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21. 发明申请

US20080049226A1 APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 有权
标题翻译：用于使用散射检测来检测重叠错误的装置和方法
公开(公告)号：US20080049226A1
公开(公告)日：2008-02-28
申请号：US11926603
申请日：2007-10-29
申请人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant
发明人： Walter Mieher , Ady Levy , Boris Golovanesky , Michael Friedmann , Ian Smith , Michael Adel , Anatoly Fabrikant
IPC分类号： G01B11/00
CPC分类号： G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
摘要： Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.
摘要翻译： Disclose是一个组合的散点图标记，包括能够被测量以确定CD或轮廓信息的散射关键维度（CD）或轮廓目标，以及布置在散射测量CD或轮廓目标上的散射测绘覆盖目标，散射测绘覆盖目标与散射光谱CD协调或轮廓目标以形成能够被测量以确定覆盖的散射测量标记。

22. 发明授权

US07297453B2 Systems and methods for mitigating variances on a patterned wafer using a prediction model 有权
标题翻译：使用预测模型减轻图案化晶片上的方差的系统和方法
公开(公告)号：US07297453B2
公开(公告)日：2007-11-20
申请号：US11394900
申请日：2006-03-31
申请人： Sterling G. Watson , Ady Levy , Chris A. Mack , Stanley E. Stokowski , Zain K. Saidin
发明人： Sterling G. Watson , Ady Levy , Chris A. Mack , Stanley E. Stokowski , Zain K. Saidin
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F1/84 , G03F1/36 , Y10S430/146
摘要： Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.
摘要翻译：公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积在指定位置。在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

23. 发明授权

US07130029B2 Methods and systems for determining an adhesion characteristic and a thickness of a specimen 有权
公开(公告)号：US07130029B2
公开(公告)日：2006-10-31
申请号：US09956850
申请日：2001-09-20
申请人： Dan Wack , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , John Fielden
发明人： Dan Wack , Ady Levy , Kyle A. Brown , Gary Bultman , Mehrdad Nikoonahad , John Fielden
IPC分类号： G01N21/88
CPC分类号： G03F7/70708 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, an adhesion characteristic and a thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

24. 发明申请

US20120281275A1 Systems and Methods for Determining One or More Characteristics of a Specimen Using Radiation in the Terahertz Range 审中-公开
标题翻译：用于确定在太赫兹范围内使用辐射的样品的一个或多个特性的系统和方法
公开(公告)号：US20120281275A1
公开(公告)日：2012-11-08
申请号：US13552642
申请日：2012-07-19
申请人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
发明人： Ady Levy , Samuel Ngai , Christopher F. Bevis , Stefano Concina , John Fielden , Walter Mieher , Dieter Mueller , Neil Richardson , Dan Wack , Larry Wagner
IPC分类号： G06K7/10 , B05C11/00 , B05C9/00 , B05C11/02 , B05C5/02 , C23C16/44
CPC分类号： G01N21/9505 , G01N21/3581 , H01L22/12
摘要： Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.
摘要翻译：提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。一个系统包括被配置为用辐射照射样本的照明子系统。该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。检测到的辐射包括太赫兹范围内的辐射。另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

25. 发明申请

US20120256559A1 LED Solar Illuminator 失效
标题翻译： LED太阳能照明器
公开(公告)号：US20120256559A1
公开(公告)日：2012-10-11
申请号：US13081734
申请日：2011-04-07
申请人： Guoheng Zhao , Ady Levy , Alex Salnik , Mehdi Vaez-Iravani , Lena Nicolaides , Samuel S.H. Ngai
发明人： Guoheng Zhao , Ady Levy , Alex Salnik , Mehdi Vaez-Iravani , Lena Nicolaides , Samuel S.H. Ngai
IPC分类号： H05B37/02
CPC分类号： H05B33/0803
摘要： An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.
摘要翻译：一种用于照射目标表面的装置，该装置具有多个LED阵列，其中每个阵列具有多个独立可寻址的LED，并且其中至少一个阵列以大约四十五度之间的角度设置并且相对于目标表面大约九十度，其中所有的阵列将光提供到光管中，光管具有由反射材料制成的内壁，其中离开光管的光照射目标表面，以及用于调节的控制器独立寻址光源的强度。

26. 发明授权

US08179530B2 Methods and systems for determining a critical dimension and overlay of a specimen 有权
标题翻译：用于确定试样的临界尺寸和覆盖层的方法和系统
公开(公告)号：US08179530B2
公开(公告)日：2012-05-15
申请号：US12830408
申请日：2010-07-05
申请人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
发明人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
IPC分类号： G01B11/00 , G01B11/30 , G01B11/14 , G01B11/28
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位; 缺陷和薄膜特性; 临界尺寸和缺陷; 临界尺寸和薄膜特性; 临界尺寸，薄膜特性和缺陷; 宏观缺陷和微缺陷; 平整度，薄膜特性和缺陷; 重叠错位和平整度; 植入物特征和缺陷; 附着力和厚度。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

27. 发明申请

US20110027919A1 Measurement and control of strained devices 有权
公开(公告)号：US20110027919A1
公开(公告)日：2011-02-03
申请号：US12904731
申请日：2010-10-14
申请人： Daniel C. Wack , Ady Levy , John Fielden
发明人： Daniel C. Wack , Ady Levy , John Fielden
IPC分类号： H01L21/66 , G06F19/00 , G01L1/00
CPC分类号： G01B11/245 , G01B11/16 , G01B2210/56 , G01L5/0047
摘要： A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.

