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    • 26. 发明授权
    • Polishing apparatus and polishing method
    • 抛光设备和抛光方法
    • US5904609A
    • 1999-05-18
    • US637433
    • 1996-04-25
    • Atsushi FukurodaYoshihiro ArimotoKo Nakamura
    • Atsushi FukurodaYoshihiro ArimotoKo Nakamura
    • B24B37/04G05B19/416B24B49/00
    • B24B37/005G05B19/4163G05B2219/45199G05B2219/45232G05B2219/49085
    • A polishing apparatus comprises a first surface plate for supporting a polishing object, a driving mechanism for rotating the first surface plate, a second surface plate arranged so as to oppose to the first surface plate, an abrasive cloth stuck to the second surface plate, a vibration detector attached to the first surface plate or the second surface plate for detecting vibration in polishing, a controlling portion for controlling polishing operation of the first surface plate and the second surface plate, and signal analyzing unit for analyzing vibration intensity detected by the a vibration detector through frequency analysis, integrating the vibration intensity relative to time, and transmitting a polishing stop signal to stop polishing operation of the first surface plate and the second surface plate to the controlling portion when variation in a resultant integral value relative to time is less than a first reference value or when the resultant integral value is less than a second reference value.
    • 抛光装置包括用于支撑抛光对象的第一表面板,用于旋转第一表面板的驱动机构,与第一表面板相对布置的第二表面板,粘附到第二表面板的研磨布, 振动检测器,附接到第一表面板或第二表面板,用于检测抛光中的振动;控制部分,用于控制第一表面板和第二表面板的抛光操作;以及信号分析单元,用于分析由振动检测的振动强度 检测器通过频率分析,相对于时间的振动强度积分,并且当所得到的积分值相对于时间的变化小于时,传递抛光停止信号以停止将第一表面板和第二表面板的抛光操作到控制部分 第一参考值或当所得积分值小于seco时 nd参考值。
    • 29. 发明授权
    • Semiconductor device and method for manufacturing the same
    • 半导体装置及其制造方法
    • US08263419B2
    • 2012-09-11
    • US12041274
    • 2008-03-03
    • Ko Nakamura
    • Ko Nakamura
    • H01L21/00
    • H01L27/11502H01L27/11507
    • According to the present invention, there is provided a method for manufacturing a semiconductor device, including the steps of forming an insulating film on a silicon substrate, forming a first conductive film on the insulating film, forming an aluminum crystal layer on the first conductive film, forming a ferroelectric film containing Pb(ZrxTi1-x)O3 (where 0≦x≦1) on the aluminum crystal layer, forming a second conductive film on the ferroelectric film, and patterning the first conductive film, the ferroelectric film, and the second conductive film to form a capacitor including a lower electrode, a capacitor dielectric film, and an upper electrode which are laminated sequentially.
    • 根据本发明,提供一种制造半导体器件的方法,包括以下步骤:在硅衬底上形成绝缘膜,在绝缘膜上形成第一导电膜,在第一导电膜上形成铝结晶层 在铝结晶层上形成含有Pb(Zr x Ti 1-x)O 3(其中0≦̸ x≦̸ 1)的铁电体膜,在强电介质膜上形成第2导电膜,对第1导电膜,铁电体膜和 第二导电膜以形成依次层叠的包括下电极,电容器电介质膜和上电极的电容器。
    • 30. 发明授权
    • Histidine derivatives
    • 组氨酸衍生物
    • US08236844B2
    • 2012-08-07
    • US12087591
    • 2007-01-23
    • Ko NakamuraYoshitaka NakazawaMinoru KawamuraKunihiko HigashiuraTomoshi Miura
    • Ko NakamuraYoshitaka NakazawaMinoru KawamuraKunihiko HigashiuraTomoshi Miura
    • C07D233/64A61K31/4172
    • C07D233/64A61K31/4172
    • A novel histidine derivative represented by the following formula (I), and a pharmaceutically acceptable salt and hydrate thereof, useful as a pharmaceutical agent such as analgesics for the treatment of various kinds of acute or chronic pain diseases and of neuropathic pain diseases: wherein, R1 is hydrogen, alkyl having 1 to 6 carbon(s) or benzyl which may be substituted with alkyl having 1 to 4 carbon(s) or halogen; R2 is hydrogen or alkyl having 1 to 4 carbon(s); R3 and R4 are same or different and each is hydrogen, alkyl having 1 to 4 carbon(s) or phenyl which may be substituted with any one or two of alkyl having 1 to 6 carbon(s), alkoxy having 1 to 6 carbon(s), halogen, trifluoromethyl, nitro and cyano; and R5 is hydrogen or an alkyl group having 1 to 4 carbon(s).
    • 由下式(I)表示的新型组氨酸衍生物及其药学上可接受的盐和水合物,可用作治疗各种急性或慢性疼痛疾病和神经性疼痛疾病的止​​痛药等药剂,其中, R1是氢,具有1至6个碳原子的烷基或可被具有1至4个碳原子的烷基或卤素取代的苄基; R2是氢或具有1至4个碳的烷基; R3和R4相同或不同,各自为氢,可具有1至4个碳的烷基或可被具有1至6个碳的烷基的任何一个或两个的烷基取代的苯基,具有1至6个碳的烷氧基( s),卤素,三氟甲基,硝基和氰基; 并且R 5是氢或具有1至4个碳的烷基。