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21. 发明授权

US07163588B2 Processing a workpiece using water, a base, and ozone 失效
标题翻译：使用水，碱和臭氧处理工件
公开(公告)号：US07163588B2
公开(公告)日：2007-01-16
申请号：US11005495
申请日：2004-12-06
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： B08B3/00 , B08B3/04 , B08B3/10
CPC分类号： H01L21/02054 , B08B3/00 , B08B3/02 , B08B3/044 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2203/007 , B08B2230/01 , H01L21/02052 , H01L21/6704 , H01L21/67051 , Y10S134/902
摘要： Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered into a stream of process liquid or into the process environment or chamber. Steam may alternatively be used. A layer of liquid or vapor forms on the wafer surface. The ozone moves through the liquid layer via diffusion, entrainment, jetting/spraying or bulk transfer, and chemically reacts with the photoresist, to remove it.
摘要翻译：使用水，臭氧和碱如氢氧化铵，从具有金属特征的晶片快速除去诸如光致抗蚀剂的污染物。在室温下进行加工以避免金属腐蚀。臭氧被输送到过程液体流中或进入过程环境或室。也可以使用蒸汽。在晶片表面上形成一层液体或蒸气。臭氧通过扩散，夹带，喷射/喷涂或大量转移而流过液体层，并与光致抗蚀剂发生化学反应，以除去它。

22. 发明授权

US06869486B2 Methods for removing metallic contamination from wafer containers 有权
标题翻译：从晶圆容器中除去金属污染物的方法
公开(公告)号：US06869486B2
公开(公告)日：2005-03-22
申请号：US10692829
申请日：2003-10-23
申请人： Ronald G. Breese , C. James Bryer , Eric J. Bergman , Dana R. Scranton
发明人： Ronald G. Breese , C. James Bryer , Eric J. Bergman , Dana R. Scranton
IPC分类号： B08B3/12 , B08B9/08 , B08B9/32 , H01L21/00 , B08B3/08 , B08B3/10 , B08B9/093
CPC分类号： H01L21/67051 , B08B9/0861 , B08B9/32 , Y10S134/902
摘要： In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.
摘要翻译：在清洁金属离子污染物（特别是铜）的清洁方法中，容器被装载到清洁装置中。用稀释的螯合剂溶液喷洒容器。螯合剂溶液从容器中除去金属污染物。然后用漂洗液如去离子水和表面活性剂漂洗容器。然后将容器干燥，优选通过施加热和/或热空气运动。

23. 发明授权

US06843857B2 Methods for cleaning semiconductor surfaces 有权
标题翻译：清洁半导体表面的方法
公开(公告)号：US06843857B2
公开(公告)日：2005-01-18
申请号：US10681553
申请日：2003-10-07
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： B08B3/08 , B08B7/00 , H01L21/02 , H01L21/306 , B08B3/00
CPC分类号： H01L21/02054 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2230/01 , Y10S134/902 , Y10S438/906
摘要： The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.
摘要翻译：本发明包括用于清洁晶片或其它半导体产品表面的方法。使用被润湿到表面上的氧化溶液进行氧化。氧化溶液可以包括水，臭氧，氯化氢，硫酸或过氧化氢中的一种或多种。漂洗步骤除去氧化溶液并抑制进一步的活性。此后，漂洗后的表面优选进行干燥步骤。将表面暴露于氧化物去除蒸气以从其中除去半导体氧化物。氧化物去除蒸气可以包括一种或多种：酸，例如卤化氢，例如氟化氢或氯化氢; 水; 异丙醇或臭氧。这些工艺可以使用离心加工和喷涂动作。

24. 发明授权

US06837252B2 Apparatus for treating a workpiece with steam and ozone 有权
标题翻译：用蒸汽和臭氧处理工件的设备
公开(公告)号：US06837252B2
公开(公告)日：2005-01-04
申请号：US10418695
申请日：2003-04-18
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： B08B3/00 , B08B3/02 , B08B3/04 , B08B3/08 , B08B7/00 , H01L21/00 , H01L21/02 , H01L21/306 , H01L21/3065 , H01L23/495 , H05K3/34 , B08B3/10
CPC分类号： H01L21/02054 , B08B3/00 , B08B3/02 , B08B3/044 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2203/007 , B08B2230/01 , H01L21/02052 , H01L21/3065 , H01L21/6704 , H01L21/67051 , H01L23/49582 , H01L2924/0002 , H05K3/3426 , Y02P70/613 , Y10S134/902 , H01L2924/00
摘要： In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.
摘要翻译：在用于处理工件以从工件的第一表面去除材料的方法中，在条件下将蒸汽引入到第一表面上，使得至少一些蒸汽在第一表面上冷凝并形成液体边界层。冷凝蒸汽有助于在升高的温度下保持工件的第一表面。在臭氧扩散通过边界层并与第一表面上的材料反应的条件下，在工件周围设置臭氧。控制第一表面的温度以保持蒸汽的冷凝。

