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31. 发明授权

US06393337B1 Method and apparatus for orienting substrates 失效
标题翻译：用于定向基板的方法和装置
公开(公告)号：US06393337B1
公开(公告)日：2002-05-21
申请号：US09482362
申请日：2000-01-13
申请人： Ilya Perlov , Eugene Gantvarg , Leonid Tertitski
发明人： Ilya Perlov , Eugene Gantvarg , Leonid Tertitski
IPC分类号： G06F700
CPC分类号： H01L21/681 , Y10S414/136 , Y10S414/138
摘要： A multiple substrate orienter is provided that includes a rotatable substrate handler having a plurality of substrate support portions, each adapted to support a substrate. The multiple substrate orienter also includes a plurality of stacked substrate supports, each adapted to support a substrate. A plurality of substrate orientation marking (SOM) detectors are provided, and each SOM detector is coupled to a different one of the substrate supports and is adapted to identify a presence of an SOM of a substrate positioned close enough to the SOM detector to allow SOM detection by the SOM detector. The multiple substrate orienter further includes a plurality of lift and lower mechanisms, each lift and lower mechanism coupled to a different one of the substrate supports and adapted to individually lift and lower the substrate support to which the lift and lower mechanism is coupled. Alternatively, each lift and lower mechanism may be coupled to a different one of the substrate support portions of the rotatable substrate handler and adapted to individually lift and lower the substrate support portion to which the lift and lower mechanism is coupled. Preferably the multiple substrate orienter includes a controller having program code adapted to simultaneously rough orient a plurality of substrates loaded onto the substrate support portions of the substrate handler, and to individually fine orient each rough oriented substrate. In further aspects of the invention, a substrate orienter capable of orienting one or more substrates is provided, as are methods for orienting substrates as described above.
摘要翻译：提供了多个基板取向器，其包括具有多个基板支撑部分的可旋转基板处理器，每个基板支撑部分适于支撑基板。多个基板取向器还包括多个层叠的基板支撑件，每个基板支撑件适于支撑基板。提供了多个基板取向标记（SOM）检测器，并且每个SOM检测器耦合到不同的一个基板支撑件，并且适于识别位于距离SOM检测器足够近的基板的SOM的存在以允许SOM 通过SOM检测器检测。多个基板取向器还包括多个提升和下部机构，每个提升和下部机构联接到不同的一个基板支撑件，并且适于单独升高和降低升降机构和下部机构所联接的基板支撑件。或者，每个提升和下部机构可以联接到可旋转基板处理器的不同的一个基板支撑部分，并且适于单独升高和降低升降机构和下部机构所联接的基板支撑部分。优选地，多个基板取向器包括具有程序代码的控制器，该程序代码适用于同时粗略地定向加载到基板处理器的基板支撑部分上的多个基板，并且单独精细地定向每个粗略取向的基板。在本发明的另一方面，提供了能够定向一个或多个基板的基板定向器，如上所述的用于定向基板的方法。

32. 发明授权

US06293853B1 Conditioner apparatus for chemical mechanical polishing 有权
标题翻译：化学机械抛光调理装置
公开(公告)号：US06293853B1
公开(公告)日：2001-09-25
申请号：US09479046
申请日：2000-01-07
申请人： Ilya Perlov , Eugene Gantvarg
发明人： Ilya Perlov , Eugene Gantvarg
IPC分类号： B24B100
CPC分类号： B24B53/017
摘要： In one aspect, an apparatus and a method for use in substrate polishing are described wherein a conditioner head is provided for receiving an end effector for conditioning a polishing pad surface; the conditioner head is supported above the polishing pad surface to be conditioned; and the conditioner head is driven with an actuating force from a position that lies along a line that is substantially normal to the polishing pad surface to be conditioned so that an end effector attached to the conditioner head can condition the surface of the polishing pad. In another aspect, pneumatic pressure is supplied through the conditioner head support arm to apply actuating force to the conditioner head so that an end effector attached to the conditioner head can condition the surface of the polishing pad. In yet another aspect, the conditioner head support arm has a fluid channel extending therein and a fluid port, wherein the fluid channel is constructed to receive rinsing fluid and fluid port is constructed to direct rinsing fluid from the fluid channel toward the polishing pad surface to be conditioned.
摘要翻译：一方面，描述了一种用于衬底抛光的装置和方法，其中设置有用于接收用于调节抛光垫表面的末端执行器的调节头; 调节头被支撑在待调理的抛光垫表面上方; 并且调节头由来自位于基本上垂直于待调理的抛光垫表面的线的位置的致动力驱动，使得附接到调节头的末端执行器可调节抛光垫的表面。另一方面，通过调节器头支撑臂供给气压，以向致动器头施加致动力，使得附接到调节头的末端执行器可调节抛光垫的表面。在另一方面，调节器头支撑臂具有在其中延伸的流体通道和流体端口，其中流体通道被构造成接收冲洗流体，并且流体端口被构造成将冲洗流体从流体通道朝向抛光垫表面引导到被调节。

