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21. 发明授权

US5136438A Magnetic disk device having an auto-loading mechanism and a dust collecting mechanism 失效
标题翻译：具有自动装载机构和集尘机构的磁盘装置
公开(公告)号：US5136438A
公开(公告)日：1992-08-04
申请号：US550686
申请日：1990-07-10
申请人： Koosaku Wakatsuki , Shoji Suzuki , Noriaki Okamoto , Yuzo Yamaguchi , Katsuaki Kikuchi , Mikio Tokuyama , Yoshinori Takeuchi , Yoshihiko Miyake
发明人： Koosaku Wakatsuki , Shoji Suzuki , Noriaki Okamoto , Yuzo Yamaguchi , Katsuaki Kikuchi , Mikio Tokuyama , Yoshinori Takeuchi , Yoshihiko Miyake
IPC分类号： G11B5/48 , G11B5/54 , G11B5/55 , G11B5/60 , G11B21/12 , G11B21/21 , G11B25/04 , G11B33/14
CPC分类号： G11B5/6005 , G11B25/043 , G11B33/1446 , G11B5/4833 , G11B5/54 , G11B5/5565
摘要： A magnetic head device has a magnetic head slider by means of which information is recorded in and read from a magnetic recording medium. The magnetic head slider is supported by a supporting structure having an internal cavity, an opening formed in a portion of the structure where the magnetic head slider faces the magnetic recording medium and communicating with the internal cavity, and a gas passage through which the gas introduced into the internal cavity through the opening is discharged to the exterior of the internal cavity. With this arrangement, the pressure acting on the back surface of the magnetic head slider is adjusted to keep the slider afloat, while removing dust suspended in the gas around the recording medium and the supporting structure.
摘要翻译：磁头装置具有磁头滑块，通过该磁头滑块将信息记录在磁记录介质中并从磁记录介质读取。磁头滑块由具有内部空腔的支撑结构支撑，形成在结构的一部分中的磁头滑块面向磁记录介质并与内部空腔连通的开口以及气体引入的气体通道通过开口进入内腔，排出到内腔外部。通过这种布置，调节作用在磁头滑块的后表面上的压力，以保持滑块浮动，同时除去悬挂在记录介质和支撑结构周围的气体中的灰尘。

22. 发明授权

US5060098A Magnetic recorder provided with a magnetic head slider having a non-magnetic oxide of spinel structure 失效
标题翻译：磁记录器设置有具有尖晶石结构的非磁性氧化物的磁头滑块
公开(公告)号：US5060098A
公开(公告)日：1991-10-22
申请号：US339490
申请日：1989-04-17
申请人： Akihiro Gotoh , Shinsuke Higuchi , Takeshi Miyazaki , Kunihiro Maeda , Yokuo Saitoh , Toyoji Okuwaki , Noriaki Okamoto , Kousaku Wakatsuki
发明人： Akihiro Gotoh , Shinsuke Higuchi , Takeshi Miyazaki , Kunihiro Maeda , Yokuo Saitoh , Toyoji Okuwaki , Noriaki Okamoto , Kousaku Wakatsuki
IPC分类号： G11B5/31 , G11B5/60
CPC分类号： G11B5/6005 , G11B5/3106
摘要： The present invention provides; a magnetic disk recorder comprising (i) magnetic disks having magnetic recording media, (ii) thin-film magnetic heads for recording information in the recording media and reproducing information therefrom, and (iii) a carriage for moving the magnetic heads to intended positions, the recorder being wherein the thin-film magnetic heads are formed on sliders and these sliders comprise sintered bodies containing a non-magnetic metal oxide of spinel structure and harder ceramic particles than the metal oxide which are dispersed in the metal oxide; a sintered body useful particularly as a material for the magnetic head slider, a method for making the sintered body, and a magnetic head and a magnetic head slider, for recording and reproducing information, which are made by using the sintered body.
摘要翻译：本发明提供：一种磁盘记录器，包括（i）具有磁记录介质的磁盘，（ii）用于在记录介质中记录信息并从其再现信息的薄膜磁头，以及（iii）用于将磁头移动到预期位置的托架，所述记录器是其中所述薄膜磁头形成在滑块上，并且这些滑动件包括烧结体，该烧结体包含尖晶石结构的非磁性金属氧化物和比分散在金属氧化物中的金属氧化物更硬的陶瓷颗粒; 特别是用作磁头滑块的材料的烧结体，用于制造烧结体的方法以及用于记录和再现信息的磁头和磁头滑块，其通过使用烧结体制成。

