专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US06609824B1 Radiation thermometer 有权
标题翻译：辐射温度计
公开(公告)号：US06609824B1
公开(公告)日：2003-08-26
申请号：US09597690
申请日：2000-06-19
申请人： Tetsuya Sato , Hiroyuki Ota
发明人： Tetsuya Sato , Hiroyuki Ota
IPC分类号： G01J500
CPC分类号： G01J5/02 , G01J5/026 , G01J5/16 , G01J2005/068
摘要： A radiation thermometer capable of precise measurement without depending upon an absolute precision of an infrared ray sensor for detecting infrared ray or a temperature sensor for measuring a temperature of the infrared ray sensor is provided wherein, controlling means retains a reference temperature for the measurement object, a sensor reference temperature for the sensor, and a sensor reference output for the sensor output when infrared ray radiated from the object of measurement having the object of measurement reference temperature is detected by the infrared ray sensor having the sensor reference temperature, and calculates the temperature of measurement object based on a first difference as a difference between a sensor temperature to be measured by the sensor temperature measuring portion and a sensor reference temperature, a second difference as a difference between a sensor output to be detected by the infrared ray sensor and a sensor reference output and the object of measurement reference temperature.
摘要翻译：提供一种能够精确测量的辐射温度计，其不依赖于用于检测红外线的红外线传感器的绝对精度或用于测量红外线传感器的温度的温度传感器，其中控制装置保持测量对象的参考温度，传感器的传感器参考温度，以及当具有测量基准温度对象的测量对象辐射红外线时，传感器输出的传感器基准输出由具有传感器参考温度的红外线传感器检测，并计算温度基于作为由传感器温度测量部测量的传感器温度与传感器参考温度之间的差的第一差异的测量对象的第二差值作为由红外线传感器检测的传感器输出与传感器参考输出和测量对象参考温度。

22. 发明授权

US06335218B1 Method for fabricating a group III nitride semiconductor device 有权
标题翻译：制造III族氮化物半导体器件的方法
公开(公告)号：US06335218B1
公开(公告)日：2002-01-01
申请号：US09565025
申请日：2000-05-05
申请人： Hiroyuki Ota , Mamoru Miyachi , Yoshinori Kimura
发明人： Hiroyuki Ota , Mamoru Miyachi , Yoshinori Kimura
IPC分类号： H01L2100
CPC分类号： H01L33/325 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/32 , H01S5/32341
摘要： A group III nitride semiconductor device producing method is constructed by: a step of forming a first crystal layer made of a group III nitride semiconductor (AlxGa1−x)1−y.InyN (0≦×≦1, 0≦y≦1) doped with a group II impurity element; a step of a second crystal layer made of a group III nitride semiconductor AlzGa1−zN (0.7≦z≦1) onto the first crystal layer; and a step of removing at least a part of the second crystal layer by etching after the formation of the first and second crystal layers.
摘要翻译： III族氮化物半导体器件的制造方法是通过以下步骤构成的：形成由III族氮化物半导体（Al x Ga 1-x）1-y.InyN（0≤x≤1,0

23. 发明授权

US06329667B1 Nitride semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US06329667B1
公开(公告)日：2001-12-11
申请号：US09497695
申请日：2000-02-08
申请人： Hiroyuki Ota , Mitsuru Nishitsuka , Hirokazu Takahashi
发明人： Hiroyuki Ota , Mitsuru Nishitsuka , Hirokazu Takahashi
IPC分类号： H01L2906
CPC分类号： H01L33/02 , H01L33/06 , H01L33/32 , H01S5/0207 , H01S5/10 , H01S5/2081 , H01S5/32341
摘要： A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.
摘要翻译：即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性的氮化物半导体发光器件。氮化物半导体发光器件包括通过沉积III族氮化物半导体获得的有源层和与有源层相邻设置并且具有比有源层更大的带隙的势垒层，所述有源层具有包围所述有源层的势垒部分穿透位错并且由包围穿透位错的界面限定，并且由与阻挡层相同的材料制成。