33. 发明授权

US6103014A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US6103014A
公开(公告)日：2000-08-15
申请号：US605809
申请日：1996-02-23
申请人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排出的均匀性。

34. 发明授权

US6080046A Underwater wafer storage and wafer picking for chemical mechanical polishing 失效
标题翻译：水下晶圆储存和晶圆采摘化学机械抛光
公开(公告)号：US6080046A
公开(公告)日：2000-06-27
申请号：US58945
申请日：1998-04-10
申请人： Norm Shendon , Ilya Perlov , Eugene Gantvarg , Harry Q. Lee , Robert D. Tolles , Sasson Somekh
发明人： Norm Shendon , Ilya Perlov , Eugene Gantvarg , Harry Q. Lee , Robert D. Tolles , Sasson Somekh
IPC分类号： B24B27/00 , B24B37/30 , B24B37/34 , B24B41/00 , B24B53/007 , B24B53/017 , B24B53/12 , B24B57/02 , H01L21/00 , H01L21/304 , H01L21/306 , B24B1/00
CPC分类号： H01L21/67057 , B08B1/007 , B24B27/0023 , B24B37/30 , B24B37/345 , B24B41/005 , B24B53/017 , B24B53/12 , B24B57/02 , H01L21/67051 , H01L21/30625
摘要： A wafer storage and wafer transfer system adjunct to a multi-station chemical mechanical polishing system. Multiple wafers are brought to the system stored in a cassette. A claw member attached to an overhead arm picks up the cassette and deposits it in a water-filled tub next to the polishing system, thereby submerging the wafers in the water with a generally vertical orientation. A blade member attached to the same arm has a recess formed in its surface connected to a vacuum generator powered by positive fluid pressure to thereby selectively apply a vacuum to the recess to vacuum chuck a wafer. The blade member vacuum chucks a wafer under the water, picks it out of the water, and deposits it on a pedestal in polishing system. One of several wafer heads on a rotating carousel picks up the wafer from the pedestal and carries it to one or more of the polishing stations for polishing. After completion of polishing, the wafer head redeposits the wafer on the pedestal. The blade member vacuum chucks the wafer and moves it from the pedestal back to the same cassette or another cassette in the water-filled tub.
摘要翻译：晶圆储存和晶片转移系统，附加于多工位化学机械抛光系统。多个晶片被带到存储在盒中的系统。附接到顶架的爪构件拾取盒并将其沉积在靠近抛光系统的充满水的桶中，从而以大致垂直的方向将晶片浸没在水中。附接到同一个臂上的叶片构件在其表面上形成有一个与由正的流体压力驱动的真空发生器连接的表面，从而选择性地向凹槽施加真空以真空吸附晶片。叶片构件真空吸附水下的晶片，将其从水中取出，并将其沉积在抛光系统的基座上。旋转圆盘传送带上的几个晶片头中的一个从基座拾取晶片并将其运送到一个或多个抛光站用于抛光。抛光完成后，晶片头将晶片重新沉积在基座上。刀片构件真空吸盘并将其从基座移回到充满水的桶中的同一盒或另一盒。

35. 再颁专利

USRE36623E Process for PECVD of silicon oxide using TEOS decomposition 失效
公开(公告)号：USRE36623E
公开(公告)日：2000-03-21
申请号：US752972
申请日：1996-12-02
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , H05H1/24
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surface. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the sane reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

36. 发明授权

US5856240A Chemical vapor deposition of a thin film onto a substrate 失效
标题翻译：将薄膜化学气相沉积到基底上
公开(公告)号：US5856240A
公开(公告)日：1999-01-05
申请号：US342522
申请日：1994-11-21
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C14/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排出的均匀性。

37. 发明授权

US5362526A Plasma-enhanced CVD process using TEOS for depositing silicon oxide 失效
公开(公告)号：US5362526A
公开(公告)日：1994-11-08
申请号：US645999
申请日：1991-01-23
申请人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/48 , C23C16/04 , C23C16/40 , C23C16/42 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/509 , C23C16/54 , C23F4/00 , C30B25/14 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/683 , B05D3/06
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the same reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.

38. 发明授权

US5000113A Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process 失效
标题翻译：热CVD / PECVD反应器和用于二氧化硅的热化学气相沉积和原位多步平面化处理
公开(公告)号：US5000113A
公开(公告)日：1991-03-19
申请号：US944492
申请日：1986-12-19
申请人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David N. Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/48 , C23C16/04 , C23C16/40 , C23C16/42 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/50 , C23C16/509 , C23C16/54 , C23F4/00 , C30B25/14 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/683
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures.