25. 发明授权

US06830628B2 Methods for cleaning semiconductor surfaces 有权
标题翻译：清洁半导体表面的方法
公开(公告)号：US06830628B2
公开(公告)日：2004-12-14
申请号：US09811925
申请日：2001-03-19
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： B08B304
CPC分类号： H01L21/02054 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2230/01 , Y10S134/902 , Y10S438/906
摘要： The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.
摘要翻译：本发明包括用于清洁晶片或其它半导体产品表面的方法。使用被润湿到表面上的氧化溶液进行氧化。氧化溶液可以包括水，臭氧，氯化氢，硫酸或过氧化氢中的一种或多种。漂洗步骤除去氧化溶液并抑制进一步的活性。此后，漂洗后的表面优选进行干燥步骤。将表面暴露于氧化物去除蒸气以从其中除去半导体氧化物。氧化物去除蒸气可以包括一种或多种：酸，例如卤化氢，例如氟化氢或氯化氢; 水; 异丙醇或臭氧。这些工艺可以使用离心加工和喷涂动作。

26. 发明授权

US06746565B1 Semiconductor processor with wafer face protection 失效
标题翻译：具有晶片面保护的半导体处理器
公开(公告)号：US06746565B1
公开(公告)日：2004-06-08
申请号：US09478870
申请日：2000-01-07
申请人： Martin C. Bleck , Timothy J. Reardon , Eric J. Bergman
发明人： Martin C. Bleck , Timothy J. Reardon , Eric J. Bergman
IPC分类号： C23F100
CPC分类号： H01L21/68792 , H01L21/67075 , H01L21/67086
摘要： A semiconductor processing station which utilizes a processing head and processing base which are complementary to enclose a processing chamber. The processing head shown has a rotor with two portions both of which rotate. The rotor has axial movable portions which include a piece holder. The piece holder supports a wafer or other semiconductor piece being processed. The piece holder can be axially extended and retracted relative to a thin membrane which acts as a cover to prevent chemicals from reaching the back side of the wafer during processing.
摘要翻译：一种半导体处理站，其利用互补的处理头和处理基底来包围处理室。所示的处理头具有转子，其中两个部分都转动。转子具有轴向可移动部分，其包括片夹。片保持器支撑正在处理的晶片或其它半导体片。片保持器可相对于用作盖的薄膜轴向延伸和缩回，以防止化学品在加工期间到达晶片的背面。

27. 发明授权

US06701941B1 Method for treating the surface of a workpiece 有权
标题翻译：处理工件表面的方法
公开(公告)号：US06701941B1
公开(公告)日：2004-03-09
申请号：US09536251
申请日：2000-03-27
申请人： Eric J. Bergman , Mignon P. Hess
发明人： Eric J. Bergman , Mignon P. Hess
IPC分类号： B08B302
CPC分类号： H01L21/02054 , B08B3/02 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2230/01 , H01L21/02052 , H01L21/6704 , Y10S134/902
摘要： An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.
摘要翻译：提供了一种用于提供处理液和臭氧的混合物用于处理工件表面的设备以及相应的方法。该装置的优选实施例包括液体供应管线，其用于在容纳处理液体的容器和容纳工件的处理室之间提供流体连通。设置加热器以直接或间接地加热工件。优选地，通过加热供给到工件的处理液来加热工件。一个或多个喷嘴接受来自液体供应管线的处理液并将其喷射到工件的表面上，同时臭氧发生器将臭氧加入到包含工件的环境中。

