专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US09243343B2 Vitreous silica crucible 有权
标题翻译：石英玻璃坩埚
公开(公告)号：US09243343B2
公开(公告)日：2016-01-26
申请号：US13166165
申请日：2011-06-22
申请人： Toshiaki Sudo , Hiroshi Kishi
发明人： Toshiaki Sudo , Hiroshi Kishi
IPC分类号： C30B15/10 , C30B29/06 , C30B35/00
CPC分类号： C30B15/10 , C30B29/06 , C30B35/002 , Y10T117/1032
摘要： The present invention provides a vitreous silica crucible which can restrain deterioration of crystallinity of a silicon ingot in multi-pulling. Provided is a vitreous silica crucible for pulling a silicon single crystal, the crucible has a wall having, from an inner surface toward an outer surface of the crucible, a synthetic vitreous silica layer, a natural vitreous silica layer, an impurity-containing vitreous silica layer and a natural vitreous silica layer.
摘要翻译：本发明提供一种能够抑制多晶硅锭的结晶性劣化的石英玻璃坩埚。本发明提供一种用于拉制硅单晶的玻璃状石英坩埚，坩埚具有从坩埚的内表面朝向外表面的合成玻璃状二氧化硅层，天然氧化硅玻璃层，含杂质的玻璃态二氧化硅层和天然玻璃质二氧化硅层。

22. 发明授权

US09187359B2 Method of evaluating silica powder, vitreous silica crucible, and method of manufacturing vitreous silica crucible 有权
标题翻译：二氧化硅粉末，石英玻璃坩埚的评价方法，石英玻璃坩埚的制造方法
公开(公告)号：US09187359B2
公开(公告)日：2015-11-17
申请号：US13197408
申请日：2011-08-03
申请人： Toshiaki Sudo , Hiroshi Kishi
发明人： Toshiaki Sudo , Hiroshi Kishi
IPC分类号： C30B35/00 , C03C1/02 , C03B19/09
CPC分类号： C03C1/02 , C03B19/095 , Y10T117/1032
摘要： The present invention provides a method of evaluating silica powder which, enables precise prediction of easiness of crystallization of a vitreous silica crucible. According to the present invention, provided is a method of evaluating silica powder including a sample preparation process for preparing a vitrified sample by fusing silica powder at a fusing temperature of 1700 to 1900 deg. C., followed by cooling; a sample heat treatment process for retaining the sample for 30 minutes or more at a temperature of 1400 to 1750 deg. C., followed by cooling; and a sample evaluation process for evaluating a state of opacification of the sample after the sample heat treatment process.
摘要翻译：本发明提供二氧化硅粉末的评价方法，其能够精确地预测石英玻璃坩埚的结晶容易度。根据本发明，提供一种评价二氧化硅粉末的方法，其包括在1700〜1900℃的熔融温度下熔融二氧化硅粉末制备玻璃化样品的样品制备方法。 C.然后冷却; 在1400〜1750℃的温度下将样品保持30分钟以上的样品热处理工序。 C.然后冷却; 以及用于评价样品热处理后的样品的不透明状态的样品评价方法。

23. 发明授权

US09157168B2 Vitreous silica crucible having transparent layer, bubble-containing layer, and semi-transparent layer in its wall, method of manufacturing the same, and method of manufacturing silicon ingot 有权
标题翻译：在其壁上具有透明层，含气泡层和半透明层的玻璃状石英坩埚，及其制造方法以及制造硅锭的方法
公开(公告)号：US09157168B2
公开(公告)日：2015-10-13
申请号：US13166189
申请日：2011-06-22
申请人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
发明人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
IPC分类号： C30B15/10 , C03B19/09 , C30B29/06 , C30B35/00
CPC分类号： C30B15/10 , C03B19/095 , C30B29/06 , C30B35/002 , Y10T117/1032
摘要： Provided is a vitreous silica crucible which can suppress inward sagging and buckling of the sidewall effectively even when time for pulling silicon ingots is extremely long. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein the crucible has a wall comprising, from an inner surface toward an outer surface of the crucible, a transparent vitreous silica layer having a bubble content rate of less than 0.5%, a bubble-containing vitreous silica layer having a bubble content rate of 1% or more and less than 50%, a semi-transparent vitreous silica layer having a bubble content rate of 0.5% or more and less than 1.0% and having an OH group concentration of 35 ppm or more and less than 300 ppm.
摘要翻译：本发明提供一种玻璃状石英坩埚，即使在硅锭的拉伸时间极长的情况下也能够有效地抑制侧壁的向下的下垂和翘曲。根据本发明，提供了一种用于拉制硅单晶的石英玻璃坩埚，其中坩埚具有从坩埚的内表面朝向外表面的包含具有气泡含量率的透明玻璃状二氧化硅层的壁小于0.5％的气泡含量为1％以上且小于50％的含气泡的玻璃状二氧化硅层，气泡含量率为0.5％以上且小于1.0％的半透明玻璃状石英层， OH基浓度为35ppm以上且小于300ppm。

