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21. 发明申请

US20090298300A1 Apparatus and Methods for Hyperbaric Rapid Thermal Processing 审中-公开
标题翻译：高压快速热处理装置与方法
公开(公告)号：US20090298300A1
公开(公告)日：2009-12-03
申请号：US12437257
申请日：2009-05-07
申请人： Joseph M. Ranish , Khurshed Sorabji , Alexander N. Lerner , Aaron M. Hunter
发明人： Joseph M. Ranish , Khurshed Sorabji , Alexander N. Lerner , Aaron M. Hunter
IPC分类号： H01L21/324 , H01L21/67
CPC分类号： H01L21/324 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for hyperbaric rapid thermal processing of a substrate are described. Methods of processing a substrate in a rapid thermal processing chamber are described that include passing a substrate from outside the chamber through an access port onto a support in the interior region of the processing chamber, closing a port door sealing the chamber, pressurizing the chamber to a pressure greater than 1.5 atmospheres absolute and directing radiant energy toward the substrate. Hyperbaric rapid thermal processing chambers are described which are constructed to withstand pressures greater than at least about 1.5 atmospheres absolute or, optionally, 2 atmospheres of absolute pressure. Processing chambers may include pressure control valves to control the pressure within the chamber.
摘要翻译：描述了用于衬底高压快速热处理的方法和装置。描述了在快速热处理室中处理基板的方法，其包括将基板从室外通过进入端口传送到处理室的内部区域中的支撑件上，关闭密封该室的端口门，将该室加压至绝对压力大于1.5个大气压，并将辐射能量引向基板。描述了高压快速热处理室，其被构造为承受大于至少约1.5大气压绝对压力或任选地大气压绝压的压力。处理室可以包括压力控制阀，以控制室内的压力。

22. 发明申请

US20090209112A1 MILLISECOND ANNEALING (DSA) EDGE PROTECTION 有权
标题翻译： MILLISECOND ANNEALING（DSA）边缘保护
公开(公告)号：US20090209112A1
公开(公告)日：2009-08-20
申请号：US12032475
申请日：2008-02-15
申请人： Blake Koelmel , Robert C. McIntosh , David DL Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
发明人： Blake Koelmel , Robert C. McIntosh , David DL Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
IPC分类号： H01L21/268 , B23Q3/00
CPC分类号： H01L21/67115 , H01L21/268 , H01L21/68735 , H01L21/68742
摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.
摘要翻译：提供了一种用于热处理衬底的方法和装置。衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

23. 发明申请

US20080169282A1 TEMPERATURE MEASUREMENT AND CONTROL OF WAFER SUPPORT IN THERMAL PROCESSING CHAMBER 有权
标题翻译：温度测量和控制热处理室中的支撑
公开(公告)号：US20080169282A1
公开(公告)日：2008-07-17
申请号：US12055045
申请日：2008-03-25
申请人： KHURSHED SORABJI , Alexander N. Lerner , Joseph M. Ranish , Aaron M. Hunter , Bruce Adams , Mehran Behdjat , Rajesh S. Ramanujam
发明人： KHURSHED SORABJI , Alexander N. Lerner , Joseph M. Ranish , Aaron M. Hunter , Bruce Adams , Mehran Behdjat , Rajesh S. Ramanujam
IPC分类号： H01L23/34 , H05B3/20 , F26B3/28
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.
摘要翻译：公开了用于在快速热处理期间实现基板均匀加热或冷却的装置和方法。更具体地，公开了用于在快速热处理期间控制支撑衬底和/或反射板的边缘环的温度以改善衬底上的温度均匀性的装置和方法，其包括邻近边缘环到加热或冷却边缘环。

24. 发明授权

US07378618B1 Rapid conductive cooling using a secondary process plane 有权
标题翻译：使用二次加工平面进行快速导电冷却
公开(公告)号：US07378618B1
公开(公告)日：2008-05-27
申请号：US11611061
申请日：2006-12-14
申请人： Khurshed Sorabji , Alexander N. Lerner
发明人： Khurshed Sorabji , Alexander N. Lerner
IPC分类号： F27D11/00 , F24B19/00
CPC分类号： H01L21/67098 , C30B31/14 , H01L21/30 , H01L21/67109 , H01L21/67115 , H01L22/10 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.
摘要翻译：描述了用于热处理衬底的方法和装置。该装置包括被配置为通过磁驱动线性地和/或旋转移动的基板支撑件。衬底支撑件还被配置为接收辐射热源以在腔室的一部分中提供加热区域。包括冷却板的主动冷却区域设置在加热区域的对面。衬底可以在两个区域之间移动，以便于快速控制衬底的加热和冷却。

