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1. 发明申请

US20090072164A1 ION IMPLANTING APPARATUS 有权
标题翻译：离子植入装置
公开(公告)号：US20090072164A1
公开(公告)日：2009-03-19
申请号：US12279653
申请日：2007-02-15
申请人： Seiji Ogata , Ryota Fukui , Hidekazu Yokoo , Tsutomu Nishihashi
发明人： Seiji Ogata , Ryota Fukui , Hidekazu Yokoo , Tsutomu Nishihashi
IPC分类号： G21K5/00
CPC分类号： H01J37/3171 , H01J2237/05 , H01J2237/083 , H01J2237/31703
摘要： An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.
摘要翻译：用于通过从离子源提取氢离子或稀土离子来制造单晶膜的离子注入机，用第一扇形电磁体选择期望的离子，用扫描仪扫描离子，使离子与第二扇形电磁体，并将其植入基底; 离子源被配置为位于第一扇区电磁体的入射侧焦点附近。在这种情况下，当离子源的提取部分的孔径为圆形并且偏转表面中的入射侧焦点和与第一扇形电磁体垂直的入射侧焦点一致时，通过第一扇形电磁体之后的离子束变得完全平行于两个表面，斑点形状变成圆形。

2. 发明授权

US4894546A Hollow cathode ion sources 失效
标题翻译：空心阴极离子源
公开(公告)号：US4894546A
公开(公告)日：1990-01-16
申请号：US164803
申请日：1988-03-07
申请人： Ryota Fukui , Kenichi Takagi , Riichi Kikuchi , Kazuo Takayama , Akira Tonegawa
发明人： Ryota Fukui , Kenichi Takagi , Riichi Kikuchi , Kazuo Takayama , Akira Tonegawa
IPC分类号： H01J27/02 , H01J27/08
CPC分类号： H01J27/08 , H01J27/022
摘要： A hollow cathode ion source for in a vacuum chamber wherein it comprises a cylindrical cathode through one end of which a gaseous medium of at least a discharge maintaining gas or said discharge maintaining gas and a metal vapor is or are introduced, and an anode provided on the other end of said cylindrical cathode and having at least one ion extraction opening, said gaseous medium being ionized by a discharge means between said cylindrical cathode and said anode to produce ions which are extracted through said ion extraction opening in the axial direction of said cylindrical cathode.The cylindrical cathode in the ion source has a large diameter at least about half and preferably about equal to its axial length and may be directly cooled.

3. 发明授权

US07847271B2 Ion implanting apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US07847271B2
公开(公告)日：2010-12-07
申请号：US12279653
申请日：2007-02-15
申请人： Seiji Ogata , Ryota Fukui , Hidekazu Yokoo , Tsutomu Nishihashi
发明人： Seiji Ogata , Ryota Fukui , Hidekazu Yokoo , Tsutomu Nishihashi
IPC分类号： H01J37/317 , H01J37/256
CPC分类号： H01J37/3171 , H01J2237/05 , H01J2237/083 , H01J2237/31703
摘要： An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.
摘要翻译：用于通过从离子源提取氢离子或稀土离子来制造单晶膜的离子注入机，用第一扇形电磁体选择期望的离子，用扫描仪扫描离子，使离子与第二扇形电磁体，并将其植入基底; 离子源被配置为位于第一扇区电磁体的入射侧焦点附近。在这种情况下，当离子源的提取部分的孔径为圆形并且偏转表面中的入射侧焦点和与第一扇形电磁体垂直的入射侧焦点一致时，通过第一扇形电磁体之后的离子束变得完全平行于两个表面，斑点形状变成圆形。

4. 发明授权

US4841197A Double-chamber ion source 失效
标题翻译：双室离子源
公开(公告)号：US4841197A
公开(公告)日：1989-06-20
申请号：US55804
申请日：1987-05-27
申请人： Kazuo Takayama , Eiji Yabe , Kenichi Takagi , Ryota Fukui , Riichi Kikuchi
发明人： Kazuo Takayama , Eiji Yabe , Kenichi Takagi , Ryota Fukui , Riichi Kikuchi
IPC分类号： H01J27/08 , H01J37/08
CPC分类号： H01J27/08 , H01J37/08
摘要： Ion source including an electric discharge chamber body divided by a partition, having an anode electrode therein, into a main discharge chamber and a subsidiary discharge chamber. The subsidiary discharge chamber has a filament mounted therein aligned with at least one small opening through the partition wall and the anode electrode. An inert gas opening is provided into the subsidiary discharge chamber. An electric discharge gas opening and an ion outlet opening are provided to the main discharge chamber. Magnets are provided outside of the chamber body for creating a magnetic field extending nearly along an axis of the at least one small opening in the anode electrode.
摘要翻译：离子源包括由其中具有阳极电极的隔板分隔成主放电室和辅助放电室的放电室主体。辅助排放室具有安装在其中的细丝，其与通过分隔壁和阳极电极的至少一个小开口对准。辅助排气室设有惰性气体开口。放电气体开口和离子出口开口设置到主放电室。磁体设置在室主体的外部，用于产生几乎沿着阳极电极中的至少一个小开口的轴延伸的磁场。

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