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1. 发明授权

US08702920B2 Repeller structure and ion source 有权
标题翻译：排斥结构和离子源
公开(公告)号：US08702920B2
公开(公告)日：2014-04-22
申请号：US12877170
申请日：2010-09-08
申请人： Tadashi Ikejiri , Tetsuya Igo , Takatoshi Yamashita
发明人： Tadashi Ikejiri , Tetsuya Igo , Takatoshi Yamashita
IPC分类号： C23C14/00
CPC分类号： H01J27/022
摘要： A repeller structure is provided in a plasma generating chamber of an ion source facing a cathode that emits electrons for ionizing a source gas in the plasma generating chamber to generate a plasma. The repeller structure reflects the ions toward the cathode. The repeller structure includes a sputtering target that is sputtered by the plasma to emit predetermined ions, the sputtering target including a through hole that connects a sputtering surface and a back surface of the sputtering target; and an electrode body that is inserted in the through hole, the electrode body including a repeller surface that is exposed to the sputtering surface side through the through hole.
摘要翻译：在面向阴极的离子源的等离子体发生室中设置了排斥结构，该阴极发射用于电离等离子体发生室中的源气体的电子以产生等离子体。排斥结构将离子反射向阴极。反射器结构包括由等离子体溅射以发射预定离子的溅射靶，溅射靶包括连接溅射表面和溅射靶的后表面的通孔; 以及电极体，其插入在所述通孔中，所述电极体包括通过所述通孔暴露于所述溅射表面侧的反射器表面。

2. 发明授权

US08253114B2 Ion source 有权
标题翻译：离子源
公开(公告)号：US08253114B2
公开(公告)日：2012-08-28
申请号：US12547176
申请日：2009-08-25
申请人： Takatoshi Yamashita , Tadashi Ikejiri , Tetsuya Igo
发明人： Takatoshi Yamashita , Tadashi Ikejiri , Tetsuya Igo
IPC分类号： H01J27/02
CPC分类号： H01J27/14
摘要： An ion source includes a plasma generating chamber into which an ionization gas containing fluorine is introduced, a hot cathode provided on one side in the plasma generating chamber, an opposing reflecting electrode which is provided on other side in the plasma generating chamber and reflects electrons when a negative voltage is applied from a bias power supply to the opposing reflecting electrode, and a magnet for generating a magnetic field along a line, which connects the hot cathode and the opposing reflecting electrode, in the plasma generating chamber. The opposing reflecting electrode is formed of an aluminum containing material.
摘要翻译：离子源包括等离子体产生室，其中引入含氟的电离气体，设置在等离子体发生室一侧的热阴极，设置在等离子体发生室的另一侧的相反的反射电极，从偏置电源施加负电压到相对的反射电极，以及用于在等离子体产生室中沿着连接热阴极和相对的反射电极的线产生磁场的磁体。相对的反射电极由含铝材料形成。

3. 发明申请

US20100051825A1 ION SOURCE 有权
标题翻译：离子源
公开(公告)号：US20100051825A1
公开(公告)日：2010-03-04
申请号：US12547176
申请日：2009-08-25
申请人： Takatoshi Yamashita , Tadashi Ikejiri , Tetsuya Igo
发明人： Takatoshi Yamashita , Tadashi Ikejiri , Tetsuya Igo
IPC分类号： H01J27/02
CPC分类号： H01J27/14
摘要： An ion source includes a plasma generating chamber into which an ionization gas containing fluorine is introduced, a hot cathode provided on one side in the plasma generating chamber, an opposing reflecting electrode which is provided on other side in the plasma generating chamber and reflects electrons when a negative voltage is applied from a bias power supply to the opposing reflecting electrode, and a magnet for generating a magnetic field along a line, which connects the hot cathode and the opposing reflecting electrode, in the plasma generating chamber. The opposing reflecting electrode is formed of an aluminum containing material.
摘要翻译：离子源包括等离子体产生室，其中引入含氟的电离气体，设置在等离子体发生室一侧的热阴极，设置在等离子体发生室的另一侧的相反的反射电极，从偏置电源施加负电压到相对的反射电极，以及用于在等离子体产生室中沿着连接热阴极和相对的反射电极的线产生磁场的磁体。相对的反射电极由含铝材料形成。

