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    • 22. 发明申请
    • MAGNETIC RECORDING HEAD COATING AND METHOD
    • 磁记录头涂层及方法
    • US20100038340A1
    • 2010-02-18
    • US12193107
    • 2008-08-18
    • Robert G. BiskebornCalvin S. LoGary M. DecadCherngye Hwang
    • Robert G. BiskebornCalvin S. LoGary M. DecadCherngye Hwang
    • B44C1/22
    • G11B5/3106G11B5/3169
    • A method for encapsulating a magnetic recording head including coating at least a portion of a magnetic recording head containing a recording gap with a first layer of at least one coating material, including silicon nitride, the first layer of at least one coating material having a first removal rate, coating at least a portion of the magnetic recording head containing a recording gap and coated with the first layer of at least one coating material with a second layer of at least one coating material, including aluminum oxide, the second layer of at least one coating material having a second removal rate higher than the first removal rate, and removing at least a portion of the second layer of at least one coating material via a removal process, including chemical-mechanical polishing, lapping, or vacuum processing to at least partially planarize the surface of the recording gap.
    • 一种用于封装磁记录头的方法,包括将包含记录间隙的磁记录头的至少一部分涂覆至少一层包括氮化硅的涂层材料的第一层,至少一层涂料的第一层具有第一层 涂覆至少一部分包含记录间隙的磁记录头并涂覆有第一层至少一种涂层材料的第二层至少一层包括氧化铝的涂层材料,至少第二层 一个涂层材料具有高于第一去除速率的第二去除速率,以及通过去除工艺去除至少一部分至少一种涂层材料的第二层,包括化学机械抛光,研磨或真空处理至少 部分平面化记录间隙的表面。
    • 24. 发明授权
    • Method for depositing a thin film adhesion layer
    • 沉积薄膜粘附层的方法
    • US07300556B2
    • 2007-11-27
    • US10651632
    • 2003-08-29
    • Cherngye HwangEun RowNing ShiEric (Yongjian) Sun
    • Cherngye HwangEun RowNing ShiEric (Yongjian) Sun
    • C23C14/34
    • C23C28/046C23C14/024C23C14/0605C23C14/165C23C28/04
    • A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes. In a preferred embodiment the use of xenon as the operating gas for deposition of the silicon adhesion layer is combined with the use of a filtered cathodic arc (FCA) process to deposit the protective overcoat, preferably carbon based, on a magnetic recording head.
    • 公开了一种物理气相沉积(PVD)的方法,其中在沉积粘合层(优选硅)时,将氙用作真空室中的操作气体,其允许粘附层超薄,同时具有改善的耐久性 艺术电影。 如现有技术中典型的使用氩气导致氩原子被掺入到超薄硅膜中,具有有害的结果。 在只有几埃厚的薄膜中,用氩气或其它元素污染薄膜可能产生具有降低的粘附性能的膜,并且在某些情况下,诸如氩气的贵重原子可以逸出留下空隙或针孔的膜。 在真空室中使用更大和更重的氙原子产生基本上更纯的膜,具有降低的空隙和针孔的风险。 在优选的实施方案中,将氙作为沉积硅粘合层的工作气体的使用与使用过滤的阴极电弧(FCA)方法结合,以将保护性外涂层,优选基于碳的沉积物沉积在磁性记录头上。
    • 26. 发明申请
    • Method for depositing a thin film adhesion layer
    • 沉积薄膜粘附层的方法
    • US20050045468A1
    • 2005-03-03
    • US10651632
    • 2003-08-29
    • Cherngye HwangEun RowNing ShiEric Sun
    • Cherngye HwangEun RowNing ShiEric Sun
    • C23C14/02C23C14/06C23C14/16C23C14/28C23C14/32C23C16/27C23C28/04G11B5/127
    • C23C28/046C23C14/024C23C14/0605C23C14/165C23C28/04
    • A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes. In a preferred embodiment the use of xenon as the operating gas for deposition of the silicon adhesion layer is combined with the use of a filtered cathodic arc (FCA) process to deposit the protective overcoat, preferably carbon based, on a magnetic recording head.
