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    • 21. 发明授权
    • Active balun
    • 主动平衡 - 不平衡变压器
    • US4994755A
    • 1991-02-19
    • US355739
    • 1989-05-22
    • Ward S. TitusManfred J. Schindler
    • Ward S. TitusManfred J. Schindler
    • H03D7/12H03D7/14H03D9/06H03F3/60H03H11/32
    • H03D9/0675H03F3/607H03H11/32H03D2200/0023H03D2200/0076H03D7/125H03D7/14H03F2200/198
    • A double balun circuit is provided by connecting two pairs of circut types. The first circuit, a distributed divider circuit, includes first and second pluralities of field effect transistors, a common input transmission line, and a first and second output transmission lines. The common input transmission line is disposed to successively couple the input electrodes of each transistor of both the first and second pluralities of transistors. The output lines are disposed to successively couple the output electrodes of the respective ones of the plurities of transistors. Each output transmission line is coupled to one of the pair of output terminals of the circuit. A pair of inverter circuits comprised of an input transmission line, a plurality of field effect transistors, and an output transmission line having input and output electrodes successively coupled by respective input and output transmission line networks are coupled between the output electrodes of each one of a pair of divider circuits, such that an input electrode at the input side of the inverter circuit is coupled to one of the outputs of the divider circuit, whereas an input terminal coupled to the output side of the inverter is coupled to the output of the second one of the divider circuits. This particular arrangement provides an active double balun which may be used in a double baluns mixer.
    • 通过连接两对环路类型提供双平衡 - 不平衡转换电路。 第一电路,分布式分配电路,包括第一和第二多个场效应晶体管,公共输入传输线,以及第一和第二输出传输线。 公共输入传输线被设置为连续地耦合第一和第二多个晶体管的每个晶体管的输入电极。 输出线被设置成连续地耦合晶体管的各个杂质的输出电极。 每个输出传输线耦合到电路的一对输出端中的一个。 由输入传输线,多个场效应晶体管和具有通过相应的输入和输出传输线网络连续耦合的输入和输出电极的输出传输线组成的一对逆变器电路耦合在一个 一对分压器电路,使得反相器电路的输入侧的输入电极耦合到除法器电路的输出之一,而耦合到反相器的输出侧的输入端耦合到第二 一个分频电路。 这种特殊的布置提供了可以用于双重巴伦混合器中的主动双重平衡 - 不平衡变压器。
    • 22. 发明授权
    • Double balanced mixing
    • 双重平衡混合
    • US4947062A
    • 1990-08-07
    • US196040
    • 1988-05-19
    • Scott M. WeinerDonald A. NeufSteven J. Spohrer
    • Scott M. WeinerDonald A. NeufSteven J. Spohrer
    • H03D7/12H03D7/14H03D9/06
    • H03D9/0675H03D7/1408H03D7/1441H03D7/1458H03D7/1491H03D2200/0023H03D2200/0043H03D2200/0047H03D2200/0074H03D2200/0088H03D2200/009H03D7/125H03D7/14
    • A double balanced mixer comprising a plurality of transistors, each transistor being adapted to operate in the microwave frequency range and including an input electrode, a control electrode, and an output electrode, the transistors being arranged in a ring configuration with the control electrodes of a first pair of the transistors being interconnected and the control electrodes of a second pair of the transistors being interconnected; circuitry for coupling an input signal having a frequency within a predetermined frequency band in the microwave frequency range to the input electrodes of the ring of transistors and for producing a 180.degree. relative phase difference between the input signal applied to the input electrodes of first transistors of the first and second pairs of transistors and the input signal applied to the input electrodes of second transistors of the first and second pairs of transistors; circuitry for coupling a local oscillator signal to the control electrodes of the ring of transistors and for producing a 180.degree. relative phase difference between the local oscillator signal applied to the control electrodes of the first pair of transistors and the local oscillator signal applied to the control electrodes of the second pair of transistors; and circuitry for biasing the plurality of transistors in their linear operating regions; whereby the ring of transistors produces at the output electrodes an output signal having a frequency which is a function of the frequencies of the input signal and the local oscillator signal for input signals within the predetermined frequency band.
