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31. 发明申请

US20120075614A1 EXPOSURE METHOD AND STORAGE MEDIUM 有权
标题翻译：曝光方法和储存介质
公开(公告)号：US20120075614A1
公开(公告)日：2012-03-29
申请号：US13224488
申请日：2011-09-02
申请人： Yuichi GYODA , Kouichirou TSUJITA
发明人： Yuichi GYODA , Kouichirou TSUJITA
IPC分类号： G03B27/32
CPC分类号： G03F7/706 , G03F7/705
摘要： The present invention provides an exposure method including the steps of generating a plurality of element light sources formed on a pupil plane of an illumination optical system, setting a plurality of aberration states which are expected to exist in a projection optical system, calculating, for each of all combinations of the plurality of aberration states and the plurality of element light sources, an optical image of a pattern of a mask, which is formed in an evaluation area when one aberration state among the plurality of aberration states is produced in the projection optical system, and the pattern of the mask is illuminated with one element light source among the plurality of element light sources, determining, based on the calculated optical images, as a light intensity distribution to be formed on the pupil plane, a light source obtained by combining the plurality of element light sources applied with weights.
摘要翻译：本发明提供了一种曝光方法，包括以下步骤：产生形成在照明光学系统的光瞳平面上的多个元件光源，设置预期存在于投影光学系统中的多个像差状态，在多个像差状态和多个元素光源的所有组合中，在投影光学器件中产生在多个像差状态中的一个像差状态时形成在评估区域中的掩模图案的光学图像系统，并且在多个元件光源中用一个元件光源照射掩模的图案，基于计算出的光学图像，确定要在瞳孔平面上形成的光强度分布，由组合施加有重物的多个元件光源。

32. 发明授权

US08049191B2 Method of transferring pattern of reticle, computer readable storage medium, and method of manufacturing device 有权
标题翻译：传送标线图形，计算机可读存储介质的方法和制造装置的方法
公开(公告)号：US08049191B2
公开(公告)日：2011-11-01
申请号：US12607015
申请日：2009-10-27
申请人： Kouichirou Tsujita , Koji Mikami , Hiroyuki Ishii
发明人： Kouichirou Tsujita , Koji Mikami , Hiroyuki Ishii
IPC分类号： G21K5/10
CPC分类号： G03F7/70141 , G03F7/705 , G03F7/70625
摘要： A method includes setting a target pattern to be formed on a substrate using a reticle, obtaining a first pattern using the reticle and a first illumination condition, calculating, a second illumination condition under which the target pattern is transferred onto the substrate using the reticle, and a third illumination condition under which the first pattern is transferred onto a substrate using the reticle, using mathematical models each of which defines the relationship between an illumination condition and a virtual pattern transferred onto a substrate using the illumination condition, determining a fourth illumination condition, obtained by adding the difference between the calculated second illumination condition and third illumination condition to the first illumination condition, as the illumination condition, and transferring the pattern of the reticle onto the substrate by illuminating the reticle using the determined illumination condition.
摘要翻译：一种方法包括使用标线设置在基板上形成的目标图案，使用所述掩模版获得第一图案和第一照明条件，计算使用所述掩模版将所述目标图案转印到所述基板上的第二照明条件，以及第三照明条件，在该第三照明条件下，使用数学模型将第一图案转印到基板上，每个数学模型使用照明条件限定照明条件和转印到基板上的虚拟图案之间的关系，确定第四照明条件通过将计算出的第二照明条件和第三照明条件之间的差与第一照明条件相加而获得，作为照明条件，并且通过使用确定的照明条件照射标线，将掩模版的图案转印到基板上。

33. 发明申请

US20110107277A1 RECORDING MEDIUM AND DETERMINATION METHOD 有权
标题翻译：记录介质和测定方法
公开(公告)号：US20110107277A1
公开(公告)日：2011-05-05
申请号：US12609830
申请日：2009-10-30
申请人： Kouichirou Tsujita , Axelrad Valery
发明人： Kouichirou Tsujita , Axelrad Valery
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70125 , G03F7/70441
摘要： The present invention provides a computer-readable recording medium recording a program for causing a computer to execute a method of determining a pattern of a mask and an effective light source distribution with which the mask is illuminated, both of which are used for an exposure apparatus including an illumination optical system which illuminates a mask with light from a light source and a projection optical system which projects a pattern of the mask onto a substrate.
摘要翻译：本发明提供了一种计算机可读记录介质，其记录用于使计算机执行确定掩模的图案的方法和掩模被照射的有效光源分布的程序的程序，两者都用于曝光装置包括用来自光源的光照射掩模的照明光学系统和将掩模的图案投影到基板上的投影光学系统。