    • 公开了一种物理气相沉积(PVD)的方法,其中在沉积粘合层(优选硅)时,将氙用作真空室中的操作气体,其允许粘附层超薄,同时具有改善的耐久性 艺术电影。 如现有技术中典型的使用氩气导致氩原子被掺入到超薄硅膜中,具有有害的结果。 在只有几埃厚的薄膜中,用氩气或其它元素污染薄膜可能产生具有降低的粘附性能的膜,并且在某些情况下,诸如氩气的贵重原子可以逸出留下空隙或针孔的膜。 在真空室中使用更大和更重的氙原子产生基本上更纯的膜,具有降低的空隙和针孔的风险。 在优选的实施方案中,将氙作为沉积硅粘合层的工作气体的使用与使用过滤的阴极电弧(FCA)方法结合,以将保护性外涂层(优选碳基)沉积在磁性记录头上。
    • 28. 发明授权
    • Method of manufacturing a magnetic head including a read head with read track width defining layer that planarizes the write gap layer of a write head
    • 一种制造磁头的方法,该磁头包括具有读磁道宽度限定层的读头,平面化写头的写间隙层
    • US06434814B1
    • 2002-08-20
    • US09212724
    • 1998-12-16
    • Henry C. ChangCherngye HwangRobert Otto Schwenker
    • Henry C. ChangCherngye HwangRobert Otto Schwenker
    • G11B5127
    • B82Y25/00B82Y10/00G11B5/012G11B5/3116G11B5/3163G11B5/3903G11B5/3932G11B5/3967G11B2005/3996Y10T29/49025Y10T29/49032Y10T29/49041Y10T29/49044Y10T29/4905Y10T29/49052
    • A method of making a magnetic head that has a read head with a track width includes the steps of depositing a read track width defining material layer on a read sensor material layer; forming a bi-layer photoresist mask on the read track width defining material layer that masks a read track width defining layer portion of the read track width defining material layer; removing by reactive ion etching (RIE) a portion of the read track width defining material layer not masked by the photoresist mask to form the read track width defining layer portion with exposed first and second side edges that are spaced apart a distance equal to the track width; removing by ion milling a first portion of the read sensor material layer not masked by the read track width defining layer portion to form a second portion of the read sensor material layer with exposed first and second side edges that have a width equal to the track width; depositing hard bias and lead material layers on the photoresist mask in contact with the first and second side edges of each of the second portion of the read sensor material layer and the read track width defining layer portion; and removing the photoresist mask, thereby lifting off a portion of the hard bias and lead material layers leaving first and second hard bias and lead layers connected to the first and second side edges of each of the second portion of the read sensor material layer and the read track width defining layer portion.
    • 制造具有带磁道宽度的读头的磁头的方法包括以下步骤:在读取的传感器材料层上沉积限定材料层的读取磁道宽度; 在所述读取磁道宽度限定材料层上形成双层光致抗蚀剂掩模,其掩蔽所述读取磁道宽度限定材料层的读取磁道宽度限定层部分; 通过反应离子蚀刻(RIE)去除未被光致抗蚀剂掩模掩蔽的读磁道宽度限定材料层的一部分,以形成具有暴露的第一和第二侧边缘,该第一和第二侧边缘间隔开等于轨道的距离 宽度; 通过离子研磨读取的传感器材料层的第一部分而不被读取磁道宽度限定层部分掩蔽,以形成具有等于轨道宽度的宽度的暴露的第一和第二侧边缘的读取传感器材料层的第二部分 ; 在所述光致抗蚀剂掩模上沉积与所述读取传感器材料层的第二部分和所述读取磁道宽度限定层部分中的每一个的第一和第二侧边缘接触的硬偏压和引线材料层; 并且去除光致抗蚀剂掩模,从而剥离硬偏压和引线材料层的一部分,留下第一和第二硬偏压和引线层,其连接到读取传感器材料层的第二部分的第一和第二侧边缘,并且 读取磁道宽度定义层部分。