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31. 发明授权

US07002150B2 Thin specimen producing method and apparatus 有权
标题翻译：薄标本制造方法和装置
公开(公告)号：US07002150B2
公开(公告)日：2006-02-21
申请号：US10854868
申请日：2004-05-27
申请人： Kouji Iwasaki , Yutaka Ikku
发明人： Kouji Iwasaki , Yutaka Ikku
IPC分类号： G21K7/00
CPC分类号： G01N1/32 , H01J2237/3174
摘要： A thin specimen producing method acquires a work amount in a 1-line scan by an FIB under a predetermined condition, measures a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, determines a required number of scan lines of work to reach a predetermined width by calculation, and executes a work to obtain a set thickness. The work amount in a one-line scan by the FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and calculating an average work amount per one-line scan.
摘要翻译：薄标本制作方法通过FIB在预定条件下获取1行扫描中的工作量，通过微观长度测量功能测量样品上表面上的薄膜的剩余工作宽度，确定所需的通过计算达到预定宽度的扫描线的数量，并执行获得设定厚度的工作。通过FIB在预定条件下的单行扫描中的工作量通过在多行扫描中进行样品的工作，通过微观长度测量功能测量蚀刻尺寸并计算每行的平均工作量来确定扫描

32. 发明申请

US20080265158A1 CHARGED PARTICLE BEAM APPARATUS 审中-公开
标题翻译：充电颗粒光束装置
公开(公告)号：US20080265158A1
公开(公告)日：2008-10-30
申请号：US12104160
申请日：2008-04-16
申请人： Kouji Iwasaki
发明人： Kouji Iwasaki
IPC分类号： G01N23/00
CPC分类号： G01N23/2251 , H01J37/302 , H01J37/3056 , H01J2237/0203 , H01J2237/20 , H01J2237/304 , H01J2237/3174
摘要： A charged particle beam instrument is offered which comprises an irradiation mechanism for irradiating a sample with a charged particle beam (FIB/EB), a detection mechanism for detecting secondary charged particles produced by the irradiation by the charged particle beam, a storage portion for previously storing three-dimensional data about the irradiation mechanism and detection mechanism in an interrelated manner to the stage coordinate system W, a conversion portion for converting three-dimensional data about the sample into the stage coordinate system, and a decision portion for simulating the positional relationships among the sample, irradiation mechanism, and detection mechanism based on data converted by the conversion portion and on data stored in the storage portion when a certain position on the sample is placed into a measurement point and for previously making a decision as to whether the sample will interfere and making a report of the result of the decision.
摘要翻译：提供一种带电粒子束仪器，其包括用于用带电粒子束（FIB / EB）照射样品的照射机构，用于检测由带电粒子束照射产生的二次带电粒子的检测机构，用于预先以相关方式存储关于照射机构和检测机构的三维数据到舞台坐标系W，将关于样本的三维数据转换成舞台坐标系的转换部分，以及用于模拟位置关系的判定部分当样本中的某个位置被放入测量点时，基于由转换部分转换的数据和存储在存储部分中的数据的样本，照射机制和检测机制，并且用于先前作出关于样本将干预并作出决定结果的报告。

33. 发明授权

US07267731B2 Method and system for fabricating three-dimensional microstructure 有权
标题翻译：制造三维微结构的方法和系统
公开(公告)号：US07267731B2
公开(公告)日：2007-09-11
申请号：US10712147
申请日：2003-11-13
申请人： Kouji Iwasaki
发明人： Kouji Iwasaki
IPC分类号： C21D1/54
CPC分类号： C23C16/047 , B33Y50/02 , H01J37/3023 , H01J2237/30411 , H01J2237/31737 , H01J2237/3174 , H01J2237/31749
摘要： A method of fabricating a three-dimensional microstructure provides data corresponding to information relating to the structure of a three-dimensional microstructure design. A sample is processed in accordance with the provided data by irradiating the sample with a charged-particle beam while controlling processing conditions of the charged-particle beam. Dimensions of the processed sample are compared with the provided data to identify differences between the structure of the processed sample and the structure of the three-dimensional microstructure design. The sample is then irradiated again with a charged-particle beam to correct the identified structural differences while adjusting the processing conditions of the charged-particle beam to thereby fabricate a three-dimensional microstructure having a structure substantially the same as the structure of the three-dimensional microstructure design.
摘要翻译：制造三维微结构的方法提供对应于与三维微结构设计的结构有关的信息的数据。在控制带电粒子束的处理条件的同时，通过用带电粒子束照射样品，根据提供的数据处理样品。将处理过的样品的尺寸与提供的数据进行比较，以识别经处理样品的结构与三维微结构设计的结构之间的差异。然后再次用带电粒子束照射样品以校正所识别的结构差异，同时调节带电粒子束的处理条件，从而制造具有与三维结构基本相同的结构的三维微结构，尺寸微结构设计。