24. 发明申请

US20120260852A1 VITREOUS SILICA CRUCIBLE 有权
标题翻译：紫外线可溶性
公开(公告)号：US20120260852A1
公开(公告)日：2012-10-18
申请号：US13148457
申请日：2010-12-13
申请人： Toshiaki Sudo , Hiroshi Kishi , Makiko Kodama
发明人： Toshiaki Sudo , Hiroshi Kishi , Makiko Kodama
IPC分类号： C30B15/10
CPC分类号： C30B35/002 , C03C19/00 , C03C23/0025 , C30B15/10 , Y10T117/1032
摘要： Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.
摘要翻译：本发明提供一种玻璃状石英玻璃坩埚，其特征在于，在单晶硅拉拔期间具有抑制熔融表面的振动的特殊区域，同时具有能够精确地监测经过特殊区域时的熔融面的变化位置的标记。用于防止硅熔体晃动的特殊区域设置在直体部分的内壁上，并且标记至少设置在特殊区域的上端和下端。

25. 发明授权

US08715415B2 Vitreous silica crucible for pulling silicon single crystal 有权
标题翻译：硅玻璃坩埚用于拉硅单晶
公开(公告)号：US08715415B2
公开(公告)日：2014-05-06
申请号：US12752374
申请日：2010-04-01
申请人： Makiko Kodama , Hiroshi Kishi , Minoru Kanda
发明人： Makiko Kodama , Hiroshi Kishi , Minoru Kanda
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C30B29/06 , C30B35/002
摘要： Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 μm is 10% or more and less than 30%, the content of bubbles having a diameter of 40 μm or more and less than 90 μm is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 μm is 10% or more and less than 30%. Relatively small bubbles contained in the opaque vitreous silica layer(11) contribute to the thermal conductivity of a crucible at an initial pulling stage, and relatively large bubbles contained in the opaque vitreous silica layer are expanded through a long-term pulling process to thereby largely contribute to the warmth retaining property of the crucible at a later pulling stage.
摘要翻译：本发明提供一种用于拉伸硅单晶的石英玻璃坩埚，其可以在短时间内熔化硅原料，并且通过不透明氧化硅玻璃层的时间变化提高硅单晶的产率。石英玻璃坩埚包括设置在其外表面并且包含多个气泡的不透明玻璃状石英层（11），以及设置在内表面上且基本上不含有气泡的透明玻璃状石英层（12）。不透明玻璃状石英层（11）具有气泡直径分布，其中直径小于40μm的气泡的含量为10％以上且小于30％，气泡的直径为40μm以上小于90μm的是40％以上且小于80％，直径等于或大于90μm的气泡的含量为10％以上且小于30％。包含在不透明玻璃状二氧化硅层（11）中的相对小的气泡有助于在初始拉伸阶段的坩埚的导热性，并且通过长期拉伸工艺使包含在不透明玻璃状二氧化硅层中的相对大的气泡膨胀，从而大大地扩大有助于在稍后的拉动阶段坩埚的保温性能。

26. 发明授权

US08142565B2 Vitreous silica crucible for pulling single-crystal silicon 有权
标题翻译：用于拉拔单晶硅的玻璃状硅石坩埚
公开(公告)号：US08142565B2
公开(公告)日：2012-03-27
申请号：US12325033
申请日：2008-11-28
申请人： Hiroshi Kishi , Minoru Kanda
发明人： Hiroshi Kishi , Minoru Kanda
IPC分类号： C30B15/10 , C30B15/00
CPC分类号： C30B15/10 , C30B29/06 , Y10S117/90 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052
摘要： A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range.
摘要翻译：一种玻璃状石英玻璃坩埚，其用于拉拔由玻璃状二氧化硅形成的具有有底圆筒形状的单晶硅，其中，在坩埚内表面的液面移动范围内，从对应于液面的位置在完成拉伸单晶硅时，将单晶硅拉出到对应于硅熔体的液面的位置时的硅熔体的水平，包括OH基的浓度坩埚的内表面的侵蚀厚度部分的玻璃态二氧化硅的含量高于低于位于液面移动范围以下的液面的范围。

