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21. 发明申请

US20130330421A1 COMBINATIONS OF THERAPEUTIC AGENTS FOR TREATING MELANOMA 有权
标题翻译：用于治疗梅毒的治疗药物的组合
公开(公告)号：US20130330421A1
公开(公告)日：2013-12-12
申请号：US13689380
申请日：2012-11-29
申请人： KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D , VIB VZW
发明人： Jean-Christophe Marine
IPC分类号： A61K38/02 , G01N33/50 , A61K31/195 , C12Q1/68 , A61K33/24 , A61K31/496
CPC分类号： A61K38/02 , A61K31/195 , A61K31/496 , A61K33/24 , A61K38/1866 , A61K38/30 , A61K45/06 , C12Q1/6886 , C12Q2600/156 , G01N33/5005 , G01N33/5743 , G01N2800/52
摘要： The present disclosure relates to the field of oncology, more particularly to the field of melanoma. Provided are methods of treating melanoma, particularly advanced cutaneous melanoma, with a combination of pharmaceutical agents comprising MDM4-specific antagonists (such as an inhibitor of the MDM4-p53 interaction or a molecule that decreases MDM4 protein stability) or MDM4-MDM2 dual inhibitors (i.e., molecules that disrupt the interactions between p53 and MDM2 and p53 and MDM4) and one or more chemotherapeutic agents such as for example alkylating agents (i.e., Dacarbazine (DITC) or melphalan), alkylating-like agents (i.e., cisplatin or carboplatin) or mitotic inhibitors (taxanes docetaxel or paclitaxel) and PI3K-AKT, B-RAF and MEK inhibitors. Further provided are pharmaceutical formulations of MDM4-specific antagonists (be it an inhibitor of the MDM4-p53 interaction or a molecule that decreases MDM4 protein stability) or MDM4-MDM2 dual inhibitors (i.e., molecules that disrupt the interactions between p53 and MDM2 and p53 and MDM4) and a pharmaceutical formulation of one or more chemotherapeutic agents such as for example alkylating agents (i.e., Dacarbazine (DITC) or melphalan), alkylating-like agents (i.e., cisplatin or carboplatin) or mitotic inhibitors (taxanes docetaxel or paclitaxel) and B-RAF and MEK inhibitors.
摘要翻译：本公开涉及肿瘤学领域，更具体地涉及黑素瘤领域。提供了通过包含MDM4特异性拮抗剂（例如MDM4-p53相互作用的抑制剂或降低MDM4蛋白稳定性的分子）或MDM4-MDM2双重抑制剂（MDM4-MDM2双重抑制剂）的药物组合治疗黑素瘤，特别是晚期皮肤黑色素瘤的方法，即破坏p53和MDM2与p53和MDM4之间的相互作用的分子）和一种或多种化学治疗剂，例如烷化剂（即达卡巴嗪（DITC）或美法仑）），烷化化试剂（即顺铂或卡铂）或有丝分裂抑制剂（紫杉烷多西紫杉醇或紫杉醇）和PI3K-AKT，B-RAF和MEK抑制剂。还提供了MDM4特异性拮抗剂（无论是MDM4-p53相互作用的抑制剂还是降低MDM4蛋白稳定性的分子）或MDM4-MDM2双重抑制剂（即破坏p53和MDM2与p53之间的相互作用的分子）的药物制剂和MDM4）和一种或多种化学治疗剂的药物制剂，例如烷化剂（即达卡巴嗪（DITC）或美法仑）），烷化化试剂（即顺铂或卡铂）或有丝分裂抑制剂（紫杉烷多西紫杉醇或紫杉醇）和B-RAF和MEK抑制剂。