28. 发明授权

US06273108B1 Apparatus and method for processing the surface of a workpiece with ozone 失效
标题翻译：用臭氧处理工件表面的设备和方法
公开(公告)号：US06273108B1
公开(公告)日：2001-08-14
申请号：US09677929
申请日：2000-10-03
申请人： Eric J. Bergman , Mignon P. Hess
发明人： Eric J. Bergman , Mignon P. Hess
IPC分类号： B08B302
CPC分类号： H01L21/02054 , B08B3/02 , B08B3/08 , B08B7/00 , B08B2203/005 , B08B2230/01 , H01L21/02052 , H01L21/6704 , Y10S134/902
摘要： An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.
摘要翻译：提供了一种用于提供处理液和臭氧的混合物用于处理工件表面的设备以及相应的方法。该装置的优选实施例包括液体供应管线，其用于在容纳处理液体的容器和容纳工件的处理室之间提供流体连通。设置加热器以直接或间接地加热工件。优选地，通过加热供给到工件的处理液来加热工件。一个或多个喷嘴接受来自液体供应管线的处理液并将其喷射到工件的表面上，同时臭氧发生器将臭氧加入到包含工件的环境中。

29. 发明授权

US6022484A Semiconductor processor with wafer face protection 失效
标题翻译：具有晶片面保护的半导体处理器
公开(公告)号：US6022484A
公开(公告)日：2000-02-08
申请号：US46808
申请日：1998-03-23
申请人： Martin C. Bleck , Timothy J. Reardon , Eric J. Bergman
发明人： Martin C. Bleck , Timothy J. Reardon , Eric J. Bergman
IPC分类号： H01L21/00 , H01L21/687 , B44C1/22
CPC分类号： H01L21/68785 , H01L21/67075 , H01L21/67086
摘要： A semiconductor processing station which utilizes a processing head and processing base which are complementary to enclose a processing chamber. The processing head shown has a rotor with two portions both of which rotate. The rotor has axial movable portions which include a piece holder. The piece holder supports a wafer or other semiconductor piece being processed. The piece holder can be axially extended and retracted relative to a thin membrane which acts as a cover to prevent chemicals from reaching the back side of the wafer during processing.
摘要翻译：一种半导体处理站，其利用互补的处理头和处理基底来包围处理室。所示的处理头具有转子，其中两个部分都转动。转子具有轴向可移动部分，其包括片夹。片保持器支撑正在处理的晶片或其它半导体片。片保持器可相对于用作盖的薄膜轴向延伸和缩回，以防止化学品在加工期间到达晶片的背面。

30. 发明授权

US5500081A Dynamic semiconductor wafer processing using homogeneous chemical vapors 失效
标题翻译：使用均匀化学蒸气的动态半导体晶片处理
公开(公告)号：US5500081A
公开(公告)日：1996-03-19
申请号：US349691
申请日：1994-12-05
申请人： Eric J. Bergman
发明人： Eric J. Bergman
IPC分类号： G11B7/26 , H01L21/00
CPC分类号： H01L21/67075 , H01L21/67023 , G11B7/26 , Y10S438/935 , Y10S438/973
摘要： Disclosed is a method for improved processing of semiconductor wafers and the like using processing chemicals, particularly hydrofluoric acid (HF) and water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which are preferably recirculated, mixed and agitated. The liquid phase is advantageously circulated through a chemical chamber within the processing bowl. Exposure of wafers to vapors from the chemical chamber can be controlled by a vapor control valve which is advantageously the bottom of the processing chamber. The wafer is rotated or otherwise moved within the processing chamber to provide uniform dispersion of the homogeneous reactant vapors across the wafer surface and to facilitate vapor circulation to the processed surface. A radiative volatilization processor can be utilized to volatilize reaction by-products which form under some conditions. The processes provide efficient uniform etching with low particle count performance.
摘要翻译：公开了使用加工化学品，特别是氢氟酸（HF）和水混合物来改进半导体晶片等的处理方法。均匀的蒸汽混合物是从均匀的液相混合物产生的，其优选是循环的，混合的和搅拌的。液相有利地循环通过加工碗内的化学室。晶片从化学室暴露于蒸气可以通过有利地处理室底部的蒸汽控制阀来控制。晶片在处理室内旋转或以其它方式移动，以提供均匀反应物蒸汽在晶片表面上的均匀分散，并促进蒸气循环到经处理的表面。辐射挥发处理器可用于挥发在一些条件下形成的反应副产物。该工艺提供了具有低粒度计数性能的有效的均匀蚀刻。

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