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21. 发明授权

US07002132B2 Photocathode, electron tube, and method of assembling photocathode 有权
标题翻译：光电阴极，电子管和组装光电阴极的方法
公开(公告)号：US07002132B2
公开(公告)日：2006-02-21
申请号：US10704695
申请日：2003-11-12
申请人： Yasuharu Negi , Yasuyuki Egawa , Toru Hirohata , Minoru Niigaki
发明人： Yasuharu Negi , Yasuyuki Egawa , Toru Hirohata , Minoru Niigaki
IPC分类号： H01J40/14
CPC分类号： H01J43/28 , H01J43/08
摘要： The invention relates to a photocathode and the like having such structure for holding a photocathode plate on a light transparent member with good reliability and workability. In the photocathode, claw portions of a holding member fixed to the light transparent member is pressed against the lower surface of a supporting plate so that a photocathode plate is sandwiched between the light transparent member and the supporting plate. Thus, the supporting plate is pressed against the photocathode plate, so that the photocathode plate is pressed against the light transparent plate by the supporting plate. This allows the photocathode plate to be held reliably by the light transparent member. This simple configuration further provides good workability in assembling.
摘要翻译：本发明涉及一种具有这样的结构的光电阴极等，该光电阴极等具有良好的可靠性和可加工性的将光电面板保持在透光构件上。在光电阴极中，固定在透光构件上的保持构件的爪部被压靠在支撑板的下表面上，使得光电阴极板夹在透光构件和支撑板之间。因此，支撑板被压在光电阴极板上，使得光电阴极板通过支撑板压靠在透光板上。这允许光电阴极板被透光构件可靠地保持。这种简单的配置进一步提供了良好的组装可操作性。

22. 发明授权

US06917058B2 Semiconductor photocathode 有权
标题翻译：半导体光电阴极
公开(公告)号：US06917058B2
公开(公告)日：2005-07-12
申请号：US10433060
申请日：2001-12-18
申请人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Kuniyoshi Mori
发明人： Minoru Niigaki , Toru Hirohata , Hirofumi Kan , Kuniyoshi Mori
IPC分类号： H01J1/34 , H01J29/38 , H01J31/50 , H01J40/06 , H01L29/24
CPC分类号： H01J1/34 , H01J2201/3423
摘要： In the case of a thick light-absorbing layer 2, a phenomenon of a decrease in the time resolution occurs. However, when the thickness of the light-absorbing layer 2 is limited, a portion of low electron concentration in one electron group is cut out, and hence overlap regions of adjacent electron concentration distributions decrease. Therefore, by shortening the transit time necessary for the passage of electrons, regions of overlapping electron distributions due to diffusion can also be suppressed. Furthermore, the strength of an electric field within a light-absorbing layer can be increased by thinning the light-absorbing layer. Therefore, the time resolution of infrared rays can be remarkably improved by a synergistic action of these effects. If it is assumed that the time resolution is 40 ps (picoseconds), for example, when the thickness of a light-absorbing layer is 1.3 μm which is nearly equal to the wavelength of infrared, then a possible time resolution is 7.5 ps when this thickness is 0.19 μm.
摘要翻译：在厚光吸收层2的情况下，会发生时间分辨率降低的现象。然而，当光吸收层2的厚度受限时，一个电子组中的低电子浓度部分被切掉，因此相邻电子浓度分布的重叠区域减小。因此，通过缩短电子通过所需的通行时间，也可以抑制由扩散引起的重叠电子分布的区域。此外，可以通过使光吸收层变薄来增加光吸收层内的电场强度。因此，通过这些效果的协同作用，可以显着提高红外线的时间分辨率。如果假设时间分辨率为40ps（皮秒），例如，当光吸收层的厚度为1.3μm，几乎等于红外线的波长时，则当这样的时间分辨率为7.5ps时厚度为0.19毫米。

23. 发明授权

US5138191A Photoemitter 失效
标题翻译：摄影师
公开(公告)号：US5138191A
公开(公告)日：1992-08-11
申请号：US546753
申请日：1990-07-02
申请人： Yoshihiko Mizushima , Toru Hirohata , Tsuneo Ihara , Minoru Niigaki , Kenichi Sugimoto , Koichiro Oba , Toshihiro Suzuki , Tomoko Suzuki
发明人： Yoshihiko Mizushima , Toru Hirohata , Tsuneo Ihara , Minoru Niigaki , Kenichi Sugimoto , Koichiro Oba , Toshihiro Suzuki , Tomoko Suzuki
IPC分类号： G01J1/02 , H01J1/30 , H01J1/308 , H01J1/34 , H01J29/38 , H01J29/45 , H04N5/33
CPC分类号： H01J1/308 , H01J1/34 , H01J2201/3423
摘要： A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.
摘要翻译：在导电电极和半导体之间形成诸如肖特基结的结。在导电电极与形成在半导体的与该结的相反侧的外侧发射侧电极之间施加偏置电压。在照射时，光电子在导电电极内部发射到半导体中，通过半导体传输，并从半导体表面向外发射，半导体表面已被如此处理以减小表面势垒高度。半导体是半绝缘的，或者在其中形成p-n结。

