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21. 发明授权

US06550920B2 Liquid crystal projector 有权
公开(公告)号：US06550920B2
公开(公告)日：2003-04-22
申请号：US09930162
申请日：2001-08-16
申请人： Satoshi Hosoda , Kenji Yamauchi , Kouji Terami , Yoshihiko Yano
发明人： Satoshi Hosoda , Kenji Yamauchi , Kouji Terami , Yoshihiko Yano
IPC分类号： G03B2116
CPC分类号： G03B21/18
摘要： A liquid crystal projector provided with one or a plurality of cooling fans comprises a temperature sensor for sensing the internal temperature of the liquid crystal projector, and a driving control circuit for controlling the driving voltage of the cooling fan on the basis of the temperature sensed by the temperature sensor. A driving control circuit controls the driving voltage of the cooling fan in proportion to the temperature sensed by the temperature sensor in a case where the temperature sensed by the temperature sensor is within a predetermined range.

22. 发明授权

US06121647A Film structure, electronic device, recording medium, and process of preparing ferroelectric thin films 失效
标题翻译：薄膜结构，电子器件，记录介质和制备铁电薄膜的工艺
公开(公告)号：US06121647A
公开(公告)日：2000-09-19
申请号：US883456
申请日：1997-06-26
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： C30B25/18 , C23C14/00 , C23C14/08 , C30B29/22 , C30B29/32 , G01Q60/38 , G01Q80/00 , G11B9/00 , G11B9/02 , H01B3/00 , H01L21/314 , H01L21/316 , H01L29/51 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： C23C14/08 , C23C14/0026 , H01L21/31691 , H01L29/516 , Y10S438/909
摘要： In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8.ltoreq.(Pb+Rn)/Ti.ltoreq.1.3 and 0.5.ltoreq.Pb/(Pb+Rn).ltoreq.0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.
摘要翻译：在包含在基板上形成的铁电薄膜的薄膜结构体中，铁电薄膜含有原子比为0.8≤（Pb + Rn）的稀土元素（Rn），Pb，Ti和O，具有钙钛矿型晶体结构，并且具有（001）单向取向或（001）取向和（100）的取向的混合物，其中，Ti（Ti）/ = 1.3和0.5

23. 发明授权

US5753934A Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film 失效
公开(公告)号：US5753934A
公开(公告)日：1998-05-19
申请号：US524904
申请日：1995-09-07
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： H01L21/02 , H01L21/314 , H01L29/06 , H01L23/58
CPC分类号： H01L28/60 , H01L28/55
摘要： A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.

24. 发明授权

US08466615B2 EL functional film and EL element 有权
标题翻译： EL功能膜和EL元件
公开(公告)号：US08466615B2
公开(公告)日：2013-06-18
申请号：US10547399
申请日：2004-02-27
申请人： Masaki Takahashi , Yoshihiko Yano , Tomoyuki Oike , Naruki Kataoka
发明人： Masaki Takahashi , Yoshihiko Yano , Tomoyuki Oike , Naruki Kataoka
IPC分类号： H05B33/14 , H01J1/62
CPC分类号： C09K11/621 , C09K11/7729
摘要： An EL element 1 comprises EL functional layers 6, 10 comprising Ga2O3:Eu between a thick film insulator layer 16 and an upper electrode 12 provided on a substrate 2 on which a lower electrode 4 was formed and a light-emitting layer 8 comprising MgGa2O4 formed therebetween. The EL functional layers 6, 10 have the dual functions of insulating layers and electron doping layers. Due to this, the EL element 1 has a low drive voltage and high light-emitting brightness, and the structure of the EL element is simplified.
摘要翻译： EL元件1包括在厚膜绝缘体层16和设置在其上形成有下电极4的基板2上的上电极12之间包括Ga 2 O 3：Eu的EL功能层6,10，以及形成有包含MgGa 2 O 4的发光层8 之间。 EL功能层6,10具有绝缘层和电子掺杂层的双重功能。由此，EL元件1具有低的驱动电压和高的发光亮度，并且EL元件的结构被简化。

