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21. 发明授权

US07868305B2 Technique for ion beam angle spread control 有权
标题翻译：离子束角扩散控制技术
公开(公告)号：US07868305B2
公开(公告)日：2011-01-11
申请号：US11145949
申请日：2005-06-07
申请人： Atul Gupta , Joseph C. Olson
发明人： Atul Gupta , Joseph C. Olson
IPC分类号： H01J37/302
CPC分类号： H01J37/304 , H01J37/1477 , H01J37/3171 , H01J2237/1507 , H01J2237/3045 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L21/26586
摘要： A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.
摘要翻译：公开了一种用于离子束角度扩展控制的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子束角度扩展控制的方法。该方法可以包括以两个或更多个不同的入射角度在衬底表面处引导一个或多个离子束，从而将衬底表面暴露于受控的离子束入射角扩散。

22. 发明授权

US07847271B2 Ion implanting apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US07847271B2
公开(公告)日：2010-12-07
申请号：US12279653
申请日：2007-02-15
申请人： Seiji Ogata , Ryota Fukui , Hidekazu Yokoo , Tsutomu Nishihashi
发明人： Seiji Ogata , Ryota Fukui , Hidekazu Yokoo , Tsutomu Nishihashi
IPC分类号： H01J37/317 , H01J37/256
CPC分类号： H01J37/3171 , H01J2237/05 , H01J2237/083 , H01J2237/31703
摘要： An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.
摘要翻译：用于通过从离子源提取氢离子或稀土离子来制造单晶膜的离子注入机，用第一扇形电磁体选择期望的离子，用扫描仪扫描离子，使离子与第二扇形电磁体，并将其植入基底; 离子源被配置为位于第一扇区电磁体的入射侧焦点附近。在这种情况下，当离子源的提取部分的孔径为圆形并且偏转表面中的入射侧焦点和与第一扇形电磁体垂直的入射侧焦点一致时，通过第一扇形电磁体之后的离子束变得完全平行于两个表面，斑点形状变成圆形。

23. 发明授权

US07791049B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US07791049B2
公开(公告)日：2010-09-07
申请号：US12100973
申请日：2008-04-10
申请人： Mitsukuni Tsukihara , Yoshito Fujii
发明人： Mitsukuni Tsukihara , Yoshito Fujii
IPC分类号： H01J37/317 , G21K5/04
CPC分类号： H01J37/3171 , H01J37/045 , H01J37/244 , H01J37/304 , H01J2237/0213 , H01J2237/151 , H01J2237/24405 , H01J2237/30455 , H01J2237/31703
摘要： A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.
摘要翻译：在光束扫描仪入射之前的光束线布置有喷射器标记法拉第杯，其通过测量离子束的总光束量来检测束流，从而能够将其输入和输出。当通过将注射器标记法拉第杯放置在梁轨迹线上来关闭离子束时，离子束撞击在注射器标记法拉第杯处提供的石墨上。在这种情况下，即使当石墨被离子束溅射时，由于注射器标志法拉第杯布置在射束扫描器的上游侧，并且离子束被注射器标记法拉第杯切断，溅射的石墨颗粒不要附着在注射器标志法拉第杯的周边部件上。

24. 发明授权

US07683347B2 Technique for improving ion implantation throughput and dose uniformity 有权
标题翻译：提高离子注入量和剂量均匀性的技术
公开(公告)号：US07683347B2
公开(公告)日：2010-03-23
申请号：US11537050
申请日：2006-09-29
申请人： Atul Gupta , Anthony Renau , Donna Smatlak , Joseph C. Olson
发明人： Atul Gupta , Anthony Renau , Donna Smatlak , Joseph C. Olson
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/302 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.
摘要翻译：公开了一种改善离子注入通量和剂量均匀性的技术。在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

