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31. 外观设计

USD436609S1 Transfer chamber 失效
标题翻译：转运室
公开(公告)号：USD436609S1
公开(公告)日：2001-01-23
申请号：US29114734
申请日：1999-11-30
申请人： Avi Tepman
设计人： Avi Tepman

32. 发明授权

US5919345A Uniform film thickness deposition of sputtered materials 失效
标题翻译：溅射材料的均匀膜厚沉积
公开(公告)号：US5919345A
公开(公告)日：1999-07-06
申请号：US645783
申请日：1996-05-14
申请人： Avi Tepman
发明人： Avi Tepman
IPC分类号： C23C14/34 , H01J37/34 , H01L21/203 , H01L21/285
CPC分类号： H01J37/3423 , H01J37/3405 , H01J37/347 , H01J2237/3327
摘要： A sputtering chamber includes a substrate support member, for positioning a substrate thereon, and a sputtering target therein. At least a portion of the sputtering surface of the target is located non-parallel to the substrate. In one aspect of the invention, the sputtering surface of the target is conical, and it tapers as it approaches the substrate.
摘要翻译：溅射室包括用于在其上定位基板的基板支撑构件和其中的溅射靶。靶的溅射表面的至少一部分位于不平行于衬底。在本发明的一个方面，目标的溅射表面是圆锥形的，并且当其接近基板时它逐渐变细。

33. 发明授权

US5673167A Support platen with removable insert useful in semiconductor processing apparatus 失效
标题翻译：具有可移除插入物的支撑板可用于半导体处理装置
公开(公告)号：US5673167A
公开(公告)日：1997-09-30
申请号：US709136
申请日：1996-09-06
申请人： Robert E. Davenport , Avi Tepman
发明人： Robert E. Davenport , Avi Tepman
IPC分类号： C23C14/24 , C23C14/50 , C23C14/54 , C23C14/56 , F16J15/08 , H01L21/00 , H01L21/02 , H01L21/68 , H01L21/683 , H01J37/32
CPC分类号： H01L21/67109 , C23C14/541 , C23C14/564 , H01L21/67103 , H01L21/68 , H01L21/6831 , Y10S269/903 , Y10S277/913 , Y10S277/922 , Y10S277/932 , Y10T279/23 , Y10T403/477 , Y10T403/479
摘要： The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3.times.10.sup.-3 in./in./.degree.C., measured at 600.degree. C., between the surfaces to be bridged by the thin, metal-comprising layer.
摘要翻译：本发明涉及一种在半导体处理中有用的装置和方法。该装置和方法可用于提供密封件，其能够使半导体处理室的第一部分在第一压力下操作，同时半导体处理室的第二部分在第二不同压力下操作。密封装置和方法能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热的热传递的压力手段。密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离其他。优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。本发明特别有用，当线性膨胀系数在600℃下至少为3×10 -3 in / in.in℃时，待被薄金属包覆的表面之间桥接层。

34. 发明授权

US5632873A Two piece anti-stick clamp ring 失效
标题翻译：两片防卡钳环
公开(公告)号：US5632873A
公开(公告)日：1997-05-27
申请号：US446396
申请日：1995-05-22
申请人： Joseph J. Stevens , Roy J. Edwards , Avi Tepman
发明人： Joseph J. Stevens , Roy J. Edwards , Avi Tepman
IPC分类号： C23C14/50 , C23C16/458 , H01L21/687 , C23C14/34 , B05C13/00 , C23C16/04
CPC分类号： H01L21/68721 , C23C14/50 , C23C16/4585
摘要： A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a ring assembly suspended in the chamber on a chamber shield. The ring assembly comprises first and second rings, the second ring being disposed intermediate the first ring and the substrate. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the ring assembly off the shield. After deposition is complete, the support member retracts through the shield, to reposition the outer ring on the shield. The inner ring continues to move downwardly with the substrate support member a short distance before it is repositioned on the shield. In the event that a deposition material layer has formed between the substrate and the outer ring, the inner ring includes a plurality of tabs thereon which contact the substrate to force it out of the ring assembly as the inner ring continues downwardly after the outer ring has been positioned on the shield.
摘要翻译：用于在衬底上沉积膜层的室包括支撑构件，衬底位于该支撑构件上用于在室中进行处理，以及环形组件，其悬挂在腔室屏蔽中的腔室中。环组件包括第一和第二环，第二环设置在第一环和衬底之间。支撑构件可定位在腔室中以在其上接收衬底，并且可进一步定位以使衬底穿过屏蔽件，从而将环组件提离屏蔽。沉积完成后，支撑构件通过屏蔽件缩回，以将外环重新定位在屏蔽上。在其被重新定位在护罩上之前，内环继续向下移动，衬底支撑构件短距离。在衬底和外环之间形成沉积材料层的情况下，内圈包括多个接头，当外环具有内环时内环继续向下，接触衬底以将其压出环组件被定位在盾牌上。