23. 发明授权

US07442593B2 Method of manufacturing semiconductor device having conductive thin films 失效
标题翻译：制造具有导电薄膜的半导体器件的方法
公开(公告)号：US07442593B2
公开(公告)日：2008-10-28
申请号：US11480912
申请日：2006-07-06
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：在半导体衬底4上的氧化硅膜5上通过氧化硅膜5形成电极2时，例如，栅电极2被构成为多个多晶硅层6的叠层结构。栅电极2的部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

24. 发明授权

US07091520B2 Method of manufacturing semiconductor device having conductive thin films 失效
标题翻译：制造具有导电薄膜的半导体器件的方法
公开(公告)号：US07091520B2
公开(公告)日：2006-08-15
申请号：US10265105
申请日：2002-10-07
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L29/10
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：在半导体衬底4上的氧化硅膜5上通过氧化硅膜5形成电极2时，例如，栅电极2被构成为多个多晶硅层6的叠层结构。栅电极2的部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

25. 发明授权

US06346731B1 Semiconductor apparatus having conductive thin films 有权
标题翻译：具有导电薄膜的半导体装置
公开(公告)号：US06346731B1
公开(公告)日：2002-02-12
申请号：US09499898
申请日：2000-02-08
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H02L2976
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的氧化硅膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。栅极部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

26. 发明授权

US6118140A Semiconductor apparatus having conductive thin films 失效
标题翻译：具有导电薄膜的半导体装置
公开(公告)号：US6118140A
公开(公告)日：2000-09-12
申请号：US749324
申请日：1996-11-14
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , H01L29/04 , H01L31/036
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode on a silicon oxide film on a semiconductor substrate through a silicon oxide film, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers. The portion of the gate electrode is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and of crystallizing (recrystallizing) this amorphous material. Depositing of the amorphous layers is carried out a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and crystallizing the amorphous material are repeated, whereby a laminated structure of polycrystalline layers having a necessary film thickness is obtained. It is possible to prevent deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：在通过氧化硅膜在半导体衬底上形成氧化硅膜上的电极时，例如，栅电极2被构造成多个多晶硅层的叠层结构。栅电极的部分通过制造具有沉积非晶层并使（非晶态）结晶（再结晶））的方法的薄膜的制造方法形成。非晶层的沉积进行多次，使得一次沉积的非晶层的厚度不大于根据失败事件确定的临界应力值规定的厚度，非晶材料在沉积每个非晶层的每个工艺完成后结晶，并且重复沉积非晶层并使无定形材料结晶的过程，从而获得具有所需膜厚度的多晶层的层叠结构。可以防止半导体器件的电特性的劣化和层之间的剥离等缺陷的发生，层中的裂纹等的发生，并且可以获得小晶粒尺寸的多晶层通过层压多晶材料制成所需的膜厚度。

27. 发明授权

US6043142A Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor 失效
公开(公告)号：US6043142A
公开(公告)日：2000-03-28
申请号：US985179
申请日：1997-12-04
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.

28. 发明授权

US5683515A Apparatus for manufacturing a semiconductor device having conductive then films 失效
标题翻译：用于制造具有导电膜的半导体器件的装置
公开(公告)号：US5683515A
公开(公告)日：1997-11-04
申请号：US534118
申请日：1995-09-26
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L21/02 , H01L23/532 , H01L29/49 , C23C16/00
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的氧化硅膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。栅极部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

