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1. 发明申请

US20130313522A1 GRAPHENE-BASED SEMICONDUCTOR DEVICE 有权
标题翻译：基于石墨的半导体器件
公开(公告)号：US20130313522A1
公开(公告)日：2013-11-28
申请号：US13853572
申请日：2013-03-29
申请人： IMEC , KATHOLIEKE UNIVERSITEIT LEUVEN, K.U. LEUVEN R&D
发明人： Amirhasan Nourbakhsh , Mirco Cantoro , Cedric Huyghebaert , Marc Heyns , Stefan De Gendt
IPC分类号： H01L29/16 , H01L21/02
CPC分类号： H01L29/1606 , B82Y40/00 , H01L21/02376 , H01L21/02527 , H01L21/02612 , H01L29/4908 , H01L29/778 , H01L29/78603 , H01L29/78684 , H01L29/78696 , H01L51/0562 , Y10S977/734
摘要： A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating layer contacting the first graphene layer, the first electrically insulating layer comprising an electrically insulating material, and a substance suitable for creating free charge carriers of a first type in the first graphene layer, the semiconductor device further comprising an electrically insulating region contacting the second graphene layer and suitable for creating free charge carriers of a second type, opposite to the first type, in the second graphene layer.
摘要翻译：提供了一种半导体器件，其包括双层石墨烯，其包括第一和第二相邻的石墨烯层，以及与第一石墨烯层接触的第一电绝缘层，第一电绝缘层包括电绝缘材料和适于产生自由电荷的物质在第一石墨烯层中的第一类型的载流子，所述半导体器件还包括接触第二石墨烯层的电绝缘区域，并且适于在第二石墨烯层中产生与第一类型相反的第二类型的自由载流子。

2. 发明授权

US09293536B2 Bilayer graphene tunneling field effect transistor 有权
标题翻译：双层石墨烯隧道场效应晶体管
公开(公告)号：US09293536B2
公开(公告)日：2016-03-22
申请号：US14572364
申请日：2014-12-16
申请人： IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
发明人： Amirhasan Nourbakhsh , Bart Soree , Marc Heyns , Tarun Kumar Agarwal
IPC分类号： H01L29/66 , H01L29/16 , H01L29/423 , H01L29/786
CPC分类号： H01L29/1606 , H01L29/42384 , H01L29/78648 , H01L29/78684 , H01L29/78696
摘要： A bilayer graphene tunnelling field effect transistor is provided comprising a bilayer graphene layer, and at least a top gate electrode and a bottom gate electrode, wherein the at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: a source region, a channel region, and a drain region.
摘要翻译：提供了一种双层石墨烯隧道场效应晶体管，其包括双层石墨烯层，以及至少顶栅电极和底栅电极，其中至少顶栅电极和底电极相对于彼此适当地定位，使得在栅极电极：源区域，沟道区域和漏极区域的适当偏置时，在化学未掺杂的双层石墨烯层中电诱导以下区域。

3. 发明申请

US20130334500A1 TUNNEL FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR MAKING THE DEVICE 有权
标题翻译：隧道场效应晶体管装置及其制造方法
公开(公告)号：US20130334500A1
公开(公告)日：2013-12-19
申请号：US13904303
申请日：2013-05-29
申请人： Katholieke Universiteit, K.U. LEUVEN R&D , IMEC
发明人： Quentin Smets , Anne S. Verhulst , Rita Rooyackers , Marc Heyns
IPC分类号： H01L29/66
CPC分类号： H01L29/66977 , H01L29/66477 , H01L29/7391
摘要： A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer, a highly doped source layer, a channel layer, a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer, and a highly doped pocket layer extending in between and along the gate dielectric layer and the source layer, characterized in that the pocket layer extends to between and along the source layer and the channel layer.
摘要翻译：一种由至少以下层构成的隧道场效应晶体管器件（TFET）：高掺杂漏极层，高掺杂源极层，沟道层，栅极介电层和栅极电极层，栅极电介质层沿着源极延伸层，以及在栅极电介质层和源极层之间并沿着栅极电介质层和源极层延伸的高度掺杂的袋层，其特征在于，所述袋层延伸到源层和沟道层之间并且沿着源极层和沟道层延伸。