22. 发明申请

US20130313522A1 GRAPHENE-BASED SEMICONDUCTOR DEVICE 有权
标题翻译：基于石墨的半导体器件
公开(公告)号：US20130313522A1
公开(公告)日：2013-11-28
申请号：US13853572
申请日：2013-03-29
申请人： IMEC , KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D
发明人： Amirhasan Nourbakhsh , Mirco Cantoro , Cedric Huyghebaert , Marc Heyns , Stefan De Gendt
IPC分类号： H01L29/16 , H01L21/02
CPC分类号： H01L29/1606 , B82Y40/00 , H01L21/02376 , H01L21/02527 , H01L21/02612 , H01L29/4908 , H01L29/778 , H01L29/78603 , H01L29/78684 , H01L29/78696 , H01L51/0562 , Y10S977/734
摘要： A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating layer contacting the first graphene layer, the first electrically insulating layer comprising an electrically insulating material, and a substance suitable for creating free charge carriers of a first type in the first graphene layer, the semiconductor device further comprising an electrically insulating region contacting the second graphene layer and suitable for creating free charge carriers of a second type, opposite to the first type, in the second graphene layer.
摘要翻译：提供了一种半导体器件，其包括双层石墨烯，其包括第一和第二相邻的石墨烯层，以及与第一石墨烯层接触的第一电绝缘层，第一电绝缘层包括电绝缘材料和适于产生自由电荷的物质在第一石墨烯层中的第一类型的载流子，所述半导体器件还包括接触第二石墨烯层的电绝缘区域，并且适于在第二石墨烯层中产生与第一类型相反的第二类型的自由载流子。

23. 发明申请

US20130267426A1 MICROSATELLITE INSTABILITY MARKERS IN DETECTION OF CANCER 审中-公开
标题翻译：微卫星不稳定标记检测癌症
公开(公告)号：US20130267426A1
公开(公告)日：2013-10-10
申请号：US13860422
申请日：2013-04-10
申请人： VIB VZW , KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D
发明人： Diether Lambrechts
IPC分类号： C12Q1/68
CPC分类号： C12Q1/6886 , C12Q2600/156
摘要： The present application relates to the field of cancer, particularly to mismatch repair (MMR−) deficient tumors. New markers are presented herein that have a high sensitivity to detect whether a tumor is mismatch repair deficient or not. The markers are particularly mutations in microsatellite regions. Accordingly, methods are provided for diagnosing microsatellite instability of a tumor, comprising determining the presence of these markers. Further, kits are provided to detect the presence of these markers (or subsets thereof) in a sample.
摘要翻译：本申请涉及癌症领域，特别是涉及错配修复（MMR-）缺陷型肿瘤。本文呈现了具有高灵敏度以检测肿瘤是否不匹配修复缺陷的新标记。标记在微卫星区域特别突变。因此，提供了用于诊断肿瘤的微卫星不稳定性的方法，包括确定这些标记的存在。此外，提供试剂盒以检测样品中这些标记物（或其子集）的存在。

24. 发明授权

US08536662B2 Method of manufacturing a semiconductor device and semiconductor devices resulting therefrom 有权
标题翻译：制造半导体器件的方法和由此产生的半导体器件
公开(公告)号：US08536662B2
公开(公告)日：2013-09-17
申请号：US12955629
申请日：2010-11-29
申请人： Ann Witvrouw , Luc Haspeslagh , Bin Guo , Simone Severi , Gert Claes
发明人： Ann Witvrouw , Luc Haspeslagh , Bin Guo , Simone Severi , Gert Claes
IPC分类号： H01L27/14
CPC分类号： B81C1/00333 , B81B2201/0257 , B81B2201/0264
摘要： A method is disclosed for manufacturing a semiconductor device, including providing a substrate comprising a main surface with a non flat topography, the surface comprising at least one substantial topography variation, forming a first capping layer over the main surface such that, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluid to pass through. Associated membrane layers, capping layers, and microelectronic devices are also disclosed.
摘要翻译：公开了一种用于制造半导体器件的方法，包括提供包括具有非平坦形貌的主表面的衬底，所述表面包括至少一个实质形貌变化，在主表面上形成第一覆盖层，使得在形成第一覆盖层引入第一覆盖层中的局部缺陷，局部缺陷位于与实质形貌变化相对应的位置处，并且局部缺陷适于允许预定流体通过。还公开了相关膜层，覆盖层和微电子器件。