34. 发明申请

US20050211922A1 Minute three dimensional structure producing apparatus and method 审中-公开
标题翻译：分钟三维结构制作装置及方法
公开(公告)号：US20050211922A1
公开(公告)日：2005-09-29
申请号：US11086492
申请日：2005-03-22
申请人： Masanao Munekane , Kouji Iwasaki
发明人： Masanao Munekane , Kouji Iwasaki
IPC分类号： B81C99/00 , A61N5/00 , B82B3/00 , G21G5/00 , H01J37/30 , H01J37/31 , H01J37/317
CPC分类号： H01J37/20 , B23K15/08 , B23P15/32 , B81C99/0095 , B81C2201/0143 , H01J37/3056 , H01J37/31 , H01J2237/20214 , H01J2237/206 , H01J2237/31732 , H01J2237/31735 , H01J2237/3174
摘要： A structure having arbitrary rotational symmetry is produced by attaching a sample stage (turntable) to a precision rotational shaft that is continuously rotated as high precision, performing FIB deposition inside an FIB chamber while causing continuous rotation of the sample stage, or performing cut-way processing from a side surface or upper surface, like a general purpose lathe, using FIB etching.
摘要翻译：具有任意旋转对称性的结构通过将样品台（转盘）附接到精度高的连续旋转的精密旋转轴上，在FIB室内进行FIB沉积，同时使样品台连续旋转，或进行切割使用FIB蚀刻从侧表面或上表面加工，如通用车床。

35. 发明申请

US20050035306A1 Focused charged particle beam apparatus 审中-公开
标题翻译：聚焦带电粒子束装置
公开(公告)号：US20050035306A1
公开(公告)日：2005-02-17
申请号：US10635958
申请日：2003-08-07
申请人： Kouji Iwasaki
发明人： Kouji Iwasaki
IPC分类号： G03F1/20 , G03F1/72 , G03F1/74 , G03F7/20 , H01J37/20 , H01J37/31 , H01J37/317 , H01L21/027
CPC分类号： H01J37/20 , H01J37/3056 , H01J2237/20207 , H01J2237/20221 , H01J2237/31744 , H01J2237/31749
摘要： In order to enable perpendicular processing of a slice in all directions about a lens optical axis, a focused charged particle beam of the present invention is provided with a tilt mechanism capable of tilting in two axial directions below a three dimensional X, Y, Z drive mechanism, as sample stage drive means. In this way, when carrying out correction processing of a clear defect of a penetrating structure in an electron beam exposure mask, it is possible to accurately carry out perpendicular processing of pattern surfaces in all directions.
摘要翻译：为了能够围绕透镜光轴在所有方向上进行切片的垂直处理，本发明的聚焦带电粒子束设置有能够在三维X，Y，Z驱动下的两个轴向倾斜的倾斜机构机制，作为样品台驱动装置。以这种方式，当进行电子束曝光掩模中的穿透结构的清晰缺陷的校正处理时，可以精确地执行图案表面在所有方向上的垂直处理。

36. 发明授权

US06593583B2 Ion beam processing position correction method 有权
标题翻译：离子束加工位置校正方法
公开(公告)号：US06593583B2
公开(公告)日：2003-07-15
申请号：US09754649
申请日：2001-03-22
申请人： Kouji Iwasaki
发明人： Kouji Iwasaki
IPC分类号： H01J3708
CPC分类号： G01N23/20 , H01J2237/30438 , H01J2237/30455 , H01J2237/31732 , H01J2237/3174 , H01J2237/31749
摘要： The present invention provides a focused ion beam method in which positional correction is performed with reference to reference points on a sample and for carrying out processing using an ion beam, in which reference point conformation does not take up a lot of time, and which is capable of accurate fine processing. The present invention performs high precision processing with correction performed at short intervals using reference mark confirmation when fine processing requiring accuracy is performed, while positional correction is carried out at long intervals when accuracy is not required, which means there is no wasted time because inefficient correction processing is omitted.
摘要翻译：本发明提供了一种聚焦离子束方法，其中参考样品上的参考点进行位置校正，并且使用离子束进行处理，其中参考点构象不占用大量时间，并且哪个是能够精确加工。本发明在进行精细处理要求精度的同时，以短时间间隔进行校正，进行高精度处理，同时在不需要精度的情况下以长间隔进行位置校正，这意味着由于无效校正而没有浪费时间省略处理。

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