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21. 发明授权

US08633720B2 Method and apparatus for measuring magnetic parameters of magnetic thin film structures 有权
标题翻译：用于测量磁性薄膜结构磁参数的方法和装置
公开(公告)号：US08633720B2
公开(公告)日：2014-01-21
申请号：US13134925
申请日：2011-06-21
申请人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
发明人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： G01R27/08
CPC分类号： G01R33/093
摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.
摘要翻译：高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。薄膜样品可以无图案化。探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个磁膜堆中的层改变方向。可以从不同电流频率的电压确定测得的谐振曲线。通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。

22. 发明申请

US20130267042A1 MRAM Fabrication Method with Sidewall Cleaning 有权
标题翻译： MRAM制造方法与侧壁清洁
公开(公告)号：US20130267042A1
公开(公告)日：2013-10-10
申请号：US13443818
申请日：2012-04-10
申请人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： H01L21/02
CPC分类号： H01L27/222 , H01L43/12
摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.
摘要翻译：描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。本发明的各种实施方案包括增强或优化方法的方法。如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

23. 发明授权

US08519496B2 Spin-transfer torque magnetic random access memory with multi-layered storage layer 有权
标题翻译：具有多层存储层的自旋转矩磁性随机存取存储器
公开(公告)号：US08519496B2
公开(公告)日：2013-08-27
申请号：US13035857
申请日：2011-02-25
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
摘要翻译：自旋转移磁力随机存取存储器（STTMRAM）元件被配置为存储当电流被施加到其上时的状态。 STTMRAM元件包括第一和第二自由层，每个自由层具有定义STTMRAM元件的状态的相关联的磁化方向。在向STTMRAM元件施加电流之前，第一和第二自由层的磁化方向各自在平面内，并且在向STTMRAM元件施加电流之后，第二自由层的磁化方向变得基本上标题为平面外和第一自由层开关的磁化方向。在断电的情况下，第二自由层的磁化方向保持在与第一自由层基本相反的方向。

24. 发明申请

US20120280339A1 PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER 有权
标题翻译：具有平面磁静力切换增强层的全磁性隧道结（pMTJ）
公开(公告)号：US20120280339A1
公开(公告)日：2012-11-08
申请号：US13161412
申请日：2011-06-15
申请人： Jing Zhang , Yuchen Zhou , Rajiv Yadav Ranjan , Yiming Huai
发明人： Jing Zhang , Yuchen Zhou , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： H01L29/82
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.
摘要翻译： STTMRAM元件包括具有垂直磁方位的磁性隧道结（MTJ）。 MTJ包括阻挡层，形成在阻挡层顶部上并具有相对于固定层的磁性取向垂直和可切换的磁性取向的自由层。当电流流过STTMRAM元件时，自由层的磁方向切换。通过间隔层从自由层分离的开关增强层（SEL）形成在自由层的顶部上并且具有面内磁性取向，并且在自由层上产生磁静电场，导致磁矩自由层的外边缘与面内部件倾斜，同时最小程度地扰乱自由层中心的磁矩，以便自由层的切换和降低阈值电压/电流。

25. 发明授权

US08536063B2 MRAM etching processes 有权
公开(公告)号：US08536063B2
公开(公告)日：2013-09-17
申请号：US13199490
申请日：2011-08-30
申请人： Kimihiro Satoh , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Parviz Keshtbod , Roger K. Malmhall
发明人： Kimihiro Satoh , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Parviz Keshtbod , Roger K. Malmhall
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , H01L29/00
摘要： Various embodiments of the invention relate to etching processes used in fabrication of MTJ cells in an MRAM device. The various embodiments can be used in combination with each other. The first embodiment adds a hard mask buffer layer between a hard mask and a top electrode. The second embodiment uses a multilayered etching hard mask. The third embodiment uses a multilayered top electrode structure including a first Cu layer under a second layer such as Ta. The fourth embodiment is a two-phase etching process used for the bottom electrode to remove re-deposited material while maintaining a more vertical sidewall etching profile. In the first phase the bottom electrode layer is removed using carbonaceous reactive ion etching until the endpoint. In the second phase an inert gas and/or oxygen plasma is used to remove the polymer that was deposited during the previous etching processes.

