第二物质，传感器还包括用于防止第二物质进入第二传感器部件（5）的阻挡层（18）。

37. 发明授权

US08864968B2 Electrochemical sensor 有权
标题翻译：电化学传感器
公开(公告)号：US08864968B2
公开(公告)日：2014-10-21
申请号：US12858353
申请日：2010-08-17
申请人： Matthias Merz , Youri Victorovitch Ponomarev
发明人： Matthias Merz , Youri Victorovitch Ponomarev
IPC分类号： G01N27/333 , G01N27/416 , G01N27/414
CPC分类号： G01N27/4167 , G01N27/333 , G01N27/414 , Y10T29/4913
摘要： An electrochemical sensor device including a sensor chip having an integrated electrochemical sensor element; and a substrate having a first surface on which the sensor chip is mounted, the substrate comprising a reference electrode structure for the integrated electrochemical sensor element, the reference electrode structure connected to the sensor chip via an electrical connection on the first surface of the substrate.
摘要翻译：一种电化学传感器装置，包括具有集成的电化学传感器元件的传感器芯片; 以及基板，其具有安装有传感器芯片的第一表面，所述基板包括用于所述一体化电化学传感器元件的参考电极结构，所述参考电极结构通过所述基板的第一表面上的电连接连接到所述传感器芯片。

38. 发明申请

US20130032903A1 INTEGRATED CIRCUIT WITH SENSOR AND METHOD OF MANUFACTURING SUCH AN INTEGRATED CIRCUIT 审中-公开
公开(公告)号：US20130032903A1
公开(公告)日：2013-02-07
申请号：US13556926
申请日：2012-07-24
申请人： Matthias Merz , Aurelie Humbert , Roel Daamen , David Tio Castro
发明人： Matthias Merz , Aurelie Humbert , Roel Daamen , David Tio Castro
IPC分类号： H01L29/66 , H01L21/02
CPC分类号： G01N27/128 , G01N25/18 , G01N27/121 , G01N27/125 , G01N27/22 , G01N33/004 , G01N33/18 , G01N33/1826 , H01L2224/73265 , H01L2224/92247 , H01L2924/1461 , H01L2924/00
摘要： Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12, 14, 16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24, 26, 28) covering the metallization stack; a gas sensor including a sensing material portion (32, 74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.

39. 发明申请

US20110301903A1 SENSOR CALIBRATION IN AN RFID TAG 审中-公开
标题翻译： RFID标签中的传感器校准
公开(公告)号：US20110301903A1
公开(公告)日：2011-12-08
申请号：US12992824
申请日：2009-04-30
申请人： Arelie Humbert , Gilbert Curatola , Matthias Merz , Remco Henricus Wilhelmus Pijenburg , Romano Hoofman , Youri Ponomarev
发明人： Arelie Humbert , Gilbert Curatola , Matthias Merz , Remco Henricus Wilhelmus Pijenburg , Romano Hoofman , Youri Ponomarev
IPC分类号： G01D18/00
CPC分类号： G01D18/008 , G01K1/024 , G01K3/04 , G01K15/00
摘要： A sensor, electrically connected to transponder, is calibrated in an environment of operational use of the transponder. The calibrating uses as a reference a value of a parameter representative of the environment.
摘要翻译：电连接到应答器的传感器在应答器的操作使用环境中被校准。校准使用代表环境的参数的值作为参考。

40. 发明申请

US20110207239A1 BICOMPATIBLE ELECTRODES 有权
标题翻译： BICOMPATIBLE电极
公开(公告)号：US20110207239A1
公开(公告)日：2011-08-25
申请号：US13126057
申请日：2009-10-26
申请人： Roel Daamen , Matthias Merz
发明人： Roel Daamen , Matthias Merz
IPC分类号： H01L21/283
CPC分类号： H01L21/76849 , H01L21/32134 , H01L21/7684 , H01L21/76883
摘要： A biocompatible electrode is manufactured by depositing filling metal 36 and etching back the filling metal to the surface of the surrounding insulator 30. Then, a further etch forms a recess 38 at the top of the via 32. An electrode metal 40 is then deposited and etched back to fill the recess 38 and form biocompatible electrode 42. In this way, a planar biocompatible electrode is achieved. The step of etching to form the recess may be carried out in the same CMP tool as is used to etch back the filling metal 36. A hydrogen peroxide etch may be used.
摘要翻译：通过沉积填充金属36并将填充金属蚀刻回到周围绝缘体30的表面来制造生物相容性电极。然后，另外的蚀刻在通孔32的顶部形成凹部38.然后沉积电极金属40，回蚀以填充凹部38并形成生物相容性电极42.以这种方式，实现平面生物相容性电极。蚀刻形成凹部的步骤可以在与用于回填填充金属36相同的CMP工具中进行。可以使用过氧化氢蚀刻。

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