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1. 发明授权

US09551926B2 Determination method, storage medium and information processing apparatus 有权
标题翻译：确定方法，存储介质和信息处理设备
公开(公告)号：US09551926B2
公开(公告)日：2017-01-24
申请号：US13534059
申请日：2012-06-27
申请人： Yuichi Gyoda , Koji Mikami , Kouichirou Tsujita
发明人： Yuichi Gyoda , Koji Mikami , Kouichirou Tsujita
IPC分类号： G03B27/68 , G03F1/50 , G03F7/20
CPC分类号： G03F1/50 , G03F7/705
摘要： The present invention provides a determination method of determining exposure conditions of an exposure apparatus including an illumination optical system which illuminates a mask, and a projection optical system which projects a pattern of the mask onto a substrate, the method including a step of setting an illumination parameter for a light intensity distribution formed on a pupil plane of the illumination optical system, and an aberration parameter for an aberration of the projection optical system, and a step of determining a value of the illumination parameter and a value of the aberration parameter so that an image performance of an optical image of the pattern of the mask satisfies an evaluation criterion set for a target pattern to be formed on an image plane of the projection optical system.
摘要翻译：本发明提供了一种确定曝光条件的曝光条件的方法，所述曝光装置包括照明掩模的照明光学系统和投影光学系统，所述投影光学系统将掩模的图案投影到基板上，所述方法包括设置照明用于形成在照明光学系统的光瞳平面上的光强度分布的参数，以及投影光学系统的像差的像差参数，以及确定照明参数的值和像差参数的值的步骤，使得掩模图案的光学图像的图像性能满足为在投影光学系统的图像平面上形成的目标图案设定的评价标准。

2. 发明授权

US09448495B2 Resist pattern calculation method and calculation program storage medium 有权
标题翻译：抗蚀图案计算方法和计算程序存储介质
公开(公告)号：US09448495B2
公开(公告)日：2016-09-20
申请号：US13233209
申请日：2011-09-15
申请人： Ryo Nakayama , Kouichirou Tsujita , Koji Mikami , Hiroyuki Ishii
发明人： Ryo Nakayama , Kouichirou Tsujita , Koji Mikami , Hiroyuki Ishii
IPC分类号： G03B27/32 , G03F7/20
CPC分类号： G03F7/705 , G03F7/70558 , G03F7/70608
摘要： A recording medium stores a program for causing a computer to execute a method of calculating a resist pattern. The method includes: a first step of calculating a light intensity distribution of an optical image formed on the resist, based on the reticle pattern and an exposure condition; a second step of convoluting, using a first diffusion length, the calculated light intensity distribution; a third step of calculating a representative light intensity from the calculated light intensity distribution or the convoluted light intensity distribution; a fourth step of correcting the convoluted light intensity distribution by adding, to the convoluted light intensity distribution, a correction function including a first function given by: { ∑ k = 0 n ⁢ ( a k ⁢ J k ) } ⁢ exp ⁡ ( - α ⁢ ⁢ J ) where J is the distribution of the representative light intensity; and a fifth step of calculating the resist pattern based on the corrected light intensity distribution and a slice level set in advance.

3. 发明授权

US09036897B2 Storage medium storing computer program for determining at least one of exposure condition and mask pattern 有权
标题翻译：存储介质，存储用于确定曝光条件和掩模图案中的至少一个的计算机程序
公开(公告)号：US09036897B2
公开(公告)日：2015-05-19
申请号：US13032960
申请日：2011-02-23
申请人： Hiroyuki Ishii , Yuichi Gyoda , Koji Mikami , Kouichirou Tsujita
发明人： Hiroyuki Ishii , Yuichi Gyoda , Koji Mikami , Kouichirou Tsujita
IPC分类号： G06K9/00 , G03F7/20
CPC分类号： G03F7/709 , G03F7/70091 , G03F7/70358 , G03F7/705 , G03F7/70525
摘要： A computer readable storage medium is provided, storing a computer-executable program for causing a computer to determine at least one of mask pattern and exposure condition of an exposure apparatus having an illumination optical system for illuminating a mask with light from a light source and a projection optical system for projecting the mask pattern onto a substrate. The program causes the computer to perform calculation of an image of a pattern on an object plane of the projection optical system using information about lateral shift of an image caused by the exposure apparatus, and determination of at least one of the exposure condition and the mask pattern based on a calculation result.
摘要翻译：提供了一种计算机可读存储介质，其存储用于使计算机确定具有照明光学系统的曝光装置的掩模图案和曝光条件中的至少一个的计算机可执行程序，所述照明光学系统用于从光源和用于将掩模图案投影到基板上的投影光学系统。该程序使计算机使用关于由曝光装置引起的图像的横向偏移的信息来执行投影光学系统的物体平面上的图案的图像的计算，以及确定曝光条件和掩模中的至少一个基于计算结果的模式。