24. 发明授权

US06259122B1 Group III nitride semiconductor light-emitting device having anticracking feature 有权
标题翻译： III族氮化物半导体发光器件具有抗撬性能
公开(公告)号：US06259122B1
公开(公告)日：2001-07-10
申请号：US09368535
申请日：1999-08-04
申请人： Hiroyuki Ota , Toshiyuki Tanaka , Atsushi Watanabe
发明人： Hiroyuki Ota , Toshiyuki Tanaka , Atsushi Watanabe
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01S5/32341
摘要： In a semiconductor light-emitting device having a multilayered structure which consists essentially of layers of Group III nitride semiconductors (AlxGa1−x) 1−yInyN (0≦x≦1, 0≦y≦1) which are different from each other in chemical composition ratio, generation of cracks at an interface propagating from an interface between adjacent layers is prevented. Two adjacent layers within the multilayered structure, which include a lower layer having a lattice constant larger than a lattice constant of an upper layer of the two adjacent layers, have a portion close to the interface of the two adjacent layers doped such that an element different from the Group III nitride semiconductors is added in a higher concentration, i.e. in a higher distribution density than in other portions thereof.
摘要翻译：在具有多层结构的半导体发光器件中，其基本上由III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1）彼此之间的化学组成比，防止了从相邻层之间的界面传播的界面产生裂纹。多层结构中的两个相邻层，其包括具有大于两个相邻层的上层的晶格常数的晶格常数的下层，具有靠近所述两个相邻层的界面的部分，所述界面被掺杂，使得元件不同从III族氮化物半导体中加入更高的浓度，即比其它部分更高的分布密度。

25. 发明授权

US5659491A Method and system for inspecting an assembly, and electrical inspection apparatus for a flash unit 失效
标题翻译：用于检查组件的方法和系统，以及用于闪光单元的电气检查装置
公开(公告)号：US5659491A
公开(公告)日：1997-08-19
申请号：US355975
申请日：1994-12-14
申请人： Fusao Ichikawa , Ryo Mori , Hiroyuki Ota
发明人： Fusao Ichikawa , Ryo Mori , Hiroyuki Ota
IPC分类号： B07C5/344 , G03B15/05 , G03B19/04 , G03B43/00 , H05B41/32 , G05B19/418
CPC分类号： H05B41/325 , B07C5/344 , G03B15/05 , G03B19/04 , G03B43/00 , G03B2215/0503 , G03B2219/045
摘要： An inspection system for assemblies, especially for flash units of used film packages as to if the flash units are reusable. The inspection system circulates pallets each holding a flash unit in a predetermined posture around a plurality of inspection stations for various inspection items. Inspection data detected in each inspection station is written in a memory of the pallet through a data communication system disposed in each pallet and each inspection station. A computer reads the memory for classifying the flash unit on the basis of the inspection data on all inspection items and writes classification data in the memory. A plurality of electrical inspection apparatuses are disposed in the inspection system for simultaneously inspecting electrical properties of a plurality of flash units. Each inspection apparatus has proving pins, an actuator and a photo-sensor which are moved into their operative positions when the pallet holding the flash unit is stopped at the inspection apparatus, wherein the inspection apparatus charges a main capacitor with a high D.C. voltage while measuring the voltage of the main capacitor.
摘要翻译：用于组件的检查系统，特别是用于使用胶片包装的闪光单元，如果闪光灯组件是可重复使用的。检查系统将托盘中的每个保持闪光单元的托板循环在用于各种检查项目的多个检查站周围。在每个检查站中检测到的检查数据通过设置在每个托盘和每个检查站中的数据通信系统写入托盘的存储器中。计算机根据所有检查项目的检查数据读取闪存单元的分类存储器，并将分类数据写入存储器。多个电气检查装置设置在检查系统中，用于同时检查多个闪光单元的电气特性。每个检查装置具有检测销，致动器和光传感器，当保持闪光单元的托盘停在检查装置时，其移动到其操作位置，其中检查装置对具有高DC电压的主电容器充电，同时测量主电容的电压。