26. 发明申请

US20130052752A1 Mram etching processes 有权
标题翻译：摩擦蚀刻工艺
公开(公告)号：US20130052752A1
公开(公告)日：2013-02-28
申请号：US13199490
申请日：2011-08-30
申请人： Kimihiro Satoh , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Parviz Keshtbod , Roger K. Malmhall
发明人： Kimihiro Satoh , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Parviz Keshtbod , Roger K. Malmhall
IPC分类号： H01L21/8246
CPC分类号： H01L43/12 , H01L29/00
摘要： Various embodiments of the invention relate to etching processes used in fabrication of MTJ cells in an MRAM device. The various embodiments can be used in combination with each other. The first embodiment adds a hard mask buffer layer between a hard mask and a top electrode. The second embodiment uses a multilayered etching hard mask. The third embodiment uses a multilayered top electrode structure including a first Cu layer under a second layer such as Ta. The fourth embodiment is a two-phase etching process used for the bottom electrode to remove re-deposited material while maintaining a more vertical sidewall etching profile. In the first phase the bottom electrode layer is removed using carbonaceous reactive ion etching until the endpoint. In the second phase an inert gas and/or oxygen plasma is used to remove the polymer that was deposited during the previous etching processes.
摘要翻译：本发明的各种实施例涉及用于制造MRAM装置中的MTJ电池的蚀刻工艺。各种实施例可以彼此组合使用。第一实施例在硬掩模和顶电极之间添加硬掩模缓冲层。第二实施例使用多层蚀刻硬掩模。第三实施例使用包括第二层如Ta之下的第一Cu层的多层顶电极结构。第四实施例是用于底部电极去除再沉积材料同时保持更垂直侧壁蚀刻轮廓的两相蚀刻工艺。在第一阶段中，使用碳质反应离子蚀刻去除底部电极层直到端点。在第二阶段中，使用惰性气体和/或氧等离子体去除在先前蚀刻工艺期间沉积的聚合物。

27. 发明申请

US20130244344A1 METHOD FOR MANUFACTURING HIGH DENSITY NON-VOLATILE MAGNETIC MEMORY 有权
标题翻译：制造高密度非挥发性磁记忆的方法
公开(公告)号：US20130244344A1
公开(公告)日：2013-09-19
申请号：US13610587
申请日：2012-09-11
申请人： Roger Klas Malmhall , Kimihiro Satoh , Jing Zhang , Parviz Keshtbod , Rajiv Yadav Ranjan
发明人： Roger Klas Malmhall , Kimihiro Satoh , Jing Zhang , Parviz Keshtbod , Rajiv Yadav Ranjan
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01L27/228
摘要： Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described. Embodiments are described that use a self-aligned double patterning method for one or both orthogonal line patterning steps to achieve dense arrays of MTJs with feature dimensions one half of the minimum photo lithography feature size (F). In one set of embodiments, the materials and thicknesses of the stack of layers that provide the masking function are selected so that after the initial set of mask pads have been patterned, a sequence of etching steps progressively transfers the mask pad shape through the multiple mask layer and down through all of the MTJ cell layers to the form the complete MTJ pillars. In another set of embodiments, the MTJ/BE stack is patterned into parallel lines before the top electrode layer is deposited.
摘要翻译：描述了使用两个正交线图案化步骤制造MTJ阵列的方法。描述了使用用于一个或两个正交线图案化步骤的自对准双图案化方法来实现特征尺寸为最小光刻特征尺寸（F）的一半的MTJ的致密阵列的实施例。在一组实施例中，选择提供掩模功能的层叠层的材料和厚度，使得在初始掩模焊盘组被图案化之后，一系列蚀刻步骤逐渐地将掩模焊盘形状传递通过多个掩模通过所有的MTJ单元层的层和下层形成完整的MTJ柱。在另一组实施例中，在沉积顶部电极层之前，将MTJ / BE叠层图案化成平行线。

28. 发明授权

US08488376B2 Non-volatile magnetic memory element with graded layer 有权
标题翻译：带分级层的非易失性磁记忆元件
公开(公告)号：US08488376B2
公开(公告)日：2013-07-16
申请号：US13476879
申请日：2012-05-21
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
IPC分类号： G11C11/14
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
摘要翻译：非易失性磁存储元件包括多个层，其中之一是分级的自由层。分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度是基于磁性化合物的反应性。

29. 发明申请

US20130088915A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER 有权
公开(公告)号：US20130088915A1
公开(公告)日：2013-04-11
申请号：US13475814
申请日：2012-05-18
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

30. 发明申请

US20130087870A1 NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER 有权
标题翻译：具有分级层的非易失性磁记忆元件
公开(公告)号：US20130087870A1
公开(公告)日：2013-04-11
申请号：US13476904
申请日：2012-05-21
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.
摘要翻译：非易失性磁存储元件包括多个层，其中之一是分级的自由层。分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度是基于磁性化合物的反应性。

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