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31. 发明申请

US20080206941A1 Method for manufacturing sic semiconductor device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20080206941A1
公开(公告)日：2008-08-28
申请号：US12068263
申请日：2008-02-05
申请人： Eiichi OKUNO , Hiroki NAKAMURA , Naohiro SUZUKI
发明人： Eiichi OKUNO , Hiroki NAKAMURA , Naohiro SUZUKI
IPC分类号： H01L21/336
CPC分类号： H01L29/7828 , H01L29/045 , H01L29/0615 , H01L29/0619 , H01L29/0657 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L29/7811 , H01L29/7813
摘要： A method for manufacturing a SiC semiconductor device includes: preparing a SiC substrate having a (11-20)-orientation surface; forming a drift layer on the substrate; forming a base region in the drift layer; forming a first conductivity type region in the base region; forming a channel region on the base region to couple between the drift layer and the first conductivity type region; forming a gate insulating film on the channel region; forming a gate electrode on the gate insulating film; forming a first electrode to electrically connect to the first conductivity type region; and forming a second electrode on a backside of the substrate. The device controls current between the first and second electrodes by controlling the channel region. The forming the base region includes epitaxially forming a lower part of the base region on the drift layer.
摘要翻译：一种制造SiC半导体器件的方法包括：制备具有（11-20）取向表面的SiC衬底; 在衬底上形成漂移层; 在漂移层中形成基极区; 在所述基底区域中形成第一导电类型区域; 在所述基极区上形成沟道区，以在所述漂移层和所述第一导电类型区之间耦合; 在沟道区上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 形成电连接到所述第一导电类型区域的第一电极; 以及在所述衬底的背面上形成第二电极。该器件通过控制沟道区域来控制第一和第二电极之间的电流。形成基极区域包括外延地形成漂移层上的基极区域的下部。

32. 发明申请

US20080018612A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20080018612A1
公开(公告)日：2008-01-24
申请号：US11695239
申请日：2007-04-02
申请人： Takashi NAKAMURA , Takayuki Imai , Hirotaka Hayashi , Norio Tada , Hiroki Nakamura
发明人： Takashi NAKAMURA , Takayuki Imai , Hirotaka Hayashi , Norio Tada , Hiroki Nakamura
IPC分类号： G06F3/041
CPC分类号： G06F3/044 , G06F3/0354
摘要： In order to improve accuracy in determining whether or not an object touches a display screen, a display device includes a display unit and a processor. The display unit includes an image display unit which displays an image on a display screen, an optical input unit which picks up an image of an object adjacent to the display screen and a capacitive coupling detector which detects a capacitive coupling to the object adjacent to the display screen. The processor determines that the object touches the display screen by using, and concurrently calculates the coordinates touched by the object by using the capacitive coupling detected by the capacitive coupling detector, and the image picked up by the optical input unit.
摘要翻译：为了提高确定对象是否接触显示画面的准确性，显示装置包括显示单元和处理器。显示单元包括在显示屏幕上显示图像的图像显示单元，拾取与显示屏幕相邻的物体的图像的光学输入单元以及电容耦合检测器，其检测与邻近显示屏幕的物体的电容耦合显示屏。处理器通过使用由电容耦合检测器检测到的电容耦合以及由光学输入单元拾取的图像来使用并同时计算由对象触摸的坐标来触摸显示屏幕。