    • 一种双平衡混频器,包括多个晶体管,每个晶体管适于在微波频率范围内工作,并且包括输入电极,控制电极和输出电极,所述晶体管布置成环形结构,其中控制电极为 第一对晶体管互连,并且第二对晶体管的控制电极相互连接; 用于将具有在微波频率范围内的预定频带内的频率的输入信号耦合到晶体管环的输入电极的电路,并且用于在施加到第一晶体管的输入电极的输入信号之间产生180°的相对相位差 所述第一和第二对晶体管和所述输入信号施加到所述第一和第二对晶体管的第二晶体管的输入电极; 用于将本地振荡器信号耦合到晶体管环的控制电极并且用于产生施加到第一对晶体管的控制电极的本地振荡器信号与施加到控制器的本地振荡器信号之间的180°相对相位差的电路 第二对晶体管的电极; 以及用于在其线性操作区域中偏置所述多个晶体管的电路; 由此晶体管在输出电极处产生具有与预定频带内的输入信号相关的输入信号和本地振荡器信号的频率的函数的频率的输出信号。
    • 24. 发明授权
    • Microwave mixer apparatus
    • 微波搅拌机
    • US4603435A
    • 1986-07-29
    • US642223
    • 1984-08-20
    • Scott J. Butler
    • Scott J. Butler
    • H03D7/12H03D7/14H03D9/06H04B1/26
    • H03D9/0675H03D7/125H03D7/14
    • A 3 dB quadrature coupler is connected to an RF input terminal and an LO input terminal, and its outputs are connected to first and second antiphase power dividers. The outputs of the first and second antiphase power dividers are individually connected to the gates of four field effect transistors (FET's). The drains of two of the FET's are connected together and to a low pass filter, and the drains of the other two FET's are connected together and to a second low pass filter. The outputs of the filters are connected to the two inputs of a differential amplifier, and the IF signal is taken at the output of the differential amplifier.
    • 3dB正交耦合器连接到RF输入端和LO输入端,其输出连接到第一和第二反相电源分配器。 第一和第二反相功率分配器的输出分别连接到四个场效应晶体管(FET)的栅极。 两个FET的漏极连接在一起并连接到低通滤波器,另外两个FET的漏极连接在一起并连接到第二个低通滤波器。 滤波器的输出端连接到差分放大器的两个输入端,IF信号在差分放大器的输出端取。
    • 25. 发明授权
    • Microwave FET mixer arranged to receive RF input at gate electrode
    • 微波FET混频器布置成在栅电极处接收RF输入
    • US4592095A
    • 1986-05-27
    • US594684
    • 1984-03-26
    • Hiroshi OhnishiSadahiko Yamashita
    • Hiroshi OhnishiSadahiko Yamashita
    • H04B1/06H03D7/12H03D9/06H04B1/26
    • H03D9/0675H03D2200/0027H03D7/125
    • In a GaAs FET microwave mixer, a gate of the FET is used to receive a radio frequency input signal, while a source of the same is used to inject a local oscillator signal therethrough so as to develop an intermediate frequency signal at a drain of the FET. The mixer of the invention comprises, in addition to such an FET, first and second particular circuits respectively connected to the source, where the first circuit is arranged to exhibit a short-circuited impedance at a frequency band of the radio frequency input signal, and the second circuit is arranged to exhibit an open-circuited impedance at a frequency band of the local oscillator signal. The first and second circuits may be actualized by distributed constant circuits, such as stubs, or by lumped constant circuits, such as resonance circuits.
    • 在GaAs FET微波混频器中,FET的栅极用于接收射频输入信号,而其源极用于通过其注入本地振荡器信号,以便在该漏极处产生中频信号 FET。 除了这种FET之外,本发明的混频器还包括分别连接到源的第一和第二特定电路,其中第一电路布置成在射频输入信号的频带处呈现短路阻抗,以及 第二电路被布置成在本地振荡器信号的频带处呈现开路的阻抗。 第一和第二电路可以由诸如短线的分布常数电路或诸如谐振电路的集总常数电路来实现。
    • 27. 发明授权
    • Distributive resistive mixer
    • 分布式电阻混频器
    • US08547158B2
    • 2013-10-01
    • US13063001
    • 2009-08-28
    • Ullrich PfeifferErik OejeforsHartmut G. RoskosAlvydas Lisauskas
    • Ullrich PfeifferErik OejeforsHartmut G. RoskosAlvydas Lisauskas
    • G06G7/12
    • H03D7/125H03D1/18H03D9/0675H03D2200/0074
    • The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal VRF. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor CGD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vg which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Ids which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.