24. 发明授权

US08482197B2 Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube 有权
标题翻译：光电阴极，电子管，场辅助型光电阴极，场辅助型光电阴极阵列和场辅助型电子管
公开(公告)号：US08482197B2
公开(公告)日：2013-07-09
申请号：US11819599
申请日：2007-06-28
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01J40/06
CPC分类号： H01J40/06 , H01J31/48
摘要： When light is incident to an antenna layer AA6 of a photocathode AA1, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AA6 whereupon near-field light is outputted from a through hole AA14. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA4. The photoelectric conversion layer AA4 receives the near-field light outputted from the through hole AA14. A region of the photoelectric conversion layer AA4 around the through hole AA14 absorbs the near-field light and generates photoelectrons (e−) in an amount according to the intensity of the near-field light. The photoelectrons (e−) generated in the photoelectric conversion layer AA4 are outputted to the outside.
摘要翻译：当光入射到光电阴极AA1的天线层AA6时，包括在入射光中的特定波长的光与天线层AA6中的表面等离子体激元耦合，从而从通孔AA14输出近场光。输出近场光的强度与特定波长的光的强度成比例并且大于特定波长的光的强度。输出的近场光具有可以在光电转换层AA4中吸收的波长。光电转换层AA4接收从通孔AA14输出的近场光。通孔AA14周围的光电转换层AA4的区域吸收近场光，并以与近场光强度相对应的量产生光电子（e-）。在光电转换层AA4中产生的光电子（e-）被输出到外部。

25. 发明授权

US08446094B2 Photocathode, electron tube, field assist type photocathode, field assist type photocathode array, and field assist type electron tube 有权
公开(公告)号：US08446094B2
公开(公告)日：2013-05-21
申请号：US12712546
申请日：2010-02-25
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01J40/06
CPC分类号： H01J40/06 , H01J31/48
摘要： When light is incident to an antenna layer AA6 of a photocathode AA1, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AA6 whereupon near-field light is outputted from a through hole AA14. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA4. The photoelectric conversion layer AA4 receives the near-field light outputted from the through hole AA14. A region of the photoelectric conversion layer AA4 around the through hole AA14 absorbs the near-field light and generates photoelectrons (e−) in an amount according to the intensity of the near-field light. The photoelectrons (e−) generated in the photoelectric conversion layer AA4 are outputted to the outside.

26. 发明授权

US07795608B2 Photocathode 有权
标题翻译：光电阴极
公开(公告)号：US07795608B2
公开(公告)日：2010-09-14
申请号：US12177914
申请日：2008-07-23
申请人： Toru Hirohata , Minoru Niigaki
发明人： Toru Hirohata , Minoru Niigaki
IPC分类号： H01L29/12
CPC分类号： H01J1/34 , H01J40/06
摘要： When to-be-detected light is made incident from a support substrate 2 side of a photocathode E1, a light absorbing layer 3 absorbs this to-be-detected light and produces photoelectrons. However, depending on the thickness and the like of the light absorbing layer 3, the to-be-detected light can be transmitted through the light absorbing layer 3 without being sufficiently absorbed by the light absorbing layer 3. The to-be-detected light transmitted through the light absorbing layer 3 reaches an electron emitting layer 4. A part of the to-be-detected light that has reached the electron emitting layer 4 proceeds toward a through-hole 5a of a contact layer 5. Since the length d1 of a diagonal line of the through-hole 5a is shorter than the wavelength of the to-be-detected light, the to-be-detected light can be suppressed from passing through the through-hole 5a and being emitted to the exterior. The to-be-detected light suppressed from being externally emitted is reflected on the exposed surface of the electron emitting layer 4 and is again made incident into the light absorbing layer 3 to be absorbed. Thereby, a photocathode excellent in light detection sensitivity is realized.
摘要翻译：当从光电阴极E1的支撑基板2侧入射待检测的光时，光吸收层3吸收该被检测光并产生光电子。然而，根据光吸收层3的厚度等，待检测光可以透过光吸收层3而不被光吸收层3充分吸收。待检测的光通过光吸收层3透射的光到达电子发射层4.到达电子发射层4的被检测光的一部分朝向接触层5的通孔5a前进。由于长度d1 通孔5a的对角线比待检测光的波长短，可以抑制被检测光穿过通孔5a并被发射到外部。被外部发射抑制的被检测光被反射在电子发射层4的暴露表面上，并再次入射到光吸收层3中以被吸收。由此，实现了光检测灵敏度优异的光电阴极。