25. 发明申请

US20100025597A1 ION IMPLANTING DEVICE AND METHOD 审中-公开
标题翻译：离子植入装置和方法
公开(公告)号：US20100025597A1
公开(公告)日：2010-02-04
申请号：US12511447
申请日：2009-07-29
申请人： Ryusuke Kasamatsu
发明人： Ryusuke Kasamatsu
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/304 , H01J2237/20228 , H01J2237/31703
摘要： To reduce the occurrence of stripes in the oscillation direction of a semiconductor wafer which might occur when ion implantation scanning is performed by radiating ions onto the semiconductor wafer while oscillating the semiconductor wafer like a pendulum, the ion implantation of the present invention involves radiating ions while rotating a plurality of semiconductor wafers 28 arranged on a concentric circle circumference around a rotary shaft of a rotary body rotated by a rotary driving mechanism and while oscillating the rotary body like a pendulum by use of an oscillation mechanism which oscillates the rotary body, and scanning the ions over an entire surface of the semiconductor wafer by controlling the rotary driving mechanism, the oscillation mechanism and the radiation timing of the ions. In particular, the whole ion implantation process is divided into two times; an ion implantation scanning pitch of ion beam spots 42 for the second time is set between intervals of an ion implantation scanning pitch in the oscillation direction A of the wafer of ion beam spots 40 for the first time, whereby periodical irregularities of the SOI layer thickness and the BOX layer thickness in the oscillation direction of a wafer are suppressed and the occurrence of stripes is reduced.
摘要翻译：为了减少半导体晶片的摆动方向上的条纹的出现，当通过在半导体晶片像摆时一样振荡半导体晶片时，通过在半导体晶片上照射离子进行离子注入扫描时可能发生的情况，本发明的离子注入涉及辐射离子同时使旋转驱动机构旋转的旋转体的旋转轴周围配置在同心圆周上的多个半导体晶片28，并且通过使用使振动体旋转的摆动机构摆动旋转体而摆动旋转体，扫描通过控制离子的旋转驱动机构，振荡机制和辐射定时，在半导体晶片的整个表面上的离子。特别地，整个离子注入过程分为两次; 第一次离子束斑42的离子注入扫描间距第一次设置在离子束点40的晶片的振荡方向A上的离子注入扫描间距的间隔之间，由此SOI层厚度的周期性不规则并且晶片的振荡方向的BOX层厚度被抑制，并且条纹的发生减少。

26. 发明授权

US07642529B2 Method of determining angle misalignment in beam line ion implanters 有权
标题翻译：确定梁线离子注入机中角度偏差的方法
公开(公告)号：US07642529B2
公开(公告)日：2010-01-05
申请号：US11541373
申请日：2006-09-29
申请人： Atul Gupta , Joseph C. Olson
发明人： Atul Gupta , Joseph C. Olson
IPC分类号： H01J37/317
CPC分类号： H01L22/14 , H01J37/1471 , H01J37/3171 , H01J2237/1501 , H01J2237/24528 , H01J2237/24535 , H01J2237/24578 , H01J2237/3045 , H01J2237/31703
摘要： A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data. A method of determining a substrate miscut is also provided.
摘要翻译：一种方法包括将离子束相对于衬底的目标表面以多个不同的入射角引导，以将离子注入到衬底的多个部分中，其中多个不同入射角中的每一个与不同的入射角相关联多个部分中的一个，测量来自基板的多个部分中的每个部分的角度敏感数据，以及从角度敏感数据确定入射到目标表面上的目标表面和离子束之间的角度偏移。还提供了确定衬底杂交的方法。

27. 发明申请

US20090261248A1 ION BEAM APPARATUS AND METHOD EMPLOYING MAGNETIC SCANNING 有权
标题翻译：离子束设备和采用磁性扫描的方法
公开(公告)号：US20090261248A1
公开(公告)日：2009-10-22
申请号：US12301557
申请日：2007-06-13
申请人： Hilton F. Glavish , Thomas N. Horsky , Dale C. Jacobson , Sami K. Hahto , Masao Naito , Nobuo Nagai , Nariaki Hamamoto
发明人： Hilton F. Glavish , Thomas N. Horsky , Dale C. Jacobson , Sami K. Hahto , Masao Naito , Nobuo Nagai , Nariaki Hamamoto
IPC分类号： H01J49/00 , A61N5/00
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/09 , H01J2237/0044 , H01J2237/0455 , H01J2237/047 , H01J2237/0492 , H01J2237/057 , H01J2237/14 , H01J2237/30477 , H01J2237/31703 , H01L21/26513
摘要： A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line.
摘要翻译：一种多用途离子注入机束线配置，包括质量分析器磁体，随后是磁扫描器和磁准直器组合，其将弯曲引入到光束路径，所述束线被构造用于使得能够注入常见的单原子掺杂离子种类簇离子，所述束线配置具有质量分析器磁体限定磁体的铁磁极之间的相当宽度的磁极间隙和质量选择孔，分析器磁体的尺寸设计成接受来自至少约80mm高度的槽形离子源提取孔的离子束，并且在至少约7mm的宽度，并且在对应于梁的宽度的平面中的质量选择孔处产生分散体，质量选择孔能够被设定为质量选择宽度，该质量选择宽度的尺寸被选择为选择聚集离子的束相同的掺杂物种类但递增不同的分子量，质量选择孔径也能够基本上被设定较窄的质量选择宽度和具有质量选择孔径的分辨率的分析器磁体足以能够选择基本上单一原子或分子量的单原子掺杂离子束，磁扫描器和磁准直器被构造为连续弯曲离子在相同意义上的光束，其与由光束线的分析器磁体引入的弯曲的方向相反。

