专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08809085B2 Method for manufacturing nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US08809085B2
公开(公告)日：2014-08-19
申请号：US13222238
申请日：2011-08-31
申请人： Taisuke Sato , Naoharu Sugiyama , Tomonari Shioda , Toshiki Hikosaka , Shinya Nunoue
发明人： Taisuke Sato , Naoharu Sugiyama , Tomonari Shioda , Toshiki Hikosaka , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/22
CPC分类号： H01L33/0079 , H01L33/22
摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.
摘要翻译：根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。该方法可以包括通过使用第一处理材料从结构体移除生长衬底。结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。支撑基板结合到氮化物半导体层。该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

2. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

3. 发明申请

US20130087760A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER 有权
标题翻译：半导体发光器件和半导体晶体管
公开(公告)号：US20130087760A1
公开(公告)日：2013-04-11
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

4. 发明授权

US08093083B1 Method for manufacturing a semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08093083B1
公开(公告)日：2012-01-10
申请号：US13029416
申请日：2011-02-17
申请人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Naoharu Sugiyama , Koichi Tachibana , Shinya Nunoue
发明人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Naoharu Sugiyama , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by supplying a source gas including a first molecule including Ga atoms and a second molecule including In atoms onto a base body. The crystal layer has a ratio xs of a number of the In atoms to a total of the In atoms and the Ga atoms being not less than 0.2 and not more than 0.4. A vapor phase supply ratio xv of In is a ratio of a second partial pressure to a total of first and second partial pressures. The first and second partial pressures are pressure of the first and second molecules and degradation species of the first and second molecules on the source gas, respectively. (1−1/xv)/(1−1/xs) is less than 0.1.
摘要翻译：在一个实施例中，公开了一种用于制造半导体发光器件的方法。该器件包括包含氮化物半导体的晶体层。晶体层含有In和Ga原子。该方法可以包括通过将包括Ga原子的第一分子和包括In原子的第二分子的源气体供应到基体上来形成晶体层。晶体层的In原子数与In原子的总和的比xs和Ga原子的比率不小于0.2且不大于0.4。 In的气相供给比xv是第二分压与第一和第二分压的总和的比。第一和第二分压分别是源气体上的第一和第二分子的压力和第一和第二分子的降解物质。（1-1 / xv）/（1-1 / xs）小于0.1。

5. 发明授权

US08610106B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08610106B2
公开(公告)日：2013-12-17
申请号：US13213821
申请日：2011-08-19
申请人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Toshiki Hikosaka , Yoshiyuki Harada , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/40 , H01L33/06 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

6. 发明授权

US08525194B2 Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer 失效
公开(公告)号：US08525194B2
公开(公告)日：2013-09-03
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

7. 发明授权

US08952401B2 Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer 有权
标题翻译：半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法
公开(公告)号：US08952401B2
公开(公告)日：2015-02-10
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/02 , H01L33/20 , H01L33/44 , H01L33/08 , H01L33/40 , H01L33/42
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

8. 发明申请

US20120292649A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER 有权
标题翻译：半导体发光器件，波形和制造氮化物半导体晶体层的方法
公开(公告)号：US20120292649A1
公开(公告)日：2012-11-22
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/22 , H01L29/00 , H01L21/20
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

9. 发明授权

US08692287B2 Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer 有权
标题翻译：氮化物半导体器件，氮化物半导体晶片，以及氮化物半导体层的制造方法
公开(公告)号：US08692287B2
公开(公告)日：2014-04-08
申请号：US13222200
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.
摘要翻译：根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

10. 发明申请

US20120292593A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20120292593A1
公开(公告)日：2012-11-22
申请号：US13222200
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04 , H01L21/20 , H01L29/201
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02584 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.
摘要翻译：根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式