33. 发明申请

US20070106029A1 Modified polyolefin resin and composition 审中-公开
标题翻译：改性聚烯烃树脂及组合物
公开(公告)号：US20070106029A1
公开(公告)日：2007-05-10
申请号：US10561790
申请日：2004-06-25
申请人： Hiroki Nakamura , Toru Tokimitsu , Atsunori Koshirai
发明人： Hiroki Nakamura , Toru Tokimitsu , Atsunori Koshirai
IPC分类号： C08F297/02
CPC分类号： C08F255/00
摘要： One object of the present invention is to provide an unchlorinated type modified polyolefin resin which has excellent adhesion properties to a substrate comprising a resin having a low- or non-polarity and exhibiting hardly adherable properties, such as a polyolefin type resin, has an excellent solubility in a solvent, and has an excellent water resistance. The present invention provides a modified polyolefin resin produced by subjecting a polyolefin resin (A) to a graft modification by vinyl monomer(s) (B) comprising at least one (meth)acrylate monomer (b) in which an acryloyloxy group or methacryloyloxy group is bonded to a secondary carbon atom or tertiary carbon atom.
摘要翻译：本发明的一个目的是提供一种非离子型改性聚烯烃树脂，其对包含具有低或非极性并且几乎不具有粘合性的树脂的基材具有优异的粘附性，例如聚烯烃类树脂具有优异的在溶剂中的溶解性，并且具有优异的耐水性。本发明提供一种改性聚烯烃树脂，其通过使含有丙烯酰氧基或甲基丙烯酰氧基的至少一种（甲基）丙烯酸酯单体（b）的乙烯基单体（B）进行接枝改性而得到聚烯烃树脂（A）键合到仲碳原子或叔碳原子上。

34. 发明授权

US07173284B2 Silicon carbide semiconductor device and manufacturing method 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US07173284B2
公开(公告)日：2007-02-06
申请号：US10230115
申请日：2002-08-29
申请人： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura
发明人： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura
IPC分类号： H01L29/15
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/8083 , Y10S438/931
摘要： A silicon carbide semiconductor device that includes J-FETs has a drift layer of epitaxially grown silicon carbide having a lower impurity concentration level than a substrate on which the drift layer is formed. Trenches are formed in the surface of the drift layer, and first gate areas are formed on inner walls of the trenches. Second gate areas are formed in isolation from the first gate areas. A source area is formed on channel areas, which are located between the first and second gate areas in the drift layer. A method of manufacturing the device ensures uniform channel layer quality, which allows the device to have a normally-off characteristic, small size, and a low likelihood of defects.
摘要翻译：包括J-FET的碳化硅半导体器件具有与形成有漂移层的衬底相比杂质浓度水平低的外延生长碳化硅的漂移层。沟槽形成在漂移层的表面中，并且第一栅极区域形成在沟槽的内壁上。第二栅极区域与第一栅极区域隔离形成。源极区域形成在位于漂移层中的第一和第二栅极区域之间的沟道区域上。制造该器件的方法确保了均匀的沟道层质量，这允许器件具有常规特性，小尺寸和低缺陷可能性。

35. 发明申请

US20050258454A1 Silicon carbide semiconductor device and method for manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US20050258454A1
公开(公告)日：2005-11-24
申请号：US11135661
申请日：2005-05-24
申请人： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
发明人： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
IPC分类号： H01L21/04 , H01L21/336 , H01L27/098 , H01L27/10 , H01L29/06 , H01L29/24 , H01L29/78 , H01L29/808
CPC分类号： H01L29/1608 , H01L27/098 , H01L29/0619 , H01L29/66068 , H01L29/8083
摘要： A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
摘要翻译：碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。

36. 发明授权

US06470697B2 Air-conditioning system for vehicles 有权
标题翻译：车辆空调系统
公开(公告)号：US06470697B2
公开(公告)日：2002-10-29
申请号：US09921739
申请日：2001-08-03
申请人： Hiroki Nakamura , Hiroshi Nonoyama , Yoshimitsu Inoue , Yuji Takeo , Mitsuyo Oomura , Eiji Takahashi , Toshinobu Homan , Osamu Kasebe
发明人： Hiroki Nakamura , Hiroshi Nonoyama , Yoshimitsu Inoue , Yuji Takeo , Mitsuyo Oomura , Eiji Takahashi , Toshinobu Homan , Osamu Kasebe
IPC分类号： G05D2332
CPC分类号： F25B49/022 , B60H1/3207 , B60H1/3211 , B60H1/3216 , B60H1/3219 , B60H3/0085 , B60H2001/3238 , B60H2001/3245 , B60H2001/3261 , B60H2001/327 , B60H2001/3294 , F24F13/22 , F25B2600/2513 , F25B2700/2117 , F25B2700/21172 , F25B2700/21173 , F25B2700/21175
摘要： When an after-evaporation temperature TE remains below the wet-bulb temperature Twet, the compressor 231 is intermittently operated for a predetermined time after the elapse of a first time To from compressor 231 stopping. On the other hand, when the after-evaporation temperature TE is higher than the wet-bulb temperature Twet, the intermittent operation mode stops. This reduces dispersion of offensive smells from the evaporator.
摘要翻译：当蒸发后温度TE保持低于湿球温度Twet时，压缩机231在从压缩机231停止经过第一次To之后间歇地操作预定时间。另一方面，当蒸发后温度TE高于湿球温度Twet时，间歇运转模式停止。这减少了来自蒸发器的异味气味的分散。