25. 发明授权

US09478455B1 Thermal pyrolytic graphite shadow ring assembly for heat dissipation in plasma chamber 有权
标题翻译：热解石墨阴影环组件，用于等离子体室中的散热
公开(公告)号：US09478455B1
公开(公告)日：2016-10-25
申请号：US14738470
申请日：2015-06-12
申请人： Alan Hiroshi Ouye , Alexander N. Lerner
发明人： Alan Hiroshi Ouye , Alexander N. Lerner
IPC分类号： H01L21/683 , H01L21/3065 , H01J37/32 , H01L21/78 , H01L21/67
CPC分类号： H01L21/6836 , H01J37/321 , H01J37/32642 , H01L21/3065 , H01L21/67098 , H01L21/67103 , H01L21/67748 , H01L21/78 , H01L2221/68327 , H01L2221/68377
摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a shadow ring assembly for a plasma processing chamber includes an annular body including a thermally conductive material. The annular body includes a top surface to face an interior of the plasma chamber, and a bottom surface to face a substrate carrier in the plasma chamber. A plurality of posts are attached to the annular body and positioned substantially below the bottom surface of the annular body. Each of the plurality of posts includes an inner core of thermal pyrolytic graphite (TPG). The shadow ring assembly also includes a plasma resistant coating on the annular body and the plurality of posts.
摘要翻译：对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。在一个示例中，用于等离子体处理室的阴影环组件包括包括导热材料的环形体。环形体包括面对等离子体室的内部的顶表面和面对等离子体室中的衬底载体的底表面。多个柱附接到环形体并且基本上位于环形体的底表面的下方。多个柱中的每一个包括热裂解石墨（TPG）的内芯。阴影环组件还包括环形主体上的等离子体涂层和多个柱。

26. 发明授权

US09449858B2 Transparent reflector plate for rapid thermal processing chamber 有权
标题翻译：用于快速热处理室的透明反射板
公开(公告)号：US09449858B2
公开(公告)日：2016-09-20
申请号：US13184895
申请日：2011-07-18
申请人： Blake R. Koelmel , Aaron M. Hunter , Alexander N. Lerner
发明人： Blake R. Koelmel , Aaron M. Hunter , Alexander N. Lerner
IPC分类号： H01L21/67 , F27B5/14 , F27B5/18 , F27D11/02 , F27B5/06 , F27D19/00
CPC分类号： H01L21/67115 , F27B5/06 , F27B5/14 , F27B5/18 , F27D11/02 , F27D2019/0003 , H01L21/67011 , H01L21/67248
摘要： The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a ceramic reflector plate, which may be optically transparent. The reflector plate may include a reflective coating and be part of a reflector plate assembly in which the reflector plate is assembled to a baseplate.
摘要翻译：本发明一般涉及用于处理衬底的方法和装置。本发明的实施例包括用于处理包括可以是光学透明的陶瓷反射板的基板的装置。反射板可以包括反射涂层，并且是反射板组件的一部分，其中反射板组装到基板上。

27. 发明授权

US08698048B2 High temperature vacuum chuck assembly 有权
标题翻译：高温真空吸盘组件
公开(公告)号：US08698048B2
公开(公告)日：2014-04-15
申请号：US13456455
申请日：2012-04-26
申请人： Alexander N. Lerner , Blake Koelmel , Mehran Behdjat
发明人： Alexander N. Lerner , Blake Koelmel , Mehran Behdjat
IPC分类号： F27B5/06 , F27D5/00 , H01L21/68 , H01L21/683
CPC分类号： B25B11/005 , H01L21/67109 , H01L21/6838 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10T279/11
摘要： A vacuum chuck and a process chamber equipped with the same are provided. The vacuum chuck assembly comprises a support body, a plurality of protrusions, a plurality of channels, at least one support member supporting the support body, at least one resilient member coupled with the support member, a hollow shaft supporting the support body, at least one electrical connector disposed through the hollow shaft, and an air-cooling apparatus. The support body has a support surface for holding a substrate (such as a wafer) thereon. The protrusions are formed on and project from the support surface for creating a gap between the substrate and the support surface. The channels are formed on the support surface for generating reduced pressure in the gap. The air-cooling apparatus is used for providing air cooling in the vicinity of the electrical connector.
摘要翻译：提供了一个真空吸盘和一个装有它的处理室。真空吸盘组件包括支撑体，多个突起，多个通道，支撑支撑体的至少一个支撑构件，与支撑构件联接的至少一个弹性构件，至少支撑支撑体的中空轴通过中空轴设置的一个电连接器和空气冷却装置。支撑体具有用于在其上保持基板（例如晶片）的支撑表面。突起形成在支撑表面上并从支撑表面突出，以在基板和支撑表面之间形成间隙。通道形成在支撑表面上，用于在间隙中产生减压。空气冷却装置用于在电连接器附近提供空气冷却。

28. 发明授权

US08608853B2 Thermal reactor with improved gas flow distribution 有权
标题翻译：具有改善气流分布的热反应器
公开(公告)号：US08608853B2
公开(公告)日：2013-12-17
申请号：US13296531
申请日：2011-11-15
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

29. 发明申请

US20130043235A1 RAPID THERMAL PROCESSING CHAMBER WITH MICRO-POSITIONING SYSTEM 有权
标题翻译：具有微定位系统的快速热处理室
公开(公告)号：US20130043235A1
公开(公告)日：2013-02-21
申请号：US13656158
申请日：2012-10-19
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： F27D11/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译：描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

30. 发明申请

US20120122253A1 APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE 有权
标题翻译：在热表面上对准和定位冷基底的装置和方法
公开(公告)号：US20120122253A1
公开(公告)日：2012-05-17
申请号：US13343523
申请日：2012-01-04
申请人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
发明人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
IPC分类号： H01L21/66 , H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

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