28. 发明授权

US07879627B2 Overlay marks and methods of manufacturing such marks 有权
标题翻译：覆盖标记和制造这种标记的方法
公开(公告)号：US07879627B2
公开(公告)日：2011-02-01
申请号：US12533295
申请日：2009-07-31
申请人： Mark Ghinovker , Michael Adel , Walter D. Mieher , Ady Levy , Dan Wack
发明人： Mark Ghinovker , Michael Adel , Walter D. Mieher , Ady Levy , Dan Wack
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： G03F7/70633 , G03F9/7076 , G06K9/00281 , G06T7/0004 , G06T7/33 , G06T2207/30148 , Y10S438/975
摘要： An overlay mark for determining the relative shift between two or more successive layers of a substrate and methods for using such overlay mark are disclosed. In one embodiment, the overlay mark includes at least one test pattern for determining the relative shift between a first and a second layer of the substrate in a first direction. The test pattern includes a first set of working zones and a second set of working zones. The first set of working zones are disposed on a first layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The second set of working zones are disposed on a second layer of the substrate and have at least two working zones diagonally opposed and spatially offset relative to one another. The first set of working zones are generally angled relative to the second set of working zones thus forming an “X” shaped test pattern.
摘要翻译：公开了用于确定衬底的两个或更多个连续层之间的相对位移的覆盖标记以及使用这种重叠标记的方法。在一个实施例中，覆盖标记包括至少一个测试图案，用于在第一方向上确定基板的第一和第二层之间的相对移动。测试模式包括第一组工作区和第二组工作区。第一组工作区域设置在基板的第一层上，并且具有相对于彼此对角地相对且空间上偏移的至少两个工作区域。所述第二组工作区域设置在所述基板的第二层上，并且具有至少两个工作区域，所述至少两个工作区域相对于彼此对角地相对并且在空间上偏移。第一组工作区域通常相对于第二组工作区域成角度，从而形成“X”形测试图案。

29. 发明授权

US07838309B1 Measurement and control of strained devices 有权
标题翻译：应变装置的测量和控制
公开(公告)号：US07838309B1
公开(公告)日：2010-11-23
申请号：US12199633
申请日：2008-08-27
申请人： Daniel C. Wack , Ady Levy , John Fielden
发明人： Daniel C. Wack , Ady Levy , John Fielden
IPC分类号： H01L21/00
CPC分类号： G01B11/245 , G01B11/16 , G01B2210/56 , G01L5/0047
摘要： A method that includes measuring stress on at least one of a monitor substrate, a production substrate, and a proxy device on a production substrate to produce stress data, measuring shape on at least one of a proxy device on a production substrate and a production device on a production substrate to produce shape data, and inputting the stress data and the shape data into an elastic deformation calculation to determine a stress value for a production device.
摘要翻译：一种方法，其包括测量生产基板上的监视器基板，生产基板和代理装置中的至少一个上的应力，以产生应力数据，在生产基板上的代理装置和生产装置中的至少一个上测量形状在生产基板上产生形状数据，并将应力数据和形状数据输入到弹性变形计算中以确定生产装置的应力值。

30. 发明申请

US20100271621A1 METHODS AND SYSTEMS FOR DETERMINING A CRITICAL DIMENSION AND OVERLAY OF A SPECIMEN 有权
标题翻译：确定标本的关键尺寸和覆盖物的方法和系统
公开(公告)号：US20100271621A1
公开(公告)日：2010-10-28
申请号：US12830408
申请日：2010-07-05
申请人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
发明人： Ady Levy , Kyle A. Brown , Rodney Smedt , Gary Bultman , Mehrdad Nikoonahad , Dan Wack , John Fielden , Ibrahim Abdul-Halim
IPC分类号： G01N21/00 , G01B11/14 , G01B11/00
CPC分类号： G01N21/27 , G01N21/211 , G01N21/47 , G01N21/636 , G01N21/64 , G01N21/9501 , G01N21/956 , G01N2021/646 , G01N2021/8825 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F7/7065 , G03F7/70658 , G03F7/707 , G03F7/70708 , H01J2237/31701 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
摘要翻译：提供了用于监测半导体制造工艺的方法和系统。系统可以包括被配置为支撑样本并耦合到测量装置的台。测量装置可以包括照明系统和检测系统。照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。例如，系统可以被配置为确定样本的多个属性，包括但不限于临界尺寸和重叠错位; 缺陷和薄膜特性; 临界尺寸和缺陷; 临界尺寸和薄膜特性; 临界尺寸，薄膜特性和缺陷; 宏观缺陷和微缺陷; 平整度，薄膜特性和缺陷; 重叠错位和平整度; 植入物特征和缺陷; 附着力和厚度。以这种方式，测量装置可以执行多个光学和/或非光学测量和/或检查技术。

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