37. 发明授权

US06400422B1 Television receiver 失效
标题翻译：电视接收机
公开(公告)号：US06400422B1
公开(公告)日：2002-06-04
申请号：US09464406
申请日：1999-12-16
申请人： Hiroki Nakamura
发明人： Hiroki Nakamura
IPC分类号： H04N550
CPC分类号： H04N5/50 , H04N21/4263 , H04N21/4383
摘要： A channel preset device a television receiver for receiving one of two television broadcasting modes having different frequency band with each other is disclosed. A signal is received by successively tuning to the respective frequencies of the both broadcasting modes allocated to each of channels. Then it is judged whether each of the received signals includes an actual broadcasting signal. A channel in which the actual broadcasting signal is detected is determined as an on-air channel. The number of channel judged as the on-air channel is counted with respect to each of the both broadcasting modes. A receivable broadcasting mode is judged out of the both broadcasting modes in accordance with the counted number of the on-air channel. The channel preset is conducted with respect to the receivable broadcasting mode.
摘要翻译：公开了一种用于接收彼此具有不同频带的两种电视广播模式中的一种的电视接收机的频道预设装置。通过连续调谐分配给每个信道的两种广播模式的相应频率来接收信号。然后判断每个接收到的信号是否包括实际的广播信号。检测实际广播信号的频道被确定为空中频道。相对于两种广播模式中的每一种，对被判断为广播频道的频道数进行计数。根据广播频道的计数，从两种广播模式中判断可接收广播模式。相对于可接收广播模式进行频道预设。

38. 发明授权

US06297100B1 Method of manufacturing silicon carbide semiconductor device using active and inactive ion species 有权
标题翻译：使用有源和非活性离子物质制造碳化硅半导体器件的方法
公开(公告)号：US06297100B1
公开(公告)日：2001-10-02
申请号：US09408185
申请日：1999-09-29
申请人： Rajesh Kumar , Masami Naito , Hiroki Nakamura , Yuichi Takeuchi
发明人： Rajesh Kumar , Masami Naito , Hiroki Nakamura , Yuichi Takeuchi
IPC分类号： H01L21336
CPC分类号： H01L29/66068 , H01L21/0445 , H01L29/0847 , H01L29/1608 , H01L29/7828 , Y10S438/931
摘要： In a vertical MOSFET, an inactive ion species is ion-implanted into a J-FET portion, a surface channel layer, and/or a base region. The inactive ion species fill intrinsic carbon vacancies or interact with interstitial Si atoms, which are possible origin or responsible for B-diffusion from the base region. Accordingly, the B-diffusion caused by the intrinsic carbon vacancies when the base region is formed is suppressed. The width of the J-FET portion is prevented from being decreased, thereby preventing an increase in resistance of the J-FET portion. Also, the conductive type of the surface channel layer is prevented from being inverted by diffused impurities.
摘要翻译：在垂直MOSFET中，将非活性离子种离子注入到J-FET部分，表面沟道层和/或基极区域中。非活性离子物质填充本征碳空位或与间隙Si原子相互作用，这是可能的起源或负责来自碱性区域的B扩散。因此，抑制了形成基极区域时由本征碳空位引起的B扩散。防止J-FET部分的宽度减小，从而防止J-FET部分的电阻增加。此外，通过扩散的杂质防止了表面通道层的导电类型的反转。

