专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06969625B2 CMP assisted liftoff micropatterning 失效
标题翻译： CMP辅助提升微图案
公开(公告)号：US06969625B2
公开(公告)日：2005-11-29
申请号：US10949433
申请日：2004-09-24
申请人： Marie-Claire Cyrille , Frederick H. Dill , Cherngye Hwang , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick H. Dill , Cherngye Hwang , Jui-Lung Li
IPC分类号： G11B5/39 , G11B5/31 , H01L21/304 , H01L43/08 , H01L21/00 , H01L21/44
CPC分类号： G11B5/313
摘要： A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.
摘要翻译：微电子器件的方法和结构包括：衬底上的第一膜，第一膜上的第一耐抛光层，第一耐抛光层上的第二膜，第二膜上的第二耐光层，其中第一和第二膜第二耐光层包括类金刚石碳。第一膜包括电阻材料，而第二膜包括低电阻导电材料。第一个胶片是一个实现为磁读取传感器的电阻器。电阻材料对磁场敏感。该装置还包括在第一和第二膜之间的大致垂直的接合点和邻接于电阻材料的电介质膜。

2. 发明授权

US06858909B2 CMP assisted liftoff micropatterning 失效
公开(公告)号：US06858909B2
公开(公告)日：2005-02-22
申请号：US10307093
申请日：2002-11-29
申请人： Marie-Claire Cyrille , Frederick H. Dill , Cherngye Hwang , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick H. Dill , Cherngye Hwang , Jui-Lung Li
IPC分类号： G11B5/39 , G11B5/31 , H01L21/304 , H01L43/08 , H01L27/14
CPC分类号： G11B5/313
摘要： A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.

3. 发明申请

US20050041341A1 CMP assisted liftoff micropatterning 失效
公开(公告)号：US20050041341A1
公开(公告)日：2005-02-24
申请号：US10949433
申请日：2004-09-24
申请人： Marie-Claire Cyrille , Frederick Dill , Cherngye Hwang , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick Dill , Cherngye Hwang , Jui-Lung Li
IPC分类号： G11B5/39 , G11B5/31 , H01L21/304 , H01L43/08 , G11B5/33 , G11B5/127 , H01L21/302 , H01L21/461
CPC分类号： G11B5/313
摘要： A method and structure for a microelectronic device comprises a first film over a substrate, a first polish resistant layer over the first film, a second film over the first polish resistant layer, a second polish resistant layer over the second film, wherein the first and second polish resistant layers comprise diamond-like carbon. The first film comprises an electrically resistive material, while the second film comprises low resistance conductive material. The first film is an electrical resistor embodied as a magnetic read sensor. The electrically resistive material is sensitive to magnetic fields. The device further comprises a generally vertical junction between the first and second films and a dielectric film abutted to the electrically resistive material.

4. 发明申请

US20060256482A1 Method to fabricate side shields for a magnetic sensor 失效
公开(公告)号：US20060256482A1
公开(公告)日：2006-11-16
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
发明人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

5. 发明授权

US07765676B2 Method for patterning a magnetoresistive sensor 有权
标题翻译：图案化磁阻传感器的方法
公开(公告)号：US07765676B2
公开(公告)日：2010-08-03
申请号：US10993499
申请日：2004-11-18
申请人： Marie-Claire Cyrille , Elizabeth Ann Dobisz , Wipul Pemsiri Jayasekara , Jui-Lung Li
发明人： Marie-Claire Cyrille , Elizabeth Ann Dobisz , Wipul Pemsiri Jayasekara , Jui-Lung Li
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： G11B5/3903 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.
摘要翻译：一种用于构造使用耐蚀刻材料去除工艺的蚀刻掩模的磁阻传感器的方法，所述方法用于限定传感器宽度和条纹高度。该方法可以包括使用形成在光致抗蚀剂掩模下的Ta蚀刻掩模，以及使用离子铣削工艺来限定传感器。在执行离子研磨之后，蚀刻掩模基本上保持完整，因此通过稍后的CMP工艺容易地除去。蚀刻掩模层也非常耐高温，例如用于期望的氧化铝原子层沉积中使用的那些，其用于在传感器周围沉积保形层的氧化铝。