35. 发明授权

US5589224A Apparatus for full wafer deposition 失效
标题翻译：全晶圆沉积装置
公开(公告)号：US5589224A
公开(公告)日：1996-12-31
申请号：US310617
申请日：1994-09-22
申请人： Avi Tepman , Takeshi Jinbo , Hiroyuki Takahama , Akihiko Saito
发明人： Avi Tepman , Takeshi Jinbo , Hiroyuki Takahama , Akihiko Saito
IPC分类号： C23C16/44 , C23C16/458 , C23C16/00
CPC分类号： C23C16/4401 , C23C16/4585
摘要： The present invention provides a shield arrangement that prevents deposition in the area of the chamber surrounding the substrate. This shield arrangement is equipped with a wall-like member which surrounds a substrate, and includes a projecting annular flange and a substrate support which extends in the horizontal direction beyond the substrate, and includes a groove therein. The annular flange is received in the groove to shield the deposition region of the chamber from the remainder of the chamber.
摘要翻译：本发明提供一种屏蔽装置，其防止在围绕衬底的腔室的区域中的沉积。该屏蔽装置配备有围绕基板的壁状构件，并且包括突出的环形凸缘和在水平方向上延伸超过基板的基板支撑，并且在其中包括凹槽。环形凸缘容纳在凹槽中，以将腔室的沉积区域与腔室的其余部分隔离。

36. 发明授权

US08500975B2 Method and apparatus for sputtering onto large flat panels 有权
标题翻译：用于溅射到大平板上的方法和装置
公开(公告)号：US08500975B2
公开(公告)日：2013-08-06
申请号：US11484333
申请日：2006-07-11
申请人： Hien Minh Huu Le , Akihiro Hosokawa , Avi Tepman
发明人： Hien Minh Huu Le , Akihiro Hosokawa , Avi Tepman
IPC分类号： C25B9/00 , C25B11/00 , C25B13/00 , C23C14/00
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90° between them.
摘要翻译：放置在矩形溅射靶的背面的矩形磁控管，用于涂覆矩形面板并且具有相对极性的磁体，所述磁体布置成在对应于邻近靶的等离子体轨道之间形成间隙，所述等离子体轨道以闭合的蛇形或螺旋形环路延伸。螺旋可以具有大量的包装，并且闭合的环可以在包装之前折叠。磁控管的尺寸仅稍低于目标的尺寸，并且在目标的两个垂直方向上扫描，对于对应于至少间隙间隔的2m靶的扫描长度例如为约100mm 在环路的平行部分之间。环路中一些磁铁下方的中心铁磁垫片可以补偿垂直下垂。磁控管可以以它们之间旋转90°的两个交替的双Z图案进行扫描。