34. 发明申请

US20070013896A1 EXPOSURE METHOD 有权
标题翻译：曝光方法
公开(公告)号：US20070013896A1
公开(公告)日：2007-01-18
申请号：US11457233
申请日：2006-07-13
申请人： Kouichirou Tsujita
发明人： Kouichirou Tsujita
IPC分类号： G03B27/32
CPC分类号： G03B27/32
摘要： An exposure method for exposing a pattern of a reticle which includes a first pattern and a second pattern by using a light from a light source and an optical system includes the steps of obtaining information relating to the first pattern and plural types of representative patterns that can be used for the second pattern, and setting, for the first pattern and the plural types of representative patterns, (i) at least one exposure parameter of the light source and the optical system or (ii) a size or shape of the first pattern and the plural types of representative patterns.
摘要翻译：通过使用来自光源和光学系统的光来曝光包括第一图案和第二图案的掩模版图案的曝光方法包括以下步骤：获得与第一图案有关的信息和可以具有多种类型的代表图案用于第二图案，并且对于第一图案和多种类型的代表图案设置（i）光源和光学系统的至少一个曝光参数或（ii）第一图案的尺寸或形状和多种类型的代表性模式。

35. 发明授权

US06916749B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06916749B2
公开(公告)日：2005-07-12
申请号：US10384572
申请日：2003-03-11
申请人： Kouichirou Tsujita , Akihiro Nakae
发明人： Kouichirou Tsujita , Akihiro Nakae
IPC分类号： H01L21/28 , H01L21/027 , H01L21/3213 , H01L21/31
CPC分类号： H01L21/32139 , H01L21/0276
摘要： A multilayer structure which provides for optimization of a configuration of a patterned photoresist is designed. A multilayer structure (20) includes polysilicon (10), a silicon oxide film (11) and an anti-reflective film (12) which are deposited sequentially in the order noted, and a photoresist (13) is provided on the anti-reflective film (12), so that light for exposure is incident on the multilayer structure (20) through the photoresist (13). First, as a step (i), a range of thickness of the silicon oxide film (11) is determined so as to allow an absolute value of a reflection coefficient of the light for exposure at an interface between the anti-reflective film (12) and the photoresist (13) to be equal to or smaller than a first value. Subsequently, as a step (ii), the range of thickness of the silicon oxide film (11) determined in the step (i) is delimited so as to allow an absolute value of a phase of the reflection coefficient to be equal to or larger than a second value.
摘要翻译：设计了提供图案化光致抗蚀剂的配置优化的多层结构。多层结构（20）包括按顺序依次沉积的多晶硅（10），氧化硅膜（11）和抗反射膜（12），并且抗反射膜使得用于曝光的光通过光致抗蚀剂（13）入射到多层结构（20）上。首先，作为步骤（i），确定氧化硅膜（11）的厚度范围，以便允许抗反射膜（12）之间的界面处的曝光用光的反射系数的绝对值）和光致抗蚀剂（13）等于或小于第一值。随后，作为步骤（ii），限定在步骤（i）中确定的氧化硅膜（11）的厚度范围，以使反射系数的相位的绝对值等于或大于比第二个值。

36. 发明授权

US5902702A Phase shift mask, blank for phase shift mask, and method of manufacturing phase shift mask 失效
标题翻译：相移掩模，相移掩模的空白和相移掩模的制造方法
公开(公告)号：US5902702A
公开(公告)日：1999-05-11
申请号：US745556
申请日：1996-11-12
申请人： Shuji Nakao , Kouichirou Tsujita , Tatsunori Kaneoka
发明人： Shuji Nakao , Kouichirou Tsujita , Tatsunori Kaneoka
IPC分类号： G03F1/00 , G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00 , B32B9/00
CPC分类号： G03F1/72 , G03F1/30
摘要： A silicon nitride film and a silicon oxide film are deposited on a transparent substrate 1 to cover a first light transmitting region and to expose a second light transmitting region. A light blocking film is formed in a light blocking region sandwiched between the first and the second light transmitting regions Ta and Tn to cover the transparent substrate 1. A phase shift mask, a blank for a phase shift mask, and a method of manufacturing a phase shift mask are accordingly obtained in which the phase difference of the light transmitted through the light transmitting regions adjacent to each other with the light blocking film interposed is substantially 180.degree. and the intensity of each transmitting light is identical.
摘要翻译：在透明基板1上沉积氮化硅膜和氧化硅膜以覆盖第一透光区域并露出第二透光区域。在夹在第一和第二透光区域Ta和Tn之间的遮光区域中形成遮光膜以覆盖透明基板1.相移掩模，用于相移掩模的坯料，以及制造方法因此得到相位移掩模，其中通过夹持有遮光膜的彼此相邻的透光区域的光的相位差基本上为180°，每个透射光的强度相同。