26. 发明授权

US5496589A Curing composition and method for impregnating wood 失效
标题翻译：固化组合物和浸渍木材的方法
公开(公告)号：US5496589A
公开(公告)日：1996-03-05
申请号：US215722
申请日：1994-03-22
申请人： Ichiro Igarashi , Hiroyuki Ota , Yoshio Mizoguchi
发明人： Ichiro Igarashi , Hiroyuki Ota , Yoshio Mizoguchi
IPC分类号： B27K3/36 , B27K5/06 , C08F20/28 , C08G65/332 , C09D4/06 , C09D133/14 , B05D3/00
CPC分类号： B27K3/15 , C08F20/28 , C08G65/3324 , C09D133/14 , C09D4/06
摘要： A curing composition and a method for impregnating wood using the curing composition, which comprises a reaction product represented by formula (1) obtained by reacting an alkylene oxide adduct of a hydrocarbon polyol and (meth)acrylic acid: ##STR1## wherein R.sup.10 represents a residual group of a hydrocarbon polyol having from 3 to 15 carbon atoms and (c1+d1) hydroxyl groups; R.sup.11 represents an alkylene group having from 2 to 4 carbon atoms; R.sup.12 represents an alkylene group having from 2 to 4 carbon atoms; R.sup.13 represents a hydrogen atom or a methyl group; a1 represents a number of from 0 to 10; b1 represents a number of from 0 to 10; c1 represents a number of not less than 1.5; and d1 represents a number of not less than 0.5; provided that (a1+b1) is not less than 1.
摘要翻译：固化组合物和使用该固化组合物浸渍木材的方法，其包括通过使烃多元醇的烯化氧加合物与（甲基）丙烯酸反应获得的式（1）表示的反应产物：其中 R 10表示碳原子数3〜15的烃多元醇和（c1 + d1）羟基的残基， R11表示碳原子数2〜4的亚烷基。 R 12表示碳原子数2〜4的亚烷基。 R 13表示氢原子或甲基; a1表示0〜10的数; b1表示0〜10的数; c1表示不小于1.5的数; d1表示不小于0.5的数; （a1 + b1）不小于1。

27. 发明授权

US5382334A Process for forming polarization inversion layer 失效
标题翻译：用于形成极化反转层的工艺
公开(公告)号：US5382334A
公开(公告)日：1995-01-17
申请号：US138214
申请日：1993-10-20
申请人： Satoshi Miyaguchi , Atsushi Onoe , Hiroyuki Ota
发明人： Satoshi Miyaguchi , Atsushi Onoe , Hiroyuki Ota
IPC分类号： G02F1/37 , G02F1/355 , H01L21/00
CPC分类号： G02F1/3558 , Y10T29/42
摘要： Disclosed is a process for forming a polarization inversion layer which can form a periodic metal pattern on one major surface of a substrate and can easily form a fine periodic domain inversion structure. According to this process for forming polarization inversion layer, before or after the step of forming a three-dimensional waveguide, plural pairs of ground anodes and voltage-applying cathodes are formed at predetermined intervals, each pair sandwiching the three-dimensional waveguide along the extending direction thereof, facing each other, and set apart from each other, on one major surface of the substrate parallel to an axial direction where polarization inversion easily occurs, an electron beam is irradiated to the cathodes with the anodes grounded to thereby form a plurality of polarization inversion layers along the extending direction of the three-dimensional waveguide.
摘要翻译：公开了一种用于形成极化反转层的方法，其可以在衬底的一个主表面上形成周期性金属图案，并且可以容易地形成精细的周期性畴反转结构。根据用于形成极化反转层的方法，在形成三维波导的步骤之前或之后，以预定的间隔形成多对接地阳极和施加电压的阴极，每对将沿着延伸的三维波导夹着三维波导方向彼此面对，并且彼此分离，在平行于极化反转容易发生的轴向的基板的一个主表面上，电子束照射到阴极，阳极接地，从而形成多个沿着三维波导的延伸方向的极化反转层。