4. 发明申请

US20090212232A1 ION SOURCE AND ION IMPLANTATION APPARATUS 失效
标题翻译：离子源和离子植入装置
公开(公告)号：US20090212232A1
公开(公告)日：2009-08-27
申请号：US12391919
申请日：2009-02-24
申请人： Takatoshi Yamashita , Tadashi Ikejiri
发明人： Takatoshi Yamashita , Tadashi Ikejiri
IPC分类号： H01J27/00
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J2237/082 , H01J2237/24507 , H01J2237/24521 , H01J2237/24535 , H01J2237/24542 , H01J2237/30472 , H01J2237/31703
摘要： An ion source is to extract a ribbon-shaped ion beam longer in the Y direction in the Z direction and provided with a plasma generating chamber, a plasma electrode which is disposed near the end of the plasma generating chamber in the Z direction and has an ion extracting port extending in the Y direction, a plurality of cathodes for emitting electrons into the plasma generating chamber to generate a plasma and arranged in a plurality of stages along the Y direction, and a magnetic coil which generates magnetic fields along the Z direction in a domain containing the plurality of cathodes inside the plasma generating chamber.
摘要翻译：离子源是在Z方向上在Y方向上提取长度较长的带状离子束，并设置有等离子体发生室，等离子体电极，其设置在等离子体产生室的Z方向的端部附近，具有在Y方向上延伸的离子提取口，多个用于将电子发射到等离子体发生室中的阴极，以产生等离子体并且沿着Y方向分布在多个级中;以及磁线圈，沿着Z方向产生磁场包含等离子体发生室内部的多个阴极的畴。

5. 发明授权

US08389964B2 Ion implanting apparatus and deflecting electrode 有权
标题翻译：离子注入装置和偏转电极
公开(公告)号：US08389964B2
公开(公告)日：2013-03-05
申请号：US13128893
申请日：2009-08-31
申请人： Tetsuya Igo , Tadashi Ikejiri , Takatoshi Yamashita
发明人： Tetsuya Igo , Tadashi Ikejiri , Takatoshi Yamashita
IPC分类号： H01J37/00 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/147 , H01J2237/24528
摘要： An ion implanting apparatus includes: an electrostatic accelerating tube for causing an ion beam extracted from an ion source to have a desirable energy, and deflecting the ion beam to be incident on a target, the electrostatic accelerating tube including deflecting electrodes provided to interpose the ion beam therebetween. The deflecting electrodes include a first deflecting electrode and a second deflecting electrode to which different electric potentials from each other are set. The second deflecting electrode is provided on a side where the ion beam is to be deflected and includes an upstream electrode provided on an upstream side of the ion beam and a downstream electrode provided apart from the upstream electrode toward a downstream side. An electric potential of the upstream electrode and an electric potential of the downstream electrode are independently set from each other.
摘要翻译：离子注入装置包括：静电加速管，用于使从离子源提取的离子束具有期望的能量，并使离子束偏转以入射到靶上，所述静电加速管包括设置成插入离子的偏转电极梁之间。偏转电极包括设置彼此不同电位的第一偏转电极和第二偏转电极。第二偏转电极设置在离子束被偏转的一侧，并且包括设置在离子束的上游侧的上游电极和从上游电极向下游侧设置的下游电极。上游电极的电位和下游电极的电位彼此独立地设定。