6. 发明授权

US07323112B2 Method of fabricating electronic component using resist structure with no undercut 有权
标题翻译：使用没有底切的抗蚀剂结构制造电子元件的方法
公开(公告)号：US07323112B2
公开(公告)日：2008-01-29
申请号：US10652053
申请日：2003-08-29
申请人： Amanda Baer , Marie-Claire Cyrille , Frederick Hayes Dill , Wipul Pemsiri Jayaekara , Jui-Lung Li , Hugo Alberto Emilio Santini , Benjamin Lu Chen Wang
发明人： Amanda Baer , Marie-Claire Cyrille , Frederick Hayes Dill , Wipul Pemsiri Jayaekara , Jui-Lung Li , Hugo Alberto Emilio Santini , Benjamin Lu Chen Wang
IPC分类号： B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01J2237/3114
摘要： A method for milling a structure. A single- or multi-layer resist having no undercut is added to a surface of a structure to be milled, the surface to be milled defining a plane. A milling process, such as ion milling, is performed. The milling process includes milling the structure at high incidence and milling the structure at razing incidence. The milling process can be performed only once, or repeated multiple times. High incidence can be defined as about 65 to about 90 degrees from the plane of the surface being milled. Razing incidence can be defined as about 0 to about 30 degrees from the plane of the surface being milled.
摘要翻译：一种铣削结构的方法。将未切割的单层或多层抗蚀剂加入要研磨的结构的表面，待研磨的表面限定一个平面。进行铣削加工，例如离子铣削。铣削过程包括以高发射率铣削结构并铣削结构。铣削加工只能执行一次，或重复多次。可以将高入射率定义为从被研磨表面的平面约65度至约90度。闪电发生率可以定义为距被研磨表面的平面约0至约30度。

7. 发明申请

US20060023377A1 Method for fabricating a CPP magnetic transducer using CMP-assisted lift-off and a CMP-resistant metal layer 失效
标题翻译：使用CMP辅助剥离和耐CMP的金属层制造CPP磁换能器的方法
公开(公告)号：US20060023377A1
公开(公告)日：2006-02-02
申请号：US10909121
申请日：2004-07-30
申请人： Marie-Claire Cyrille , Frederick Dill , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick Dill , Jui-Lung Li
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is described which uses a CMP resistant metal layer to replace the upper dielectric layer in the track width definition phase of a TMR or CPP spin valve magnetic head. The metal which is selected to be resistant to the CMP process can be rhodium (Rh), platinum (Pt), chromium (Cr), vanadium (V), etc. The additional CMP resistance of the refill layer structure provides a much larger processing window which results in higher yields. A CPP head according to the invention has a metal layer according to the invention above the hard bias structures on the sides of the sensor which define the track width.
摘要翻译：描述了一种使用CMP抗蚀金属层代替TMR或CPP自旋阀磁头的磁道宽度清晰度相位中的上介质层的方法。选择耐CMP工艺的金属可以是铑（Rh），铂（Pt），铬（Cr），钒（V）等。补充层结构的附加CMP电阻提供了更大的加工这导致更高的产量。根据本发明的CPP头在传感器侧面上的硬偏压结构上方具有根据本发明的金属层，其限定轨道宽度。

8. 发明授权

US07094130B2 Method for fabricating a magnetic transducer using a slurry with spherical particles for CMP-assisted photoresist lift-off 失效
标题翻译：使用具有用于CMP辅助光致抗蚀剂剥离的球形颗粒的浆料制造磁换能器的方法
公开(公告)号：US07094130B2
公开(公告)日：2006-08-22
申请号：US11222611
申请日：2005-09-09
申请人： Marie-Claire Cyrille , Frederick Hayes Dill , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick Hayes Dill , Jui-Lung Li
IPC分类号： B24B1/00
CPC分类号： B82Y25/00 , B82Y40/00 , H01F41/308 , Y10T29/49032
摘要： A method is described which uses a CMP slurry with an abrasive of spherical particles to lift-off photoresist used in the patterning of the sensor for a magnetic transducer. The spherical particles, preferably less than 0.015 microns, are preferably silica, alumina, titania or zirconia with colloidal silica being preferred. An alternative method of fabricating a CPP sensor structure according to the invention deposits a dielectric or CMP resistant metal over the hard bias structure. The CMP-resistant metal is preferably selected from the group consisting of rhodium, chromium, vanadium and platinum. A CMP resistant mask deposited over the dielectric or CMP-resistant metal can include an optional adhesion layer such as tantalum followed by a DLC layer. The CMP-assisted lift-off of the photoresist and the excess materials is executed at this point. The photoresist used to protect the selected area of the sensor structure is lifted-off using the slurry.
摘要翻译：描述了一种方法，其使用具有球形颗粒磨料的CMP浆料来剥离用于磁传感器的传感器的图案化中使用的光致抗蚀剂。优选小于0.015微米的球形颗粒优选是二氧化硅，氧化铝，二氧化钛或具有胶体二氧化硅的氧化锆。根据本发明制备CPP传感器结构的替代方法是在硬偏压结构上沉积电介质或耐CMP的金属。耐CMP的金属优选选自铑，铬，钒和铂。沉积在电介质或耐CMP金属上的CMP抗蚀掩模可以包括任选的粘合层，例如钽，然后是DLC层。此时执行CMP辅助的光致抗蚀剂和多余材料的剥离。用于保护传感器结构的选定区域的光致抗蚀剂使用浆料被剥离。