37. 发明授权

US5783365A Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5783365A
公开(公告)日：1998-07-21
申请号：US561851
申请日：1995-11-22
申请人： Kouichirou Tsujita
发明人： Kouichirou Tsujita
IPC分类号： G03F7/11 , G03F7/004 , G03F7/09 , G03F7/16 , H01L21/027 , G03C5/00
CPC分类号： G03F7/09 , G03F7/16 , G03F7/0045
摘要： To present a manufacturing method of semiconductor device capable of preventing deactivation phenomenon of acid of chemically amplified resist when the foundation layer is a silicon nitride film, and obtaining a favorable resist shape, and enhanced in stability of resist patter. A silicon nitride film (3) is exposed to an oxygen atmosphere at 800.degree. to 1200.degree. C., and a thermal oxide film (4) in a thickness of about 40 to 50 angstroms (4 to 5 nm) is formed on the silicon nitride film (3), and then a resist layer (5) is formed. It hence eliminates the problems of instability of dimensions and shape of the silicon nitride film due to tail or under-cut formed in the sectional shape of the resist layer, and simultaneously solves the problem of instability of the resist pattern by peeling of the resist layer due to deterioration of adhesion between the resist layer and silicon nitride film.
摘要翻译：提出一种当基底层为氮化硅膜时能够防止化学放大抗蚀剂的酸失活现象的半导体器件的制造方法，获得良好的抗蚀剂形状，并提高抗蚀剂图案的稳定性。将氮化硅膜（3）暴露于800℃〜1200℃的氧气氛中，在硅上形成厚度约40〜50埃（4〜5nm）的热氧化膜（4）氮化物膜（3），然后形成抗蚀剂层（5）。因此消除了由于在抗蚀剂层的截面形状中形成的尾部或底切而导致的氮化硅膜的尺寸和形状的不稳定性的问题，并且通过剥离抗蚀剂层来解决抗蚀剂图案的不稳定性的问题由于抗蚀剂层和氮化硅膜之间的粘附性的劣化。

38. 发明授权

US5547813A Method of forming a fine resist pattern of high resolution using a contrast enhancement layer 失效
标题翻译：使用对比度增强层形成高分辨率的精细抗蚀剂图案的方法
公开(公告)号：US5547813A
公开(公告)日：1996-08-20
申请号：US40195
申请日：1993-03-31
申请人： Kouichirou Tsujita
发明人： Kouichirou Tsujita
IPC分类号： H01L21/302 , G03F7/09 , H01L21/027 , H01L21/3065 , G03C5/00
CPC分类号： G03F7/091
摘要： The present invention provides a method of forming a fine resist pattern using a contrast enhancement layer improved so that the dimension accuracy of patterning is improved regardless of difference in resist film thickness according to position. A resist is formed on a substrate. A middle layer having the index of refraction adjusted to 1.3 to 1.4 is formed on the resist to prevent the contrast enhancement layer and the resist from being mixed. A contrast enhancement layer is formed on the middle layer. Light is selectively directed towards the resist from above the contrast enhancement layer. Then, the contrast enhancement layer and the middle layer are removed, followed by development of the resist.
摘要翻译：本发明提供一种使用改善了对比度增强层形成精细抗蚀剂图案的方法，使得根据位置的抗蚀剂膜厚度的差异，提高了图案的尺寸精度。在基板上形成抗蚀剂。在抗蚀剂上形成折射率为1.3〜1.4的中间层，防止对比度增强层和抗蚀剂混合。中间层形成对比增强层。光从对比度增强层的上方选择性地朝向抗蚀剂。然后，去除对比度增强层和中间层，随后开发抗蚀剂。

39. 发明授权

US5488246A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5488246A
公开(公告)日：1996-01-30
申请号：US229273
申请日：1994-04-18
申请人： Yoshio Hayashide , Kouichirou Tsujita
发明人： Yoshio Hayashide , Kouichirou Tsujita
IPC分类号： G03F7/11 , H01L21/027 , H01L21/311 , H01L21/318 , H01L23/532 , H01L27/12
CPC分类号： H01L21/31105 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device and method of manufacturing the same includes the steps of forming silicon nitride films including much silicon than a stoichiometric silicon nitride (Si.sub.3 N.sub.4) and which will be an anti-reflection film, forming a resist film on the plasma silicon nitride films and, and concurrently patterning plasma silicon nitride films and conductive layers and using the resist film as a mask. As a result, high integration of the semiconductor device can be attained.
摘要翻译：半导体器件及其制造方法包括以下步骤：形成包含比化学计量氮化硅（Si 3 N 4）多的硅的氮化硅膜，并且其将是抗反射膜，在等离子体氮化硅膜上形成抗蚀剂膜，并且同时构图等离子体氮化硅膜和导电层，并使用抗蚀剂膜作为掩模。结果，可以实现半导体器件的高集成度。

40. 发明授权

US08739079B2 Recording medium and determination method 有权
标题翻译：记录介质和测定方法
公开(公告)号：US08739079B2
公开(公告)日：2014-05-27
申请号：US12609830
申请日：2009-10-30
申请人： Kouichirou Tsujita , Axelrad Valery
发明人： Kouichirou Tsujita , Axelrad Valery
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70125 , G03F7/70441
摘要： The present invention provides a computer-readable recording medium recording a program for causing a computer to execute a method of determining a pattern of a mask and an effective light source distribution with which the mask is illuminated, both of which are used for an exposure apparatus including an illumination optical system which illuminates a mask with light from a light source and a projection optical system which projects a pattern of the mask onto a substrate.
摘要翻译：本发明提供了一种计算机可读记录介质，其记录用于使计算机执行确定掩模的图案的方法和掩模被照射的有效光源分布的程序的程序，两者都用于曝光装置包括用来自光源的光照射掩模的照明光学系统和将掩模的图案投影到基板上的投影光学系统。

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