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1. 发明申请

US20120171785A1 MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120171785A1
公开(公告)日：2012-07-05
申请号：US13417811
申请日：2012-03-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/02
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

2. 发明申请

US20050161717A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050161717A1
公开(公告)日：2005-07-28
申请号：US11036322
申请日：2005-01-18
申请人： Ko Nakamura , Kazuaki Takai
发明人： Ko Nakamura , Kazuaki Takai
IPC分类号： H01L21/02 , H01L21/314 , H01L21/8246 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/56
摘要： After bottom electrode film is formed, a first ferroelectric film is formed thereon. Then, the first ferroelectric film is allowed to crystallize. Thereafter, a second ferroelectric film is formed on the first ferroelectric film. Next, a top electrode film is formed on the second ferroelectric film, and the second ferroelectric film is allowed to crystallize.
摘要翻译：在形成底电极膜之后，在其上形成第一铁电体膜。然后，使第一铁电体膜结晶。此后，在第一铁电体膜上形成第二铁电体膜。接着，在第二强电介质膜上形成顶部电极膜，使第二强电介质膜结晶化。

3. 发明授权

US08652854B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08652854B2
公开(公告)日：2014-02-18
申请号：US13417811
申请日：2012-03-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

4. 发明授权

US08153448B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08153448B2
公开(公告)日：2012-04-10
申请号：US12453451
申请日：2009-05-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

5. 发明授权

US07547933B2 Semiconductor device and manufacturing method of a semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US07547933B2
公开(公告)日：2009-06-16
申请号：US10695643
申请日：2003-10-29
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

6. 发明申请

US20080160645A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080160645A1
公开(公告)日：2008-07-03
申请号：US12068390
申请日：2008-02-06
申请人： Ko Nakamura , Kazuaki Takai
发明人： Ko Nakamura , Kazuaki Takai
IPC分类号： H01L21/02
CPC分类号： H01L21/02197 , H01L21/022 , H01L21/02266 , H01L21/02356 , H01L28/56
摘要： After bottom electrode film is formed, a first ferroelectric film is formed thereon. Then, the first ferroelectric film is allowed to crystallize. Thereafter, a second ferroelectric film is formed on the first ferroelectric film. Next, a top electrode film is formed on the second ferroelectric film, and the second ferroelectric film is allowed to crystallize.
摘要翻译：在形成底电极膜之后，在其上形成第一铁电体膜。然后，使第一铁电体膜结晶。此后，在第一铁电体膜上形成第二铁电体膜。接着，在第二强电介质膜上形成顶部电极膜，使第二强电介质膜结晶化。

7. 发明授权

US08497537B2 Semiconductor device with ferro-electric capacitor 失效
标题翻译：具有铁电电容器的半导体器件
公开(公告)号：US08497537B2
公开(公告)日：2013-07-30
申请号：US12128088
申请日：2008-05-28
申请人： Wensheng Wang , Ko Nakamura
发明人： Wensheng Wang , Ko Nakamura
IPC分类号： H01L21/02
CPC分类号： H01L21/02107 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor.
摘要翻译：半导体器件具有漏电流小的铁电电容，即使在小型化时也具有较少的工艺劣化。半导体器件包括：形成在半导体衬底中的半导体元件; 夹层绝缘膜和具有氢/水分屏蔽功能的下绝缘屏蔽膜，形成覆盖半导体元件的叠层; 形成在下绝缘屏蔽膜上方的导电粘附增强膜; 以及包含形成在导电性粘合增强膜上的下电极的铁电电容器，形成在下电极上的铁电膜，并且设置在俯视图中的下电极内;以及上电极，形成在铁电膜，并且设置在平面图所示的铁电膜内，其中，导电性粘附增强膜具有提高下部电极的附着力和降低铁电体的漏电流的功能。

8. 发明授权

US07816150B2 Fabrication process of semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US07816150B2
公开(公告)日：2010-10-19
申请号：US11933684
申请日：2007-11-01
申请人： Ko Nakamura
发明人： Ko Nakamura
IPC分类号： H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method for fabricating a semiconductor device includes the steps of forming a first ferroelectric film over a lower electrode, crystallizing the first ferroelectric film, forming a second ferroelectric film in an amorphous state over the first ferroelectric film so as to fill voids existing on a surface of the first ferroelectric film, and forming an upper electrode over the second ferroelectric film of the amorphous state, wherein the crystallizing step of the first ferroelectric film is conducted by a thermal annealing process at a temperature of 585° C. or higher.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在下电极上形成第一铁电体膜，使第一铁电体膜结晶，在第一铁电体膜上形成非晶状态的第二铁电体膜，以填充存在于表面上的空隙并且在非晶状态的第二铁电体膜上形成上电极，其中第一强电介质膜的结晶步骤通过热退火工艺在585℃或更高的温度下进行。

9. 发明授权

US07078242B2 Manufacturing method of semiconducter device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07078242B2
公开(公告)日：2006-07-18
申请号：US10835572
申请日：2004-04-30
申请人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
发明人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
IPC分类号： H01I21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.
摘要翻译：通过反应溅射法在PLZT膜上形成作为第一导电氧化膜的IrO xS膜。此后，通过例如RTA的热处理在含有分压小于5％的大气压的氧的气氛中进行。结果促进了PLZT膜的结晶化，对IrO x薄膜进行退火处理。此后，在600℃或更高（例如650℃）下的炉退火在例如O 2 2气氛中进行60分钟，作为回收退火以回收PLZT中的氧缺乏电影。随后，通过溅射法在IrO 2膜上形成IrO 2膜作为第二导电氧化物膜。

10. 发明申请

US20050136556A1 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20050136556A1
公开(公告)日：2005-06-23
申请号：US10835572
申请日：2004-04-30
申请人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
发明人： Katsuyoshi Matsuura , Wensheng Wang , Ko Nakamura
IPC分类号： H01L21/8234 , H01L21/00 , H01L21/02 , H01L21/8246 , H01L27/088 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.
摘要翻译：通过反应溅射法在PLZT膜上形成作为第一导电氧化膜的IrO xS膜。此后，通过例如RTA的热处理在含有分压小于5％的大气压的氧的气氛中进行。结果促进了PLZT膜的结晶化，对IrO x薄膜进行退火处理。此后，在600℃或更高（例如650℃）下的炉退火在例如O 2 2气氛中进行60分钟，作为回收退火以回收PLZT中的氧缺乏电影。随后，通过溅射法在IrO 2膜上形成IrO 2膜作为第二导电氧化物膜。

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