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21. 发明授权

US5060236A Semiconductor light emission system 失效
标题翻译：半导体发光系统
公开(公告)号：US5060236A
公开(公告)日：1991-10-22
申请号：US97457
申请日：1987-09-16
申请人： Tetsuya Yagi , Misao Kironaka
发明人： Tetsuya Yagi , Misao Kironaka
IPC分类号： H01L27/15 , H01S5/00 , H01S5/026 , H01S5/062 , H01S5/223
CPC分类号： H01S5/06203 , H01L27/15 , H01S5/0035 , H01S5/06213 , H01S5/2232
摘要： A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current restricting layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive--first conductive-second conductive bipolar transistor part constituted of said second conductive current restricting layer, first conductive clade layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.
摘要翻译：一种半导体发光系统，包括半导体激光器部分，由具有穿孔的条纹沟槽的第二导电电流限制层，第一导电覆层，第一或第二导电有源层，第一导电基板上的第二导电覆层以及由所述第二导电电流限制层，第一导电分支层，第一或第二导电有源层，除了半导体激光器部分之外的位置的第二导电有源层构成的第二导电 - 第一导电 - 第二导电双极晶体管部分。

22. 发明授权

US5027364A Laser diode with buried active layer and lateral current limitation 失效
标题翻译：具有埋层有源层和横向电流限制的激光二极管
公开(公告)号：US5027364A
公开(公告)日：1991-06-25
申请号：US455411
申请日：1989-12-18
申请人： Wolfgang Thulke
发明人： Wolfgang Thulke
IPC分类号： H01S5/00 , H01L33/00 , H01S3/06 , H01S5/042 , H01S5/10 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/0425 , H01S5/10 , H01S5/227 , H01S5/2232 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/2275 , H01S5/24
摘要： Laser diode with BH double hetero-structure and lateral channels for lateral current limitation, whereby the laser-active stripes are provided with lateral spacer layers and these spacer layers are fashioned before the etching of the lateral channels of a semiconductor material that cannot be attached by the etchant, so that the laser-active stripes have an undamaged, straight line, lateral limitation. This laser diode has a low threshold current and a high differential efficiency given a high output power. Parasitic capacitances are voided by transverse channels and a structured metal contact.
摘要翻译： PCT No.PCT / DE88 / 00234 Sec。 371日期1989年12月18日 102（e）日期1989年12月18日PCT提交1988年4月18日PCT公布。第WO88 / 08215号公报日期为1988年10月20日。具有BH双异质结构和侧向通道的激光二极管用于横向电流限制，由此激光有源条带设置有侧向间隔层，并且在蚀刻侧向通道之前形成这些间隔层不能被蚀刻剂附着的半导体材料，使得激光活性条纹具有未损坏的直线，横向限制。该激光二极管具有低阈值电流和给出高输出功率的高差分效率。寄生电容通过横向通道和结构化金属接触而失效。

23. 发明授权

US4983541A Semiconductor laser device fabrication 失效
标题翻译：半导体激光器件制造
公开(公告)号：US4983541A
公开(公告)日：1991-01-08
申请号：US437376
申请日：1989-11-13
申请人： Hisao Kumabe
发明人： Hisao Kumabe
IPC分类号： H01S5/00 , H01S5/042 , H01S5/16 , H01S5/223
CPC分类号： H01S5/2232 , H01S5/16
摘要： Disclosed herein is a semiconductor laser device capable of exhibiting very low threshold current and operating in a fundamental transverse mode stably even at a high power operation, and a method for fabricating the same. The fabricating method includes only two crystal growth steps to thereby produce the semiconductor laser device capable of operating in the fundamental transverse mode at high power operation. The thus obtained device has high reproducability due to the simple fabricating process.

24. 发明授权

US4946802A Semiconductor laser device fabricating method 失效
标题翻译：半导体激光器件制造方法
公开(公告)号：US4946802A
公开(公告)日：1990-08-07
申请号：US273393
申请日：1988-11-18
申请人： Akihiro Shima , Wataru Susaki
发明人： Akihiro Shima , Wataru Susaki
IPC分类号： H01S5/10 , H01S5/16 , H01S5/22 , H01S5/223
CPC分类号： H01S5/16 , H01S5/1064 , H01S5/2201 , H01S5/2232 , H01S5/2235 , Y10S148/095 , Y10S148/11
摘要： A high-power AlGaAs/GaAs laser device comprises: a ridge formed on the top surface of a substrate from one end to the opposite end, thereof wherein the width of the ridge is made narrower in regions near both the ends and wider in a middle region; a depression is formed in the wider region of the ridge; a clad layer is grown epitaxially over the top surface of the substrate; and an active layer is grown epitaxially on the clad layer, wherein the thickness of the active layer is thinner in portions just above the narrower ridge regions and relatively thicker in a portion just above the wider ridge region.
摘要翻译：高功率AlGaAs / GaAs激光器件包括：从一端到另一端形成在衬底顶表面上的脊，其中脊的宽度在两个端部附近的区域中较窄并且在中间较宽地区; 在山脊的较宽区域形成凹陷; 包覆层在衬底的顶表面上外延生长; 并且在包覆层上外延生长活性层，其中有源层的厚度在较窄脊区域正上方的部分更薄，并且在较宽脊区域正上方的部分中相对较厚。

