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21. 发明授权

US08188510B2 Semiconductor light-emitting device 有权
公开(公告)号：US08188510B2
公开(公告)日：2012-05-29
申请号：US12873753
申请日：2010-09-01
申请人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
发明人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
IPC分类号： H01L33/26
摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

22. 发明申请

US20120061713A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120061713A1
公开(公告)日：2012-03-15
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/42
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。第一半导体层具有第一和第二部分。发光层设置在第二部分上。第二半导体层设置在发光层上。第一电极设置在第一部分上。第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。焊盘层连接到第二电极。焊盘层的透射率低于第二电极的透射率。第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

23. 发明授权

US08441023B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08441023B2
公开(公告)日：2013-05-14
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke Sato , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke Sato , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

24. 发明授权

US08525194B2 Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer 失效
公开(公告)号：US08525194B2
公开(公告)日：2013-09-03
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

25. 发明申请

US20120292632A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 失效
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20120292632A1
公开(公告)日：2012-11-22
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari SHIODA , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari SHIODA , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/32 , H01L21/20 , H01L29/20
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
摘要翻译：根据一个实施例，氮化物半导体器件包括基底层和功能层。基底层形成在形成在硅衬底上的含Al氮化物半导体层上。基础层的厚度不小于1微米，包括GaN。功能层设置在基础层上。功能层包括第一半导体层。第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。

26. 发明授权

US08952401B2 Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer 有权
标题翻译：半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法
公开(公告)号：US08952401B2
公开(公告)日：2015-02-10
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/02 , H01L33/20 , H01L33/44 , H01L33/08 , H01L33/40 , H01L33/42
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

27. 发明授权

US08809085B2 Method for manufacturing nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US08809085B2
公开(公告)日：2014-08-19
申请号：US13222238
申请日：2011-08-31
申请人： Taisuke Sato , Naoharu Sugiyama , Tomonari Shioda , Toshiki Hikosaka , Shinya Nunoue
发明人： Taisuke Sato , Naoharu Sugiyama , Tomonari Shioda , Toshiki Hikosaka , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/22
CPC分类号： H01L33/0079 , H01L33/22
摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。该方法可以包括通过使用第一处理材料从结构体移除生长衬底。结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。支撑基板结合到氮化物半导体层。该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

28. 发明授权

US08692287B2 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer 有权
标题翻译：氮化物半导体器件，氮化物半导体晶片，以及氮化物半导体层的制造方法
公开(公告)号：US08692287B2
公开(公告)日：2014-04-08
申请号：US13222200
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.
摘要翻译：根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

29. 发明申请

US20120292593A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20120292593A1
公开(公告)日：2012-11-22
申请号：US13222200
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04 , H01L21/20 , H01L29/201
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.
摘要翻译：根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

30. 发明申请

US20130234178A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130234178A1
公开(公告)日：2013-09-12
申请号：US13601015
申请日：2012-08-31
申请人： Satoshi Mitsugi , Naoharu Sugiyama , Taisuke Sato , Shinya Nunoue
发明人： Satoshi Mitsugi , Naoharu Sugiyama , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/12 , H01L33/20
摘要： According to one embodiment, a semiconductor light emitting device includes a silicon substrate, a buffer layer, a foundation semiconductor layer, a first semiconductor layer, a light emitting unit and a second semiconductor layer. The buffer layer is provided on a part of a major surface of the silicon substrate. The foundation semiconductor layer is crystal-grown from an upper surface of the buffer layer, covers a non-formed region of the major surface where the buffer layer is not provided, and is spaced apart from the non-formed region. The first semiconductor layer is provided on the foundation semiconductor layer and has a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and has a second conductivity type.
摘要翻译：根据一个实施例，半导体发光器件包括硅衬底，缓冲层，基底半导体层，第一半导体层，发光单元和第二半导体层。缓冲层设置在硅衬底的主表面的一部分上。基底半导体层从缓冲层的上表面晶体生长，覆盖没有设置缓冲层的主表面的非形成区域，并与非形成区域间隔开。第一半导体层设置在基底半导体层上并且具有第一导电类型。发光单元设置在第一半导体层上。第二半导体层设置在发光单元上并具有第二导电类型。

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