39. 发明授权

US06204895B1 Display panel associated with light collecting plate and position adjusting method using microlenses for the display panel 失效
标题翻译：与集光板相关的显示面板和使用微透镜的显示面板的位置调整方法
公开(公告)号：US06204895B1
公开(公告)日：2001-03-20
申请号：US09163204
申请日：1998-09-30
申请人： Hiroki Nakamura , Yoshihiro Watanabe , Takafumi Nakamura
发明人： Hiroki Nakamura , Yoshihiro Watanabe , Takafumi Nakamura
IPC分类号： G02F11335
CPC分类号： G02F1/133526 , G02F2001/133354
摘要： A display panel is to be fixed to a light collecting plate having a plurality of lenses and includes a matrix array of pixel electrodes opposed to the lenses of the light collecting plate, a plurality of electrode wiring lines formed along rows and columns of the pixel electrodes, and a driver circuit formed outside a display area corresponding to the matrix array of the pixel electrodes, for driving the pixel electrodes via the electrode wirings. Particularly, in the display panel, a plurality of alignment marks for positional adjustment of aligning the focal spots of the lenses with the pixel electrodes are arranged to be opposed to the lenses and separated from the display area by a distance corresponding to an integer number of times of a pitch of the pixel electrodes in at least one of row and column directions of the pixel electrodes.
摘要翻译：显示面板被固定在具有多个透镜的集光板上，并且包括与集光板的透镜相对的像素电极的矩阵阵列，沿着像素电极的行和列形成的多个电极布线以及形成在与像素电极的矩阵阵列对应的显示区域的外部的驱动电路，用于经由电极配线驱动像素电极。特别地，在显示面板中，将用于使透镜的焦斑与像素电极对准的位置调整的多个对准标记布置成与透镜相对并与显示区域分离一定数量的对应于像素电极的行和列方向中的至少一个中的像素电极的间距的倍数。

40. 发明授权

US6107983A Display device and driving method 失效
标题翻译：显示装置及驱动方法
公开(公告)号：US6107983A
公开(公告)日：2000-08-22
申请号：US41950
申请日：1998-03-13
申请人： Youichi Masuda , Nozomu Harada , Hiroki Nakamura
发明人： Youichi Masuda , Nozomu Harada , Hiroki Nakamura
IPC分类号： G09G3/20 , G09G3/36
CPC分类号： G09G3/3688 , G09G3/3648 , G09G3/3677 , G09G2310/021 , G09G2310/0224 , G09G2310/0232 , G09G2310/0283 , G09G2330/021 , G09G2330/08 , G09G2340/0407 , G09G2340/0471 , G09G2340/0478 , G09G2340/0485 , G09G3/2011
摘要： A display device comprises a display panel, a scanning circuit section for supplying a scanning signal to scanning lines of the display panel, and a scanning control circuit section for supplying an n-bit (n: 2 or more positive integer) input numeral signal and an inverted replica of the input numeral signal to the scanning circuit section. In the display device, a scanning circuit section comprises an input connection line group having sets of input connection lines for receiving bits of the input numeral signal and bits of the inverted replica of the input numeral signal, a plurality of logic circuit sections, less in number than the scanning lines, for responding to combinations of the input numeral signal and its inverted replica, and an output distributing unit for assigning an output from one logic circuit section to at least two scanning lines. It is, therefore, possible to suppress an increase in the number of connection lines and of the logic circuit sections involving a high definition of a display device and hence to manufacture a display device in a high yield.
摘要翻译：显示装置包括显示面板，用于向显示面板的扫描线提供扫描信号的扫描电路部分和用于提供n位（n：2或更多正整数）输入数字信号的扫描控制电路部分和输入数字信号的反转副本到扫描电路部分。在显示装置中，扫描电路部分包括具有用于接收输入数字信号的位和输入数字信号的反相副本的位的输入连接线组的输入连接线组，多个逻辑电路部分用于响应输入数字信号和其反相副本的组合，以及输出分配单元，用于将来自一个逻辑电路部分的输出分配给至少两条扫描线。因此，可以抑制连接线的数量的增加和涉及显示装置的高清晰度的逻辑电路部分的增加，从而以高产量制造显示装置。

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