25. 发明授权

US4932033A Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same 失效
标题翻译：具有利用倾斜面的侧面p-n结的半导体激光器及其制造方法
公开(公告)号：US4932033A
公开(公告)日：1990-06-05
申请号：US273721
申请日：1988-11-17
申请人： Seiichi Miyazawa , Mitsuru Ohtsuka
发明人： Seiichi Miyazawa , Mitsuru Ohtsuka
IPC分类号： H01S5/223 , H01S5/30 , H01S5/40
CPC分类号： H01S5/305 , H01S5/2232 , H01S5/2231 , H01S5/2235 , H01S5/2237 , H01S5/2238 , H01S5/3081 , H01S5/4031
摘要： A semiconductor laser having a laser resonator structure having a substrate with a trapezoidal projection forming on both sides of an upper base an inclined surface extending along a resonating direction of a resonator, a first semiconductor layer of a first or second conductivity type formed on the substrate, an active layer for generating a laser beam, a second semiconductor layer formed on the substrate and to which an impurity of a convertible conductivity type is doped with a portion of the second semiconductor layer above the inclined surface of the substrate having the first conductivity type and the other portion having the second conductivity type, and a pair of electrodes causing a current to flow through the active layer.
摘要翻译：一种具有激光谐振器结构的半导体激光器，该激光谐振器结构具有在上基底的两侧上形成有梯形突起的基板，沿着谐振器的谐振方向延伸的倾斜表面，形成在基板上的第一或第二导电类型的第一半导体层用于产生激光束的有源层，形成在基板上的第二半导体层，并且可转换导电类型的杂质掺杂有具有第一导电类型的基板的倾斜表面上的第二半导体层的一部分并且具有第二导电类型的另一部分，以及引起电流流过有源层的一对电极。

26. 发明授权

US4860299A Semiconductor laser device 失效
公开(公告)号：US4860299A
公开(公告)日：1989-08-22
申请号：US195069
申请日：1988-05-17
申请人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
发明人： Masahiro Hosoda , Kazuaki Sasaki , Masaki Kondo , Saburo Yamamoto
IPC分类号： H01S5/00 , H01S5/223 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2232 , H01S5/2275
摘要： A semiconductor laser device comprising a substrate; a current blocking layer disposed on the substrate; a striped channel formed in a manner to reach the substrate through the current blocking layer; a striped mesa disposed on the area of the V-channel, the striped mesa being of a multi-layered crystal that is composed of a first cladding layer, an active layer, a second cladding layer, and a protective layer in that order; and burying layers having at least one of the following two, a pn-reverse bias junction and a high resistant crystal, the burying layer being formed on both sides of the striped mesa, wherein the protective layer is made of Ga.sub.1-x Al.sub.x As (x>O).

27. 发明授权

US4799226A Distributed feedback laser diode comprising an active layer partly adjacent to a waveguide layer 失效
标题翻译：分布式反馈激光二极管包括与波导层部分相邻的有源层
公开(公告)号：US4799226A
公开(公告)日：1989-01-17
申请号：US56011
申请日：1987-06-01
申请人： Ikuo Mito
发明人： Ikuo Mito
IPC分类号： H01S5/00 , H01S5/12 , H01S5/223 , H01S5/323 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/12 , H01S5/2237 , H01S5/32391
摘要： In a distributed feedback laser diode comprising an optical waveguide layer, a first stack of a current confining and a current blocking layer, and a second stack of a first cladding layer, an active layer, and a second cladding layer consecutively on a semiconductor substrate having a corrugated surface, a pair of inwardly directed surfaces is formed to define a groove in the first stack, to divide the current blocking layer into two current blocking parts, and to expose an area of the waveguide layer as a groove bottom. The first cladding layer is formed on the current blocking parts, the inwardly directed surfaces, and the groove bottom. The laser diode is suitable to manufacture by metal organic chemical vapor deposition. The groove is preferably perpendicular to corrugations of the corrugated surface. The groove bottom may have a width of 1.5 microns. The groove can be formed by chemical etching of the first stack before epitaxial growth of the first cladding layer.
摘要翻译：在分布式反馈激光二极管中，包括光波导层，电流限制和电流阻挡层的第一叠层，以及连续地在半导体衬底上的第一覆层，有源层和第二覆层的第二堆叠，形成波纹表面，一对向内的表面形成为在第一堆叠中限定凹槽，以将电流阻挡层划分成两个电流阻挡部分，并将波导层的区域暴露为凹槽底部。第一包层形成在电流阻挡部分，向内指向的表面和槽底部上。激光二极管适用于通过金属有机化学气相沉积制造。槽优选垂直于波纹表面的波纹。槽底可以具有1.5微米的宽度。可以在第一包层的外延生长之前，通过第一堆叠的化学蚀刻来形成沟槽。