4. 发明授权

US08582083B2 Effective light source shape database generation method, optical image calculation method, recording medium, exposure method, and device fabrication method 有权
标题翻译：有效的光源形状数据库生成方法，光学图像计算方法，记录介质，曝光方法和器件制造方法
公开(公告)号：US08582083B2
公开(公告)日：2013-11-12
申请号：US12369472
申请日：2009-02-11
申请人： Hiroto Yoshii , Kouichirou Tsujita , Koji Mikami
发明人： Hiroto Yoshii , Kouichirou Tsujita , Koji Mikami
IPC分类号： G03B27/54
CPC分类号： G03F7/70108 , G03F7/70091 , G03F7/70508
摘要： The present invention provides a method of generating a database of effective light source shapes including a generation step of generating an initial database representing an effective light source shapes corresponding to a plurality of conditions settable for an illumination optical system, a measurement step of setting an arbitrary condition for the illumination optical system, and measuring an effective light source shape, a calculation step of calculating a difference amount between an effective light source shape when each of the plurality of conditions is set for the illumination optical system and the effective light source shape included in the initial database, and a correction step of correcting the effective light source shapes included in the initial database using the difference amounts and compiling the corrected effective light source shapes into an actual database.
摘要翻译：本发明提供了一种生成有效光源形状的数据库的方法，包括生成步骤，生成表示与可设置于照明光学系统的多个条件对应的有效光源形状的初始数据库的生成步骤，设定任意的测量步骤照明光学系统的条件和有效光源形状的测量;计算步骤，当对照明光学系统设定多个条件和有效光源形状时，计算有效光源形状之间的差异量在初始数据库中，以及校正步骤，用差异量校正包含在初始数据库中的有效光源形状，并将校正的有效光源形状编译成实际的数据库。

5. 发明申请

US20130010272A1 DETERMINATION METHOD, STORAGE MEDIUM AND INFORMATION PROCESSING APPARATUS 有权
标题翻译：确定方法，存储介质和信息处理设备
公开(公告)号：US20130010272A1
公开(公告)日：2013-01-10
申请号：US13534059
申请日：2012-06-27
申请人： Yuichi Gyoda , Koji Mikami , Kouichirou Tsujita
发明人： Yuichi Gyoda , Koji Mikami , Kouichirou Tsujita
IPC分类号： G03B27/72
CPC分类号： G03F1/50 , G03F7/705
摘要： The present invention provides a determination method of determining exposure conditions of an exposure apparatus including an illumination optical system which illuminates a mask, and a projection optical system which projects a pattern of the mask onto a substrate, the method including a step of setting an illumination parameter for a light intensity distribution formed on a pupil plane of the illumination optical system, and an aberration parameter for an aberration of the projection optical system, and a step of determining a value of the illumination parameter and a value of the aberration parameter so that an image performance of an optical image of the pattern of the mask satisfies an evaluation criterion set for a target pattern to be formed on an image plane of the projection optical system.
摘要翻译：本发明提供了一种确定曝光条件的曝光条件的方法，所述曝光装置包括照明掩模的照明光学系统和投影光学系统，所述投影光学系统将掩模的图案投影到基板上，所述方法包括设置照明用于形成在照明光学系统的光瞳平面上的光强度分布的参数，以及投影光学系统的像差的像差参数，以及确定照明参数的值和像差参数的值的步骤，使得掩模图案的光学图像的图像性能满足为在投影光学系统的图像平面上形成的目标图案设定的评价标准。

