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    • 21. 发明申请
    • Method for manufacturing solid-state imaging device
    • 固态成像装置的制造方法
    • US20050186695A1
    • 2005-08-25
    • US11049029
    • 2005-02-01
    • Tohru Yamada
    • Tohru Yamada
    • H01L27/14H01L27/148H01L29/768
    • H01L27/14689H01L27/14687H01L27/14806H01L31/03529
    • First, a first gate insulating film is formed in a region where a charge transfer portion is to be formed on a semiconductor substrate, and a protective film is formed on the first gate insulating film. A photoresist for transfer channel formation is formed on the protective film, and then a part of the photoresist for the transfer channel formation is removed by patterning. Next, an impurity is ion-implanted using the photoresist for the transfer channel formation as a mask, so as to form a transfer channel below the first gate insulating film. Subsequently, the photoresist for the transfer channel formation is removed, and the second gate insulating film is formed on the protective film. Thereafter, a transfer electrode is formed.
    • 首先,在半导体衬底上形成电荷转移部分的区域中形成第一栅极绝缘膜,并在第一栅极绝缘膜上形成保护膜。 在保护膜上形成用于转移通道形成的光致抗蚀剂,然后通过图案化去除用于转移通道形成的光致抗蚀剂的一部分。 接下来,使用用于传输沟道形成的光致抗蚀剂离子注入杂质作为掩模,以在第一栅极绝缘膜下方形成传输沟道。 随后,去除用于转移通道形成的光致抗蚀剂,并且在保护膜上形成第二栅极绝缘膜。 之后,形成转印电极。
    • 30. 发明授权
    • Solid state imaging device and method of manufacturing the same
    • 固态成像装置及其制造方法
    • US07906824B2
    • 2011-03-15
    • US12416506
    • 2009-04-01
    • Ikuo MizunoTohru Yamada
    • Ikuo MizunoTohru Yamada
    • H01L27/14
    • H01L27/14818
    • A solid state imaging device has a plurality of photodetector parts 11 arranged in matrix, a plurality of vertical charge transfer electrodes 13 that read out signal charge from the photodetector parts and transfer the signal charge in the vertical direction, and a first light-shielding film 5 that shields the plural vertical charge transfer parts from incident light. Each of the vertical charge transfer electrodes includes: a transfer channel 12 provided along the vertical array of the plural photodetector parts, a plurality of first transfer electrodes 3a that are formed on the transfer channel so as to traverse the transfer channel and that is coupled in the horizontal direction in spacing between the photodetector parts; and second transfer electrodes 3b provided on the transfer channel and arranged between the first transfer electrodes. The first light-shielding film is formed continuously in the horizontal direction and has openings formed on the photodetector parts. Isolation regions having electroconductivity are formed between the photodetector parts and connected electrically to the second transfer electrode. Thereby, a shunt wiring structure capable of a high-speed transfer at a high sensitivity and with reduced smearing is obtained.
    • 固态成像装置具有多个以矩阵形式布置的光电检测器部分11,多个垂直电荷转移电极13,其从光电检测器部分读出信号电荷并在垂直方向上传送信号电荷;以及第一遮光膜 5从入射光屏蔽多个垂直电荷转移部分。 每个垂直电荷转移电极包括:沿着多个光电检测器部分的垂直阵列设置的传输通道12,多个第一传输电极3a,其形成在传送通道上,以穿过传输通道并耦合在 光电检测器部分之间的间隔的水平方向; 以及设置在传送通道上并布置在第一传输电极之间的第二传输电极3b。 第一遮光膜在水平方向上连续地形成并且在光电检测器部分上形成有开口。 在光检测器部分之间形成具有导电性的隔离区,并与第二转印电极电连接。 由此,可以获得能够以高灵敏度高速转印并且减少拖尾的并联布线结构。