25. 发明授权

US08487386B2 Method for forming MEMS devices having low contact resistance and devices obtained thereof 有权
标题翻译：用于形成具有低接触电阻的MEMS器件的方法及其获得的器件
公开(公告)号：US08487386B2
公开(公告)日：2013-07-16
申请号：US12817631
申请日：2010-06-17
申请人： Ajay Jain , Simone Severi , Gert Claes , John Heck
发明人： Ajay Jain , Simone Severi , Gert Claes , John Heck
IPC分类号： H01L27/14
CPC分类号： B81C1/00246 , B81B2203/0118 , B81B2207/015 , B81B2207/07 , B81C2203/0714 , B81C2203/0735
摘要： The present disclosure proposes a method for manufacturing in a MEMS device a low-resistance contact between a silicon-germanium layer and a layer contacted by this silicon-germanium layer, such as a CMOS metal layer or another silicon-germanium layer, through an opening in a dielectric layer stack separating both layers. An interlayer is formed in this opening, thereby covering at least the sidewalls of the opening on the exposed surface of the another layer at the bottom of this opening. This interlayer may comprise a TiN layer in contact with the silicon-germanium layer. This interlayer can further comprise a Ti layer in between the TiN layer and the layer to be contacted. In another embodiment this interlayer comprises a TaN layer in contact with the silicon-germanium layer. This interlayer can then further comprise a Ta layer in between the TaN layer and the layer to be contacted.
摘要翻译：本公开提出了一种用于在MEMS器件中制造硅 - 锗层与由该硅 - 锗层接触的层之间的低电阻接触的方法，例如CMOS金属层或另一硅 - 锗层，通过开口在分离两层的电介质层叠层中。在该开口中形成中间层，从而至少覆盖在该开口底部的另一层的露出表面上的开口的至少侧壁。该中间层可以包括与硅 - 锗层接触的TiN层。该中间层可以进一步包括在TiN层和待接触层之间的Ti层。在另一个实施方案中，该中间层包括与硅 - 锗层接触的TaN层。然后该中间层可以进一步包括在TaN层和待接触层之间的Ta层。

26. 发明授权

US08404545B2 Tunnel field-effect transistor with gated tunnel barrier 有权
标题翻译：具有门控隧道势垒的隧道场效应晶体管
公开(公告)号：US08404545B2
公开(公告)日：2013-03-26
申请号：US13353607
申请日：2012-01-19
申请人： William G. Vandenberghe , Anne S. Verhulst
发明人： William G. Vandenberghe , Anne S. Verhulst
IPC分类号： H01L29/66
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/0673 , H01L29/068 , H01L29/7391
摘要： A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to the shorter gate, the total gate capacitance is reduced, which is directly reflected in an improved switching speed of the device. In addition to the advantage of an improved switching speed, the transistor also has a processing advantage (no alignment of the gate with the drain is necessary), as well as a performance improvement (the ambipolar behavior of the TFET is reduced).
摘要翻译：公开了隧道场效应晶体管（TFET）。在一个方面，晶体管包括不与漏极对准的栅极，并且仅与至少延伸到源极沟道区域的界面的源重叠并且可选地与沟道的一部分重叠。由于较短的栅极，总栅极电容减小，这直接反映在器件的改进的开关速度。除了提高开关速度的优点之外，晶体管还具有处理优点（不需要栅极与漏极的对准），以及性能改善（TFET的双极性能降低）。

27. 发明申请

US20130035867A1 INTENSITY NORMALIZATION IN IMAGING MASS SPECTROMETRY 审中-公开
标题翻译：强化标准化成像质谱法
公开(公告)号：US20130035867A1
公开(公告)日：2013-02-07
申请号：US13640367
申请日：2011-04-12
申请人： Bart De Moor , Raf Van De Plas , Etienne Waelkens
发明人： Bart De Moor , Raf Van De Plas , Etienne Waelkens
IPC分类号： G01N33/48 , H01J49/26 , G06F19/00
CPC分类号： G06K9/38 , G06K9/40 , H01J49/0004
摘要： The present invention relates generally to a species (analyte) separation and analysis system, for instance a spectrometry system, comprising a processor for receiving and processing signals from said its detector to remove undesirable variation or noise before further processing into a spectrum, whereby the processor is programmed by a novel program, for a normalization preprocessing of the signals of said separation and analysis system.
摘要翻译：本发明一般涉及物质（分析物）分离和分析系统，例如光谱测定系统，其包括处理器，用于在进一步处理成光谱之前从所述检测器接收和处理信号以去除不期望的变化或噪声，由此处理器通过新颖程序编程，用于对所述分离和分析系统的信号进行标准化预处理。