6. 发明申请

US20120092639A1 RESIST PATTERN CALCULATION METHOD AND CALCULATION PROGRAM STORAGE MEDIUM 有权
标题翻译：电阻图案计算方法和计算程序存储介质
公开(公告)号：US20120092639A1
公开(公告)日：2012-04-19
申请号：US13233209
申请日：2011-09-15
申请人： Ryo Nakayama , Kouichirou Tsujita , Koji Mikami , Hiroyuki Ishii
发明人： Ryo Nakayama , Kouichirou Tsujita , Koji Mikami , Hiroyuki Ishii
IPC分类号： G03B27/58
CPC分类号： G03F7/705 , G03F7/70558 , G03F7/70608
摘要： A recording medium stores a program for causing a computer to execute a method of calculating a resist pattern. The method includes: a first step of calculating a light intensity distribution of an optical image formed on the resist, based on the reticle pattern and an exposure condition; a second step of convoluting, using a first diffusion length, the calculated light intensity distribution; a third step of calculating a representative light intensity from the calculated light intensity distribution or the convoluted light intensity distribution; a fourth step of correcting the convoluted light intensity distribution by adding, to the convoluted light intensity distribution, a correction function including a first function given by: { ∑ k = 0 n  ( a k  J k ) }  exp  ( - α   J ) where J is the distribution of the representative light intensity; and a fifth step of calculating the resist pattern based on the corrected light intensity distribution and a slice level set in advance.
摘要翻译：记录介质存储用于使计算机执行计算抗蚀剂图案的方法的程序。该方法包括：基于掩模图案和曝光条件计算形成在抗蚀剂上的光学图像的光强度分布的第一步骤; 使用第一扩散长度卷积计算的光强度分布的第二步骤; 从计算出的光强度分布或卷积光强度分布计算代表光强度的第三步骤; 第四步骤，通过向所述卷积光强度分布中加入包括由下式给出的第一函数的校正函数来校正所述卷积光强度分布：{Σk = 0 n（ak）J k）} exp（ J）其中J是代表光强度的分布; 以及第五步骤，基于校正的光强度分布和预先设定的限幅电平来计算抗蚀剂图案。

7. 发明授权

US08085386B2 Method for determining exposure condition and computer-readable storage media storing program for determining exposure condition 有权
标题翻译：用于确定曝光条件的方法和用于确定曝光条件的计算机可读存储介质存储程序
公开(公告)号：US08085386B2
公开(公告)日：2011-12-27
申请号：US11869606
申请日：2007-10-09
申请人： Kouichirou Tsujita
发明人： Kouichirou Tsujita
IPC分类号： G03B27/32 , G03B27/34 , G03B27/42
CPC分类号： G03B27/72 , G03F7/70091 , G03F7/701 , G03F7/705 , G03F7/70566 , G03F7/70658
摘要： A method for determining an exposure condition for use in projecting an image of a pattern of an original on a substrate includes a setting step of setting an exposure condition, an image calculating step of calculating a dimension of an image to be projected on the substrate under the set exposure condition, an electrical characteristic calculating step of calculating an electrical characteristic of at least one of a portion for use as an interconnection and a portion for use as a transistor in a pattern to be formed on the substrate in accordance with a result calculated in the image calculating step, a determining step of determining whether the electrical characteristic calculated in the electrical characteristic calculating step satisfies a requirement, and an adjusting step of adjusting the set exposure condition when the electrical characteristic is determined not to satisfy the requirement in the determining step.
摘要翻译：一种用于确定用于将原稿图案的图像投影到基板上的曝光条件的方法包括设置曝光条件的设置步骤，计算要投影到基板上的图像尺寸的图像计算步骤，设定曝光条件，电气特性计算步骤，根据所计算的结果，计算要在基板上形成的图案中用作互连的部分和用作晶体管的部分中的至少一个的电特性在图像计算步骤中，确定步骤，确定在电特性计算步骤中计算的电特性是否满足要求;以及调整步骤，当确定电特性不满足确定中的要求时，调整设定的曝光条件步。

8. 发明申请

US20100009275A1 EXPOSURE METHOD AND MEMORY MEDIUM STORING COMPUTER PROGRAM 有权
标题翻译：曝光方法和记忆媒体存储计算机程序
公开(公告)号：US20100009275A1
公开(公告)日：2010-01-14
申请号：US12499730
申请日：2009-07-08
申请人： Koji Mikami , Kouichirou Tsujita , Hiroyuki Ishii
发明人： Koji Mikami , Kouichirou Tsujita , Hiroyuki Ishii
IPC分类号： G03F7/20
CPC分类号： G03F7/70258 , G03F7/70091 , G03F7/705
摘要： A method comprises determining an exposure condition by executing a process including computing an image formed on an image plane under the current exposure condition while changing the exposure condition, and evaluating a line width of the computed image, and exposing the substrate under the determined exposure condition, wherein the determining includes, computing a simplified evaluation value of the computed image, changing the exposure condition and executing the process in the changed exposure condition, after evaluating the computed image if the simplified evaluation value satisfies an allowable value, and changing the exposure condition and executing the process in the changed exposure condition without evaluating the computed image if the simplified evaluation value does not satisfy the allowable value.
摘要翻译：一种方法包括：通过执行包括在改变曝光条件的同时计算在当前曝光条件下形成在图像平面上的图像并评估计算图像的线宽度并在确定的曝光条件下曝光基板的处理来确定曝光条件其中，所述确定包括：如果所述简化评估值满足允许值，则在评估所述计算图像之后，计算所计算图像的简化评估值，改变所述曝光条件并执行所述改变的曝光条件中的处理，并且改变所述曝光条件以及如果所述简化评估值不满足所述允许值，则在不评估所述计算图像的情况下执行所述改变的曝光条件下的处理。

