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    • 24. 发明申请
    • Ion implanting system
    • 离子注入系统
    • US20030001528A1
    • 2003-01-02
    • US10164612
    • 2002-06-10
    • Young-Byeong Joo
    • H01J023/00
    • H01J37/18H01J2237/1825H01J2237/184H01J2237/31701Y10S417/901
    • An ion implanting system including an ion implanting chamber for implanting an ion into a semiconductor wafer, a load lock chamber for loading the semiconductor wafer into the ion implanting chamber, a turbo pump for creating a high vacuum atmosphere in the load lock chamber, a low vacuum pump for creating a low vacuum atmosphere in the turbo pump, a cryo pump controller for generating a control signal to control a pumping operation of the turbo pump, a control voltage generator for generating a control voltage in response to the control signal generated from the cryo pump controlle, an interface for generating a starting signal in response to the control voltage, and a turbo pump controller for applying a voltage to operate the turbo pump and the low vacuum pump in response to the starting signal output from the interface.
    • 一种离子植入系统,包括用于将离子注入半导体晶片的离子注入室,用于将半导体晶片装载到离子注入室中的负载锁定室,用于在负载锁定室中产生高真空气氛的涡轮泵,低 用于在涡轮泵中产生低真空气氛的真空泵,用于产生控制信号以控制涡轮泵的泵送操作的冷冻泵控制器,控制电压发生器,用于响应于从所述涡轮泵产生的控制信号产生控制电压 低温泵控制器,用于响应于控制电压产生启动信号的接口,以及涡轮泵控制器,用于响应于从接口输出的启动信号,施加电压来操作涡轮泵和低真空泵。