28. 发明授权

US08338296B2 Method for forming a catalyst suitable for growth of carbon nanotubes 有权
标题翻译：形成适合碳纳米管生长的催化剂的方法
公开(公告)号：US08338296B2
公开(公告)日：2012-12-25
申请号：US13096310
申请日：2011-04-28
申请人： Hari Pathangi Sriraman , Ann Witvrouw , Philippe M. Vereecken
发明人： Hari Pathangi Sriraman , Ann Witvrouw , Philippe M. Vereecken
IPC分类号： H01L21/441
CPC分类号： B01J23/74 , B01J23/755 , B01J35/0013 , B01J37/347 , B01J37/348 , B82Y30/00 , B82Y40/00 , C01B32/162 , H01L29/0673
摘要： The present disclosure is related to a method for forming a catalyst nanoparticle on a metal surface, the nanoparticle being suitable for growing a single nanostructure, in particular a carbon nanotube, the method comprising at least the steps of: providing a substrate, having a metal layer on at least a portion of the substrate surface, depositing a sacrificial layer at least on the metal layer, producing a small hole in the sacrificial layer, thereby exposing the metal layer, providing a single catalyst nanoparticle into the hole, removing the sacrificial layer. The disclosure is further related to growing a carbon nanotube from the catalyst nanoparticle.
摘要翻译：本公开涉及在金属表面上形成催化剂纳米颗粒的方法，所述纳米颗粒适于生长单个纳米结构，特别是碳纳米管，所述方法至少包括以下步骤：提供具有金属的基材在衬底表面的至少一部分上层叠，至少在金属层上沉积牺牲层，在牺牲层中产生小孔，由此暴露金属层，向单孔提供单个催化剂纳米颗粒，去除牺牲层。本公开还涉及从催化剂纳米颗粒生长碳纳米管。

29. 发明申请

US20120258544A1 Plasmonic Force Manipulation in Nanostructures 有权
标题翻译：纳米结构中的等离子体力学操作
公开(公告)号：US20120258544A1
公开(公告)日：2012-10-11
申请号：US13518570
申请日：2010-12-24
申请人： Chang Chen , Pol Van Dorpe , Kai Cheng , Tim Stakenborg , Liesbet Lagae
发明人： Chang Chen , Pol Van Dorpe , Kai Cheng , Tim Stakenborg , Liesbet Lagae
IPC分类号： G01N21/65
CPC分类号： B82Y15/00 , C12Q1/6869 , G01N33/48721 , G01N33/538 , Y10T436/143333 , C12Q2565/631 , C12Q2565/607
摘要： A system (100) is described for characterizing and/or manipulating molecules. The system may especially be suitable for biological molecules, although the invention is not limited thereto. The system (100) comprises a substrate (110) comprising a nanostructure (120) being suitable for translocation of molecules through the nanostructure (120). It furthermore comprises a means (210) for translocating molecules through the nanostructure (120) and a plasmonic force field generating means (130) adapted for influencing the translocation speed of the particle by applying a plasmonic force field at the nanostructure (120). A corresponding method also is described.
摘要翻译：描述了用于表征和/或操纵分子的系统（100）。该系统可以特别适用于生物分子，尽管本发明不限于此。该系统（100）包括一个衬底（110），该衬底（110）包括适合于通过纳米结构（120）的分子易位的纳米结构（120）。它还包括用于使分子转移通过纳米结构（120）的装置（210）和适于通过在纳米结构（120）处施加等离子体力场来影响颗粒的易位速度的等离子体激元场产生装置（130）。还描述了相应的方法。

30. 发明授权

US08267306B2 Selection systems 有权
标题翻译：选择系统
公开(公告)号：US08267306B2
公开(公告)日：2012-09-18
申请号：US12452929
申请日：2008-07-31
申请人： Antoon Bosselaers , Daniel De Cock , Bart Preneel , Frederik Vercauteren
发明人： Antoon Bosselaers , Daniel De Cock , Bart Preneel , Frederik Vercauteren
IPC分类号： G07C13/00
CPC分类号： G07C13/00 , B42D15/00
摘要： The present invention relates generally to a system and method to guarantee that a personal choice corresponds with an electronic encoding of this choice and, more particularly, to a system and method for its production, and allows the verification to a human that his or her choice has been taken into account which is easily auditable.
摘要翻译：本发明一般涉及一种保证个人选择与该选择的电子编码相对应的系统和方法，更具体地，涉及一种用于其生产的系统和方法，并允许向人类验证他或她的选择已被考虑到容易审核。

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