9. 发明授权

US07642022B2 Parameter determination method, exposure method, device fabrication method, and storage medium 有权
标题翻译：参数确定方法，曝光方法，装置制造方法和存储介质
公开(公告)号：US07642022B2
公开(公告)日：2010-01-05
申请号：US12401343
申请日：2009-03-10
申请人： Hiroto Yoshii , Kouichirou Tsujita , Koji Mikami
发明人： Hiroto Yoshii , Kouichirou Tsujita , Koji Mikami
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125 , G03F7/705
摘要： The present invention provides a parameter determination method of determining an optical parameter and a process parameter by using an optical simulator which calculates a resist image to be formed on a resist applied on a substrate, based on the optical parameter of an exposure apparatus which transfers a pattern of a mask onto the substrate, and a process simulator which calculates a process image to be formed on the substrate, based on the process parameter representing information concerning the resist and information concerning a process to be performed on the resist.
摘要翻译：本发明提供了一种通过使用光学模拟器来确定光学参数和工艺参数的参数确定方法，所述光学模拟器基于传送a的曝光装置的光学参数来计算在施加在衬底上的抗蚀剂上形成的抗蚀剂图像基板上的掩模图案，以及基于表示与抗蚀剂有关的信息的处理参数和关于对抗蚀剂进行的处理的信息来计算要在基板上形成的处理图像的处理模拟器。

10. 发明授权

US06849486B2 Method of manufacturing a thinned gate electrode utilizing protective films and etching 失效
标题翻译：使用保护膜和蚀刻制造薄化栅电极的方法
公开(公告)号：US06849486B2
公开(公告)日：2005-02-01
申请号：US10300805
申请日：2002-11-21
申请人： Tetsuya Yamada , Atsushi Ueno , Kouichirou Tsujita , Atsumi Yamaguchi , Takashi Okagawa
发明人： Tetsuya Yamada , Atsushi Ueno , Kouichirou Tsujita , Atsumi Yamaguchi , Takashi Okagawa
IPC分类号： H01L21/027 , H01L21/033 , H01L21/28 , H01L21/3065 , H01L21/3213 , H01L29/423 , H01L29/49 , H01L29/78 , H01L21/336 , H01L21/302
CPC分类号： H01L21/32139 , H01L21/0273 , H01L21/0334 , H01L21/0337 , H01L21/28123
摘要： The reduction of length of a gate electrode is suppressed in the process of thinning it. A hard mask (5a) is thinned and used to etch a gate electrode material film (4) to form a gate electrode. At this time, a resist mask (10) having an opening (11) over an active region (1) is formed; the resist mask (10) covers at least both ends in the length direction of the hard mask (5a) and exposes in the opening (11) at least the entirety of the part of the hard mask (5a) which lies right above the active region (1). The hard mask (5a) is thinned by etching using the resist mask (10) as a mask and therefore the hard mask (5a) is thinned in the part over the active region (1) without being shortened in the length direction. As a result, the gate electrode formed by using the thinned hard mask (5a) is not shortened in length.
摘要翻译：在减薄栅极电极的长度的过程中，可以抑制栅电极的长度减小。硬掩模（5a）变薄并用于蚀刻栅电极材料膜（4）以形成栅电极。此时，形成在有源区（1）上具有开口（11）的抗蚀剂掩模（10）抗蚀剂掩模（10）至少覆盖硬掩模（5a）的长度方向的两端，并且在开口（11）中至少暴露在活性物体正上方的硬掩模（5a）的整个部分区域（1）。通过使用抗蚀剂掩模（10）作为掩模的蚀刻使硬掩模（5a）变薄，因此在有源区域（1）上的该部分中的硬掩模（5a）变薄，而不会在长度方向上缩短。结果，通过使用变薄的硬掩模（5a）形成的栅电极的长度不缩短。

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