27. 发明申请

US20080121928A1 Semiconductor photocathode 审中-公开
标题翻译：半导体光电阴极
公开(公告)号：US20080121928A1
公开(公告)日：2008-05-29
申请号：US11987216
申请日：2007-11-28
申请人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
发明人： Minoru Niigaki , Kazutoshi Nakajima , Toru Hirohata , Hirofumi Kan
IPC分类号： H01L31/0336
CPC分类号： H01L31/1035 , H01L31/0735 , Y02E10/544
摘要： A semiconductor photocathode has first and second III-V compound semiconductor layers doped with a p-type impurity and joined to each other to make a heterojunction. The second III-V compound semiconductor layer functions as a light absorbing layer, an energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer, and Be or C is used as the p-type dopant in each semiconductor layer. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体光电阴极具有掺杂有p型杂质并且彼此接合以形成异质结的第一和第二III-V族化合物半导体层。第二III-V族化合物半导体层用作光吸收层，第二III-V族化合物半导体层的能隙小于第一III-V族化合物半导体层的能隙，使用Be或C作为p 型掺杂剂。此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

28. 发明申请

US20080121909A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080121909A1
公开(公告)日：2008-05-29
申请号：US11987215
申请日：2007-11-28
申请人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Kazutoshi Nakajima , Hirofumi Kan
IPC分类号： H01L33/00 , H01L31/0336
CPC分类号： H01L33/30 , H01L31/03046 , H01L31/1035 , H01L33/02 , H01L33/025 , H01L33/305 , Y02E10/544
摘要： A semiconductor device has first and second III-V compound semiconductor layers one of which functions as a photosensitive layer or as a light emitting layer, which are doped with a p-type impurity in a low concentration, and which are joined to each other to make a heterojunction. An energy gap of the second III-V compound semiconductor layer is smaller than that of the first III-V compound semiconductor layer and the p-type dopant in each semiconductor layer is Be or C. At this time, the second III-V compound semiconductor layer may be deposited on the first III-V compound semiconductor layer. The first III-V compound semiconductor layer and the second III-V compound semiconductor layer may contain at least one from each group of (In, Ga, Al) and (As, P, N).
摘要翻译：半导体器件具有第一和第二III-V族化合物半导体层，其中一个作为感光层或作为发光层，其以低浓度掺杂有p型杂质，并且彼此接合，做异质结。第二III-V族化合物半导体层的能隙比第一III-V族化合物半导体层的能隙小，在各半导体层中的p型掺杂剂为Be或C.此时，第二III-V族化合物半导体层可以沉积在第一III-V族化合物半导体层上。第一III-V族化合物半导体层和第二III-V族化合物半导体层可以含有（In，Ga，Al）和（As，P，N）中的至少一种。

29. 发明申请

US20090273281A1 PHOTOCATHODE AND ELECTRON TUBE HAVING THE SAME 审中-公开
标题翻译：具有相同的光电管和电子管
公开(公告)号：US20090273281A1
公开(公告)日：2009-11-05
申请号：US12432850
申请日：2009-04-30
申请人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
IPC分类号： H01J40/06 , H01L29/12
CPC分类号： H01J31/50 , H01J1/34 , H01J40/06 , H01J2231/5001
摘要： The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X
摘要翻译：本发明的光电阴极设置有由单晶化合物半导体构成的支撑基板，形成在支撑基板上的光吸收层，并且与支撑基板相比能量带隙更小，以吸收透过该基板的入射光支撑基板，从而产生光电子;以及表面层，其形成在光吸收层上以降低光吸收层的功函数，其中支撑衬底包括Al（1-x）GaxN（0≤x≤1 ），并且光吸收层包括由选自Al，Ga和In以及N中的至少一种材料构成的化合物半导体。

30. 发明申请

US20080042563A1 Photocathode, electron tube, field assist type photocathode, field asist type photocathode array, and field asist type electron tube 有权
标题翻译：光电阴极，电子管，场辅助型光电阴极，场一类光电阴极阵列，以及场asist型电子管
公开(公告)号：US20080042563A1
公开(公告)日：2008-02-21
申请号：US11819599
申请日：2007-06-28
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01J40/06
CPC分类号： H01J40/06 , H01J31/48
摘要： When light is incident to an antenna layer AA6 of a photocathode AA1, light of a specific wavelength included in the incident light couples with surface plasmons in the antenna layer AA6 whereupon near-field light is outputted from a through hole AA14. The intensity of the output near-field light is proportional to and greater than the intensity of the light of the specific wavelength. The output near-field light has a wavelength that can be absorbed in a photoelectric conversion layer AA4. The photoelectric conversion layer AA4 receives the near-field light outputted from the through hole AA14. A region of the photoelectric conversion layer AA4 around the through hole AA14 absorbs the near-field light and generates photoelectrons (e−) in an amount according to the intensity of the near-field light. The photoelectrons (e−) generated in the photoelectric conversion layer AA4 are outputted to the outside.
摘要翻译：当光入射到光电阴极AA 1的天线层AA 6时，包括在入射光中的特定波长的光与天线层AA 6中的表面等离子体激元耦合，从而从通孔AA 14输出近场光。输出近场光的强度与特定波长的光的强度成比例并且大于特定波长的光的强度。输出的近场光具有可以在光电转换层AA 4中吸收的波长。光电转换层AA4接收从通孔AA14输出的近场光。通孔AA14周围的光电转换层AA4的区域吸收近场光，并以与近场光强度相对应的量生成光电子（e ^{）。在光电转换层AA4中产生的光电子（e - SUP）被输出到外部。}

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