6. 发明授权

US07791041B2 Ion source, ion implantation apparatus, and ion implantation method 有权
标题翻译：离子源，离子注入装置和离子注入方法
公开(公告)号：US07791041B2
公开(公告)日：2010-09-07
申请号：US12233151
申请日：2008-09-18
申请人： Takatoshi Yamashita , Tadashi Ikejiri , Keiko Kuzawa , Hideyuki Fujiwara
发明人： Takatoshi Yamashita , Tadashi Ikejiri , Keiko Kuzawa , Hideyuki Fujiwara
IPC分类号： H01J37/08 , H01J27/02 , H01J27/08
CPC分类号： H01J27/14 , H01J37/08 , H01J37/3171 , H01J2237/061 , H01J2237/082 , H01J2237/083 , H01J2237/24542 , H01J2237/304 , H01J2237/30472 , H01J2237/31708 , H01J2237/3171
摘要： This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.
摘要翻译：该离子源产生其Y方向的尺寸大于X方向的尺寸的带状离子束。该离子源包括具有沿Y方向延伸的离子提取口的等离子体发生容器，在等离子体发生容器中沿着X方向的一侧沿着Y方向排列成多个的多个阴极，反射电极配置在与阴极相反的等离子体发生容器中的X方向的另一侧，以及用于在等离子体发生容器中包括多个阴极的区域沿着X方向产生磁场的电磁体。

7. 发明授权

US07541601B2 Ion beam irradiating apparatus and method of adjusting uniformity of a beam 有权
标题翻译：离子束照射装置及调整光束均匀度的方法
公开(公告)号：US07541601B2
公开(公告)日：2009-06-02
申请号：US11640931
申请日：2006-12-19
申请人： Tadashi Ikejiri
发明人： Tadashi Ikejiri
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/09 , H01J37/304 , H01J2237/0455 , H01J2237/0458 , H01J2237/24405 , H01J2237/2446 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/31703
摘要： An ion beam irradiating apparatus has: a beam profile monitor 14 which measures a beam current density distribution in y direction of an ion beam 4 in the vicinity of a target 8; movable shielding plate groups 18a, 18b respectively having plural movable shielding plates 16 which are arranged in the y direction so as to be opposed to each other across an ion beam path on an upstream side of the position of the target, the movable shielding plates being mutually independently movable in x direction; shielding-plate driving devices 22a, 22b which reciprocally drive the movable shielding plates 16 constituting the groups, in the x direction in a mutually independent manner; and a shielding-plate controlling device 24 which, on the basis of measurement information obtained by the monitor 14, controls the shielding-plate driving devices 22a, 22b to relatively increase an amount of blocking the ion beam 4 by the opposed movable shielding plates 16 which correspond to a position where a measured y-direction beam current density is relatively large, thereby uniformity of the beam current density distribution in the y direction.
摘要翻译：离子束照射装置具有：测量靶8附近的离子束4的y方向的束电流密度分布的光束轮廓监视器14; 可移动屏蔽板组18a，18b分别具有多个可移动屏蔽板16，它们沿着y方向布置成在目标的位置的上游侧的离子束路径彼此相对，可动屏蔽板是可在x方向互相独立移动; 屏蔽板驱动装置22a，22b，以相互独立的方式在x方向上往复驱动构成组的可动屏蔽板16; 以及屏蔽板控制装置24，其基于由监视器14获得的测量信息，控制屏蔽板驱动装置22a，22b，以相对增加由相对的可动屏蔽板16阻挡离子束4的量其对应于测量的y方向电流密度相对较大的位置，从而在y方向上的束电流密度分布的均匀性。

8. 发明授权

US06651582B2 Method and device for irradiating an ion beam, and related method and device thereof 失效
公开(公告)号：US06651582B2
公开(公告)日：2003-11-25
申请号：US09987112
申请日：2001-11-13
申请人： Shigeki Sakai , Tadashi Ikejiri
发明人： Shigeki Sakai , Tadashi Ikejiri
IPC分类号： C23C1600
CPC分类号： H01J37/026 , H01J2237/004 , H01J2237/31701 , H01L21/2236
摘要： When ion beam 14 is irradiated onto a substrate 2 to conduct processing such as ion injection, plasma 30 emitted from a plasma generating device 20 is supplied to a portion close to the substrate 2 to suppress electric charging on a substrate surface caused by ion beam irradiation. A ratio of IE/IB is kept at a value not lower than 1.8, a ratio of II /IE is kept at a value not lower than 0.07 and not higher than 0.7, wherein IB is an electric current of the ion beam 14 irradiated onto the substrate 2, II is an ion current expressing a quantity of ions in the plasma 30 emitted from the plasma generating device 20, and IE is an electron current expressing a quantity of electrons in the plasma 30.