37. 发明申请

US20080279672A1 BATCH EQUIPMENT ROBOTS AND METHODS OF STACK TO ARRAY WORK-PIECE TRANSFER FOR PHOTOVOLTAIC FACTORY 审中-公开
标题翻译：批量设备机器人和堆叠方式进行光伏工厂的工作转移
公开(公告)号：US20080279672A1
公开(公告)日：2008-11-13
申请号：US11747525
申请日：2007-05-11
申请人： ROBERT Z. BACHRACH , Avi Tepman , Alexander S. Polyak
发明人： ROBERT Z. BACHRACH , Avi Tepman , Alexander S. Polyak
IPC分类号： B65G59/00
CPC分类号： B65G65/00 , B65G37/02 , B65G2201/0297 , H01L21/67236 , H01L21/67276 , H01L21/67715 , H01L21/67721 , H01L21/67727 , H01L21/67733 , H01L21/67748 , H01L21/67769
摘要： The present invention generally comprises equipment for an automated high volume batch work-piece manufacturing factory comprising work-piece handling and work-piece processing in a high productivity factory architecture capable of producing 1,000 or more work-piece an hour. The work-pieces may be presented to the equipment from a stacked supply to a parallel array. Additionally, the work-pieces may be transferred between manufacturing architectures by an array to array batch transfer. The work-pieces may be transferred within the manufacturing architecture in a parallel to parallel batch transfer operation. The robotic operations may be between robotic devices, between robotic devices and processing equipment, and within processing equipment.
摘要翻译：本发明通常包括用于自动化大批量批量工件制造工厂的设备，其包括能够每小时生产1,000个或更多个工件的高生产率工厂结构中的工件处理和工件加工。工件可以从堆叠的供应提供给设备到并行阵列。另外，工件可以通过阵列在制造架构之间转移到阵列批量传输。工件可以在并行批量传输操作的同时在制造架构内转移。机器人操作可以在机器人设备之间，机器人设备和处理设备之间以及处理设备内。

38. 发明申请

US20080057836A1 PAD CONDITIONING HEAD FOR CMP PROCESS 失效
标题翻译：用于CMP工艺的PAD调节头
公开(公告)号：US20080057836A1
公开(公告)日：2008-03-06
申请号：US11927048
申请日：2007-10-29
申请人： Alexander Polyak , Avi Tepman
发明人： Alexander Polyak , Avi Tepman
IPC分类号： B24B1/00
CPC分类号： B24B53/017 , H01L21/31053
摘要： In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.
摘要翻译：在第一方面，提供了用于化学机械抛光（CMP）工艺的第一设备。第一装置包括（1）可旋转构件; （2）适于接收和保持调节盘的端部执行器; 和（3）设置在可旋转构件和末端执行器之间的弹性装置。弹性装置是（a）适于通过来自可旋转构件的扭矩旋转末端执行器，以及（b）柔性可伸展的，以便向末端执行器施加力，同时允许末端执行器偏离与可旋转构件，以便调节盘的调节表面与被调节的垫的不规则抛光表面相一致。提供了许多其它方面，包括使用液体或气体来阻止抛光浆料或碎屑进入调节头的方法和装置。

39. 发明申请

US20070012562A1 Method and apparatus for sputtering onto large flat panels 有权
标题翻译：用于溅射到大平板上的方法和装置
公开(公告)号：US20070012562A1
公开(公告)日：2007-01-18
申请号：US11484333
申请日：2006-07-11
申请人： Hien Minh Le , Akihiro Hosokawa , Avi Tepman
发明人： Hien Minh Le , Akihiro Hosokawa , Avi Tepman
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90° between them.
摘要翻译：放置在矩形溅射靶的背面的矩形磁控管，用于涂覆矩形面板并且具有相对极性的磁体，所述磁体布置成在对应于邻近靶的等离子体轨道之间形成间隙，所述等离子体轨道以闭合的蛇形或螺旋形环路延伸。螺旋可以具有大量的包装，并且闭合的环可以在包装之前折叠。磁控管的尺寸仅稍低于目标的尺寸，并且在目标的两个垂直方向上扫描，对于对应于至少间隙间隔的2m靶的扫描长度例如为约100mm 在环路的平行部分之间。环路中一些磁铁下方的中心铁磁垫片可以补偿垂直下垂。磁控管可以以它们之间旋转90°的两个交替的双Z图案进行扫描。

40. 发明申请

US20060070875A1 Coils for generating a plasma and for sputtering 有权
公开(公告)号：US20060070875A1
公开(公告)日：2006-04-06
申请号：US11229139
申请日：2005-09-15
申请人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
发明人： Jaim Nulman , Sergio Edelstein , Mani Subramani , Zheng Xu , Howard Grunes , Avi Tepman , John Forster , Praburam Gopalraja
IPC分类号： C23C14/00 , C25B11/00
CPC分类号： C23C14/34 , H01J37/321 , H01J37/34
摘要： A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

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