4. 发明授权

US09184270B2 Graphene based field effect transistor 有权
标题翻译：基于石墨烯的场效应晶体管
公开(公告)号：US09184270B2
公开(公告)日：2015-11-10
申请号：US14231315
申请日：2014-03-31
申请人： IMEC , Katholieke Universiteit Leuven, K.U.LEUVEN R&D
发明人： Amirhasan Nourbakhsh , Marc Heyns , Stefan De Gendt
IPC分类号： H01L21/24 , H01L29/775 , H01L21/02 , H01L29/16 , H01L29/51 , H01L29/778 , H01L29/66
CPC分类号： H01L29/775 , H01L21/02527 , H01L21/0262 , H01L29/1606 , H01L29/513 , H01L29/66015 , H01L29/778 , H01L2924/13088
摘要： A semiconductor device comprising a graphene layer, a graphene oxide layer overlaying the graphene layer, and a high-k dielectric layer overlaying the graphene oxide layer is provided, as well as a method for producing the same. The method results in a graphene chemical functionalization that efficiently and uniformly seeds ALD growth, preserves the underlying graphene structure, and achieves desirable dielectric properties such as low leakage current and high capacitance.
摘要翻译：提供了包括石墨烯层，覆盖石墨烯层的石墨烯氧化物层和覆盖石墨烯氧化物层的高k电介质层的半导体器件及其制造方法。该方法导致石墨烯化学官能化，其有效且均匀地种植ALD生长，保留下面的石墨烯结构，并获得所需的介电特性，如低漏电流和高电容。

5. 发明申请

US20140299841A1 GRAPHENE BASED FIELD EFFECT TRANSISTOR 有权
标题翻译：基于石墨的场效应晶体管
公开(公告)号：US20140299841A1
公开(公告)日：2014-10-09
申请号：US14231315
申请日：2014-03-31
申请人： Katholieke Universiteit Leuven, K.U.LEUVEN R&D , IMEC
发明人： Amirhasan Nourbakhsh , Marc Heyns , Stefan De Gendt
IPC分类号： H01L29/775 , H01L29/16 , H01L21/02
CPC分类号： H01L29/775 , H01L21/02527 , H01L21/0262 , H01L29/1606 , H01L29/513 , H01L29/66015 , H01L29/778 , H01L2924/13088
摘要： A semiconductor device comprising a graphene layer, a graphene oxide layer overlaying the graphene layer, and a high-k dielectric layer overlaying the graphene oxide layer is provided, as well as a method for producing the same. The method results in a graphene chemical functionalization that efficiently and uniformly seeds ALD growth, preserves the underlying graphene structure, and achieves desirable dielectric properties such as low leakage current and high capacitance.
摘要翻译：提供了包括石墨烯层，覆盖石墨烯层的石墨烯氧化物层和覆盖石墨烯氧化物层的高k电介质层的半导体器件及其制造方法。该方法导致石墨烯化学官能化，其有效且均匀地种植ALD生长，保留下面的石墨烯结构，并获得所需的介电特性，如低漏电流和高电容。

6. 发明申请

US20150171167A1 BILAYER GRAPHENE TUNNELING FIELD EFFECT TRANSISTOR 有权
标题翻译：双层石墨隧道场效应晶体管
公开(公告)号：US20150171167A1
公开(公告)日：2015-06-18
申请号：US14572364
申请日：2014-12-16
申请人： IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
发明人： Amirhasan Nourbakhsh , Bart Soree , Marc Heyns , Tarun Kumar Agarwal
IPC分类号： H01L29/16
CPC分类号： H01L29/1606 , H01L29/42384 , H01L29/78648 , H01L29/78684 , H01L29/78696
摘要： A bilayer graphene tunnelling field effect transistor is provided comprising a bilayer graphene layer, and at least a top gate electrode and a bottom gate electrode, wherein the at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: a source region, a channel region, and a drain region.
摘要翻译：提供了一种双层石墨烯隧道场效应晶体管，其包括双层石墨烯层，以及至少顶栅电极和底栅电极，其中至少顶栅电极和底电极相对于彼此适当地定位，使得在栅极电极：源区域，沟道区域和漏极区域的适当偏置时，在化学未掺杂的双层石墨烯层中电诱导以下区域。