    • 本发明涉及包含用于检测电磁高频信号VRF的功率的场效应晶体管的装置。 根据现有技术,高频信号通过电容器CGD耦合到栅极G中,并且通过电容器CGD耦合到场效应晶体管FET的漏极D中,栅极G被直接电压Vg偏置,直流电压Vg对应于 FET晶体管。 源S处的结果电流包含与高频信号幅度的平方成比例的直流电流部分Ids。 所述功率检测器的工作频率通过离散布置限制在几千兆赫兹(GHz),特别是场效应晶体管的预定栅极长度。 本发明的目的是改进电阻式混频器,使得它可以在高千兆赫兹和太赫兹频率下工作。 为此,电阻式混合器包括具有第一和第二电导体的线,其具有相应的连接触点,使得电气高频信号可以耦合到线路中,第一导体具有多个串联连接的电压依赖性 电阻元件(R)和至少一个电容元件(C)插入在第一和第二导体之间。
    • 28. 发明授权
    • Miniaturized dual-balanced mixer circuit based on a double spiral layout architecture
    • 基于双螺旋布局架构的小型化双平衡混频器电路
    • US08112058B2
    • 2012-02-07
    • US12391622
    • 2009-02-24
    • Che-Chung KuoHuei Wang
    • Che-Chung KuoHuei Wang
    • H04B1/26
    • H03D9/0633H03D9/0675
    • A miniaturized dual-balanced mixer circuit based on a double spiral layout architecture is proposed, which is designed for use to provide a frequency mixing function for millimeter wave (MMW) signals, and which features a downsized circuit layout architecture that allows IC implementation to be more miniaturized than the conventional star-type dual-balanced mixer (DBM). The proposed miniaturized dual-balanced mixer circuit is distinguished from the conventional star-type DBM particularly in the use of a double spiral layout architecture for the layout of two balun circuit units. This feature allows the required layout area to be only about 15% of that of the conventional star-type DBM.
    • 提出了一种基于双螺旋布局架构的小型双平衡混频器电路,其设计用于提供毫米波(MMW)信号的混频功能,其特征在于使IC实现成为可能性小的电路布局架构 比传统的星型双平衡混频器(DBM)更小型化。 所提出的小型化双平衡混频器电路与传统的星型DBM不同,特别是在使用双螺旋布局架构来布置两个平衡 - 不平衡转换器单元的情况下。 该特征允许所需的布局面积仅为常规星型DBM的约15%。
    • 29. 发明申请
    • Microwave detector using fet resistive mixer
    • 微波探测器采用电阻式混频器
    • US20040113833A1
    • 2004-06-17
    • US10296391
    • 2002-11-25
    • Sang-Kun Lee
    • G01S007/40
    • G01S7/352H03D9/0675
    • Provided is a microwave detector including a resistive mixer that uses a field effect transistor (FET) for generating an intermediate frequency signal by combining a signal generated by an antenna and an output of a local oscillator. The microwave detector includes an antenna for receiving a radio signal; a modulator for modulating the radio signal by converting its frequency with a resistive mixer that uses one or a plurality of FET; a central processing unit for identifying the modulated signal and its frequency band, measuring the intensity of the signal, and outputting the same as a predetermined signal; and a display unit for outputting a visual or audio signal in response to the signal generated by the central processing unit, and selecting a mode of the output of a signal. The microwave detector including an FET is easy to make at a lower cost, hardly malfunctions, and further can operate with a little power.
    • 提供了一种微波检测器,其包括电阻混频器,其使用场效应晶体管(FET)来通过组合由天线产生的信号和本地振荡器的输出来产生中频信号。 微波检测器包括用于接收无线电信号的天线; 调制器,用于通过使用一个或多个FET的电阻混频器转换其频率来调制无线电信号; 中央处理单元,用于识别调制信号及其频带,测量信号的强度,并将其作为预定信号输出; 以及显示单元,用于响应于由中央处理单元生成的信号输出视觉或音频信号,并且选择信号的输出的模式。 包括FET的微波检测器容易以较低的成本进行制造,几乎不发生故障,并且还能够以少量的功率运行。