25. 发明授权

US08218287B2 Thin-film device 有权
标题翻译：薄膜装置
公开(公告)号：US08218287B2
公开(公告)日：2012-07-10
申请号：US12727549
申请日：2010-03-19
申请人： Akira Shibue , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
发明人： Akira Shibue , Yoshihiko Yano , Hitoshi Saita , Kenji Horino
IPC分类号： H01G4/06
CPC分类号： H01G4/33 , H01G4/232 , H01G4/30 , H01L28/40
摘要： A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.
摘要翻译：薄膜器件包括由金属制成的基极，第一介电层，第一内部电极，第二电介质层，第二内部电极和第三电介质层。设T1为与多个电介质层中的基极接触的最低的第一电介质层的厚度，Tmin为除了第一电介质层之外的多个电介质层中最薄的电介质层的厚度，T1> Tmin。由于基极的表面粗糙度和安装在最下层电介质层上的内电极的表面粗糙度，使得第一电介质层比其他电介质层中最薄的电介质层的电介质层增加了从金属表面突出的金属部分之间的距离，从而减少漏电流。

26. 发明申请

US20110075319A1 THIN-FILM CAPACITOR 有权
标题翻译：薄膜电容器
公开(公告)号：US20110075319A1
公开(公告)日：2011-03-31
申请号：US12876611
申请日：2010-09-07
申请人： Yasunobu OIKAWA , Yoshihiko Yano
发明人： Yasunobu OIKAWA , Yoshihiko Yano
IPC分类号： H01G4/008 , H01G4/005
CPC分类号： H01G4/005 , H01G4/008 , H01G4/33
摘要： To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability. The thin-film capacitor comprises: a dielectric layer deposited on a base electrode; an upper electrode layer deposited on the dielectric layer; a terminal electrode including an adhesion layer, a seed layer, and a plating layer; a resin layer for wiring provided between the upper electrode layer and the terminal electrode for isolating the upper electrode layer from the terminal electrode; and a wiring layer provided so as to extend through the resin layer for wiring in contact with the adhesion layer for electrically connecting the upper electrode layer and the terminal electrode, wherein a composition of the wiring layer differs from that of the adhesion layer of the terminal electrode, and wherein a reducing power of the wiring layer to the dielectric layer is smaller than that of the adhesion layer.
摘要翻译：提供能够防止由端子电极和电介质层的粘附层之间的直接接触引起的电特性劣化的薄膜电容器，以提高可靠性。薄膜电容器包括：沉积在基极上的电介质层; 沉积在电介质层上的上电极层; 包括粘合层，种子层和镀层的端子电极; 用于在上电极层和端子电极之间设置用于将上电极层与端子电极隔离的布线用树脂层; 以及布线层，其设置成延伸穿过用于电连接上电极层和端子电极的粘合层接触的布线用树脂层，其中布线层的组成与端子的粘合层的组成不同电极，并且其中所述布线层到所述电介质层的还原能力小于所述粘合层的还原能力。

27. 发明授权

US06821647B2 Phosphor thin film preparation method, and EL panel 有权
标题翻译：荧光体薄膜制备方法和EL面板
公开(公告)号：US06821647B2
公开(公告)日：2004-11-23
申请号：US10125477
申请日：2002-04-19
申请人： Yoshihiko Yano , Tomoyuki Oike
发明人： Yoshihiko Yano , Tomoyuki Oike
IPC分类号： B32B1900
CPC分类号： C09K11/7734 , C09K11/7703 , C09K11/7706 , C09K11/7731 , C09K11/7771 , H05B33/14 , Y10S428/917
摘要： The invention provides a phosphor thin film having a high luminance, a satisfactory color purity enough to eliminate a need for filters, and a long luminance life, and best suited for each element of RGB in full color EL panels. The phosphor thin film of the invention comprises a matrix material and a luminescent center. The matrix material is an oxysulfide containing at least an alkaline earth element, Ga and/or In, sulfur (S) and oxygen (O). In the matrix material, the atomic ratio of oxygen to the total of oxygen and sulfur, O/(S+O), is from 0.1 to 0.85.
摘要翻译：本发明提供了一种具有高亮度，令人满意的色纯度足以消除对滤色器的需求和长亮度寿命的荧光体薄膜，并且最适合于全彩色EL面板中的RGB元件。本发明的荧光体薄膜包括基质材料和发光中心。基质材料是至少含有碱土金属元素Ga和/或In，硫（S）和氧（O）的氧硫化物。在基体材料中，氧与氧和硫的总和O /（S + O）的原子比为0.1〜0.85。