27. 发明授权

US08286447B2 Method for producing quartz glass crucible 有权
标题翻译：生产石英玻璃坩埚的方法
公开(公告)号：US08286447B2
公开(公告)日：2012-10-16
申请号：US12169838
申请日：2008-07-09
申请人： Hiroshi Kishi , Minoru Kanda
发明人： Hiroshi Kishi , Minoru Kanda
IPC分类号： C03B19/01 , C03B19/06
CPC分类号： C03B19/095 , C30B15/10 , C30B35/002
摘要： A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles.
摘要翻译：通过电弧熔融装载在模具内侧的石英粉末成形体同时进行真空抽吸来制造石英玻璃坩埚的方法包括从石英粉末成型品的边缘开始熔融石英粉末，随后将电弧电极或提升模具以加热和熔化边缘边缘的下侧的部分。该方法优选进行，使得坩埚的内表面在从电弧熔化开始起的总电弧时间的10％的时间内密封，并且密封厚度为3mm以下。由此制造的石英玻璃坩埚可用于提升硅单晶，并且具有均匀的具有较少内部气泡的玻璃层。

28. 发明授权

US08163083B2 Silica glass crucible and method for pulling up silicon single crystal using the same 有权
标题翻译：二氧化硅玻璃坩埚和使用其同时提升硅单晶的方法
公开(公告)号：US08163083B2
公开(公告)日：2012-04-24
申请号：US12169828
申请日：2008-07-09
申请人： Hiroshi Kishi , Minoru Kanda
发明人： Hiroshi Kishi , Minoru Kanda
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B19/00 , C30B9/00 , C30B17/00 , C30B21/02 , C30B28/06
CPC分类号： C30B15/10 , C30B29/06 , Y10T117/1032
摘要： A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm2.
摘要翻译：通过使用二氧化硅将硅坩埚内表面的溶解速度抑制为20μm/小时以下，通过进行硅单晶的拉拔来防止针孔的方法来提供硅单晶中的针孔少的石英玻璃坩埚用于提取硅单晶的玻璃坩埚，其中由无定形二氧化硅结晶形成的结晶二氧化硅的面积限制在坩埚内表面积的10％以下，或坩埚内部由开放气泡形成的凹坑的密度表面限制在0.01〜0.2个/ mm2。

29. 发明授权

US08196430B2 Method and apparatus for manufacturing vitreous silica crucible 有权
标题翻译：石英玻璃坩埚的制造方法和装置
公开(公告)号：US08196430B2
公开(公告)日：2012-06-12
申请号：US12303994
申请日：2008-11-28
申请人： Hiroshi Kishi , Minoru Kanda , Masaki Morikawa
发明人： Hiroshi Kishi , Minoru Kanda , Masaki Morikawa
IPC分类号： C03B19/01 , C03B19/09 , C03B19/06
CPC分类号： C03B19/095 , C30B15/10 , Y02P40/57
摘要： A method of manufacturing a vitreous silica crucible by a rotary mold method, which includes performing arc melting in a state in which electrodes are provided so as to be shifted from a mold central line, wherein, by this eccentric arc, the glass temperature difference during melting of a straight body portion, a curved portion and a bottom of the crucible is controlled to 300° C. or below and the thickness of a transparent layer of the straight body portion and the bottom is controlled to 70 to 120% of the thickness of a transparent layer of the curved portion.
摘要翻译：一种通过旋转模具法制造石英玻璃坩埚的方法，其包括在设置电极以使其从模具中心线偏移的状态下进行电弧熔化，其中，通过该偏心弧，玻璃温度差在将坩埚的直体部分，弯曲部分和底部的熔化控制在300℃以下，直体部分和底部的透明层的厚度被控制在厚度的70〜120％的弯曲部分的透明层。

30. 发明申请

US20100244311A1 METHOD AND APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE 有权
标题翻译：用于制造维生素二氧化硅可溶性的方法和装置
公开(公告)号：US20100244311A1
公开(公告)日：2010-09-30
申请号：US12303994
申请日：2008-11-28
申请人： Hiroshi Kishi , Minoru Kanda , Masaki Morikawa
发明人： Hiroshi Kishi , Minoru Kanda , Masaki Morikawa
IPC分类号： C23C4/04 , C23C16/42
CPC分类号： C03B19/095 , C30B15/10 , Y02P40/57
摘要： A method of manufacturing a vitreous silica crucible by a rotary mold method, which includes performing arc melting in a state in which electrodes are provided so as to be shifted from a mold central line, wherein, by this eccentric arc, the glass temperature difference during melting of a straight body portion, a curved portion and a bottom of the crucible is controlled to 300° C. or below and the thickness of a transparent layer of the straight body portion and the bottom is controlled to 70 to 120% of the thickness of a transparent layer of the curved portion.
摘要翻译：一种通过旋转模具法制造石英玻璃坩埚的方法，其包括在设置电极以使其从模具中心线偏移的状态下进行电弧熔化，其中，通过该偏心弧，玻璃温度差在将坩埚的直体部分，弯曲部分和底部的熔化控制在300℃以下，直体部分和底部的透明层的厚度被控制在厚度的70〜120％的弯曲部分的透明层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式