9. 发明授权

US07635850B2 Ion implanter 失效
标题翻译：离子注入机
公开(公告)号：US07635850B2
公开(公告)日：2009-12-22
申请号：US11870333
申请日：2007-10-10
申请人： Takatoshi Yamashita , Tadashi Ikejiri , Kohei Tanaka , Weijiang Zhao , Hideyuki Tanaka
发明人： Takatoshi Yamashita , Tadashi Ikejiri , Kohei Tanaka , Weijiang Zhao , Hideyuki Tanaka
IPC分类号： H01J37/317 , H01J37/147 , H01J3/14
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/047 , H01J2237/055 , H01J2237/12 , H01J2237/15
摘要： An analyzing electromagnet constituting an ion implanter has a first inner coil, a second inner coil, three first outer coils, three second outer coils, and a yoke. The inner coils are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field. Each of the coils has a configuration where a notched portion is disposed in a fan-shaped cylindrical stacked coil configured by: winding a laminations of an insulation sheet and a conductor sheet in multiple turn on an outer peripheral face of a laminated insulator; and forming a laminated insulator on an outer peripheral face.
摘要翻译：构成离子注入机的分析电磁铁具有第一内线圈，第二内线圈，三个第一外线圈，三个第二外线圈和轭。内部线圈是彼此协作的鞍形线圈，以产生在X方向上使离子束弯曲的主磁场。每个外部线圈是产生校正主磁场的子磁场的鞍形线圈。每个线圈具有其中凹口部分设置在扇形圆柱形堆叠线圈中的构造，该扇形圆柱形堆叠线圈通过以下方式构成：在层压绝缘体的外周面上多层卷绕绝缘片和导体片的叠层; 以及在外周面上形成层压绝缘体。

10. 发明申请

US20080135777A1 ION IMPLANTER 失效
标题翻译：离子植入物
公开(公告)号：US20080135777A1
公开(公告)日：2008-06-12
申请号：US11870333
申请日：2007-10-10
申请人： Takatoshi Yamashita , Tadashi Ikejiri , Kohei Tanaka , Weijiang Zhao , Hideyuki Tanaka
发明人： Takatoshi Yamashita , Tadashi Ikejiri , Kohei Tanaka , Weijiang Zhao , Hideyuki Tanaka
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/047 , H01J2237/055 , H01J2237/12 , H01J2237/15
摘要： The projection distances of connecting portions of a coil are reduced, thereby enabling the size and power consumption of an analyzing electromagnet to be reduced, and therefore the size and power consumption of an ion implanting apparatus are enabled to be reduced.[Means for Resolution] An analyzing electromagnet 200 constituting an ion implanting apparatus has a first inner coil 206, a second inner coil 212, three first outer coils 218, three second outer coils 224, and a yoke 230. The inner coils 206, 212 are saddle-shaped coils cooperating with each other to generate a main magnetic field which bends an ion beam in the X direction. Each of the outer coils 218, 224 is a saddle-shaped coil which generates a sub-magnetic field correcting the main magnetic field. Each of the coils has a configuration where a notched portion is disposed in a fan-shaped cylindrical stacked coil configured by: winding a laminations of an insulation sheet and a conductor sheet in multiple turn on an outer peripheral face of a laminated insulator; and forming a laminated insulator on an outer peripheral face,
摘要翻译：线圈的连接部分的投影距离减小，从而能够降低分析电磁铁的尺寸和功率消耗，从而能够减小离子注入装置的尺寸和功耗。 [分辨装置]构成离子注入装置的分析电磁体200具有第一内线圈206，第二内线圈212，三个第一外线圈218，三个第二外线圈224和轭230。内部线圈206,212是彼此协作的鞍形线圈，以产生在X方向上弯曲离子束的主磁场。外部线圈218,224中的每一个是产生校正主磁场的子磁场的鞍形线圈。每个线圈具有其中凹口部分设置在扇形圆柱形堆叠线圈中的构造，该扇形圆柱形堆叠线圈通过以下方式构成：在层压绝缘体的外周面上多层卷绕绝缘片和导体片的叠层; 并在外周面上形成层压绝缘体，

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