39. 发明申请

US20100035526A1 CHEMICAL MECHANICAL POLISHING SYSTEM HAVING MULTIPLE POLISHING STATIONS AND PROVIDING RELATIVE LINEAR POLISHING MOTION 有权
标题翻译：具有多个抛光站和提供相对线性抛光运动的化学机械抛光系统
公开(公告)号：US20100035526A1
公开(公告)日：2010-02-11
申请号：US12581049
申请日：2009-10-16
申请人： Robert D. Tolles , Norman Shendon , Sasson Somekh , Ilya Perlov , Eugene Gantvarg , Harry Q. Lee
发明人： Robert D. Tolles , Norman Shendon , Sasson Somekh , Ilya Perlov , Eugene Gantvarg , Harry Q. Lee
IPC分类号： B24B1/00 , B24B7/04 , B24B41/06 , B24B53/02
CPC分类号： H01L21/67057 , B08B1/007 , B24B27/0023 , B24B37/30 , B24B37/345 , B24B41/005 , B24B53/017 , B24B57/02 , H01L21/30625 , H01L21/67051
摘要： A chemical-mechanical polishing apparatus including a table top, a transfer station mounted on the table top, a plurality of polishing stations mounted on the table top, a plurality of washing stations, and a plurality of carrier heads supported by a support member rotatable about an axis. Each washing station is located between a first polishing station and either a second polishing station or the transfer station, and the transfer station and the plurality of polishing stations are arranged at approximately equal angular intervals about the axis.
摘要翻译：一种化学机械抛光装置，包括台面，安装在桌面上的转印站，安装在桌面上的多个抛光站，多个洗涤站以及由可围绕一个轴。每个洗涤站位于第一抛光站和第二抛光站或转移站之间，并且传送站和多个抛光站以围绕轴线的大致相等的角度间隔布置。

40. 发明授权

US07097544B1 Chemical mechanical polishing system having multiple polishing stations and providing relative linear polishing motion 有权
标题翻译：化学机械抛光系统具有多个抛光台并提供相对的线性抛光运动
公开(公告)号：US07097544B1
公开(公告)日：2006-08-29
申请号：US09507172
申请日：2000-02-18
申请人： Robert D. Tolles , Norm Shendon , Sasson Somekh , Ilya Perlov , Eugene Gantvarg , Harry Q. Lee
发明人： Robert D. Tolles , Norm Shendon , Sasson Somekh , Ilya Perlov , Eugene Gantvarg , Harry Q. Lee
IPC分类号： B24B7/22
CPC分类号： H01L21/67057 , B08B1/007 , B24B27/0023 , B24B37/30 , B24B37/345 , B24B41/005 , B24B53/017 , B24B57/02 , H01L21/30625 , H01L21/67051
摘要： An apparatus and associated methods for polishing semiconductor wafers and other workpieces that includes polishing surfaces located at multiple polishing stations. Multiple wafer heads, preferably at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a rotatable support, which provides circumferential positioning of the heads relative to the polishing surfaces, and the wafer heads move linearly with respect to the polishing surface, thus providing relative linear motion between the wafer and the polishing station. A load/unload station may be located at a position symmetric with the polishing surfaces. The rotatable support can simultaneously position one of the heads over the load/unload station while the remaining heads are located over polishing stations for wafer polishing so that loading and unloading of wafers can be performed concurrently with wafer polishing. The multiple polishing stations can be used to sequentially polish a wafer held in a wafer head in a step of multiple steps. The steps may be equivalent, may provide polishes of different finish, or may be directed to polishing different levels. Alternately, more than one wafer may equivalently be polished at multiple polishing stations.
摘要翻译：一种用于抛光半导体晶片和其它工件的装置和相关方法，其包括位于多个抛光站处的抛光表面。多个晶片头，优选地至少比抛光站的数量多一个，可以加载单独的晶片。晶片头从可旋转的支撑件悬挂，其提供头部相对于抛光表面的周向定位，并且晶片头相对于抛光表面线性移动，从而在晶片和抛光台之间提供相对的线性运动。装载/卸载站可以位于与抛光表面对称的位置。可旋转支撑件可以将其中一个头部同时放置在装载/卸载台上，而其余的头部位于用于晶片抛光的抛光站之上，从而可以与晶片抛光同时进行晶片的加载和卸载。多个抛光站可以用于在多个步骤的步骤中顺序抛光保持在晶片头中的晶片。这些步骤可以是等效的，可以提供不同涂饰的抛光剂，或者可以指向抛光不同的水平。或者，可以在多个抛光站等效地抛光多于一个晶片。

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