9. 发明申请

US20060025057A1 Method for fabricating a magnetic transducer using a slurry with spherical particles for CMP-assisted photoresist lift-off 失效
公开(公告)号：US20060025057A1
公开(公告)日：2006-02-02
申请号：US11222611
申请日：2005-09-09
申请人： Marie-Claire Cyrille , Frederick Dill , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick Dill , Jui-Lung Li
IPC分类号： B24B1/00
CPC分类号： B82Y25/00 , B82Y40/00 , H01F41/308 , Y10T29/49032
摘要： A method is described which uses a CMP slurry with an abrasive of spherical particles to lift-off photoresist used in the patterning of the sensor for a magnetic transducer. The spherical particles, preferably less than 0.015 microns, are preferably silica, alumina, titania or zirconia with colloidal silica being preferred. An alternative method of fabricating a CPP sensor structure according to the invention deposits a dielectric or CMP resistant metal over the hard bias structure. The CMP-resistant metal is preferably selected from the group consisting of rhodium, chromium, vanadium and platinum. A CMP resistant mask deposited over the dielectric or CMP-resistant metal can include an optional adhesion layer such as tantalum followed by a DLC layer. The CMP-assisted lift-off of the photoresist and the excess materials is executed at this point. The photoresist used to protect the selected area of the sensor structure is lifted-off using the slurry.

10. 发明申请

US20060025053A1 Method for fabricating a magnetic transducer using a slurry with spherical particles for CMP-assisted photoresist lift-off 审中-公开
标题翻译：使用具有用于CMP辅助光致抗蚀剂剥离的球形颗粒的浆料制造磁换能器的方法
公开(公告)号：US20060025053A1
公开(公告)日：2006-02-02
申请号：US10909127
申请日：2004-07-30
申请人： Marie-Claire Cyrille , Frederick Dill , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick Dill , Jui-Lung Li
IPC分类号： B24B1/00
CPC分类号： B82Y25/00 , B82Y40/00 , H01F41/308 , Y10T29/49032
摘要： A method is described which uses a CMP slurry with an abrasive of spherical particles to lift-off photoresist used in the patterning of the sensor for a magnetic transducer. The spherical particles are preferably silica, alumina, titania or zirconia with colloidal silica being preferred. The size of the particle is preferably less than 0.015 microns. The pH is preferably alkaline and even more preferably with a pH of about 10-11. In a method according to the invention a CPP sensor structure width or height is defined according to the prior art by removing excess sensor material at opposite sides of the sensor structure to form voids to define the track width or stripe height. The photoresist used to protect the selected area of the sensor structure is lifted-off using the slurry.
摘要翻译：描述了一种方法，其使用具有球形颗粒磨料的CMP浆料来剥离用于磁传感器的传感器的图案化中使用的光致抗蚀剂。球形颗粒优选为二氧化硅，氧化铝，二氧化钛或具有胶体二氧化硅的氧化锆。颗粒的尺寸优选小于0.015微米。 pH优选为碱性，甚至更优选pH为约10-11。在根据本发明的方法中，根据现有技术通过在传感器结构的相对侧移除多余的传感器材料来形成CPP传感器结构的宽度或高度，以形成空隙以限定轨迹宽度或条纹高度。用于保护传感器结构的选定区域的光致抗蚀剂使用浆料被剥离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式