28. 发明授权

US5337399A Wavelength conversion element 失效
标题翻译：波长转换元件
公开(公告)号：US5337399A
公开(公告)日：1994-08-09
申请号：US800122
申请日：1991-11-29
申请人： Hiroyuki Ota , Kiyofumi Chikuma
发明人： Hiroyuki Ota , Kiyofumi Chikuma
IPC分类号： G02B6/12 , G02B6/42 , G02F1/35 , G02F1/355 , G02F1/37 , H01S3/109 , H01S5/00 , H01S5/042 , H01S5/20 , H01S5/227 , G02B6/02 , H03F7/00
CPC分类号： H01S5/0604 , G02B6/12004 , G02B6/42 , G02F1/377 , G02B2006/12064 , G02B2006/12078 , G02B2006/12121 , G02B2006/12147 , H01S5/028 , H01S5/1032 , H01S5/2004 , H01S5/2275
摘要： A wavelength conversion element comprises a laser oscillation portion provided with an active layer waveguide formed of a material of III-V group in a periodic table and an output waveguide path portion provided with an output waveguide. The output waveguide path portion is further provided with a buffer layer between the output waveguide and the active layer waveguide having a thickness suitable for propagation of an evanecsent wave from the active layer waveguide to the output waveguide. In result, a wavelength conversion efficiency of a second harmonic can be remarkably improved, and a process of manufacturing the wavelength conversion element becomes more easy.
摘要翻译：波长转换元件包括设置有由周期表中的III-V族材料形成的有源层波导的激光振荡部分和设置有输出波导的输出波导路径部分。输出波导路径部分还在输出波导和有源层波导之间设置缓冲层，该缓冲层具有适于将传播波从有源层波导传播到输出波导的厚度。结果，可以显着提高二次谐波的波长转换效率，并且使波长转换元件的制造过程变得更加容易。

29. 发明授权

US5274251A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US5274251A
公开(公告)日：1993-12-28
申请号：US725684
申请日：1991-07-03
申请人： Hiroyuki Ota , Atsushi Watanabe
发明人： Hiroyuki Ota , Atsushi Watanabe
IPC分类号： H01S5/00 , H01S5/02 , H01S5/323 , H01L49/00 , H01L29/161 , H01L29/205 , H01L33/00
CPC分类号： H01S5/32341 , H01S5/0218
摘要： A semiconductor light emitting element with a high light-emitting efficiency, which is constituted in such a way that, of the composition of its GaN and AlN epitaxial layer, part of N is substituted by P, thus ensuring good lattice-matching with the substrate crystal, ZnO.

30. 发明授权

US5207071A Current control apparatus for air-conditioning system 失效
标题翻译：空调系统的电流控制装置
公开(公告)号：US5207071A
公开(公告)日：1993-05-04
申请号：US872972
申请日：1992-04-24
申请人： Masao Ozu , Harunobu Nukushina , Michika Uesugi , Atsuyuki Hiruma , Kazuo Mochizuki , Toru Kubo , Masao Isshiki , Oserojouin Watabiki , Hiroyuki Ota , Kazuhito Ono
发明人： Masao Ozu , Harunobu Nukushina , Michika Uesugi , Atsuyuki Hiruma , Kazuo Mochizuki , Toru Kubo , Masao Isshiki , Oserojouin Watabiki , Hiroyuki Ota , Kazuhito Ono
IPC分类号： F24F11/02 , F24F11/00 , H02J3/14 , H02J13/00 , H04B3/54
CPC分类号： H02J3/14 , F24F11/0009 , H02J13/0075 , H02J13/0079 , F24F11/0012 , F24F11/0034 , F24F2011/0046 , F24F2011/0047 , Y02B90/2653 , Y04S40/126 , Y10T307/414
摘要： There is disclosed a current control apparatus comprising first controllers adapted for detecting an overall or total load current to calculate distribution values for distributing a current margin with respect to an overall or total current limit value to respective air-conditioners; and second controllers adapted for respectively controlling air-conditioners so as not to exceed individual current limit values, and for carrying out an incremental correction of individual current limit values in accordance with distribution values calculated by the first controllers.
摘要翻译：公开了一种电流控制装置，包括适于检测整体或总负载电流的第一控制器，以计算相对于各个空调器的总电流限值或总电流极限值分配电流裕度的分布值; 以及第二控制器，其适于分别控制空调，以便不超过单独的电流限制值，并且用于根据由第一控制器计算的分布值执行各个电流限制值的增量校正。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式