28. 发明授权

US4796268A Heterostructure semiconductor laser diode 失效
标题翻译：异质结构半导体激光二极管
公开(公告)号：US4796268A
公开(公告)日：1989-01-03
申请号：US4860
申请日：1987-01-12
申请人： Werner Schairer
发明人： Werner Schairer
IPC分类号： H01S5/10 , H01S5/16 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/20 , H01S5/1021 , H01S5/16 , H01S5/2059
摘要： A heterostructure semiconductor laser diode with a sequence of layers, formed on a substrate, including a laser-active layer arranged between enclosing layers of opposite respectively conductivity types, a cover layer disposed on the side of the sequence of layers facing away from the substrate, and a layer of a conductivity type opposite to that of the substrate arranged between the substrate and the lower enclosing layer and having in the area of the plane of symmetry, a narrow strip produced by diffusion which has the same conductivity type as the substrate and penetrates into the area of the substrate. The current flowing in the forward direction of the semiconductor laser diode is thereby restricted to a narrow strip-shaped area of the laser-active layer.
摘要翻译：一种具有层序列的异质结构半导体激光二极管，其形成在基板上，包括布置在相对于导电类型相反的封闭层之间的激光有源层，设置在背离衬底的层序列一侧的覆盖层，以及与布置在基板和下封闭层之间的基板的导电类型的导电类型的层，并且在对称平面的区域中具有通过扩散产生的窄带，其具有与基板相同的导电类型并且穿透进入基材的区域。因此，在半导体激光二极管的正向流动的电流被限制在激光有源层的窄带状区域。

29. 发明授权

US4737237A Process for producing a buried strip semiconductor laser with or without a defractive network 失效
$Process for producing a buried strip semiconductor laser with or without a defractive network$
标题翻译：用于生产具有或不具有折射网络的埋地半导体激光器的工艺
公开(公告)号：US4737237A
公开(公告)日：1988-04-12
申请号：US910499
申请日：1986-09-23
申请人： Guy Chaminant , Josette Charil , Jean-Claude Bouley
发明人： Guy Chaminant , Josette Charil , Jean-Claude Bouley
IPC分类号： H01L21/205 , H01L21/208 , H01S5/00 , H01S5/042 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/227 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01S5/20 , H01S5/227 , H01S5/12 , H01S5/2232 , H01S5/2275 , H01S5/2277
摘要： For burying the active strip, two narrow bands are etched on either side of the strip and localized epitaxy repeat takes place on said two bands, which makes it possible to work at lower temperatures. Moreover, the substrate and confinement layer are of type p and the epitaxy repeat layer of highly doped type n.sup.+. The guide layer can be etched to constitute a defractive network.
摘要翻译：为了掩埋活性带，在条的两侧蚀刻两个窄带，并且在所述两条带上进行局部外延重复，这使得可以在较低温度下工作。此外，衬底和约束层是p型和高掺杂型n +的外延重复层。引导层可以被蚀刻以构成折射网络。

30. 发明授权

US4734385A Semiconductor laser element suitable for production by a MO-CVD method 失效
标题翻译：半导体激光元件适用于通过MO-CVD法制造
公开(公告)号：US4734385A
公开(公告)日：1988-03-29
申请号：US29190
申请日：1987-03-23
申请人： Yutaka Mihashi , Yutaka Nagai
发明人： Yutaka Mihashi , Yutaka Nagai
IPC分类号： H01S5/00 , H01S5/223 , H01L21/208 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2237
摘要： A semiconductor laser element includes a first cladding layer of first conductivity type provided on a semiconductor substrate of the first conductivity type; a current blocking layer of a second conductivity type provided on the first cladding layer having a stripe groove from which the first cladding layer and is exposed at the bottom thereof; a light guide layer of the first conductivity type provided covering the current blocking layer, the stripe groove, and the first cladding layer exposed from the groove; an active layer provided on the light guide layer curved in the neighborhood of the stripe groove, whose refractive index is larger than that of the light guide layer; and a second cladding layer of the second conductivity type provided on the active layer, whose refractive index is smaller than that of the active layer.

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