7. 发明授权

US09281040B2 Spin transfer torque magnetic memory device 有权
标题翻译：自旋转矩磁记忆装置
公开(公告)号：US09281040B2
公开(公告)日：2016-03-08
申请号：US14096778
申请日：2013-12-04
申请人： IMEC
发明人： Bart Soree , Marc Heyns , Geoffrey Pourtois
IPC分类号： H01L29/82 , G11C11/16 , H01L43/08 , H01L43/12 , H01L43/02 , H01L21/336 , G11C11/00
CPC分类号： G11C11/161 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A spin transfer torque magnetic memory device is disclosed. In one aspect, the spin transfer torque magnetic memory device comprises a first layered structure stacked in a vertical direction and comprising alternating topological insulator layers and insulator layers. The memory device additionally includes a second layered structure stacked in the vertical direction and comprising alternating topological insulator layers and insulator layers. The memory device further includes a magnetic material interposing the first and second layered structures in a horizontal direction different from the vertical direction such that the magnetic material is in contact with a first side surface of the first layered structure and in contact with a first side surface of the second layered structure. Additionally, the magnetic material is configured to have a magnetization direction that can change in response to a current flowing through the magnetic material.
摘要翻译：公开了一种自旋转矩转矩磁存储器件。一方面，自旋转移转矩磁存储器件包括在垂直方向上堆叠的第一层状结构，并且包括交替的拓扑绝缘体层和绝缘体层。存储器件还包括在垂直方向上堆叠的第二层状结构，并且包括交替的拓扑绝缘体层和绝缘体层。存储装置还包括磁性材料，其在与垂直方向不同的水平方向上插入第一和第二层状结构，使得磁性材料与第一层状结构的第一侧表面接触并与第一侧表面接触的第二分层结构。此外，磁性材料被配置为具有响应于流过磁性材料的电流而改变的磁化方向。

8. 发明授权

US09070720B2 Tunnel field effect transistor device and method for making the device 有权
标题翻译：隧道场效应晶体管器件及其制造方法
公开(公告)号：US09070720B2
公开(公告)日：2015-06-30
申请号：US13904303
申请日：2013-05-29
申请人： IMEC , Katholieke Universiteit, K.U. Leuven R&D
发明人： Quentin Smets , Anne S. Verhulst , Rita Rooyackers , Marc Heyns
IPC分类号： H01L29/06 , H01L29/08 , H01L29/66 , H01L29/739
CPC分类号： H01L29/66977 , H01L29/66477 , H01L29/7391
摘要： A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer, a highly doped source layer, a channel layer, a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer, and a highly doped pocket layer extending in between and along the gate dielectric layer and the source layer, characterized in that the pocket layer extends to between and along the source layer and the channel layer.
摘要翻译：一种由至少以下层构成的隧道场效应晶体管器件（TFET）：高掺杂漏极层，高掺杂源极层，沟道层，栅极介电层和栅极电极层，栅极电介质层沿着源极延伸层，以及在栅极电介质层和源极层之间并沿着栅极电介质层和源极层延伸的高度掺杂的袋层，其特征在于，所述袋层延伸到源层和沟道层之间并且沿着源极层和沟道层延伸。

9. 发明申请

US20140160835A1 SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE 有权
标题翻译：转子转子磁力记忆装置
公开(公告)号：US20140160835A1
公开(公告)日：2014-06-12
申请号：US14096778
申请日：2013-12-04
申请人： IMEC
发明人： Bart Soree , Marc Heyns , Geoffrey Pourtois
IPC分类号： G11C11/16 , H01L43/12 , H01L43/02
CPC分类号： G11C11/161 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A spin transfer torque magnetic memory device is disclosed. In one aspect, the spin transfer torque magnetic memory device comprises a first layered structure stacked in a vertical direction and comprising alternating topological insulator layers and insulator layers. The memory device additionally includes a second layered structure stacked in the vertical direction and comprising alternating topological insulator layers and insulator layers. The memory device further includes a magnetic material interposing the first and second layered structures in a horizontal direction different from the vertical direction such that the magnetic material is in contact with a first side surface of the first layered structure and in contact with a first side surface of the second layered structure. Additionally, the magnetic material is configured to have a magnetization direction that can change in response to a current flowing through the magnetic material.
摘要翻译：公开了一种自旋转矩转矩磁存储器件。一方面，自旋转移转矩磁存储器件包括在垂直方向上堆叠的第一层状结构，并且包括交替的拓扑绝缘体层和绝缘体层。存储器件还包括在垂直方向上堆叠的第二层状结构，并且包括交替的拓扑绝缘体层和绝缘体层。存储装置还包括磁性材料，其在与垂直方向不同的水平方向上插入第一和第二层状结构，使得磁性材料与第一层状结构的第一侧表面接触并与第一侧表面接触的第二分层结构。此外，磁性材料被配置为具有响应于流过磁性材料的电流而改变的磁化方向。

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