28. 发明授权

US06258459B1 Multilayer thin film 有权
标题翻译：多层薄膜
公开(公告)号：US06258459B1
公开(公告)日：2001-07-10
申请号：US09300452
申请日：1999-04-28
申请人： Takao Noguchi , Yoshihiko Yano
发明人： Takao Noguchi , Yoshihiko Yano
IPC分类号： B32B904
CPC分类号： B32B15/04 , C30B23/02 , C30B29/32
摘要： The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal. The multilayer thin film according to the second embodiment of the invention comprises a metal thin film that is a cubic (100) unidirectionally oriented epitaxial film, and a buffer layer where a {111} facet plane is present on the interface of the buffer layer in contact with the metal thin film.
摘要翻译：本发明的第一个目的是提供能够容易地获得具有（100）取向（001）取向或（111）取向的钙钛矿氧化物薄膜的方法，本发明的第二个目的是提供一种多层薄膜膜包含具有良好结晶度的单向取向金属薄膜。根据本发明第一实施方案的多层薄膜包含缓冲层和存在于其上的钙钛矿氧化物薄膜。缓冲层与钙钛矿氧化物薄膜的界面由{111}面平面构成。基本平行于面平面，存在钙钛矿氧化物薄膜的立方晶体，菱方晶，四方晶或正交晶体的{110}面，正方晶或正交晶体的{101}面或正交晶体。根据本发明的第二实施方式的多层薄膜包括作为立方体（100）单向取向外延膜的金属薄膜和在缓冲层的界面上存在{111}面平面的缓冲层与金属薄膜接触。

29. 发明授权

US5919515A Ferroelectric thin film, electric device and method for preparing ferroelectric thin film 失效
标题翻译：制备铁电YMnO3薄膜的方法
公开(公告)号：US5919515A
公开(公告)日：1999-07-06
申请号：US855444
申请日：1997-05-13
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： C30B29/22 , C23C14/00 , C23C14/02 , C23C14/08 , C30B23/02 , H01G4/33 , H01L21/283 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , C23C14/24
CPC分类号： C23C14/08 , C23C14/0021 , C23C14/024 , C30B23/02 , C30B29/22
摘要： On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.
摘要翻译：在诸如硅的单晶衬底上，主要由稀土元素（包括钪和钇）组成的具有YMnO 3六方晶体结构的铁电薄膜，锰和氧以及平行于衬底表面取向的c面是形成，优选地具有外延氧化膜或导电外延膜之间。适用于具有MFIS和MFMIS结构的门型非易失性存储器件。

30. 发明授权

US08411411B2 Thin-film capacitor 有权
标题翻译：薄膜电容器
公开(公告)号：US08411411B2
公开(公告)日：2013-04-02
申请号：US12876611
申请日：2010-09-07
申请人： Yasunobu Oikawa , Yoshihiko Yano
发明人： Yasunobu Oikawa , Yoshihiko Yano
IPC分类号： H01G4/228 , H01G4/008
CPC分类号： H01G4/005 , H01G4/008 , H01G4/33
摘要： To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability. The thin-film capacitor comprises: a dielectric layer deposited on a base electrode; an upper electrode layer deposited on the dielectric layer; a terminal electrode including an adhesion layer, a seed layer, and a plating layer; a resin layer for wiring provided between the upper electrode layer and the terminal electrode for isolating the upper electrode layer from the terminal electrode; and a wiring layer provided so as to extend through the resin layer for wiring in contact with the adhesion layer for electrically connecting the upper electrode layer and the terminal electrode, wherein a composition of the wiring layer differs from that of the adhesion layer of the terminal electrode, and wherein a reducing power of the wiring layer to the dielectric layer is smaller than that of the adhesion layer.
摘要翻译：提供能够防止由端子电极和电介质层的粘附层之间的直接接触引起的电特性劣化的薄膜电容器，以提高可靠性。薄膜电容器包括：沉积在基极上的电介质层; 沉积在电介质层上的上电极层; 包括粘合层，种子层和镀层的端子电极; 用于在上电极层和端子电极之间设置用于将上电极层与端子电极隔离的布线用树脂层; 以及布线层，其设置成延伸穿过用于电连接上电极层和端子电极的粘合层接触的布线用树脂层，其中布线层的组成与端子的粘合层的组成不同电极，并且其中所述布线层到所述电介质层的还原能力小于所述粘合层的还原能力。

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