29. 发明授权

US5407186A Sheet finish-processing unit in image forming apparatus 失效
标题翻译：图像形成装置中的片材整理处理单元
公开(公告)号：US5407186A
公开(公告)日：1995-04-18
申请号：US053952
申请日：1993-04-28
申请人： Satoru Hayama , Keiichi Taguchi , Noriaki Okamoto , Keiji Okumura , Jun Miyoshi
发明人： Satoru Hayama , Keiichi Taguchi , Noriaki Okamoto , Keiji Okumura , Jun Miyoshi
IPC分类号： B42C1/12 , B31B1/68 , B65H39/02
CPC分类号： B42C1/125 , B65H2403/511 , B65H2408/113 , B65H2408/1142
摘要： Image forming apparatus including a sheet finish-processing unit for finish-processing sheets discharged from a copying machine to which the unit is laterally positioned and stored thereby into a plurality of stacks. A sheet stack finish-processing mechanism of the unit, incorporating a stapler, is shiftable by an associated drive mechanism in the widthwise direction along the adjacent end of a positioned stack in storage. A sheet stack handling mechanism therein draws the end of the positioned stack into a finishing locale of the finish-processing mechanism, and subsequent to a finishing (stapling) operation, returns the finished sheet stack into storage. Thereupon, the stack is transversely discharged frontward of the image forming apparatus from storage, during which operation a subsequent finishing operation is concurrently executable; by such discharge a number of copy stacks greater than the number of stacking storages can be processed. The stacks are linearly inserted into and withdrawn from the finish-processing mechanism, eliminating the need for complex movements thereof, and allowing the finish-processing mechanism to be functional at a number of linear positions along the stack end margin. Furthermore, the sheet stacks are discharged to the apparatus front, wherein they are readily accessible for removal by an operator.
摘要翻译：图像形成设备包括一个用于对从单元横向定位并由其存储的复印机排出的纸张进行精加工的多个堆叠的纸张处理单元。包括订书机的单元的纸叠完成处理机构可以通过相关联的驱动机构沿着沿着定位的堆叠的存储中的相邻端沿宽度方向移动。纸张堆栈处理机构在其中将定位的堆叠的端部拉到精加工机构的精加工区域中，并且在精加工（装订）操作之后，将成品纸堆叠返回到存储器中。于是，堆叠从存储器横向地从图像形成装置向前排出，在该操作期间，随后的整理操作可同时执行; 通过这种放电，可以处理大于堆叠存储器数量的多个复制堆叠。堆叠线材插入并从精加工机构中取出，消除了对其复杂运动的需要，并且允许精加工机构在沿着堆叠端边缘的多个线性位置处起作用。此外，片材堆叠被排放到设备前部，其中它们容易接近以便操作者去除。

30. 发明授权

US5353182A Magnetic disk unit having magnetic disks and a magnetic head with a head slider which is in contact with surfaces of the magnetic disk 失效
标题翻译：具有磁盘的磁盘单元和具有与磁盘表面接触的磁头滑块的磁头
公开(公告)号：US5353182A
公开(公告)日：1994-10-04
申请号：US985176
申请日：1992-12-02
申请人： Takao Nakamura , Nobuya Sekiyama , Masaki Ohura , Yoshiki Kato , Noriaki Okamoto , Masami Masuda
发明人： Takao Nakamura , Nobuya Sekiyama , Masaki Ohura , Yoshiki Kato , Noriaki Okamoto , Masami Masuda
IPC分类号： G11B5/82 , G11B5/84 , G11B5/48 , B05D5/12 , G11B5/012
CPC分类号： G11B5/8404 , G11B5/82 , Y10S428/90
摘要： A magnetic disk includes a non-magnetic substrate with a surface processed layer having fine irregularities formed at least on a main surface thereof, and at least a thin film magnetic film and a protective film formed in that order on the non-magnetic substrate in such a manner that the fine irregularities are duplicated thereof. The surface of the surface processed layer of the non-magnetic substrate has protrusions whose surfaces are made flat and a configuration which exhibits a three-dimensional bearing curve in which the bearing ratio at a section taken at a depth from the top of the surface which corresponds to the portion of the top portion deformed by the head load during the contact start-stops drive is between 0.1% and 10%. The protrusions formed on the surface processed layer have a height ranging from several nm to several tens of nm. The bearing ratio is a value obtained at a depth of 5 to 10 nm from the top of the protrusions.
摘要翻译：磁盘包括具有至少在其主表面上形成有细微凹凸的表面处理层的非磁性基板，以及至少在非磁性基板上依次形成的薄膜磁性膜和保护膜这种细微的不规则性被复制的方式。非磁性基板的表面处理层的表面具有突起，其表面是平坦的，并且具有三维轴承曲线的构造，其中在从表面的顶部开始的深度处截取的截面的轴承比对应于在接触开始 - 停止期间头部负载变形的顶部的部分在0.1％和10％之间。形成在表面处理层上的突起具有几nm至几十nm的高度。轴承比是从突起的顶部开始的深度为5〜10nm的值。

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