28. 发明申请

US20090236547A1 EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER 有权
标题翻译：用于高电流离子植入物的提取电极系统
公开(公告)号：US20090236547A1
公开(公告)日：2009-09-24
申请号：US12050594
申请日：2008-03-18
申请人： Yongzhang Huang , Ilya Pokidov
发明人： Yongzhang Huang , Ilya Pokidov
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J37/09 , H01J37/20 , H01J2237/0458 , H01J2237/083 , H01J2237/20214 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/30483 , H01J2237/31703
摘要： A system and method extraction electrode system, comprising an extraction electrode, wherein the extraction electrode, further defines an aperture and forms a portion of the outside wall of the ion source and is configured to extract ions from the ion source, a suppression disk half assembly comprising two suppression electrode plate disk halves that form a variable suppression aperture, a ground disk half assembly comprising two ground electrode plate disk halves that form an variable ground aperture, wherein the suppression disk half assembly is configured between the extraction electrode and the ground disk half assembly, wherein the suppression aperture and the ground aperture variable in the direction perpendicular to the ion beam direction of travel, and wherein the extraction electrode system is used with a pendulum reciprocating drive apparatus.
摘要翻译：一种系统和方法提取电极系统，包括提取电极，其中所述提取电极还限定孔并形成离子源的外壁的一部分，并且被配置为从离子源提取离子，抑制盘半组件包括形成可变抑制孔径的两个抑制电极板半部，包括形成可变接地孔的两个接地电极板半部的接地盘半组件，其中抑制盘半组件配置在提取电极和接地盘半部之间组件，其中所述抑制孔径和所述接地孔径在垂直于所述离子束行进方向的方向上可变，并且其中所述引出电极系统与摆锤往复驱动装置一起使用。

29. 发明授权

US07554106B2 Partial ion implantation apparatus and method using bundled beam 有权
标题翻译：部分离子注入装置和使用捆束的方法
公开(公告)号：US07554106B2
公开(公告)日：2009-06-30
申请号：US11445643
申请日：2006-06-01
申请人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
发明人： Kyoung Bong Rouh , Seung Woo Jin , Min Yong Lee , Yong Soo Jung
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3172 , H01J37/045 , H01J2237/30472 , H01J2237/31703 , H01J2237/31708
摘要： An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.
摘要翻译：离子注入装置包括用于产生初始离子束的离子束源，捆扎离子束发生器，其适于基于预定频率将初始离子束改变成束状离子束，以在经过第一次时通过束状离子束初始离子束第二次，用于加速已经通过离子束发生器的离子束的束线，以及用于在其中布置晶片以使由束线加速的离子束被植入晶片的终端站，所述终端站操作以沿垂直于离子束注入方向的方向移动所述晶片，以将所述束状离子束注入所述晶片的第一区域中，并将所述初始离子束注入所述晶片的第二区域。

30. 发明授权

US07541601B2 Ion beam irradiating apparatus and method of adjusting uniformity of a beam 有权
标题翻译：离子束照射装置及调整光束均匀度的方法
公开(公告)号：US07541601B2
公开(公告)日：2009-06-02
申请号：US11640931
申请日：2006-12-19
申请人： Tadashi Ikejiri
发明人： Tadashi Ikejiri
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/09 , H01J37/304 , H01J2237/0455 , H01J2237/0458 , H01J2237/24405 , H01J2237/2446 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/31703
摘要： An ion beam irradiating apparatus has: a beam profile monitor 14 which measures a beam current density distribution in y direction of an ion beam 4 in the vicinity of a target 8; movable shielding plate groups 18a, 18b respectively having plural movable shielding plates 16 which are arranged in the y direction so as to be opposed to each other across an ion beam path on an upstream side of the position of the target, the movable shielding plates being mutually independently movable in x direction; shielding-plate driving devices 22a, 22b which reciprocally drive the movable shielding plates 16 constituting the groups, in the x direction in a mutually independent manner; and a shielding-plate controlling device 24 which, on the basis of measurement information obtained by the monitor 14, controls the shielding-plate driving devices 22a, 22b to relatively increase an amount of blocking the ion beam 4 by the opposed movable shielding plates 16 which correspond to a position where a measured y-direction beam current density is relatively large, thereby uniformity of the beam current density distribution in the y direction.
摘要翻译：离子束照射装置具有：测量靶8附近的离子束4的y方向的束电流密度分布的光束轮廓监视器14; 可移动屏蔽板组18a，18b分别具有多个可移动屏蔽板16，它们沿着y方向布置成在目标的位置的上游侧的离子束路径彼此相对，可动屏蔽板是可在x方向互相独立移动; 屏蔽板驱动装置22a，22b，以相互独立的方式在x方向上往复驱动构成组的可动屏蔽板16; 以及屏蔽板控制装置24，其基于由监视器14获得的测量信息，控制屏蔽板驱动装置22a，22b，以相对增加由相对的可动屏蔽板16阻挡离子束4的量其对应于测量的y方向电流密度相对较大的位置，从而在y方向上的束电流密度分布的均匀性。

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